SIEMENS Silicon Switching Diode @ For high-speed switching BAL 74 VPS05161 Type Marking Ordering Code Pin Configuration Package") (tape and reel) BAL 74 JCs Q62702-A718 o_fo _ | SOT-23 3 2 EHADO001 Maximum Ratings Parameter Symbol Values Unit Reverse voltage Va 50 Vv Peak reverse voltage Vem 50 Forward current Ir 250 mA Surge forward current, f= 1 us Irs 45 A Total power dissipation, Ts = 54 C Prot 370 mW Junction temperature Tj 150 Cc Storage temperature range Tig 65... + 150 Thermal Resistance Junction - ambient?) Rina < 330 K/AV Junction - soldering point Rinus < 260 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group 138 5.91SIEMENS BAL 74 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. DC characteristics Breakdown voltage Jer) = 100 pA Vier) 50 - - Forward voltage fe = 100mA Ve Reverse current Va =50V Va = 50 V, Ta = 150 C Tr b& AC characteristics Diode capacitance Va =0V, f= 1 MHz Co pF Reverse recovery time Ir = 10 mA, In = 10 mA, Ri = 100 QO measured at Jn=1mA tr ns Test circuit for reverse recovery time ONL. LU t, Oscitlograph tweet Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 502 Semiconductor Group Oscillograph: R= 500 139 tr = 0.35 ns C<1pFSIEMENS BAL 74 Forward current /r = f (7a*; Ts) Reverse current /r = f (Ta) * Package mounted on epoxy 300 BAL 74 EHBGOOOT 10 BAL 74 EHe00002 Ip nA mA q L, NN | 104 200 NN 5 N \\ iq 103 NTN AN 5 100 NM \ 10? 5 % 50 100 * 150 10" e Ik Forward current Ir = f (Vr) Ta = 25C 150 2H74 HB00003 ir mA 100 50 Semiconductor Group 0 50 100 | A c 150 Peak forward current Jeu = f(t) Ta = 25C 107! 107 3 li - 0 io- 105 1074 10 10 10 "s 10 | 140SIEMENS BAL 74 Forward voltage Vr = f (7a) BAL 74 EHBOOOOS 1.0 as 0.5 0 50 100C 150 1 Semiconductor Group