TT To. TT weR _ _ or a aa < 7) a _ ee _E _y Features High speed 20ns e CMOS for optimum speed/power Low active power 743 mW Low standby Power 220 mW TTL-compatible inputs and outputs Easy memory expansion with CE,, = CYPRESS CY7C185A Functional Description The CY7C185A is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE), an active HIGH chip enable (CE), an active LOW output enable (OB), and three-state drivers. The device hasan auto- matic power-down feature (CE), reducing the power consumption by over 70% when deselected. The CY7C185<A is in the stan- dard 300-mil-wide DIP package and lead- 8K x 8 Static RAM Data on the eight I/O pins (I/Og through 1/07) is written into the memory location specified on the address pins (Ag through Au). Reading the device is accomplished by tak- ing chip enable one (CE;) and output en- able (OE) LOW, while taking write enable (WE) and chip enable two (CE) HIGH. Under these conditions, the contents of the memory location specified on the address pins will appear on the I/O pins. The J/O pins remain in a high-impedance less chip carrier. CE, and OE features ue P an . state when chip enable one (CE)) or out- @ Automatic power-down when Miia tothe device ED waa wale on put enable (OE) is HIGH, or write enable deselected e chip enable one 1) and write en- AB hi ble two (CE) is LOW. able (WE) inputs are both LOW, and the (WE) or chip enable two (CE2) is chip enable two (CE) input is HIGH. A die coat is used to ensure alpha immunity. Logic Block Diagram Pin Configurations DIP Lcc Top View Top View Qi 92 3 211,28 ge 5 8 7 1. VOo 8 INPUT BUFFER 10 VO, "1 uu 12 Ay YWOo ana 8 g Nv 9 = 1/03 C1B5A3 8K x8 As GF} ARRAY 2 2 z VOg Ae 5 i Az iva As Os 4% mi WO POWER Cel COLUMN DECODER| | 2OWN WOz WE OE Ptah Oo a o = taqggdd C1B5A-1 Selection Guidel!! Current ( Current (mA Shaded area contains advanced information. Note: 1. For commercial specifications, see the CY7C185 datasheet. 2-155 MM 2589bb2 OOL4as4 619a we CY7C185A & CYPRESS Maximum Ratings (Above which the useful life may be impaired. For user guidelines, Output Current into Outputs (LOW) ............... 20 mA not tested.) Static Discharge Voltage .................00.0005 >2001V Storage Temperature ............2....4. -65C to +150C | (per MIL-STD883, Method 3015) Ambient Temperature with Latch-Up Current ........ 0... cece cece eens >200 mA : Power Applied ........... 0... ce cece eae 55C to +125C Operating Range Supply Voltage to Ground Potential Ambi : ent (Pin 28 to Pin M4) cede cece eee e eet e ees 0.5V to +7.0V Range Temperature Vec infigh 28a cae -osviostov [Miltayl! | =sscre #i25C [SV = 108% DC Input Voltagel4] .... 0... eee, -0.5V to +7.0V Electrical Characteristics Over the Operating Rangel] 7C185A20 Parameter Description Test Conditions Min. | Max. j Unit Vou Output HIGH Voltage Vec = Min., 24 Vv Tou =-40mA VoL Output LOW Voltage Vcc = Min., 0.4 Vv Io. = 8.0mA Vin Input HIGH Voltage 2.2 | Voc Vv Vit Input LOW Voltagel?i 05 | 08 Vv Ix Input Load Current GND < V] < Vcc -10 | +10 pA Toz Output Leakage Current GND < Vj] < Vcc, Output Disabled 10 | +10 pA Tos Output Short Vcc = Max., Vout = GND 300 | mA Circuit Currentl>l Icc Vcc Operating Vec = Max. Iour =0mA_ | Military 135 mA Supply Current Ispi Automatic CE; Max. Vcc, CE; > Vin, Military 40 mA Power-Down Current Min. Duty Cycle = 100% , Ispo Automatic CE, Max. Voc, Military 20 mA Power-Down Current CE; > Voc -0.3V Vin = Vec - 0.3V or Vin > 0.3V Shaded area contains advanced information. Notes: 2. Vix (min.) = 3.0V for pulse durations less than 30 ns. 3. Ty is the instant on case temperature. 