BSS8402DWQ-7 - DIODES INC - Datasheet.Live

BSS8402DW

Document number: DS30380 Rev. 22 - 2

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BSS8402DW

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

Device

BVDSS

RDS(ON) Max

ID

TA = +25°C

Q1

60V

13.5Ω @ VGS = 10V

115mA

Q2

-50V

10Ω @ VGS = -5V

-130mA

Description

This MOSFET has been designed to minimize the on-state resistance

(RDS(ON)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

 General Purpose Interfacing Switch

 Power Management Functions

 Analog Switch

Features and Benefits

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Complementary Pair

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: SOT363

 Case Material: Molded Plastic. “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.006 grams (Approximate)

Ordering Information (Note 5)

Part Number

Compliance

Case

Packaging

BSS8402DW-7-F

Standard

SOT363

3,000/Tape & Reel

BSS8402DW-13-F

Standard

SOT363

10,000/Tape & Reel

BSS8402DWQ-7

Automotive

SOT363

3,000/Tape & Reel

BSS8402DWQ-13

Automotive

SOT363

10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified. For more information, please refer to https://www.diodes.com/quality/.

5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

Date Code Key

Year

2003

2004

2005

2006

~

2018

2019

2020

2021

2022

2023

2024

2025

2026

Code

P

R

S

T

~

F

G

H

I

J

K

L

M

N

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

SOT363

Top View

Internal Schematic

S

2

D

2

Q1Q2

D

1

S

1

G

2

G

1

e3

KNP = Product Type Marking Code

YM or YM= Date Code Marking

Y or Y = Year (ex: F = 2018)

M = Month (ex: 9 = September)

BSS8402DW

Document number: DS30380 Rev. 22 - 2

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BSS8402DW

Maximum Ratings – Total Device (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 6)

PD

200

mW

Thermal Resistance, Junction to Ambient

RθJA

625

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Maximum Ratings N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Drain-Gate Voltage RGS  1.0MΩ

VDGR

60

V

Gate-Source Voltage Continuous

Pulsed

VGSS

±20

±40

V

Drain Current (Note 6) Continuous

Continuous @ +100°C

Pulsed

ID

115

73

800

mA

Maximum Ratings P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-50

V

Drain-Gate Voltage RGS  20KΩ

VDGR

-50

V

Gate-Source Voltage Continuous

VGSS

20

V

Drain Current (Note 6) Continuous

ID

-130

mA

Note: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Incorporated’s suggested pad layout document,

which can be found on our website at http://www.diodes.com/package-outlines.html.

BSS8402DW

Document number: DS30380 Rev. 22 - 2

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BSS8402DW

Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60

70



V

VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current @ TC = +25°C

@ TC = +125°C

IDSS



1.0

500

µA

VDS = 60V, VGS = 0V

Gate-Body Leakage

IGSS



±10

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1.0



2.5

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance @ TJ = +25°C

@ TJ = +125°C

RDS(ON)



3.2

4.4

7.5

13.5

Ω

VGS = 5.0V, ID = 0.05A

VGS = 10V, ID = 0.5A

On-State Drain Current

ID(ON)

0.5

1.0



A

VGS = 10V, VDS = 7.5V

Forward Transconductance

gFS

80



mS

VDS =10V, ID = 0.2A

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss



22

50

pF

VDS = 25V, VGS = 0V, f = 1.0MHz

Output Capacitance

Coss



11

25

pF

Reverse Transfer Capacitance

Crss



2.0

5.0

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)



7.0

20

ns

VDD = 30V, ID = 0.2A,

RL = 150Ω, VGEN = 10V, RGEN = 25Ω

Turn-Off Delay Time

tD(OFF)



11

20

ns

Electrical Characteristics P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

-50



V

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS







-1

-2

-100

µA

nA

VDS = -50V, VGS = 0V, TJ = +25°C

VDS = -50V, VGS = 0V, TJ = +125°C

VDS = -25V, VGS = 0V, TJ = +25°C

Gate-Body Leakage

IGSS



10

nA

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

-0.8



-2.0

V

VDS = VGS, ID = -1mA

Static Drain-Source On-Resistance

RDS(ON)



10

Ω

VGS = -5V, ID = -0.100A

Forward Transconductance

gFS

0.05



S

VDS = -25V, ID = -0.1A

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss



45

pF

VDS = -25V, VGS = 0V, f = 1.0MHz

Output Capacitance

Coss



25

pF

Reverse Transfer Capacitance

Crss



12

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)



10



ns

VDD = -30V, ID = -0.27A,

RGEN = 50Ω, VGS = -10V

Turn-Off Delay Time

tD(OFF)



18



ns

Note: 7. Short duration pulse test used to minimize self-heating effect.

