RTF015P02
Transistors
1/4
DC-DC Converter (−20V, −1.5A)
RTF015P02
zFeatures
1) Low on-resistance. (80mΩ at 2.5V)
2) High power package.
3) High speed switching.
4) Low voltage drive. (2.5V)
zApplications
DC-DC converter
zExternal dimensions (Unit : mm)
TUMT3
Abbreviated symbol : WV
Each lead has same dimensions
2.0±0.1
0.85MAX
0.2MAX
0.77±0.05
0.17±0.05
2.1±0.1
1.7±0.1 0.20.2
0.65
1.3±0.1
0.65
+0.1
−0.05
0.3
(1)
(3)
(2)
0 to 0.1
zStructure
Silicon P-channel
MOS FET
zPackaging specifications
Package
Code Taping
Basic ordering unit (pieces)
RTF015P02
TL
3000
Type
zEquiva lent circuit
(1) Gate
(2) Source
(3) Drain
∗2
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
(2)
(1)
(3)
RTF015P02
Transistors
2/4
zA bsolute maximum ratings (Ta=25°C)
∗1
∗2
∗1
Parameter VV
DSS
Symbol
VV
GSS
AI
D
AI
DP
AI
S
AI
SP
WP
D
°CTch °CTstg
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Source current
(Body diode)
−20
150
−55 to +150
±12
±1.5
±6
−0.6
−6
0.8
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−Typ. Max. Unit Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Body diode characteristics (source-drain characteristics)
VSD −−−1.2 V I
S
= −0.6A, V
GS
=0VForward voltage
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−±10 µAV
GS
=±12V, V
DS
=0V
V
DD
−15V
−20 −−VI
D
= −1mA, V
GS
=0V
−−−1µAV
DS
= −20V, V
GS
=0V
−0.7 −−2.0 V V
DS
= −10V, I
D
= −1mA
−100 135 I
D
= −1.5A, V
GS
= −4.5V
−110 150 mΩ
mΩ
mΩI
D
= −1.5A, V
GS
= −4V
−180 250 I
D
= −1.5A, V
GS
= −2.5V
1.5 −−SV
DS
= −10V, I
D
= −0.8A
−560 −pF V
DS
= −10V
−90
55 −pF V
GS
=0V
−12 −pF f=1MHz
−12 −ns
−38 −ns
−12 −ns
−5.2 −ns
−1.3 −nC
−1.4 −nC V
GS
=
−4.5V R
L
10Ω
R
GS
=10Ω
−−nC I
D
=
−1.5A
V
DD
−15V
I
D
= −0.8A
V
GS
= −4.5V
R
L
=9Ω
R
GS
=10Ω
RTF015P02
Transistors
3/4
zElectrical characteristic curv es
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
GATE-SOURCE VOLTAGE : −V
GS
(V)
0.001
0.01
0.1
1
10
DRAIN CURRENT : −I
D
(A)
Fig.1
Typical Transfer Characteristics
V
DS
= −10V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1 1 10
DRAIN CURRENT : −I
D
(A)
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
Ta=25°C
Pulsed
VGS= −4.5V
VGS= −4.0V
VGS= −2.5V
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
DRAIN CURRENT : −I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
0.1 1 10
10
100
1000
V
GS
=
−
4.5V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1 1 10
10
100
1000
DRAIN CURRENT : −I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
V
GS
=
−
4V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1 1 10
10
100
1000
DRAIN CURRENT : −ID (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
V
GS
=
−
2.5V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
SOURCE-DRAIN VOLTAGE : −V
SD
(V)
0.01
0.1
1
10
REVERSE DRAIN CURRENT : −I
S
(A)
V
GS
=0V
Pulsed
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
10000
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : −V
DS
(V)
CAPACITANCE : C (pF)
Ta=25°C
f=1MHz
V
GS
=0V
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
Ciss
Coss
Crss
0.01 0.1 1 10
DRAIN CURRENT : −I
D
(A)
1
10
SWITCHING TIME : t (ns)
1000
10000
100
Fig.8 Switching Characteristics
t
d (off)
t
d (on)
t
r
t
f
Ta=25°C
V
DD
= −15V
V
GS
= −4.5A
R
G
=10Ω
Pulsed
Ta=25°C
V
DD
= −15V
I
D
= −1.5A
R
G
=10Ω
Pulsed
012345678
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : −V
GS
(V)
Fig.9
Dynamic Input Characteristics
RTF015P02
Transistors
4/4
zMeasurement circuits
Fig.10 Switching Time Measurement Circuit
VGS
RG
VDS
D.U.T.
ID
RL
VDD
Fig.11 Switching Waveforms
90%
90% 90%
10% 10%
10%
50% 50%
Pulse Width
V
GS
VDS
ton toff
tr
td(on) tf
td(off)
Fig.12 Gate Charge Measurement Circuit
V
GS
I
G(Const.)
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.13 Gate Charge Waveforms
VG
VGS
Charge
Qg
Qgs Qgd
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
