Photocoupler
FEATURES
• TTL Compatible Output
• Collector-Emitter Voltage : Min.50V
• Current Transfer Ratio : Typ.100% (at IF=5mA, VCE=5V)
• Electrical Isolation Voltage : AC5000Vrms
• UL Recognized File No. E107486
• K4N25G - No Base Connection,
K4N25H - With Base Connection
APPLICATIONS
• Interface between two circuits of different potential
• Vending Machine, Copiers
• Measuring Instrument
• Home Appliances
MAXIMUM RATINGS (Ta=25℃ )
**
Except for K4N25G
*1. Input current with 100㎲ pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
K4N25G • K4N25H
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting
Diode and a Silicon NPN Phototransistor in a 6-pin package.
Emitter-Base Breakdown Voltage**
Lead Soldering Temperature*3
Tsol 260 ℃
Operating Temperature Topr -30~+100 ℃
BVEBO 6
Storage Temperature Tstg -55~+125 ℃
Input to Output Isolation Voltage*2 Viso AC5000 Vrms
Collector Power Dissipation PC150 mW
V
V
V
Collector Current IC50 mA
V
Output
Collector-Emitter Breakdown Voltage BVCEO 50
Emitter-Collector Breakdown Voltage BVECO 6
Collector-Base Breakdown Voltage** BVCBO 80
mA
V
A
Power Dissipation PD70 mW
Reverse Voltage VR 5
Peak Forward Current *1 IFP 1
Parameter Symbol Rating Unit
Input
Forward Current IF50
Total Power Dissipation Ptot 200 mW
DIMENSION (Unit : mm)
1/3
6.4 0.25
8.9 0.25
2.54 0.25
123
1.2
0.5
3.8 0.25
2.7Min.
0.51Min.
7.62 0.25
6.4
0.25
0-15
654
Orientation Mark
3
654
4
5
6
12
12
3
PIN NO. AND INIERNAL
CONNECION DIAGRAM
K4N25G
K4N25H
Photocoupler
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25℃ , unless otherwise noted)
IF=10mA
VR=5V
V=0, f=1MHz
IC=0.5mA
IE=0.1mA
IC=0.1mA
IE=0.1mA
IF=0, VCE=10V
VCE=0, f=1MHz
IF=5mA, IC=1mA
V=0, f=1MHz
VCC=10V, RL=100Ω
IC=2mA
** Except for K4N25G
*4. CTR=(IC/IF) X 100 (%)
VBVEBO 6- -
CTR IF=5mA, VCE=5V
RH=40~60%, V=500V
BVCEO
VCE(SAT)
BVECO
BVCBO
Coupled
Rise Time
Fall Time
Condition
tf
CT
-
30
50
3
1011
-
-
10-
Typ.
1.15 V
K4N25G • K4N25H
Parameter Min.
-
Unit.
pF
㎲
-
-0.4
-
- Ω
3-
Max.
1.30
-
-
Symbol
VF
-
tr -RIO
-
1
-
50
600
㎲
-
-
-
pF
%
V
pF
V
V
V80
--
-
6
Input
Output
Forward Voltage
Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Emitter-Base Breakdown Voltage **
CCE
CIO
Collector-Base Breakdown Voltage **
Input-Output Isolation Resistance
Input-Output Capacitance
Capacitance
Current Transfer Ratio*4
Collector-Emitter Saturation Voltage
IR- - 10 mA
Collector Dark Current ICEO - - 100 nA
Reverse Current
2/3
Photocoupler
K4N25G • K4N25H
3/3
Ambient Temperature Ta (℃)
Forward Current vs.
Ambient Temperature
0
-20 0 20
Forward Current IF (mA)
10
20
40
30
50
40 60 100
0.1 0.1
Load Resistance RL (㏀)
1 10
Response Time vs.
Load Resistance
Response Time tr, tf ( s)
10
100
80
Dark Current ICEO (㎂)
Ambient Temperature Ta (℃)
0
0.001
0.01
4020
0.1
1
8060 100
Dark Current vs.
Ambient Temperature
Collector Power Dissipation vs.
Ambient Temperature
Collector Power Dissipation PC
(mW)
-20
0
50
100
150
200
250
Ambient Temperature Ta (℃)
200 6040 10080
Output
Input
Test Circuit
VIN R
RL
VO
VCC
Waveform
10%
90%
Switching Time Test Circuit
trtf
1
500
VCE=24V
VCE=10V
tr tf
VCE=5V
IC=2mA
Ta=25℃
Forward Voltage VF (V)
20
00.4
100
120
140
60
40
80
Forward Current IF (mA)
1.20.8 1.6
Ta=70℃
Ta=25℃
Ta=-55℃
Forward Current vs.
Forward Voltage
2.0
IF=20mA
Collector Current vs.
Ambient Temperature
IF=1mA
Ambient Temperature Ta (℃)
-20
00 4020 60
100
10
Collector Current IC (mA)
1
IF=5mA
IF=10mA
80
Ta=25℃
VCC=10V
Collector Current IC (mA)
Forward Current IF (mA)
0.1
0.001 1
0.01
0.1
1
10
10 100
Collector Current vs.
Forward Current
100
Ta=25℃
Collector Current vs.
Collector-Emitter Voltage
10
Collector current IC (mA)
0
30
20
40
Collector-Emitter voltage VCE (V)
2 4 6 10
IF=1mA
8
IF=20mA
IF=30mA
IF=10mA
IF=5mA
PC(MAX.)
