ZXMP7A17G
Document Number DS33594 Rev. 5 - 2
1 of 6
www.diodes.com
March 2015
© Diodes Incorporated
ADVANCE INFO R MA T I O N
ZXMP7A17G
70V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= +25°C
-70V 160mΩ @ V
GS
= -10V -2.6A
250mΩ @ V
GS
= -4.5V -1.6A
Description
This MOSFET is designed to minimize the on-state resistance
and yet
maint
ain superior switching performance, making it ideal for high
efficiency power management applications.
Applications
• Motor Control
• Transformer Driving Switch
• DC-DC Converters
• Power Management Functions
• Uninterrupted Power Supply
Features and Benefits
• 100% Unclamped Inductive Switch (UIS) Test in Production
• Low On-Resistance
• Fast Switching Speed
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram Below
• Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (Approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
ZXMP7A17GTA Commercial SOT223 1,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Pin Out - Top View
Top View
SOT223
ZXMP
7A17
YWW
ZXMP7A17 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
e3
Green
Equivalent Circuit
SOT223
ZXMP7A17G
Document Number DS33594 Rev. 5 - 2
2 of 6
www.diodes.com
March 2015
© Diodes Incorporated
ADVANCE INFO R MA T I O N
ZXMP7A17G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage V
DSS
-70 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current V
GS
= -10V
(Note 6)
I
D
-3.7
A
T
A
= +70°C (Note 6) -2.9
(Note 5) -2.6
Pulsed Drain Current V
GS
= -10V (Note 7) I
DM
-9.6 A
Continuous Source Current (Body Diode) (Note 6) I
S
-4.8 A
Pulsed Source Current (Body Diode) (Note 7) I
SM
-9.6 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Note 5)
P
D
2.0
16.0 W
mW/°C
(Note 6) 3.9
31
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
62.5 °C/W
(Note 6) 34
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
-70 V I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
-1 µA V
DS
= -70V, V
GS
= 0V
Gate-Source Leakage I
GSS
±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(th)
-1.0 V I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8) R
DS(ON)
0.16 Ω V
GS
= -10V, I
D
= -2.1A
0.25 V
GS
= -4.5V, I
D
= -1.7A
Forward Transconductance (Notes 8 & 9) g
fs
4.4 S V
DS
= -15V, I
D
= -2.1A
Diode Forward Voltage (Note 8) V
SD
-0.85 -0.95 V I
S
= -2.0A, V
GS
= 0V
Reverse recovery time (Note 9) t
rr
29.8 ns I
S
= -2.1A, di/dt= 100A/µs
Reverse recovery charge (Note 9) Q
rr
38.5 nC
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance C
iss
635 pF V
DS
= -40V, V
GS
= 0V
f= 1MHz
Output Capacitance C
oss
52 pF
Reverse Transfer Capacitance C
rss
42.5 pF
Total Gate Charge (Note 10) Q
g
9.6 nC V
GS
= -5V
V
DS
= -35V
I
D
= -2.1A
Total Gate Charge (Note 10) Q
g
18 nC
V
GS
= -10V
Gate-Source Charge (Note 10) Q
gs
1.77 nC
Gate-Drain Charge (Note 10) Q
gd
3.66 nC
Turn-On Delay Time (Note 10) t
D(on)
2.5 ns
V
DD
= -35V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 10) t
r
3.4 ns
Turn-Off Delay Time (Note 10) t
D(off)
27.9 ns
Turn-Off Fall Time (Note 10) t
f
8 ns
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as Note 5, except the device is measured at t ≤ 5 seconds.
7. Same as Note 5, except the device is pulsed with D= 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.
8. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
ZXMP7A17G
Document Number DS33594 Rev. 5 - 2
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ZXMP7A17G
ZXMP7A17G
Document Number DS33594 Rev. 5 - 2
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ZXMP7A17G
Document Number DS33594 Rev. 5 - 2
5 of 6
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© Diodes Incorporated
ADVANCE INFO R MA T I O N
ZXMP7A17G
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT223
Dim
Min
Max
Typ
A
1.55 1.65 1.60
A1
0.010
0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
- - 4.60
e1
- - 2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
A1A
7
°
7°
D
b
e
e1
b1 C
E1
L
0
°-1
0
°
Q
E
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
ZXMP7A17G
Document Number DS33594 Rev. 5 - 2
6 of 6
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March 2015
© Diodes Incorporated
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ZXMP7A17G
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
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