PD-91787I IRHNA57Z60 JANSR2N7467U2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) REF: MIL-PRF-19500/683 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNA57Z60 100K Rads (Si) IRHNA53Z60 300K Rads (Si) RDS(on) ID 0.0035 75A* 0.0035 75A* QPL Part Number JANSR2N7467U2 JANSF2N7467U2 IRHNA54Z60 0.0035 75A* JANSG2N7467U2 500K Rads (Si) IRHNA58Z60 1000K Rads (Si) 0.0040 75A* JANSH2N7467U2 SMD-2 International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units 75* 75* 300 250 2.0 20 500 75 25 0.83 -55 to 150 A W W/C V mJ A mJ V/ns o C 300 (for 5s) 3.3 (Typical) g * Current is limited by package For footnotes refer to the last page www.irf.com 1 03/08/07 IRHNA57Z60, JANSR2N7467U2 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Min Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units 30 -- -- V -- 0.026 -- V/C -- -- 0.0035 2.0 45 -- -- -- -- -- -- 4.0 -- 10 25 V S( ) A IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 100 -100 200 55 40 35 125 80 50 -- Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 9110 4620 150 -- -- -- nA nC ns nH pF Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 75A A Parameter BVDSS VDS = VGS, ID = 1.0mA VDS 15V, IDS = 45A A VDS= 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 15V VDD = 15V, ID = 45A, VGS =12V, RG = 2.35 Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A -- -- -- -- 75* 300 A VSD trr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- -- -- -- -- -- 1.3 165 690 V ns nC ton Forward Turn-On Time Test Conditions Tj = 25C, IS = 75A, VGS = 0V A Tj = 25C, IF = 45A, di/dt 100A/s VDD 25V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max -- -- -- 1.6 0.5 -- Units C/W Test Conditions soldered to a 2" square copper-clad board Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHNA57Z60, JANSR2N7467U2 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Test Conditions Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (SMD-2) Diode Forward Voltage A 30 2.0 -- -- -- -- -- 4.0 100 -100 10 0.004 30 1.5 -- -- -- -- -- 4.0 100 -100 25 0.0045 A VGS = 0V, I D = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS =24V, VGS =0V VGS = 12V, ID =45A -- 0.0035 -- 0.004 VGS = 12V, ID =45A -- 1.3 V VGS = 0V, IS = 45A -- 1.3 V nA 1. Part numbers IRHNA57Z60 (JANSR2N7467U2), IRHNA53Z60 (JANSF2N7467U2) and IRHNA54Z60 (JANSG2N7467U2) 2. Part number IRHNA58Z60 (JANSH2N7467U2) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Energy (MeV) 261 285 344 VDS Cu Br I LET (MeV/(mg/cm2)) 28 37 60 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 40 30 30 30 25 15 37 30 30 30 23 15 33 25 25 20 15 8 35 30 25 20 15 10 5 0 Cu Br I 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA57Z60, JANSR2N7467U2 1000 VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 5.0V 60s PULSE WIDTH Tj = 25C 10 0.1 1 10 60s PULSE WIDTH Tj = 150C 10 100 0.1 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) T J = 150C 100 T J = 25C 10 VDS = 25V 60s PULSE 15 WIDTH 1 5.5 6 6.5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics 1000 5 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 4.5 5.0V 100 VDS, Drain-to-Source Voltage (V) 4 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 Pre-Irradiation 7 45AA ID = 75 1.5 1.0 0.5 0.0 -60 -40 -20 VGS =12V 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 20000 IRHNA57Z60, JANSR2N7467U2 15000 Coss Ciss 10000 5000 ID = 45 A VDS = 24V VDS = 15V 15 10 5 FOR TEST CIRCUIT SEE FIGURE 13 Crss 0 1 10 0 100 0 25 VDS , Drain-to-Source Voltage (V) 1000 1000 100 125 150 175 200 225 OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 25 C ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 75 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 150 C 100 50 QG , Total Gate Charge (nC) 100s 100 10 1 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1ms 1 3.5 10ms 10 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNA57Z60, JANSR2N7467U2 Pre-Irradiation 250 RD VDS LIMITED BY PACKAGE VGS 200 D.U.T. ID , Drain Current (A) RG 150 + -V DD VGS Pulse Width 1 s Duty Factor 0.1 % 100 Fig 10a. Switching Time Test Circuit VDS 50 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 0.001 0.00001 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA57Z60, JANSR2N7467U2 15V L VDS D.U.T. RG VGS 20V IAS TOP 1000 DRIVER + - VDD 0.01 tp EAS , Single Pulse Avalanche Energy (mJ) 1200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS A BOTTOM ID 34A 47A 75A 800 600 400 200 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) 150 tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12 V QGS .3F D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 12V .2F IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNA57Z60, JANSR2N7467U2 Pre-Irradiation Footnotes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 0.3mH Peak IL = 75A, VGS = 12V A ISD 75A, di/dt 94A/s, VDD 30V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 24 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2007 8 www.irf.com