SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906ACSM * Low Power * Hermetic Ceramic Surface Mount Package. * Ideally suited for High Speed Switching and General Purpose Applications * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current TA = 25C Total Power Dissipation at Derate Above 25C TC = 25C Total Power Dissipation at -60V -60V -5V -600mA 400mW 2.28mW/C 1.8W 10.3mW/C -65 to +200C -65 to +200C Derate Above 25C TJ Tstg Junction Temperature Range Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RJA RJC Min. Typ. Max. Units Thermal Resistance, Junction To Ambient 437.5 C/W Thermal Resistance, Junction To Case 97.2 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8079 Issue 1 Page 1 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906ACSM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO(1) IC = -10mA IB = 0 -60 IC = -10A IE = 0 -60 V(BR)EBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage IE = -10A IC = 0 -5 ICEX Collector Cut-Off Current VCE = -30V VBE = -0.5V ICBO Collector Cut-Off Current VCB = -50V IE = 0 V(BR)CBO VCE(sat) VBE(sat) hFE (1) (1) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward-current transfer ratio Min. Typ Max. Units V -50 -0.01 TA = 150C -10 IC = -150mA IB = -15mA -0.4 IC = -500mA IB = -50mA -1.6 IC = -150mA IB = -15mA -1.3 IC = -500mA IB = -50mA -2.6 IC = -0.1mA VCE = -10V 40 IC = -1.0mA VCE = -10V 40 IC = -10mA VCE = -10V 40 IC = -150mA VCE = -10V 40 IC = -500mA VCE = -10V 40 IC = -50mA VCE = -20V nA A V 120 DYNAMIC CHARACTERISTICS fT Transition Frequency Cobo Output Capacitance Cibo Input Capacitance ton Turn-On Time toff 170 MHz f = 100MHz Turn-Off Time VCB = -10V IE = 0 8 f = 1.0MHz VEB = -2V pF IC = 0 30 f = 1.0MHz IC = -150mA VCC = -30V IB1 = -15mA IC = -150mA VCC = -30V IB1 = - IB2 = -15mA 45 ns 300 Notes (1) Pulse Width 300us, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8079 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906ACSM MECHANICAL DATA Dimensions in mm (inches) 0.31 rad. (0.012) 3 2 0.76 0.15 (0.03 0.006) 2.54 0.13 (0.10 0.005) 0.51 0.10 (0.02 0.004) 1 1.91 0.10 (0.075 0.004) 0.31 rad. (0.012) 3.05 0.13 (0.12 0.005) A= 1.02 0.10 (0.04 0.004) A 1.40 (0.055) max. LCC1 Underside View Pad 1 - Base Pad 2 - Emitter Pad 3 - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8079 Issue 1 Page 3 of 3