SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8079
Issue 1
Page 1 of 3
2N2906ACSM
• Low Power
• Hermetic Ceramic Surface Mount Package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO Collector – Base Voltage -60V
VCEO Collector – Emitter Voltage -60V
VEBO Emitter – Base Voltage -5V
IC Continuous Collector Current -600mA
PD Total Power Dissipation at TA = 25°C 400mW
Derate Above 25°C 2.28mW/°C
PD Total Power Dissipation at TC = 25°C 1.8W
Derate Above 25°C 10.3mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJA Thermal Resistance, Junction To Ambient 437.5 °C/W
RθJC Thermal Resistance, Junction To Case 97.2 °C/W
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2906ACSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8079
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO(1) Collector-Emitter
Breakdown Voltage IC = -10mA IB = 0 -60
V(BR)CBO Collector-Base
Breakdown Voltage IC = -10µA IE = 0 -60
V(BR)EBO Emitter-Base Breakdown
Voltage IE = -10µA IC = 0 -5
V
ICEX Collector Cut-Off Current VCE = -30V VBE = -0.5V -50 nA
VCB = -50V IE = 0 -0.01
ICBO Collector Cut-Off Current
TA = 150°C -10
µA
IC = -150mA IB = -15mA -0.4
VCE(sat)(1) Collector-Emitter Saturation
Voltage IC = -500mA IB = -50mA -1.6
IC = -150mA IB = -15mA -1.3
VBE(sat)(1) Base-Emitter Saturation
Voltage IC = -500mA IB = -50mA -2.6
V
IC = -0.1mA VCE = -10V 40
IC = -1.0mA VCE = -10V 40
IC = -10mA VCE = -10V 40
IC = -150mA VCE = -10V 40 120
hFE(1) Forward-current transfer
ratio
IC = -500mA VCE = -10V 40
DYNAMIC CHARACTERISTICS
IC = -50mA VCE = -20V
fT Transition Frequency
f = 100MHz
170 MHz
VCB = -10V IE = 0
Cobo Output Capacitance f = 1.0MHz 8
VEB = -2V IC = 0
Cibo Input Capacitance f = 1.0MHz 30
pF
IC = -150mA VCC = -30V
ton Turn-On Time IB1 = -15mA 45
IC = -150mA VCC = -30V
toff Turn-Off Time IB1 = - IB2 = -15mA 300
ns
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2906ACSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8079
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
2 1
0.51 ± 0.10
(0.02 ± 0.004) 0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012) rad.
rad.
A =
3
LCC1
Underside View
Pad 1 - Base Pad 2 - Emitter Pad 3 - Collector