BSS8402DW

Document number: DS30380 Rev. 22 - 2

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March 2018

BSS8402DW

N-CHANNEL – 2N7002 Section

0

0.2

0.4

0.6

0.8

1.0

0 1 2 3 4 5

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 On-Region Characteristics

DS

I , DRAIN-SOURCE CURRENT (A)

D

0

1

2

3

4

5

0 0.2 I , DRAIN CURRENT (A)

Figure 2 On-Resistance vs. Drain Current

D

T = 25 C

j

°

6

7

0.4 0.6 0.8 1.0

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



1.0

1.5

2.0

2.5

3.0

-55 -30 -5 20 45 70 95 120 145

T , JUNCTION TEMPERATURE ( C)

Figure 3 On-Resistance vs. Junction Temperature

J°

V = 10V,

IGS

D = 200mA

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



0

V , GATE TO SOURCE VOLTAGE (V)

Figure 4 On-Resistance vs. Gate-Source Voltage

GS

1

2

3

4

5

6

0 2 4 6 8 10 12 14 16 18

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



0

2

1

4

3

0 0.2 0.4 0.6 0.8 1

V GATE-SOURCE CURRENT (V)

GS,

I , DRAIN CURRENT (A)

Figure 5 Typical Transfer Characteristics

D

6

5

8

7

10

9V = 10V

DS

0

50

100

150

200

250

025 50 75 100 125 150 175 200

P , POWER DISSIPATION (mW)

D

T , AMBIENT TEMPERATURE ( C)

Figure 6 Max Power Dissipation vs. Ambient Temperature

A°

BSS8402DW

Document number: DS30380 Rev. 22 - 2

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BSS8402DW

P-CHANNEL – BSS84 Section

0

-600

-500

-400

-300

-200

-100

0-2-1 -5-4-3

I , DRAIN-SOURCE CURRENT (mA)

D

V , DRAIN-SOURCE (V)

DS

Figure 9 Drain-Source Current vs. Drain-Source Voltage

T = 25 C

A°

-0.0

-1.0

-0.8

-0.6

-0.4

-0.2

0-2 -3 -4-1 -8-7

-6

-5

I , DRAIN CURRENT (A)

D

V , GATE-TO-SOURCE VOLTAGE (V)

GS

Figure 10 Drain Current vs. Gate-Source Voltage

V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(

T

H

)

0.8

1

1.2

1.4

1.6

1.8

2

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE (°C)

Figure 8 Gate Threshold Variation vs. Junction Temperature

J

VGS(TH), GATE THRESHOLD VOLTAGE (V)

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 7 Typical Drain-Source Leakage Current vs. Voltage

I

,

D

R

A

I

N

L

E

A

K

A

G

E

C

U

R

E

N

T

(

n

A

)

D

S

1000

5

10

15

20

25

30

35

40

45

50

55

60

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

100

10

1

IDSS, DRAIN LEAKAGE CURRENT (nA)

0

1

2

4

5

3

6

8

7

10

9

0-1 -2 -3 -4 -5

V , GATE TO SOURCE (V)

Figure 11 On-Resistance vs. Gate-Source Voltage

GS

T = 25 C

A °

T = 125 C

A°

R , STATIC DRAIN-SOURCE

ON-RESISTANCE ( )

DS(ON)



0

3

6

9

12

15

-50 -25 025 50 12510075 150

T , JUNCTION TEMPERATURE (

癈

)

Figure 12 On-Resistance vs. Junction Temperature

J

V = -10V

I = -0.13A

GS

D

R , ON-RESISTANCE ( )

DS 

VDS, DRAIN-SOURCE VOLTAGE (V)

VGS, GATE TO SOURCE VOLTAGE (V)

(°C)

BSS8402DW

Document number: DS30380 Rev. 22 - 2

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BSS8402DW

0.0

5.0

10.0

-0.0 -0.2 -0.4 -0.6 -0.8 1.0

I , DRAIN CURRENT (A)

Figure 13 On-Resistance vs. Drain Current

D

15.0

20.0

25.0

V = -8V

GS

V = -10V

GS

V = -3V

GS

V = -3.5V

GS

V = -4V

GS V = -6V

GS

V = -5V

GS

R , ON-RESISTANCE ( )

DS 

-

V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(

T

H

)

T , JUNCTION TEMPERATURE (°C)

Figure 15 Gate Threshold Variation vs. Junction Temperature

J

0.8

1

1.2

1.4

1.6

1.8

2

-50

-25

0

25

50

75

100

125

150

-VGS(TH), GATE THRESHOLD VOLTAGE (V)

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 14 Typical Drain-Source Leakage Current vs. Voltage

-

I

,

D

R

A

I

N

L

E

A

K

A

G

E

C

U

R

E

N

T

(

n

A

)

D

S

1000

5

10

15

20

25

30

35

40

45

50

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

100

10

1

-IDSS, DRAIN LEAKAGE CURRENT (nA)

BSS8402DW

Document number: DS30380 Rev. 22 - 2

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BSS8402DW

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT363

Dim

Min

Max

Typ

A1

0.00

0.10

0.05

A2

0.90

1.00

0.95

b

0.10

0.30

0.25

c

0.10

0.22

0.11

D

1.80

2.20

2.15

E

2.00

2.20

2.10

E1

1.15

1.35

1.30

e

0.650 BSC

F

0.40

0.45

0.425

L

0.25

0.40

0.30

a

0°

8°

--

All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT363

e

D

L

E1

b

E

F

A2

A1

ca

Dimensions

Value

(in mm)

C

0.650

G

1.300

X

0.420

Y

0.600

Y1

2.500

Y1 G

Y

X

C

BSS8402DW

Document number: DS30380 Rev. 22 - 2

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BSS8402DW

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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