DMN6013LFGQ-7 - DIODES INC

DMN6013LFGQ

Document number: DS38870 Rev. 2 - 2

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June 2018

DMN6013LFGQ

60V N-CHANNEL ENHANCEMENT MODE MOSFET

PowerDI3333-8

Product Summary

BVDSS

RDS(ON) max

ID max

TA = +25°C

60V

13m @ VGS = 10V

10.3A

18m @ VGS = 4.5V

8.8A

Description and Applications

This MOSFET is designed to meet the stringent requirements of

Automotive applications. It is qualified to AEC-Q101, supported by a

PPAP and is ideal for use in:

 Motor Control

 DC to DC Converters

 Reverse Polarity Protection

Features and Benefits

 Low RDS(ON) – Ensures on state losses are minimized

 Small form factor thermally efficient package enables higher

density end products

 Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: PowerDI®3333-8

 Case Material: Molded Plastic, "Green" Molding Compound,

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See Diagram

 Terminals: Finish  Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.072 grams (Approximate)

Ordering Information (Note 5)

Part Number

Case

Packaging

DMN6013LFGQ-7

PowerDI3333-8

2,000/Tape & Reel

DMN6013LFGQ-13

PowerDI3333-8

3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.

5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

Top View

Bottom View

PowerDI3333-8

N63 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Two Digits of Year (ex: 18 = 2018)

WW = Week Code (01 to 53)

SSSG

DDDD

Pin 1

D

S

G

Equivalent Circuit

N63

YYWW

PowerDI is a registered trademark of Diodes Incorporated.

DMN6013LFGQ

Document number: DS38870 Rev. 2 - 2

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June 2018

DMN6013LFGQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 7) VGS = 10V

TA = +25°C

TA = +70°C

ID

10.3

8.3

A

TC = +25°C

TC = +100°C

ID

45

28

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

58.3

A

Maximum Continuous Body Diode Forward Current (Note 7)

IS

3

A

Avalanche Current, L = 0.1mH

IAS

33.3

A

Avalanche Energy, L = 0.1mH

EAS

56.8

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

PD

1

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

123

°C/W

t < 10s

69

Total Power Dissipation (Note 7)

PD

2.1

W

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

RJA

60

°C/W

t < 10s

34

Total Power Dissipation (Note 7)

PD

40

W

Thermal Resistance, Junction to Case (Note 7)

RJC

3.2

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

60

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current, TJ = +25°C

IDSS

—

1

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1

1.8

3

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

9.3

13

mΩ

VGS = 10V, ID = 10A

—

12.3

18

VGS = 4.5V, ID = 8A

Diode Forward Voltage

VSD

—

0.7

1.2

V

VGS = 0V, IS = 1.7A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

2577

—

pF

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

162

—

pF

Reverse Transfer Capacitance

Crss

—

132

—

pF

Gate Resistance

Rg

—

0.9

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

26.6

—

nC

VDS = 30V, ID = 10A

Total Gate Charge (VGS = 10V)

Qg

—

55.4

—

nC

Gate-Source Charge

Qgs

—

9.3

—

nC

Gate-Drain Charge

Qgd

—

12.6

—

nC

Turn-On Delay Time

tD(ON)

—

6.2

—

ns

VGS = 10V, VDS = 30V,

RG = 3Ω, ID = 10A

Turn-On Rise Time

tR

—

9.9

—

ns

Turn-Off Delay Time

tD(OFF)

—

27.6

—

ns

Turn-Off Fall Time

tF

—

11.7

—

ns

Body Diode Reverse Recovery Time

tRR

—

9.4

—

ns

IF = 10A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—

18.6

—

nC

Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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Document number: DS38870 Rev. 2 - 2

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DMN6013LFGQ

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

DS

I , DRAIN CURRENT (A)

