GRP-DATA-JANS2N3866A - Semicoa Semiconductors

MIL-PRF-19500/398L

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12 July 2016

SUPERSEDING

MIL-PRF-19500/398L

5 June 2015

PERFORMANCE SPECIFICATION SHEET

TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY,

ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT) AND UNCAPSULATED, RADIATION HARDNESS

ASSURANCE, DEVICE TYPE 2N3866, QUALITY LEVELS: JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN silicon 2N3866 transistors for use in

VHF-UHF amplifier applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS,) are provided

for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance (JANHC and

JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA),

eight radiation levels is provided for quality levels JANTXV, JANS, JANHC, and JANKC. RHA level designators “M”,

“D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices which have passed RHA

requirements.

* 1.2 Package and die outlines. The device package for the encapsulated device types are as follows: TO-205AD,

formally TO-39, in accordance with figure 1 and surface mount in accordance with figure 2. The dimensions and

topography for JANHC and JANKC unencapsulated die are in accordance with figure 3.

1.3 Maximum ratings. Unless otherwise specified, TA = +25C.

Types

PT (1)

TA = (2)

TC = (3)

VCBO

VCEO

VEBO

TJ and

TSTG

RJC

RJA

W W V dc V dc V dc A dc C C/W C/W

2N3866 1.0 2.9 60 30 3.5 0.4 -65 to +200 60 175

2N3866UB 0.5 60 30 3.5 0.4 -65 to +200 325

(1) Derate linearly 5.71 mW/C (2N3866) and 3.08 mW/C (2N3866UB) above TA  +25C.

(2) TA = room ambient as defined in the general requirements of MIL-PRF-19500.

(3) PT = 2.9 W at TC = +25C, derate at 16.6 mW/C above TC > +25C.

AMSC N/A FSC 5961

INCH-POUND

Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:

VAC, P.O. Box 3990, Columbus, OH 43218-3990, or or emailed to Semiconductor@dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST

Online database at htt

s://assist.dla.mil.

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 12 October 2016.

MIL-PRF-19500/398L

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1.4 Primary electrical characteristics.

hFE (1)

hfe

VCE(SAT)

Cobo

Pout1

Pout2

CE = 5.0 V dc

IC = 50 mA dc

VCE = 15 V dc

IC = 50 mA dc

f = 200 MHz

IC = 100 mA dc

IB = 10 mA dc

VCB = 28 V dc

IE = 0

100 kHz  f  1 MHz

VCC = 28 V dc

Pin = 0.15 W

f = 400 MHz

VCC = 28 V dc

Pin = 0.075 W

f = 400 MHz

2N3866 2N3866A 2N3866 2N3866A V dc pF W W

Min 15 25 2.5 4.0 1.0 0.5

Max 200 200 8.0 7.5 1.0 3.5 2.0

(1) Pulsed (see 4.5.1).

1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500, and as specified herein.

See 6.5 for PIN construction example and 6.6 for a list of available PINs.

1.5.1 JAN brand and quality level designators.

1.5.1.1 Encapsulated devices. The quality level designators for encapsulated devices that are applicable for this

specification sheet from the lowest to the highest level are as follows: "JAN", "JANTX", "JANTXV", and "JANS".

1.5.1.2 Unencapsulated devices (die). The quality level designators for unencapsulated devices (die) that are

applicable for this specification sheet from the lowest to the highest level are as follows: "JANHC" and "JANKC".

1.5.2 Radiation hardness assurance (RHA) designator. The RHA levels that are applicable for this specification

sheet from lowest to highest are as follows: "M", "D", "P", "L", "R", "F", "G", and "H").

1.5.3 Device type. The designation system for the device types of transistors covered by this specification sheet

are as follows.

1.5.3.1 First number and first letter symbols. The transistors of this specification sheet use the first number and

letter symbols "2N".

1.5.3.2 Second number symbols. The second number symbols for the transistors covered by this specification

sheet are as follows: "3866".

1.5.4 Suffix symbols. The following suffix symbols are incorporated in the PIN as applicable.

1.5.4.1 First suffix symbol. The first suffix symbol "A" indicates that the transistor is a modified version of the

approved device type.

