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AT25010B/020B/040B [DATASHEET]
Atmel-8707F-SEEPROM-AT25010B-020B-040B-Datasheet_012015
Write Status Register (WRSR): The WRSR instruction allows the user to select one of four levels of protection.
The AT25010B/020B/040B is divided into four array segments. None, one-quarter (¼), one-half (½), or all of the
memory segments can be protected. Any of the data within any selected segment will therefore be read-only.
The block write protection levels and corresponding status register control bits are shown in Table 6-4.
Bits BP1 and BP0 are nonvolatile cells that have the same properties and functions as the regular memory cells
(e.g., WREN, tWC, RDSR).
Table 6-4. Block Write Protect Bits
Read Sequence (READ): Reading the AT25010B/020B/040B via the SO pin requires the following sequence.
After the CS line is pulled low to select a device, the Read opcode (including A8 for the AT25040B) is
transmitted via the SI line followed by the byte address to be read (A7 A0). Upon completion, any data on the
SI line will be ignored. The data (D7 D0) at the specified address is then shifted out onto the SO line. If only
one byte is to be read, the CS line should be driven high after the data comes out. The Read Sequence can be
continued since the byte address is automatically incremented and data will continue to be shifted out. When
the highest address is reached, the address counter will roll-over to the lowest address allowing the entire
memory to be read in one continuous read cycle.
Write Sequence (WRITE): In order to program the AT25010B/020B/040B, the Write Protect pin (WP) must be
held high and two separate instructions must be executed. First, the device must be write enabled via the
WREN instruction. Then a Write (WRITE) instruction may be executed. Also, the address of the memory
location(s) to be programmed must be outside the protected address field location selected by the Block Write
Protection level. During an internal write cycle, all commands will be ignored except the RDSR instruction.
A Write instruction requires the following sequence. After the CS line is pulled low to select the device, the Write
opcode (including A8 for the AT25040B) is transmitted via the SI line followed by the byte address (A7 A0) and
the data (D7 D0) to be programmed. Programming will start after the CS pin is brought high. The low-to-high
transition of the CS pin must occur during the SCK low time immediately after clocking in the D0 (LSB) data bit.
The Ready/Busy status of the device can be determined by initiating a Read Status Register (RDSR)
instruction. If Bit 0 = 1, the write cycle is still in progress. If Bit 0 = 0, the write cycle has ended. Only the RDSR
instruction is enabled during the write programming cycle.
The AT25010B/020B/040B is capable of an 8-byte Page Write operation. After each byte of data is received, the
three low-order address bits are internally incremented by one; the six high-order bits of the address will remain
constant. If more than eight bytes of data are transmitted, the address counter will roll-over and the previously
written data will be overwritten. The AT25010B/020B/040B is automatically returned to the Write Disable state
at the completion of a write cycle.
Note: If the WP pin is brought low or if the device is not Write Enabled (WREN), the device will ignore the Write
instruction and will return to the standby state, when CS is brought high. A new CS falling edge is
required to reinitiate the serial communication.
Level
Status Register Bits Array Addresses Protected
BP1 BP0 AT25010B AT25020B AT25040B
0 0 0 None None None
1 (¼) 0 1 607F C0 FF 180 FF
2 (½) 1 0 40 7F 80 FF 100 1FF
3 (All) 1 1 00 7F 00 FF 000 1FF