MITSUBISHI LASER DIODES ML9XX6 SERIES InGaAsP - MQ W - FP LASER DIODES TYPE NAME ML920J6S , ML920K6S ML925B6F , ML925C6F DES CRIPTION FEATURES ML9XX6 series are InGaAsP laser diodes which provides a stable, single transverse mode oscillation with emission wavelength of 1550nm and standard continuous light output of 5mW. ML9XX6 are hermetically sealed devices having the photo diode for optical output monitoring. This high performance, high reliability, and long-life laser diode is suitable for such applications as the light sources for long distance optical communication systems. 1550nm typical emission wavelength, FP -LDs Low threshold current, low operating current Wide temperature range operation (Tc=-40 to +85) High reliability, long operation life Have a lens-cap ( ML925C6F, ML920K6S ) MQW* active layer * Multiple Quantum Well APPLICATION Optical communication system ABS OLUTE MAXIMUM RATINGS Symbol Po P arameter Light output power Conditions Ratings[Note 1] Unit CW 6[4] mW VRL Reverse voltage (laser diode) - 2 V VRD Reverse voltage (P hotodiode) - 20 V IFD Forward current (P hotodiode) - 2 mA Tc Case temperature - -40 ~ +85 Storage temperature - - 40 ~ +100 Tstg ELECTRICAL/OPTICAL CHARACTERIS TICS (Tc=25 Symbol P arameter Test conditions [Note 1] Min. Typ. Max Unit Ith Iop Thereshold current CW - 10 30 mA Operating current CW,P o=5mW[3mW] - 30 50 mA Vop Operating voltage CW,P o=5mW[3mW] - Slope efficiency CW,P o=5mW[3mW] p P eak wavelength CW,P o=5mW[3mW] Spectral width (RMS) 1.1 1.5 V 0.15[0.1] 1520 0.25[0.2] - mW/mA 1550 1580 nm CW,P o=5mW[3mW] - 1.5 3 nm - 25[11] - deg. Beam divergence angle (parallel) CW,P o=5mW[3mW] Beam divergence angle CW,P o=5mW[3mW] (perpendicular) - 30[11] - deg. tr,tf Rise and Fall time If=Ith,P o=5mW[3mW],10 - 90% - 0.3 0.7 ns Im Monitoring output current CW,P o=5mW[3mW], VRD=1V 0.1 0.5 - mA ID Dark current (P hotodiode) VRD=10V - 0.01 0.1 A Ct Capacitance (P hotodiode) VRD=10V, f=1MHz - 10 20 pF Note 1 : [ ] applied to the lens cap type MITSUB ISHI ELECTRIC AUG. '01 MITSUBISHI LASER DIODES ML9XX6 S ERIES InGaAsP-MQ W-FP-LASER DIODES OUTLINE DRAWINGS ML920J6S ML925B6F (4) (3) (2) (1) Case PD ML925B6F (3) (2) Case PD LD (4) (1) ML920J6S (4) ML920K6S ML925C6F (3) Case PD (2) (1) ML925C6F (2) (3) Case PD LD (4) MITSUB ISHI ELECTRIC (1) ML920K6S AUG. '01 MITSUBISHI LASER DIODES ML9XX6 S ERIES InGaAsP-MQ W-FP-LASER DIODES TYPICAL CHARACTERISTICS Tc(C) 25 50 75 85 -30 8 Relative intensity (dB) Light output Po (mW) 10 6 4 2 Po=5mW, C W Tc=25C -40 -50 -60 -70 0 0 20 40 60 80 100 Forward current If (mA) -80 1525 1550 1575 Wave le ngth (nm) Fig.1 Light output vs. forward current Fig.2 Spectrum 1.2 Po=5mW Tc=25C Relative light output 1.0 0.8 0.6 0.4 / / 0.2 0.0 -60 -40 -20 0 20 40 60 Angle (deg.) Fig.3 Far field patterns MITSUB ISHI ELECTRIC AUG. '01