1.5.4.2 Following suffix symbols. The following suffix symbols are incorporated in the PIN for this specification

sheet:

A blank second suffix symbol indicates a through-hole mount package (see figure 1).

A Indicates a through-hole mount package (see figure 1).

UB Indicates a 4 pad surface mount package (see figure 2).

AUB Indicates a 4 pad surface mount package (see figure 2).

1.5.5 Lead finish. The lead finishes applicable to this specification sheet are listed on QPDSIS–19500.

1.5.6 Die identifiers for unencapsulated devices (manufacturers and critical interface identifiers). The

manufacturer die identifier that is applicable for this specification sheet is "A" (see figure 3 and 6.5).

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2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3 and 4 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 - Test Methods for Semiconductor Devices.

(Copies of these documents are available online at http://quicksearch.dla.mil.)

2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows:

: .............. (eta) Collector efficiency = rf power out x 100

dc power in

Pin: Input power

Pout: Output power

* 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and herein. The device package styles shall be as follows: Three pin metal can (TO-205AD,

formally TO-39) in accordance with figure 1, four pad surface mount case outline UB in accordance with figure 2, and

unencapsulated die in accordance with figure 3 for device types JANHC and JANKC.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

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3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements and test levels shall be as

defined in MIL-PRF-19500.

3.6 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics

are as specified in 1.3, 1.4, and table I herein.

3.7 Marking.

3.7.1 Through hole mount packages. Marking shall be in accordance with Error! Reference source not found..

3.7.2 Surface mount packages. Marking shall be in accordance with Error! Reference source not found.. The

marking on the UB package shall consist of an abbreviated part number, the date code, and the manufacturer’s

symbol and logo. The prefixes JAN, JANTX, JANTXV and JANS can be abbreviated as J, JX, JV, and JS

respectively. The “2N” prefix and the “UB” suffix can also be omitted. The radiation hardened designator shall

immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required).

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I and II).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with

MIL-PRF-19500.

4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

* 4.2.2.1 Group E thermal response. With extremely small junction devices such as this one, a true thermal

impedance cannot be measured, only calculated. While “thermal response” has been substituted for “thermal

impedance” herein, the terms, units, and procedures are essentially unchanged. Each supplier shall submit a thermal

response (ZθJX) histogram of the entire qualification lot. The histogram data shall be taken prior to the removal of

devices that are atypical for thermal response. Thermal response curves (from ZθJX test pulse time to RθJX minimum

steady-state time) of the best device in the qual lot and the worst device in the qual lot (that meets the supplier

proposed screening limit), or from the thermal grouping, shall be submitted. The optimal test conditions and proposed

initial thermal response screening limit shall be provided in the qualification report. Data indicating how the optimal

test conditions were derived for ZθJX shall also be submitted. The proposed maximum thermal response ZθJX

screening limit shall be submitted. The qualifying activity may approve a different ZθJX limit for conformance

inspection end-point measurements as applicable. Equivalent data, procedures, or statistical process control plans

may be used for part, or all, of the above requirements. The approved thermal response conditions and limit for ZθJX

shall be used by the supplier in screening and table I, subgroup 2. The approved thermal resistance conditions for

RθJX shall be used by the supplier for conformance inspection. For product families with similar thermal

characteristics based on the same physical and thermal die, package, and construction combination (thermal

grouping), the supplier may use the same thermal response curves.

MIL-PRF-19500/398L

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Dimensions

Symbol Inches Millimeters Note

Min Max Min Max

CD .305 .335 7.75 8.51 6

CH .240 .260 6.10 6.60

HD .335 .370 8.51 9.40

LC .200 TP 5.08 TP 7

LD .016 .021 0.41 0.53 8,9

LL .500 .750 12.7 19.05

LU .016 .019 0.41 0.48 8,9

L1 .050 1.27 8,9

L2 .250 6.35 8,9

P .100 2.54 7

Q .030 0.76 5

TL .029 .045 0.74 1.14 3,4

TW .028 .034 0.71 0.86 3

r .010 0.25 10

 45 TP 45 TP 7

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.

7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007

inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.

The device may be measured by direct methods or by gauging procedure.

8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter

is uncontrolled in and beyond LL minimum.

9. All three leads.

10. The collector shall be internally connected to the case.

11. Dimension r (radius) applies to both inside corners of tab.

12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.

