PROGRAMMABLE THRESHOLD COUPLER ISOLATION | CURRENT TYPICAL rion VOLTAGE (Vpy)| TRANSFER USEC.) Vee Isat) . MIN. RATIO MIN. Tr Tr . H11A10 1500 a 2 2 GE TYPE AC INPUT COUPLER H11AA1 H11AA2 HIGH VOLTAGE COUPLER 2500 1500 1500 1500 1500 1775 Vas PHOTO DARLINGTON OUTPUT H11B1 2500 H11B2 1500 H11B3 1500 H11B255 1500 H15B1 4000 Vams H15B2 4000 Vams 4N29 2500 4N29A 1775 Vrms 4N30 1500 4N31 1500 4N32 2500 4N33 4N32A 1775 Vans 1500 PHOTO SCR OUTPUT ISOLATION | If TRIGGER] tp 100C | BLOCKING TYPICAL GE TYPE VOLTAGE MIN. ) | (MAX.) uA | VOLTAGE (MIN.)| TON @sec.) | YF (MAX) PHOTON COUPLED INTERRUPTER MODULE PAGE BVEco TYPICAL Vce(sat) Ip (nA NO. OUTPUT CURRENT p (nA) (Vv) [TON GSEQ) [ty (SEC) MAX, H13A1 Ip = 20mA 200uA 30 : H13A2 Tr = 20mA SOKA 30 H13B1 Ir = 20mA 2500HA 25 H13B2 IF = 20mA 1000HA 25 GE TYPE MATCHED EMITTER DETECTOR PAIRS 129Photon Coupled Isolator 4N38-4N38A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor 4 The General Electric 4N38 and 4N38A consist of a gallium * arsenide infrared emitting diode coupled with a silicon photo! | | transistor in a dual in-line package. FEATURES: e Fast switching speeds e High DC current transfer ratio e High isolation resistance e 2500 volts isolation voltage e I/O compatible with integrated circuits tIndicates JEDEC registered values 6 5 4 absolute maximum ratings: (25C) (unless otherwise specified) +Storage Temperature -55 to 150C. Operating Temperature -55 to 100C. Lead Soldering Time (at 260C) 10 seconds. N searing | + Le ts PLANE Ni at | Bis ys A sce A TL ILI 8 3 ri c D (TOP VIEW} S E F 4 6 G a it ot 4 K M H fe ol Fle N P R Ss MILLIMETER NCH NOTE? |symBou | MIN. | MAX.| MIN. | MAX. 330] .350/8.38 ae9 300 REFI7Z62 REF 340) \ae4 016} 020, 406] 508 200 5.08 040] O7O]1.01 |1.78 O9o] 110/228 |2.79 2.16 Hos} or2al 203) 305 100 54 018 381 100] 185/254 | 470) -225) 280]6.71 |7.12 I, There shall be a permanent indication of term inal orientation in the quadrant adjacent to terminal |. D 2. Installed position lead centers. 3. Overat! installed dimension. 4. These mensurements are made from the seat ing plane. 5. Four places. +Power Dissipation + Reverse Voltage INFRARED EMITTING DIODE + Forward Current (Continuous) + Forward Current (Peak) (Pulse width 300usec, 2% duty cycle) PHOTO-TRANSISTOR *150 milliwatts +Power Dissipation 80 milliamps +VcEO 3 ampere +VcBo TVECO 3 volts *Derate 2.0 mW/C above 25C ambient. Collector Current (Continuous) **Derate 2.0 mW/C above 25C ambient. **150 80 80 7 100 milliwatts volts volts volts milliamps {Total device dissipation @ Ty = 25C. Pp 250 mW. +Derate 3.3 mW/C above 25C ambient. individual electrical characteristics (25C) 539 eee EMITTING TYP. | MAX, UNITS PHOTO-TRANSISTOR MIN. | TYP.| MAX, UNITS { Forward Voltage 1.2 |] 1.5 | volts {Breakdown Voltage V(prycEo 80 - |volts (Ip = 10mA) (Uc = lmA, Ip = O) {Breakdown Voltage VigrjycBo 80 {volts (Ic = 1A, Ip = O) 7 Reverse Current _ 100 | microamps || t Breakdown Voltage VigryEco 7 - |volts (Vp =3V) (Ug = 100A, Ip = O) +Collector Dark Current Icgo _ 50 }|nanoamps (Vcr = 60V, Ip = O) Capacitance 50 - picofarads |} +Collector Dark Current Icgo 20 |nanoamps V = O,f = 1 MHz (VoR = 60V, Ip = 0) coupled electrical characteristics (25C) MIN TYP. | MAX UNITS +Isolation Voltage 60Hz with the input terminals (diode) 4N38 {1500 _ volts (peak) shorted together and the output terminals (transistor) 4N38A {2500 _ volts (peak) shorted together. 4N38A 11775 ~ volts(RMS) (1 sec.) +Saturation Voltage Collector Emitter (lp = 20mA, I = 4mA) _ _ 1.0 | volts Resistance IRED to Photo-Transistor (@ 500 volts) 100 _ gigaohms Capacitance IRED to Photo-Transistor (@ 0 volts, f = 1 MHz) - i | picofarad DC Current Transfer Ration (Ip = 10mA, Vcg = 10V) 10 % Switching Speeds (Vog = 10V, Ic, = 2mA, Ry = 100) Turn-On Time toy _ 5 _ microseconds Turn-Off Time tore _ 5 microseconds4N38-38A TYPICAL CHARACTERISTICS NORMALIZED TO: 0.1 Vce = 10 VOLTS Ip = 1OmA T ceo -NORMALIZED OUTPUT CURRENT 0.01 i 2 4. 6 8 10 20 4060 80 100 Is -INPUT CURRENT - mA 1. OUTPUT CURRENT VS INPUT CURRENT 1000 >= 7 Zt 100 a 7 / 5 10 Ww ec = / 10 : / at = [+ S ol / Ol / 001, 5 20 : 5 Ve - FORWARD VOLTAGE ~ VOLTS 3. INPUT CHARACTERISTICS 105 102 10! NORMALIZED TO: Voce = 60 VOLTS Ip = 0 Ta = +26C Togo NORMALIZED DARK CURRENT +25 +50 +75 Ta ~ AMBIENT TEMPERATURE - C 5. NORMALIZED DARK CURRENT VS TEMPERATURE +100 +125 10 NORMALIZED TO: Voce = 10 VOLTS Ip = 10mA Ta = +25C Toeq NORMALIZED OUTPUT CURRENT O.l -55 -15 +25 +65 Ta - AMBIENT TEMPERATURE - C 2. OUTPUT CURRENT VS TEMPERATURE +100 Ip = 1OmA NORMALIZED TO: Vee = 10 VOLTS Ip = 1OmA Teeo7 NORMALIZED OUTPUT CURRENT Ol 100 al | 10 Vog ~ COLLECTOR TO EMITTER VOLTAGE - VOLTS 4. OUTPUT CHARACTERISTICS 300 Nn a 3 200 150 100 -COLLECTOR BASE CURRENT ~- pA Vep * 10V Ip =10mA g 50 8 Vep* lOV -50 -25 +25 +50 Ta - AMBIENT TEMPERATURE - C 6. COLLECTOR BASE CURRENT VS TEMPERATURE +75 +100