COMSET SEMICONDUCT ORS 2/3
2N6053 PNP
2N6055 NPN
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
VCEO(SUS) Collector-Emitter Sustaining
Voltage (1) IC=100 mA 2N6053
2N6055 60 - - V
ICEO Collector-Emitter Curre nt VCE=30 V 2N6053
2N6055 --0.5mA
VCE=60 V, VBE=-1.5 V 2N6053
2N6055 - - 500 µA
ICEX Collector-Cutoff Current
VCE=60 V, VBE=-1.5 V
TC=150°C 2N6053
2N6055 --5mA
IEBO Emitter Cutoff Current VEB=5.0 V 2N6053
2N6055 --2.0mA
IC=4.0 A, VCE=3.0 V 750 - 18K
hFE DC Current Gain (*)
IC=8.0 A, VCE=3.0 V
2N6053
2N6055 100 - - -
IC=4.0 A, IB=16 mA --2.0
VCE(SAT)
Collector-Emitter saturation
Voltage (*) IC=8.0 A, IB=80 mA
2N6053
2N6055 --3.0
V
--
VBE(SAT) Base -Emitter Voltage (*) IC=8.0 A, IB=80 mA 2N6053
2N6055 --
4.0 V
VBE(on) Base-Emitter Vol tage IC=4.0 A, VCE=3.0 V 2N6053
2N6055 --2.8V
--
fTTransition Frequency VCE=3.0 Vdc, IC=3.0 Adc, f=1 MHz 2N6053
2N6055 4--
MHz
2N6053 - - 300
Ccbo Collector-base
Capacitance VCB=10 V, IE=0, f=1 MH z
2N6055 - - 200
pF
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
For PNP types, values are negative