4. See the last page of this specification for Group A subgroup testing in- formation. 5. _Notmore than 1 output should be shorted at one time, Duration of the short circuit should not exceed 30 seconds. 2-156 Mm 2549bbe 0014855 555es CY7C185A S37 Cyprrss Electrical Characteristics Over the Operating Rangel*! (continued) IC185A25 | 7C185A35, 45 Parameter Description Test Conditions Min. | Max. | Min. Max. Unit Vou Output HIGH Voltage Vec = Min., Ion = 4.0mA 2.4 2.4 Vv Voi Output LOW Voltage Vcc = Min., Iot = 8.0 mA 0.4 0.4 Vv Vin Input HIGH Voltage : 2.2 | Vcc 2.2 Vec Vv Vit Input LOW Voltage! -05 | 08 0.5 0.8 Vv 2 Ix Input Load Current GND < V1 <:Vcc -10 | +10 | 10 +10 yA Ioz Output Leakage Current |GND < Vi < Vcc Output Disabled -10 | +10 | 10 +10 pA Tos Output Short Vcc = Max. Vout = GND 300 300 mA . Circuit Currentl5] loc Vcc Operating Supply Vcc = Max., our = 0 mA | Military 125 -] 125 mA Current Ispi Automatic CE, Max. Vcc, CE; > Vin, Military 40 30 mA Power-Down Current Min. Duty Cycle = 100% Ispo Automatic CE, Max. Voc Military 20 20 mA Power-Down Current CE] > Vcc ~ 0.3V Vin = Voc 0.3V or Vin > 0.3V Capacitance! Parameter Description Test Conditions Max. Unit CIn Input Capacitance Ta = 25C, f = 1 MHz, 10 pF CouT Output Capacitance Voc = 5.0V 10 pF Note: 6. Tested initially and after any design or process changes that may affect these parameters. AC Test Loads and Waveforms R1 4812 Ri 4812 5V 5V ours ours ALL INPUT PULSES Re F Re 30 pF 255Q 5P 2550 INCLUDING LL INCLUDING LL JIG AND = = JIG AND = = SCOPE SCOPE C185A-4 (a) {b) Equivalent to: THEVENIN EQUIVALENT 1672 OUTPUT ow 9 1.73V 2157 Me 2589bbe 001485 441CY7C185A Switching Characteristics Over the Operating Rangel? 7) 7C1I8S5A20 | 7C185A25 | 7C185A35 Parameter M READ CYCLE tre Read Cycle Time Address to Data Valid Data Hold from Address Change 1 LOW to Data Valid CE, HIGH to Data Valid OE LOW to Data Valid LOW to Low Z HIGH to High 1 LOW to Low CE, HIGH to Low Z CE, HIGH to High CE LOW to High Z 1 LOW to Power-Up CE, HIGH to Power-Down Description taa toHA tacel tacE2 tDoE tLZ0F tHz0E tLZCEi tLzcE2 tHZzcE tu tep WRITE Write Cycle Time 1 LOW to Write End CE, HIGH to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start Pulse Width Data Set-Up to Write End Data Hold from Write End tLZWwe HIGH to Low Z tuzwe LOW to High area contains advanced information. twe tscr1 tscE2 taw tHa tsa tpwe tsp tap Notes: 7. Test conditions assume signal transition time of 5 ns or less, timing ref- erence levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified Io1/Igy and 30-pF load capacitance. tuzog, tuzce, and ty2we are specified with Cy, = 5 pF as in part (b) of AC Test Loads. Transition is measured +500 mV from steady-state voltage. 20 7C185A45 in. | Max. | Min. | Max. | Min. | Max. | Min. | Max. 28 35 45 10 15 9. At any given temperature and voltage condition, tizce is less than tizce for any given device. 10. Device is continuously selected. OF, CE = Vi_. CE, = Vin. 2-158 Mm 2585bbe 0014857 328CY7C185A CYPRESS Switching Waveforms Read Cycle No. 1 29, 12) tac ADDRESS TAA TOHA DATA OUT PREVIOUS DATA VALID *K x DATA VALID C185A-6 Read Cycle No. 2 [11,12] CE, CE, OE toor {LZ0E HIGH IMPEDANCE HIGH IMPEDANCE DATA QUT DATA VALID tizceE Voc teu Icc SUPPLY CURRENT IsB Ci85A-7 Write Cycle No. 1 (WE Controlled) [13 14] ADDRESS cE, CE, OE WE tsp DATA IN DATA\y VALID tuzoe > Lowe HIGH IMPEDANCE DATA VO DATA UNDEFINED C1B5A-8 Notes: 11. Address valid prior to or coincident with CE transition LOW. ate awrite and cither signal can terminate a write by going HIGH. The 12. WE is HIGH for read cycle. data input set-up and hold timing should be referenced to the rising 13. The internal write time of the memory is defined by the overlap of CE, edge of the signal that terminates the write. LOW, CE, HIGH, and WE LOW. Both signals must be LOW toiniti- 14. Data 1/O is high impedance if OE = Vix. 2-159 Me 258%bbe 0034856 cbyCY7C185A J CYPRESS Switching Waveforms (continued) Write Cycle No. 2 (CE Controlled) [13, 14. 