13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

* FIGURE 1. Physical dimensions (TO-205AD, formally TO-39).

TO-39

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Ltr.

Dimensions

Note

Ltr.

Dimensions

Note

Inches Millimeters Inches Millimeters

Min Max Min Max Min Max Min Max

BH .046 .056 1.17 1.42 LS1 .035 .040 0.89 1.02

BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01

BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61

CL .128 3.25 r .008 0.20

CW .108 2.74 r1 .012 0.31

LL1 .022 .038 0.56 0.97 r2 .022 0.56

LL2 .017 .035 0.43 0.89

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Hatched areas on package denote metallized areas.

4. Lid material: Kovar.

5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.

6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.

FIGURE 2. Physical dimensions, surface mount (UB).

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Die size: .016 x .020 inch (0.41 x 0.51 mm).

Die thickness: .008 ±.0016 inch (0.20 ±0.041 mm).

Base pad: .0028 x .0028 inch (0.07 x 0.07 mm).

Emitter pad: .0028 x .0028 inch (0.07 x 0.07 mm).

Back metal: Gold, 6,500 ±1,950 Å.

Top metal: Aluminum, 17,500 ±2,500 Å.

Back side: Collector.

Glassivation: SiO2, 7,500 ±1,500 Å.

FIGURE 3. JANHC and JANKC (A-version) die dimensions.

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4.3 Screening.

4.3.1 Screening of packaged devices (quality levels JANS, JANTX and JANTXV only). Screening of packaged

devices shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following

measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall

not be acceptable.

Screen Measurement

JANS level JANTX and JANTXV levels

(1) 3c Thermal response, method 3131 of

MIL-STD-750 (see 4.3.3).

Thermal response, method 3131 of

MIL-STD-750 (see 4.3.3).

9 ICEO and hFE1 Not applicable.

11 ICEO and hFE1;

ICEO = 100 percent of initial value or

2 A dc, whichever is greater;

hFE1 = 20 percent of initial value.

ICEO and hFE1

12 See 4.3.1. See 4.3.1.

Subgroups 2 and 3 of table I herein.

ICEO = 100 percent of initial value or

2 A dc, whichever is greater;

hFE1 = 20 percent of initial value.

Subgroup 2 of table I herein.

ICEO = 100 percent of initial value or

2 A dc, whichever is greater;

hFE1 = 20 percent of initial value.

(1) Shall be performed anytime after temperature cycling, screen 3a; TX and TXV levels do not need to be

repeated in screening requirements.

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: TA = room ambient as defined in the

general requirements of MIL-STD-750; VCB = 10 to 30 V dc. Power shall be applied to achieve a junction temperature

TJ = +135C minimum and power dissipation of PT  75 percent of max rated PT as defined in 1.3 herein. With

approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and

mounting conditions) may be used for JANTX and JANTXV. A justification demonstrating equivalence is required. In

addition, the manufacturing site’s burn-in data and performance history will be essential criteria for burn-in

modification approval.

4.3.3 Screening of unencapsulated die (JANHC and JANKC). Screening of JANHC and JANKC die shall be in

accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the

JANKC level follows JANS requirements; the JANHC follows JANTX requirements.

4.3.4 Thermal response, (VBE measurements). The VBE measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining VH, VCE, IM, IH, tH, and tMD. The

VBE limit used in screen 3c of 4.3 herein and table I, subgroup 2 shall be set statistically by the supplier over several

die lots and submitted to the qualifying activity for approval.

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4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I

herein.

4.4.2 Group B inspection.

4.4.2.1 Quality level JANS, table E-VIa of MIL-PRF-19500. Group B inspection shall be conducted in accordance

with the tests and conditions specified for subgroup testing in E-VIa (JANS) of MIL-PRF-19500.

Subgroup Method Conditions

B4 1037 VCB = 10 V dc; 2,000 cycles, adjust power or current to achieve a ∆TJ = +100°C.

B5 1027 VCB = 10 V dc; PD  100 percent of maximum rated PT (see 1.3). (NOTE: If a

failure occurs, resubmission shall be at the test conditions of the original sample.)

Option 1: 96 hours minimum sample size in accordance with table E-VIa of

MIL-PRF-19500, adjust TA or PD to achieve TJ = +275C minimum.

