DATA SH EET
Product specification
Supersedes data of 1999 May 06 2001 Oct 12
DISCRETE SEMICONDUCTORS
BAT721 series
Schottky barrier (double) diodes
a
ge
M3D088
2001 Oct 12 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT721 series
FEATURES
•Ultra high switching speed
•Low forward voltage
•Guard ring protected
•Small plastic SMD package.
APPLICATIONS
•Ultra high-speed switching
•Voltage clamping
•Protection circuits.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
MARKING
Note
1. ∗= p : Made in Hong Kong.
∗= t : Made in Malaysia.
∗= W: Made in China.
TYPE NUMBER MARKING
CODE(1)
BAT721 L7∗
BAT721A L8∗
BAT721C L9∗
BAT721S L0∗
PINNING
PIN BAT721
ACS
1ak
1a
1a
1
2 n.c. k2a2k2
3ka
1
,a
2k
1
,k
2k
1
,a
2
Fig.1 Simplified outline
(SOT23) and pin
configuration.
handbook, 2 columns
21
3
MGC421
Top view
Fig.2 BAT721 single diode
configuration (symbol).
3
12
n.c.
MLC357
Fig.3 BAT721A diode
configuration (symbol).
3
12
MLC360
Fig.4 BAT721C diode
configuration (symbol).
3
12
MLC359
Fig.5 BAT721S diode
configuration (symbol).
3
12
MLC358
2001 Oct 12 3
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT721 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
Note
1. Pulse test: tp≤300 µs; δ≤0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous reverse voltage −40 V
IFcontinuous forward current −200 mA
IFSM non-repetitive peak forward current tp= 8.3 ms half sinewave; JEDEC
method −1A
T
stg storage temperature −65 +150 °C
Tjjunction temperature −125 °C
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFcontinuous forward voltage see Fig.6
IF=10mA −300 mV
IF= 100 mA −420 mV
IF= 200 mA −550 mV
IRcontinuous reverse current VR= 30 V; see Fig.7 −15 µA
VR=30V; T
j= 100 °C; see Fig.7 −3mA
C
ddiode capacitance f = 1 MHz; VR= 0; see Fig.8 40 50 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
2001 Oct 12 4
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT721 series
GRAPHICAL DATA
Fig.6 Forward current as a function of forward
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
handbook, halfpage
VF (mV)
IF
(mA)
150 250 350 450 550
103
102
10
10−1
1
MBK575
(1)
(2)
(3)
Fig.7 Reverse current as a function of reverse
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
handbook, halfpage
4030 VR (V)
IR
(mA)
010 20
1
10−1
10−2
10−3
MBK576
(1)
(2)
(3)
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
4030 VR (V)
Cd
(pF)
01020
10
2
10
1
MBK574
2001 Oct 12 5
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT721 series
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
2001 Oct 12 6
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT721 series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveys nolicence ortitle
under any patent, copyright, or mask work right to these
products,and makes norepresentationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Oct 12 7
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT721 series
NOTES
© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613514/03/pp8 Date of release: 2001 Oct 12 Document order number: 9397 750 08763