D

0

3

6

9

12

15

18

21

24

27

30

0 0.5 1 1.5 2 2.5 3

V = 3.0V

GS

V = 3.5V

GS

V = 4.0V

GS

V = 4.5V

GS

V = 10V

GS

I , DRAIN-SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0.006

0.008

0.01

0.012

0.014

0 5 10 15 20 25 30

V = 4.5V

GS

V = 10V

GS

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0.005

0.01

0.015

0.02

0.025

0.03

0 2 4 6 8 10 12 14 16 18 20

I = 10A

D

I = 8mA

D

T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

J

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

-50 -25 0 25 50 75 100 125 150

V = V

I = 10A

GS

D

10

V = 4.5V

I = 8A

GS

D

I , DRAIN CURRENT (A)

D

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

D

S

(

O

N

)



0

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

0.018

0.02

0.022

0.024

0

2

4

6

8

10

12

14

16

18

20

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 10V

GS

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

0

5

10

15

20

25

30

1

1.5

2

2.5

3

3.5

4

4.5

5

V = 5.0V

DS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

ID, DRAIN CURRENT (A)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

DMN6013LFGQ

Document number: DS38870 Rev. 2 - 2

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DMN6013LFGQ

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0

0.004

0.008

0.012

0.016

0.02

0.024

0.028

-50 -25 0 25 50 75 100 125 150

V = 4.5V

I = 8A

GS

D

V = V

I = 10A

GS

D

10

100

1000

10000

0 5 10 15 20 25 30 35 40 45 50 55 60

CT, JUNCTION CAPACITANCE (pF)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

f = 1MHz

Ciss

Coss

Crss

Q (nC)

g, TOTAL GATE CHARGE

Figure 11 Gate Charge

V GATE THRESHOLD VOLTAGE (V)

GS

0

2

4

6

8

10

0 6 12 18 24 30 36 42 48 54 60

V = 30V

I = A

DS

D

10

V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

R

Limited

DS(ON)

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

0.001

0.01

0.1

1

10

100

0.01

0.1

1

10

100

T = 150°C

T = 25°C

V = 10V

Single Pulse

J(max)

A

GS

DUT on 1 * MRP Board

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

I

,

S

O

U

R

C

E

C

U

R

E

N

T

(

A

)

S

0

5

10

15

20

25

30

0

0.2

0.4

0.6

0.8

1

1.2

1.4

T = 125°C

A

T = 85°C

A

T = 150°C

A

T = -55°C

A

T = 25°C

A

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Junction Temperature

J



V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(

t

h

)

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-50

-25

0

25

50

75

100

125

150

I = 1mA

D

I = 250µA

D

VGS(TH), GATE THRESHOLD VOLTAGE (V)

IS, SOURCE CURRENT (A)

ID, DRAIN CURRENT (A)

VGS, GATE-SOURCE VOLTAGE (V)

DMN6013LFGQ

Document number: DS38870 Rev. 2 - 2

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DMN6013LFGQ

t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

r(t), TRANSIENT THERMAL RESISTANCE

R (t) = r(t) * R

R = 126

癈

/W

Duty Cycle, D = t1/ t2





JA JA

JA

D = 0.5

D = 0.7

D = 0.9

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

RθJA (t) = r(t) * RθJA

RθJA = 126℃/W

Duty Cycle, D = t1/t2

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DMN6013LFGQ

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

PowerDI3333-8

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

PowerDI3333-8

D

D2

E

e

b

E2

A

A3

Pin #1 ID

Seating Plane

L(4x)

A1

L1(3x)

b2(4x)

z(4x)

1

8

E3

E4

X3

Y3

X

Y

C

Y1

Y2

X1

X2

1

8Y4

PowerDI3333-8

Dim

Min

Max

Typ

A

0.75

0.85

0.80

A1

0.00

0.05

0.02

A3



0.203

b

0.27

0.37

0.32

b2

0.15

0.25

0.20

D

3.25

3.35

3.30

D2

2.22

2.32

2.27

E

3.25

3.35

3.30

E2

1.56

1.66

1.61

E3

0.79

0.89

0.84

E4

1.60

1.70

1.65

e



0.65

L

0.35

0.45

0.40

L1



0.39

z



0.515

All Dimensions in mm

Dimensions

Value (in mm)

C

0.650

X

0.420

X1

0.420

X2

0.230

X3

2.370

Y

0.700

Y1

1.850

Y2

2.250

Y3

3.700

Y4

0.540

DMN6013LFGQ

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com