Option 2: 216 hours minimum, sample size = 45, c = 0; adjusted TA or PD to

achieve a TJ = +225C minimum.

4.4.2.2 Quality level (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Separate samples may be used for each

step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all

catastrophic failures during CI (conformance inspection) shall be analyzed to the extent possible to identify root cause

and corrective action. Whenever a failure is identified as wafer lot and/or wafer processing related, the entire wafer

lot and related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective

action to eliminate the failure mode has been implemented and the devices from the wafer lot are screened to

eliminate the failure mode. Endpoints shall be after each step and shall be in accordance with MIL-PRF-19500.

Step Method Conditions

1 1026 Steady-state life: 1,000 hours, VCB = 10 to 30 V dc; power shall be applied to achieve

TJ = +150C minimum and a power dissipation of PD  75 percent of max rated PT as defined

in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time decreased

as long as the devices are stressed for a total of 45,000 device hours minimum, and the

actual time of test is at least 340 hours.

2 1048 Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.

n = 45 devices, c = 0.

3 1032 High-temperature life (non-operating), t = 340 hours; TA = +200C. n = 22, c = 0.

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements.

a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from

each wafer in the lot) from each wafer lot. For JANS samples shall be selected from each inspection lot.

See MIL-PRF-19500.

b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and

JANTXV) may be pulled prior to the application of final lead finish.

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* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and

JANTXV) herein for group C testing. Electrical measurements (end-points) in accordance with MIL-PRF-19500.

4.4.3.1 Quality level JANS, table E-VII of MIL-PRF-19500.

Subgroup Method Conditions

C2 2036 Test condition E (not applicable to UB suffix devices).

C5 3131 See 4.5.2; n = 22, c =0.

C6 1026 1,000 hours, VCB = 10 V dc; power shall be applied to achieve TJ = +150C

minimum and a power dissipation of PD  75 percent of max rated PT as defined

in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test

time decreased as long as the devices are stressed for a total of 45,000 device

hours minimum, and the actual time of test is at least 340 hours.

4.4.3.2 Quality levels JAN, JANTX, and JANTXV, table E-VII of MIL-PRF-19500.

Subgroup Method Conditions

C2 2036 Test condition E (not applicable to UB suffix devices).

C6 Not applicable.

C8 3005 Pre-pulse condition VCE = 0, IC = 0; pulse condition IC = 400 mA dc, tP = 60 s,

1 cycle; tr  6s, tf  6s. Sample size, n = 22, c = 0 (see 4.5.4).

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any

inspection lot containing the intended package type and lead finish procured to the same specification which is

submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type

enclosed in the intended package type shall be considered as complying with the requirements for that subgroup.

4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750 for total ionizing dose, or method 1017 of MIL-STD-750 for

neutron fluence, as applicable (see 6.2.e herein), except group D, subgroup 2 may be performed separate from other

subgroups. Group D inspection may also be performed ahead of the screening lot using die selected in accordance

with MIL-PRF-19500 and related documents. Alternate package options may also be substituted for the testing

provided there is no adverse effect to the fluence profile.

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Delta requirements shall be in

accordance with table I, subgroup 2 herein.

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4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in MIL-STD-750.

4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method

3131 of MIL-STD-750. The following details shall apply:

a. Collector current magnitude during power application shall be 79 mA dc minimum.

b. Collector to emitter voltage magnitude shall be 20 V dc minimum.

c. Reference temperature measuring point shall be the case.

d. Reference point temperature shall be +25C  TR  +75C and recorded before the test is started.

e. Mounting arrangement shall be with heat sink to case.

f. Maximum limit of RJC shall be 60C/W for 2N3866, 2N3866A; RJA shall be 325°C/W for 2N3866UB and

2N3866AUB.

4.5.3 Power output and collector efficiency measurements. The device shall be tested in the circuit of figure 4

using the procedure outlined on figure 5. The specified conditions shall be applied and the variable capacitors

adjusted to obtain maximum power output. When the maximum power output is obtained, the collector current shall

be measured and recorded. The collector efficiency shall be computed as follows:

 in percent = PO (watts) x 100

28 x IC (amperes)

4.5.4 Burn-out by pulsing. The devices shall be tested in the circuit of figure 6. The voltage source shall be

increased from zero until the specified current is reached. The current shall be maintained for the specified time.

