JANSF2N7467U2 - International Rectifier

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 75*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 75*

IDM Pulsed Drain Current À300

PD @ TC = 25°C Max. Power Dissipation 250 W

Linear Derating Factor 2.0 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy Á500 mJ

IAR Avalanche Current À75 A

EAR Repetitive Avalanche Energy À25 mJ

dv/dt Peak Diode Recovery dv/dt Â0.83 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

Pckg. Mounting Surface Temp. 300 (for 5s)

Weight 3.3 (Typical) g

Pre-Irradiation

International Rectifier’s R5TM technology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm2)). The combination

of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

oC

A

RADIATION HARDENED JANSR2N7467U2

POWER MOSFET 30V, N-CHANNEL

SURFACE MOUNT (SMD-2) REF: MIL-PRF-19500/683

03/08/07

www.irf.com 1

* Current is limited by package

SMD-2

Product Summary

Part Number Radiation Level RDS(on) IDQPL Part Number

IRHNA57Z60 100K Rads (Si) 0.0035Ω 75A* JANSR2N7467U2

IRHNA53Z60 300K Rads (Si) 0.0035Ω 75A* JANSF2N7467U2

IRHNA54Z60 500K Rads (Si) 0.0035Ω 75A* JANSG2N7467U2

IRHNA58Z60 1000K Rads (Si) 0.0040Ω 75A* JANSH2N7467U2

Features:

nSingle Event Effect (SEE) Hardened

nUltra Low RDS(on)

nLow Total Gate Charge

nSimple Drive Requirements

nEase of Paralleling

nHermetically Sealed

nSurface Mount

nCeramic Package

nLight Weight

For footnotes refer to the last page



55



IRHNA57Z60

TECHNOLOGY

PD-91787I

IRHNA57Z60, JANSR2N7467U2 Pre-Irradiation

2www.irf.com

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.026 — V/°C Reference to 25°C, ID = 1.0mA

Voltage

RDS(on) Static Drain-to-Source On-State — — 0.0035 ΩVGS = 12V, ID = 75A

Resistance

VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA

gfs Forward Transconductance 45 — — S ( )V

DS ≥ 15V, IDS = 45A Ã

IDSS Zero Gate Voltage Drain Current — — 10 VDS= 24V ,VGS=0V

——25 V

DS = 24V,

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V

IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V

QgTotal Gate Charge — — 200 VGS =12V, ID = 45A

Qgs Gate-to-Source Charge — — 55 nC VDS = 15V

Qgd Gate-to-Drain (‘Miller’) Charge — — 40

td(on) Turn-On Delay Time — — 35 VDD = 15V, ID = 45A,

trRise Time — — 125 VGS =12V, RG = 2.35Ω

td(off) Turn-Off Delay Time — — 80

tfFall Time — — 50

LS + LDTotal Inductance — 4.0 —

Ciss Input Capacitance — 9110 — VGS = 0V, VDS = 25V

Coss Output Capacitance — 4620 — pF f = 1.0MHz

Crss Reverse Transfer Capacitance — 150 —

nA

Ω

Ã

nH

ns

µA

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

RthJC Junction-to-Case — — 0.5

RthJ-PCB Junction-to-PC board — 1.6 — soldered to a 2” square copper-clad board

°C/W

Measured from the center of

drain pad to center of source pad

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

ISContinuous Source Current (Body Diode) — — 75*

ISM Pulse Source Current (Body Diode) À— — 300

VSD Diode Forward Voltage — — 1.3 V Tj = 25°C, IS = 75A, VGS = 0V Ã

trr Reverse Recovery Time — — 165 ns Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge — — 690 nC VDD ≤ 25V Ã

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

For footnotes refer to the last page

* Current is limited by package

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IRHNA57Z60, JANSR2N7467U2

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter Up to 500K Rads(Si)1 1000K Rads (Si)2

Units

Test Conditions

Min Max Min Max

BVDSS Drain-to-Source Breakdown Voltage 30 — 30 — V VGS = 0V, ID = 1.0mA

VGS(th) Gate Threshold Voltage 2.0 4.0 1.5 4.0 VGS = VDS, ID = 1.0mA

IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V

IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V

IDSS Zero Gate Voltage Drain Current — 10 — 25 µA VDS=24V, VGS =0V

RDS(on) Static Drain-to-Source Ã — 0.004 — 0.0045 Ω VGS = 12V, ID =45A

On-State Resistance (TO-3)

RDS(on) Static Drain-to-Source Ã — 0.0035 — 0.004 Ω VGS = 12V, ID =45A

On-State Resistance (SMD-2)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHNA57Z60 (JANSR2N7467U2), IRHNA53Z60 (JANSF2N7467U2) and IRHNA54Z60 (JANSG2N7467U2)

2. Part number IRHNA58Z60 (JANSH2N7467U2)

Fig a. Single Event Effect, Safe Operating Area

VSD Diode Forward Voltage Ã — 1.3 — 1.3 V VGS = 0V, IS = 45A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion LET Energy Range VDS (V)

(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V

Cu 28 261 40 30 30 30 25 15

Br 37 285 37 30 30 30 23 15

I 60 344 33 25 25 20 15 8

0

5

10

15

20

25

30

35

-20-15-10-50

VGS

VDS

Cu

Br

I

IRHNA57Z60, JANSR2N7467U2 Pre-Irradiation

4www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

45A

15

75 A

12V

44.555.566.57

VGS, Gate-to-Source Voltage (V)

1

10

100

1000

ID, Drain-to-Source Current (A)

VDS = 25V

60µs PULSE WIDTH

TJ = 150°C

TJ = 25°C

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

10

100

1000

ID, Drain-to-Source Current (A)

60µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

5.0V

0.1 1 10 100

VDS , Drain-to-Source Voltage (V)

10

100

1000

ID, Drain-to-Source Current (A)

60µs PULSE WIDTH

Tj = 150°C

VGS

TOP 15V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

5.0V

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IRHNA57Z60, JANSR2N7467U2

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

1

10

100

1000

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

V = 0 V

GS

T = 25 C

J°

T = 150 C

J°

025 50 75 100 125 150 175 200 225

0

5

10

15

20

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

45 A

V = 15V

DS

V = 24V

DS

1 10 100

0

5000

10000

15000

20000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C SHORTED

GS

iss gs gd , ds

rss gd

oss ds gd

Coss

Ciss

Crss

Pre-Irradiation

0.1 1 10 100

VDS , Drain-toSource Voltage (V)

1

10

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Single Pulse

1ms

10ms

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µs

IRHNA57Z60, JANSR2N7467U2 Pre-Irradiation

6www.irf.com

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

+

-

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150

0

50

100

150

200

250

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

VGS

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJC C

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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IRHNA57Z60, JANSR2N7467U2

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T. V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

12 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

VDS

+

-V

DD

DRIVER

A

15V

20V

.

Pre-Irradiation

25 50 75 100 125 150

0

200

400

600

800

1000

1200

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

ID

TOP

BOTTOM

34A

47A

75A

VGS

IRHNA57Z60, JANSR2N7467U2 Pre-Irradiation

8www.irf.com

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with VGS Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

Å Total Dose Irradiation with VDS Bias.

24 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

À Repetitive Rating; Pulse width limited by

maximum junction temperature.

Á VDD = 25V, starting TJ = 25°C, L= 0.3mH

Peak IL = 75A, VGS = 12V

Â ISD ≤ 75A, di/dt ≤ 94A/µs,

VDD ≤ 30V, TJ ≤ 150°C

Case Outline and Dimensions — SMD-2

Footnotes:

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 03/2007