AON6292
100V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 85A
R
DS(ON)
(at V
GS
=10V) < 6mΩ
R
DS(ON)
(at V
GS
=6V) < 8.5mΩ
100% UIS Tested
100% R
g
Tested
Symbol
• The AON6292 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of R
DS(ON)
, Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
• RoHS and Halogen-Free Compliant
Maximum
Units
Parameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
100V
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View Bottom View
Symbol
V
DS
V
GS
I
DM
I
AS
E
AS
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
0.55
55
0.8
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
156
4.7
T
A
=25°C
T
C
=25°C
7.3
62.5
T
C
=100°C
Power Dissipation
B
P
D
A
T
A
=25°C I
DSM
A
T
A
=70°C
I
D
85
67
T
C
=25°C
T
C
=100°C
220Pulsed Drain Current
C
Continuous Drain
Current
G
mJ
Avalanche Current
C
20
Continuous Drain
Current
125
24
A50
Avalanche energy L=0.1mH
C
V
Maximum
Units
Parameter
Units
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
Parameter Typ Max
V±20Gate-Source Voltage
Drain-Source Voltage 100
Maximum Junction-to-Ambient
A
°C/W
R
θJA
14
40
17
Rev 1.0: February 2016
www.aosmd.com Page 1 of 6
AON6292
Symbol Min Typ Max Units
BV
DSS
100 V
V
DS
=100V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 2.2 2.8 3.4 V
I
D(ON)
220 A
4.8 6
T
J
=125°C 8.6 10.8
6 8.5 mΩ
g
FS
60 S
V
SD
0.7 1 V
I
S
85 A
C
iss
3830 pF
C
oss
327 pF
C
rss
16.5 pF
R
g
0.3 0.65 1.0 Ω
Q
g
(10V) 45 63 nC
Q
g
(4.5V) 15.5 22 nC
Q
gs
16 nC
Q
gd
7 nC
t
D(on)
13 ns
t
4
ns
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Gate-Body leakage current
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=50V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Forward Transconductance
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
DYNAMIC PARAMETERS
V
GS
=6V, I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
mΩ
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
Turn-On Rise Time
V
=10V, V
=50V, R
=2.5
Ω
,
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-On DelayTime
V
GS
=10V, V
DS
=50V, I
D
=20A
t
r
4
ns
t
D(off)
26 ns
t
f
4.5 ns
t
rr
19 ns
Q
rr
225 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=50V, R
L
=2.5
Ω
,
R
GEN
=3Ω
Turn-Off Fall Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 1.0: February 2016 www.aosmd.com Page 2 of 6
AON6292
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
20
40
60
80
100
1 2 3 4 5 6
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2
4
6
8
10
0 5 10 15 20 25 30
RDS(ON) (mΩ)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=6V
ID=20A
VGS=10V
ID=20A
25°C
125°C
VDS=5V
VGS=6V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.0V
4.5V
7V
10V 5V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
5
10
15
2 4 6 8 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev 1.0: February 2016 www.aosmd.com Page 3 of 6
AON6292
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 10 20 30 40 50
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 20 40 60 80 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
50
100
150
200
250
300
350
400
450
500
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Coss
C
rss
VDS=50V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
10
µ
s
10ms
1ms
DC
RDS(ON)
TJ(Max)=150°C
TC=25°C
100
µ
s
40
(Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Safe Operating Area (Note F)
RθJC=0.8°C/W
Rev 1.0: February 2016 www.aosmd.com Page 4 of 6
AON6292
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
50
100
150
200
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 13: Power De-rating (Note F)
0
20
40
60
80
100
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 14: Current De
-
rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction
-
to
-
TA=25°C
1
10
100
1000
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
40
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 14: Current De
-
rating (Note F)
Figure 15: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
RθJA=55°C/W
Rev 1.0: February 2016 www.aosmd.com Page 5 of 6
AON6292
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VD C
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev 1.0: February 2016 www.aosmd.com Page 6 of 6