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TABLE I. Group A inspection.

Inspection 1/ MIL-STD-750 Symbol Limits Unit

Method Conditions Min Max

Subgroup 1 2/

Visual and mechanical

examination 3/

2071 n = 45 devices, c = 0 (JAN and JANTX)

n = 116 devices, c = 0 (JANTXV)

n = 15 devices, c = 0 (JANS)

Solderability 3/ 4/

2026 n = 15 leads, c = 0

Resistance to solvents

3/ 4/ 5/

1022 n = 15 devices, c = 0

Salt Atmosphere

(Laser marked devices

only)

1041

n = 6 devices, c = 0

Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles.

n = 22 devices, c = 0

Hermetic seal 4/

Fine leak

Gross leak

1071

n = 22 devices, c = 0

Electrical

measurements 4/

Table I, subgroup 2

Bond strength 3/ 4/

2037

Precondition TA = +250C at t = 24 hrs

or TA = +300C at t = 2 hrs,

n = 11 wires, c = 0

Subgroup 2

Thermal response 6/ 3131 See 4.3.3. ∆VBE mV

Collector-emitter

breakdown voltage

3011

Bias condition D; IC = 5 mA dc; pulsed

(see 4.5.1)

V(BR)CEO

V dc

Collector-base

breakdown voltage

3001

Bias condition D; IC = 100 A dc; pulsed

(see 4.5.1)

V(BR)CBO

V dc

Emitter-base

breakdown voltage

3026

Bias condition D; IE = 100 A dc; pulsed

(see 4.5.1)

V(BR)EBO

3.5

V dc

Collector-emitter cutoff

current

3041

Bias condition D; VCE = 28 V dc

ICEO

A dc

Collector-emitter cutoff

current

3041

Bias condition C; VCE = 55 V dc

ICES1

100

A dc

See footnotes at end of table.

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TABLE I. Group A inspection - Continued.

Inspection 1/ MIL-STD-750 Symbol Limits Unit

Method Conditions Min Max

Subgroup 2 - Continued

Forward-current

transfer ratio

3076 VCE = 5.0 V dc; IC = 50 mA dc;

pulsed (see 4.5.1)

hFE1

2N3866, 2N3866UB 15 200

2N3866A, 2N3866AUB

25 200

Forward-current

transfer ratio

3076 VCE = 5.0 V dc; IC = 360 mA dc;

pulsed (see 4.5.1)

hFE2

2N3866, 2N3866UB 5.0

2N3866A, 2N3866AUB

8.0

Collector-emitter

saturated voltage

3071 IC = 100 mA dc; IB = 10 mA dc;

pulsed (see 4.5.1)

VCE(sat) 1.0 V dc

Subgroup 3

High temperature operation

TA = +150C

Collector to emitter

cutoff current

3041 Bias condition C; VCE = 55 V dc ICES2 2.0 mA

Low temperature operation

TA = -55C

Forward-current

transfer ratio

3076 VCE = 5.0 V dc; IC = 50 mA dc;

pulsed (see 4.5.1)

hFE3

2N3866, 2N3866UB 7

2N3866A, 2N3866AUB

Subgroup 4

Magnitude of small-signal

short-circuit current transfer

ratio

3306 VCE = 15 V dc; IC = 50 mA dc;

f = 200 MHz

hfe

2N3866, 2N3866UB 2.5 8.0

2N3866A, 2N3866AUB

4.0 7.5

Open circuit

output capacitance

3236 VCB = 28 V dc; IE = 0,

100 kHz  f  1 MHz

Cobo 3.5 pF

Power output VCC = 28 V dc; Pin = 0.15 W;

f = 400 MHz (see figure 4 and 4.5.3)

P1out 1.0 2.0 W

Power output VCC = 28 V dc; Pin = 0.075 W;

f = 400 MHz (see figure 4 and 4.5.3)

P2out 0.5 W

See footnotes at end of table.

MIL-PRF-19500/398L

w/AMENDMENT 1

TABLE I. Group A inspection - Continued.

