AON6292 100V N-Channel MOSFET General Description Product Summary VDS * The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. * RoHS and Halogen-Free Compliant RDS(ON) (at VGS=10V) < 6m RDS(ON) (at VGS=6V) < 8.5m 100% UIS Tested 100% Rg Tested DFN5X6 Top View 100V 85A ID (at VGS=10V) D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25C Pulsed Drain Current C Continuous Drain Current V A 220 24 IDSM TA=70C 20 67 IDM TA=25C Units V 85 ID TC=100C Maximum 100 A 20 Avalanche Current C IAS 50 A Avalanche energy L=0.1mH C TC=25C EAS 125 mJ Power Dissipation B TC=100C Power Dissipation A TA=70C TA=25C Rev 1.0: February 2016 7.3 Steady-State Steady-State RJA RJC W 4.7 TJ, TSTG Symbol t 10s W 62.5 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 156 PD -55 to 150 Typ 14 40 0.55 www.aosmd.com C Max 17 55 0.8 Units C/W C/W C/W Page 1 of 6 AON6292 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V 100 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A 2.2 ID(ON) On state drain current VGS=10V, VDS=5V 220 TJ=55C 100 nA 2.8 3.4 V 4.8 6 8.6 10.8 VGS=6V, ID=20A 6 8.5 m 1 V 85 A Static Drain-Source On-Resistance TJ=125C A gFS Forward Transconductance VDS=5V, ID=20A 60 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units A 5 VGS=10V, ID=20A Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz S 3830 pF 327 pF 16.5 VGS=0V, VDS=0V, f=1MHz 0.3 m 0.65 pF 1.0 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 45 63 nC Qg(4.5V) Total Gate Charge 15.5 22 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=50V, ID=20A VGS=10V, VDS=50V, RL=2.5, RGEN=3 16 nC 7 nC 13 ns 4 ns 26 ns tf Turn-Off Fall Time 4.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/s 19 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 225 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1.0: February 2016 www.aosmd.com Page 2 of 6 AON6292 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 5V 7V 80 60 60 ID(A) ID (A) 80 40 40 4.5V 20 125C 20 VGS=4.0V 25C 0 0 0 1 2 3 4 1 5 10 3 4 5 6 Normalized On-Resistance 2.2 8 RDS(ON) (m) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=6V 6 4 VGS=10V 2 VGS=10V ID=20A 1.8 17 5 2 VGS=6V10 1.6 1.4 1.2 ID=20A 1 0.8 2 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 15 1.0E+02 ID=20A 1.0E+01 IS (A) RDS(ON) (m) 40 1.0E+00 125C 10 5 125C 1.0E-01 1.0E-02 25C 1.0E-03 25C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1.0: February 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6292 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4500 VDS=50V ID=20A 4000 3500 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 3000 2500 Coss 2000 1500 1000 2 500 0 Crss 0 0 10 20 30 40 50 0 20 Qg (nC) Figure 7: Gate-Charge Characteristics 40 60 100 500 1000.0 TJ(Max)=150C TC=25C 450 10s 10s RDS(ON) 10.0 100s 1.0 1ms 10ms DC 400 Power (W) 100.0 ID (Amps) 80 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150C TC=25C 0.1 350 17 5 2 10 300 250 200 150 100 0.0 0.01 0.1 1 10 100 1000 50 0.0001 0.001 0.01 0.1 1 10 100 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) (Note F) ZJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 40 RJC=0.8C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1.0: February 2016 www.aosmd.com Page 4 of 6 AON6292 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 TA=25C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100C 100 TA=150C 10 TA=125C 1 150 100 50 0 1 10 100 1000 0 25 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note F) 10000 100 TA=25C 80 1000 Power (W) Current rating ID(A) 50 60 40 17 5 2 10 100 10 20 1 1E-05 0 0 25 50 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note F) ZJA Normalized Transient Thermal Resistance 0.1 100 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 0.001 40 RJA=55C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 0.1 T 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1.0: February 2016 www.aosmd.com Page 5 of 6 AON6292 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 1.0: February 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6