15] ADDRESS CE, CEs WE tsp DATA IN DATA, VALID HIGH IMPEDANCE LO DATA /O < C185A-9 Note: __ 15. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT OUTPUT SOURCE CURRENT NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 1.4 ow a o oO bh NORMALIZED leo, Iga 2 o Isp 29 oO ff A 4.0 45 5.5 5.0 SUPPLY VOLTAGE (V) NORMALIZED ACCESS TIME ys. SUPPLY VOLTAGE 1.4 = wo NORMALIZED ta, ob = 8 S to 0.8 4.0 45 5.0 5.6 6.0 SUPPLY VOLTAGE (V) NORMALIZED leg, Ig NORMALIZED tag vs. AMBIENT TEMPERATURE 1.2 1.0 lec 0.8 0.6 0.4 0.2 Isp 0.0 ~55 25 125 AMBIENT TEMPERATURE (C) NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE ra a Voc = 5.0V A a 08 0.6 55 25 125 AMBIENT TEMPERATURE (C) 2-160 Me 258%bb2 0014859 LTO a vs. OUTPUT VOLTAGE = tf o = Q o x2 Qo 60 40 20 OUTPUT SOURCE CURRENT (mA) 0 0.0 1.0 2.0 3.0 4.0 ___ OUTPUT VOLTAGE (V) OUTPUT SINK CURRENT ys. OUTPUT VOLTAGE i40 ~ 120 a & too & 2 80 x Z 60 an 5 40 = 5 a 2 2 0 00. 10 #20 30 40 OUTPUT VOLTAGE (V)CY7C185A GFE rn055 r Typical DC and AC Characteristics (continued) TYPICAL POWER-ON CURRENT TYPICAL ACCESS TIME CHANGE : ys. SUPPLY VOLTAGE vs. OUTPUT LOADING NORMALIZED Ig vs. CYCLE TIME 3.0 30.0 1.25 7 Voc = 5.0V Ta = 25C 9 25 25.0 > Vig = O5V a eS 2 20 20.0 a 1.00 2 1.5 3 15.0 5 wa . . z z= = "| 2 1.0 2 10.0 & 075 2 a Voc = 4.5V S ~~ 0.6 5.0 Ta = 25C | 0.0 0.50 00 10 20 30 40 50 0 200 400 600 800 1000 10 20 30 40 SUPPLY VOLTAGE (V) CAPACITANCE (pF) CYCLE FREQUENCY (MHz) Truth Table CE, | CE, | WE | OE | Input/Output Mode H {xX |X | X | Highz Deselect/Power-Down x L xX X | HighZ Deselect L H H L Data Out Read L H L X | Datain Write L | H|H]H | Highz Deselect Address Designators Address Address. Pin Name Function Number A4 x3 2 AS x4 3 A6 X5 4 AT X6 5 A8 X7 6 AQ Yi 7 Al10 4 8 All Y3 9 Al2 YO 10 AO Y2 21 Al XO 23 A2 Xi 24 2-161 We 2589bbe O0148b0 Ic& CYPRESS Ordering Information Speed Package Operating (ns) Ordering Code Range CY7C185A20DMB Package Type 5 28-Lead (300-Mil) CerDIP Military CY7C185A~20LMB L54 28-Pin Rectangular Leadless Chip Carrier 25 CY7C185A25DMB D22 28-Lead (300-Mil) CerDIP Military CY7C185A25LMB L54 28-Pin Rectangular Leadless Chip Carrier 35 CY7C185A~35DMB D22 28-Lead (300-Mil) CerDIP Military CY7C185A-35LMB L54 28-Pin Rectangular Leadless Chip Carrier 45 CY7C185A-45DMB D22 28-Lead (300-Mil) CerDIP Military CY7C185A45LMB L354 28-Pin Rectangular Leadless Chip Carrier Shaded area contains advanced information. CY7C185A MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Switching Characteristics Parameter Subgroups Parameter Subgroups Vou 1,2,3 READ CYCLE VoL 1, 2,3 tre 7, 8,9, 10, 11 Vin 1, 2,3 taa 7, 8, 9, 10, 11 Vit Max. 1, 2,3 toHa 7, 8, 9, 10, 11 Ix 1, 2,3 tace1 7,8, 9,10, 11 loz 1,2,3 tace2 7, 8, 9, 10, 11 los 1,2,3 tpoE 7, 8, 9, 10, 11 Toc 1, 2,3 WRITE CYCLE Tspi 1,2,3 twe 7, 8, 9, 10, 11 Isp 1,2,3 tscE1 7, 8, 9, 10; 11 tscE2 7, 8,9, 10, 11 taw 7,8, 9, 10, 11 tHa 7, 8, 9, 10, 11 tsa 7, 8,9, 10, 11 tpwE 7, 8, 9, 10, 11 tsp 7, 8, 9, 10, 11 typ 7, 8, 9, 10, 11 Document #: 38-00114-B 2-162 WM 2546%bbe OO1L48b1 4659