Inspection 1/ MIL-STD-750 Symbol Limits Unit

Method Conditions Min Max

Collector-efficiency VCC = 28 V dc; Pin = 0.15 W;

f = 400 MHz (see 4.5.3)



1 45 %

Collector-efficiency VCC = 28 V dc; Pin = 0.075 W;

f = 400 MHz (see 4.5.3)



2 40 %

Subgroups 5 and 6

Not applicable

Subgroup 7

Collector-emitter

breakdown voltage

(clamped inductive)

3011 VBE = -1.5 V dc; IC = 40 mA dc

(see figure 7)

V(BR)CEX 55 V dc

1/ For sampling plan see MIL-PRF-19500.

2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure

in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon

submission.

3/ Separate samples may be used.

4/ Not required for JANS devices.

5/ Not required for laser marked devices.

6/ This test required for the following end-point measurements only:

Group B, subgroups 3, 4, and 5 (JANS).

Group B, steps 2 and 3 (JAN, JANTX, and JANTXV).

Group C, subgroups 2 and 6.

Group E, subgroups 1 and 2.

MIL-PRF-19500/398L

w/AMENDMENT 1

TABLE II. Group D inspection and end-point limits.

Inspection 1/ 2/ 3/ MIL-STD-750 Symbol Limits Unit

Method Conditions Min Max

Subgroup 1 4/

Neutron irradiation

1017 Neutron exposure VCES = 0 V

Collector-emitter

breakdown voltage

3011 Bias condition D; IC = 5 mA dc;

pulsed (see 4.5.1)

V(BR)CEO 30 V dc

Collector-base

breakdown voltage

3001 Bias condition D; IC = 100 µA dc;

pulsed (see 4.5.1)

V(BR)CBO 60 V dc

Emitter-base

breakdown voltage

3026 Bias condition D; IE = 100 µA dc;

pulsed (see 4.5.1)

V(BR)EBO 3.5 V dc

Collector-emitter

cutoff current

3041 Bias condition D; VCB = 28 V dc ICEO 40 µA dc

Collector-emitter

cutoff current

3041 Bias condition C; VCE = 55 V dc ICES1 200 µA dc

Forward-current transfer ratio 3076 VCE = 5 V dc, IC = 50 mA dc;

pulsed (see 4.5.1)

hFE1 5/

2N3866, 2N3866UB [7.5] 200

2N3866A, 2N3866AUB

[12.5] 200

Forward-current transfer ratio 3076 VCE = 5 V dc, IC = 360 mA dc;

pulsed (see 4.5.1)

hFE2 5/

2N3866, 2N3866UB

2N3866A, 2N3866AUB

[2.5]

[4.0]

Collector-emitter

saturated voltage

3071 IC = 100 mA dc, IB = 10 mA dc,

pulsed (see 4.5.1)

VCE(sat) 1.15 V dc

See footnotes at end of table.

MIL-PRF-19500/398L

w/AMENDMENT 1

TABLE II. Group D inspection and end-point limits - Continued.

Inspection 1/ 2/ 3/ MIL-STD-750 Symbol Limits Unit

Method Conditions Min Max

Subgroup 2

Steady-state total dose

irradiation

1019 Gamma exposure VECS = 24 V

Collector-emitter

breakdown voltage

3011 Bias condition D; IC = 5 mA dc;

pulsed (see 4.5.1)

V(BR)CEO 30 V dc

Collector-base

breakdown voltage

3001 Bias condition D; IC = 100 µA dc;

pulsed (see 4.5.1)

V(BR)CBO 60 V dc

Emitter-base

breakdown voltage

3026 Bias condition D; IE = 100 µA dc;

pulsed (see 4.5.1)

V(BR)EBO 3.5 V dc

Collector-emitter

cutoff current

3041 Bias condition D; VCB = 28 V dc ICEO 40 µA dc

Collector-emitter

cutoff current

3041 Bias condition C; VCE = 55 V dc ICES1 200 µA dc

Forward-current transfer ratio

3076 VCE = 5 V dc, IC = 50 mA dc;

pulsed (see 4.5.1)

hFE1 5/

2N3866, 2N3866UB [7.5] 200

2N3866A, 2N3866AUB

[12.5] 200

Forward-current transfer ratio

3076 VCE = 5 V dc, IC = 360 mA dc

pulsed (see 4.5.1)

hFE2 5/

2N3866, 2N3866UB [2.5]

2N3866A, 2N3866AUB

[4.0]

Collector-emitter

saturated voltage

3071 IC = 100 mA dc, IB = 10 mA dc,

pulsed (see 4.5.1)

VCE(sat) 1.15 V dc

1/ Tests to be performed on all devices receiving radiation exposure.

