BBD ) mm B235605 OOL430 8 MMSIEG gap 14930 0 T 39~// BUZ 216 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel 5 Drain-source voltage Vog = SOO0V . Continuous drain current Ih =44Aa Drain-source on-resistance Apson = 22 G Description FREDFET with fast-recovery reverse diode, N-channel, enhancement mode. s t Case Plastic package 14A3 in accordance with DIN 41 869, : or TO 220 AB in accordance with JEDEC. i The drain terminal is conductively connected to the mounting flange. . Approx. weight 2 g Type | Ordering code BuUz216 | _C67078-A1402-A2 sa = ples 5 = + min oh Hae Ce: i a 13,5: 15, Dimensions in mm Maximum ratings Description Symbols | Ratings Units Conditions Drain-source voltage Vos 500 Vv Draln-gate voltage Veer 500 Vv Reg = 20 kD Continuous drain current bh 4,4 A To = 25C Pulsed drain current Jopus 17 A To = 25C Gate-source voitage Veg +20 Vv Max. power dissipation Po 75 Ww Tg = 25C Operating and storage qj temperature range Tag 5...+150 | C DIN humidity category E - DIN 40040 IEC climatic category 5/150/56 DIN IEC 68-1 Therma! resistance Chip case Aine = 1,67 K/W Chip ambient Aga 275 K/W 640 1222 c-131223 64) ) 8235605 OO1L4932 T MESIEG 88D 14931 bo T- - a . 39 // BUZ 216 SIEMENS AKTIENGESELLSCHAF Electrical characteristics (at 7; = 25C unless otherwise specified) Description Symbol | Characteristics Unit | Conditions min. | typ. | max. Static ratings Drain-source Vian) pss 500 - ~ Vv Veg = OV breakdown voltage Ip = 0,25mA Gate threshold voltage Vas cn) 21 3,0 4,0 Vos = Vas ih = 1mA Zero gate voltage loss - 20 250 LA Ro = 26C drain current - 100 =| 1000 qj = 126C Vog = 500V Veg = OV Gate-source leakage Tess - 10 100 nA | Ys = 20V current Vog = OV Draln-source Fos ton) _ 1,7 2,0 Q Ys = 10V on-resistance h = 32A Dynamic ratings Forward Gs 15 2,7 - Ss Vog = 25V transconductance h = 3,2A Input capacitance Ciss _ 15 2,0 nF Veg = OV Output capacitance Cuss - 110 | 170 pF Vos = 25V Reverse transfer Cras - 40 70 fo o= IMH2 capacitance Turn-on time {, bs ton) - 30 45 ns Vog = 30V (fon = fa ton) + &) - 40 60 h = 2,58 Turn-off time for ty tom - {110 | 140 ies = ee (fon = taco + i - [60 [6 Fast-recovery reverse diode Continuous reverse lor - - 44 A To = 25C drain current Pulsed reverse drain bam - - 17 current Diode forward on-voltage Veo - 1,3 1,6 Vv & =2x Ip Veg = OV, 7, = 25C Reverse recovery time ty - 180 | 250 ns j= 25C | = ha ere ii Reserve recovery charge 2, - 0,65 | 1,2 uC F= 25C y= HS A= = = - = 160C | 100V Repetitive peak reverse Tapa - - - A T= 25C current _ 15 _ = 150C 641 C~1434D) ) MM 8235605 OOL4932 1 MESIEG Bap 14932. oD 7 39-// SIEMENS AKTIENGESELLSCHAF BUZ 216 Power dissipation Pp = f(T>} Typical output characterlatics Ip = f(Vog) parameter: 80 ps pulse test, i= 80 W 70 60 50 40 30 20 4N 0 50 100 C 150 0 20 0 6 Vv 80 o To > Voc Safe operating area Ip = f(Vps) Typical transfer characteristle Jy = f( Vas) parameter: D = 0.01, 7g = 25C parameter: 80 ps pulse test, Vos = 25V, Tj = 25C 10 A 5 10 0 5 Vv 10 _ VGs5aap) D MM@ 8235605 0014933 3 M@MSIEG \ sap 14933 0 7Ba~// _. ____ SIEMENS AKTIENGESELLSCHAF - BUZ 216 Typical drain-source on-state resistance Drain-source on-state resistance Ros = (Ip) Ros = (7) pararigter: Vag: Tj = 25C paramater: h'= 3,2A, Veg = 10V (spread) a 5 Q Rosion) R Rosten) mete 0 50 100 c 150 Fj Typleal transconductance g, = f{Jp) Gate threshold voltage Vasithy = 07} parameter: 80 1s pulse test, parameter: Vog = Veg Ip = mA Vos = 25V, Ty = 25C (spread) 5 Vv Vestn 0 0 1 2 3 4 5 6AT - 50 0 SO 100 C 150 a ly oe Tj 1225 0-02 64888D) D MM 6235605 0024934 5 MBSIEG sep 14934 0 OTe 34~// BUZ 216 _____ SIEMENS AKTIENGESELLSCHAF Typical capacitances C = f(pg) Continuous drain current Ip = f(7o) parameter: Vgg = 0, f= IMHz parameter: Veg 2 10V 10! nF c 3 10 407 0 50 100 C 150 0 _ 10 20 30 V 40 Yas Forward characteristic of reverse diode ir = f (Yep) parameter: 7}, f, = 80 ys (spread) 10? A R 3 10! 5 Ey 25C typ. 150C 25C (98%) 150 C (98%} 10 5 107 0 644 1226 0-032 nae 107 8&8) D MM 8235605 0014935 7 MMSIEG sso 14935 Dp Pr 3F-// SIEMENS AKTIENGESELLSCHAF BUZ 216 Transient thermal Impedance Zyjo = F(t) parameter: D = ,/T K W 40 107 5 105 5 10% 103 5 10? 5 107 5 10 s 10! F Typleal gate-charge Vag = f (Qgate) parameter: Jp pus = 6,8A iS 122? v O gate 0-04