2/ For sampling plan, see MIL-PRF-19500.

3/ Electrical characteristics apply to the corresponding AL, UA, UB, and UBC suffix versions unless otherwise noted.

4/ See 6.2.e herein.

5/ See method 1019 of MIL-STD-750, for how to determine [hFE] by first calculating the delta (1/hFE) from the

pre- and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE]

value can never exceed the pre-radiation minimum hFE that it is based upon.

MIL-PRF-19500/398L

w/AMENDMENT 1

TABLE III. Group E inspection (all quality levels) – for qualification or re-qualification only.

Inspection MIL-STD-750 Qualification

Method Conditions

Subgroup 1

45 devices

c = 0

Temperature cycling

(air to air)

1051 Test condition C, 500 cycles.

Hermetic seal

Fine leak

Gross leak

1071

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 2

45 devices

c = 0

Intermittent life 1037 VCB = 10 V dc, 6,000 cycles, adjust power or current to

achieve a ∆TJ = +100°C.

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 4

Sample size

N/A

Thermal response curves

See 4.2.2.1

Subgroup 5

Not applicable

Subgroup 6

ESD 1020

Subgroup 8

45 devices

c = 0

Reverse stability 1033 Condition B

MIL-PRF-19500/398L

w/AMENDMENT 1

C1, C2, C5 = 3 - 35 pF.

C3 = 24 pF (see note).

C4 = 0.4 - 7 pF.

L1 = Straight piece number 16 bare tin wire, .625 inch (15.87 mm) long.

L2 = 3 turns number 16 wire, .250 inch (6.35 mm) ID, .312 inch (7.92 mm) long.

L3 = 1 turns number 18 wire, .250 inch (6.35 mm) ID, .022 inch (0.56 mm) long.

L4 = Ferrite RF choke, Z = 450 .

NOTE: For optimum performance, C3 should be mounted as close as possible to base lead.

FIGURE 4. Power output test circuit (400 MHz).

MIL-PRF-19500/398L

w/AMENDMENT 1

NOTES:

1. Test fixture is the circuit as described on figure 4.

2. RF power source may be any unit capable of generating desired power level at desired frequency with a

harmonic and spurious content at least 20 dB below operating frequency level.

3. The RF isolator may be any device (pad, circulator, ect.) capable of establishing at least 20 dB of isolation

(RL > 20 dB) between RF source and test fixture.

4. Variable attenuators (or fixed if calibrated): Attenuator on directional coupler number 2 shall be calculated

against known working standard either by means of calibration chart or suitable adjustment if variable.

Attenuator at position "A" of directional coupler number 1 shall be calibrated or adjusted so that actual

power at test fixture is known. Attenuator at position "B" shall be adjusted to establish sensitivity needed to

measure VSWR.

5. RF switch may be eliminated if additional power meters are used.

PROCEDURE:

a. Remove "test fixture" and install jumper between directional coupler number 1 and directional coupler

number 2.

b. Set the RF switch to power output position "C".

c. Adjust frequency and power of RF source, as required by specification, and monitor frequency

counter and RF power meter respectively (see note 4).

d. Set the RF switch to position "A" and adjust variable attenuator to obtain identical reading as power

out in position "C" (see note 4).

e. Reconnect "test fixture" in test setup and insert device.

f. Adjust power supply to 28 V dc.

g. Adjust circuit output tuning for maximum power gain and circuit input tuning for maximum VSWR. (Switch

between power in; VSWR, and power out while tuning and repeat as many times as necessary to obtain

minimum VSWR and maximum power out. Check power in level before taking final reading. Minimum

VSWR is defined as minimum reading obtained on power meter with switch in position "B" and maintaining

power in.)

FIGURE 5. RF power output (POUT) test procedure.

MIL-PRF-19500/398L

w/AMENDMENT 1

FIGURE 6. Burn-out by pulsing test circuit.

MIL-PRF-19500/398L

w/AMENDMENT 1

RBB1 = 150 .

VBB1 = 20 V dc.

K = s.p.s.t relay, 6 V ac coil (Clare Mercury Relay, model number HGP-1400, or equivalent).

RBB2 = 33 .

VBB2 = 1.5 V dc.

RS = 1  1 percent, .5 watt (non-inductive).

VCC = The voltage should be adjusted to approximately 17 volts.

L = 25 mH, 100 mA, 83  resistive (Miller number 957, or equivalent).

Vclamp = 55 V (min).

V(BR)CEX clamped at 10 percent over rating.

FIGURE 7. VBR(CEX) (clamped inductive) test circuit.

MIL-PRF-19500/398L

w/AMENDMENT 1

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order

(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel

need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are

maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or

within the Military Service’s system commands. Packaging data retrieval is available from the managing Military

Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible

packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.

The notes specified in MIL-PRF-19500 are applicable to this specification.)

6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design

applications and logistic support of existing equipment.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of this specification.

b. Packaging requirements (see 5.1).

c. Lead finish (see 3.4.1).

d. The complete PIN (see 1.5 and 6.5).

e. For acquisition of RHA designed devices, table II, subgroup 1 testing of group D is optional. If subgroup 1

testing is desired, it should be specified in the contract.

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,

at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not

such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from

DLA Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An

online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at

https://assist.dla.mil.

6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter

version (example JANHCA2N3866) will be identified on the QML.

Die ordering information (1)

PIN Manufacturer

34156

2N3866

JANHCA2N3866

2N3866A JANHCA2N3866A

(1) For JANKC level, replace JANHC with JANKC.

MIL-PRF-19500/398L

w/AMENDMENT 1

6.5 PIN construction examples.

6.5.1 Encapsulated devices. The PIN for encapsulated devices are constructed using the following form:

JANTXV M 2N 3866 A

JAN brand and quality level (see 1.5.1)

RHA designator, if applicable (see 1.5.2)

First number and first letter symbols (see 1.5.3.1)

Second number symbols (see 1.5.3.2)

Suffix letters (see 1.5.4)

6.5.2 Un-encapsulated devices. The PINs for un-encapsulated devices are constructed using the following form.

JANHC M 2N 3866 A

JAN brand and quality level (see 1.5.1)

RHA designator, if applicable (see 1.5.2)

First number and first letter symbols (see 1.5.3.1)

Second number symbols (see 1.5.3.2)

Suffix letters (see 1.5.4)

6.6 List of PINs.

6.6.1 Encapsulated devices. The following is a list of possible PINs available for encapsulated devices covered by

this specification sheet.

PINs for devices of the PINs for devices of the PINs for devices of the PINs for devices of the

base quality level “TX” quality level “TXV” quality level “S” quality level

JAN2N3866 JANTX2N3866 JANTXV2N3866 JANS2N3866

JAN2N3866A JANTX2N3866A JANTXV2N3866A JANS2N3866A

JAN2N3866UB JANTX2N3866UB JANTXV2N3866UB JANS2N3866UB

JAN2N3866AUB JANTX2N3866AUB JANTXV2N3866AUB JANS2N3866AUB

PINs for devices of the “TXV” PINs for devices of the “S”

quality level with RHA (1) quality level with RHA (1)

JANTXV2N3866 JANS#2N3866

JANTXV2N3866A JANS#2N3866A

JANTXV2N3866UB JANS#2N3866UB

JANTXV2N3866AUB JANS#2N3866AUB

(1) The number sign (#) represents one of eight RHA designators available (“M”, “D”, “P”, “L”, “R”, “F”, “G”, or “H”).

MIL-PRF-19500/398L

w/AMENDMENT 1

6.6.2 Unencapsulated devices. The following is a list of possible PINs available for unencapsulated devices

covered by this specification sheet.

JANHCA#2N3866

JANKCA#2N3866

(1) The number sign (#) represents one of eight RHA designators available (“M”, “D”, “P”, “L”, “R”, “F”, “G”, or “H”).

6.7 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - EC

Air Force - 85 (Project 5961-2016-055)

NASA - NA

DLA - CC

Review activities:

Army - AR, MI, SM

Navy - AS

Air Force - 19, 99

NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and responsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at https://assist.dla.mil.