CREAT BY ART
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Typical IR less than 1μA above 10V
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
SYMBOL UNIT
P
PK
Watts
P
D
Watts
T
JO
C
T
STG O
C
Note 2: V
F
=3.5V on SMBJ5.0 thru SMBJ90 Devices and V
F
=5.0V on SMBJ100 thru SMBJ170 Devices
2. Electrical Characterstics Apply in Both Directions
PART NO.
Note 1: "xxxx" defines voltage from 5.0V (SMBJ5.0) to 170V (SMBJ170A)
PART NO.
SMBJ20A
SMBJ20A
SMBJ20A
Document Number: DS_D1405063 Version: K14
SMBJ20AHR5 H R5 AEC-Q101 qualified
1. For Bidrectional Use C or CA Suffix for Types SMBJ5.0 thru Types SMBJ170
SMBJ20A R5 R5
SMBJ20A R5G R5 G Green compound
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN
COMPOUND DESCRIPTION
850 / 7" Plastic reel
R4 SMB 3,000 / 13" Paper reel
M4 SMB 3,000 / 13" Plastic reel
AEC-Q101
QUALIFIED
PACKING CODE GREEN COMPOUND
CODE
PACKAGE PACKING
SMBJxxxx
(Note 1) Prefix "H"
R5
Suffix "G"
SMB
Storage temperature range - 55 to +150
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25℃ Per Fig. 2
Devices for Bipolar Applications
ORDERING INFORMATION
Typical thermal resistance R
θJC
R
θJA
10
55 ℃/W
Operating junction temperature range - 55 to +150
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
100 A
Maximum instantaneous forward voltage at 50 A for
Unidirectional only (Note 2) V
F
3.5 / 5.0 Volts
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER VALUE
Peak power dissipation at T
A
=25℃, tp=1ms (Note 1) 600
Steady state power dissipation 3
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
DO-214AA (SMB)
MECHANICAL DATA
Case: DO-214AA (SMB)
Polarity: Indicated by cathode band
Weight: 0.09 g (approximately)
SMBJ SERIES
Taiwan Semiconductor
Suface Mount Transient Voltage Suppressor
FEATURES
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Moisture sensitivity level: level 1, per J-STD-020
CREAT BY ART
(TA=25℃ unless otherwise noted)
Document Number: DS_D1405063 Version: K14
RATINGS AND CHARACTERISTICS CURVES
Taiwan Semiconductor
SMBJ SERIES
0
25
50
75
100
125
0 25 50 75 100 125 150 175 200
PEAK PULSE POWER(PPP) OR CURRENT (IPP) A
DERATING IN PERCENTAGE (%)
TA, AMBIENT TEMPERATURE (oC)
FIG.2 PULSE DERATING CURVE
10
100
1 10 100
IFSM, PEAK FORWARD SURGE ACURRENT
(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
8.3ms Single Half Sine Wave
UNIDIRECTIONAL ONLY
0
20
40
60
80
100
120
140
00.511.522.533.54
PEAK PULSE CURRENT (%)
t, TIME ms
FIG. 3 CLAMPING POWER PULSE WAVEFORM
td
Peak Value
IPPM
tr=10
μ
s
Half Value-IPPM/2
10/1000μs WAVEFORM
as DEFINED by R.E.A.
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
10
100
1000
10000
100000
1 10 100
CJ, JUNCTION CAPACITANCE (pF) A
V(BR), BREAKDOWN VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
VR
=
0
VR-RATED
STAND-OFF
VOLTAGE
0.1
1
10
100
0.1 1 10 100 1000 10000
PPPM, PEAK PULSE POWER, KW
tp, PULSE WIDTH, (μs)
FIG. 1 PEAK PULSE POWER RATING CURVE
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
CREAT BY ART
Test
Current
Stand-Off
Voltage
Maximum
Reverse
Leakage
@ V
WM
Maximum
Peak
Pulse
Current
Maximum
Clamping
Voltage
@ I
PPM
I
T
V
WM
I
D
I
PPM
Vc
mA V uA A V
Min. Max. (Note 2)
SMBJ5.0 KD 6.40 7.30 10 5.0 800 65.0 9.6
SMBJ5.0A KE 6.40 7.00 10 5.0 800 68.0 9.2
SMBJ6.0 KF 6.67 8.15 10 6.0 800 55.0 11.4
SMBJ6.0A KG 6.67 7.37 10 6.0 800 61.0 10.3
SMBJ6.5 KH 7.22 8.82 10 6.5 500 51.0 12.3
SMBJ6.5A KK 7.22 7.98 10 6.5 500 56.0 11.2
SMBJ7.0 KL 7.78 9.51 10 7.0 200 47.0 13.3
SMBJ7.0A KM 7.78 8.60 10 7.0 200 52.0 12.0
SMBJ7.5 KN 8.33 10.3 1 7.5 100 44.0 14.3
SMBJ7.5A KP 8.33 9.21 1 7.5 100 48.0 12.9
SMBJ8.0 KQ 8.89 10.9 1 8.0 50 42.0 15.0
SMBJ8.0A KR 8.89 9.83 1 8.0 50 46.0 13.6
SMBJ8.5 KS 9.44 11.5 1 8.5 10 39.0 15.9
SMBJ8.5A KT 9.44 10.4 1 8.5 10 43.0 14.4
SMBJ9.0 KU 10.0 12.2 1 9.0 5 37.0 16.9
SMBJ9.0A KV 10.0 11.1 1 9.0 5 40.0 15.4
SMBJ10 KW 11.1 13.6 1 10 5 33.0 18.8
SMBJ10A KX 11.1 12.3 1 10 5 37.0 17.0
SMBJ11 KY 12.2 14.9 1 11 1 31.0 20.1
SMBJ11A KZ 12.2 13.5 1 11 1 34.0 18.2
SMBJ12 LD 13.3 16.3 1 12 1 28.0 22.0
SMBJ12A LE 13.3 14.7 1 12 1 31.0 19.9
SMBJ13 LF 14.4 17.6 1 13 1 26.0 23.8
SMBJ13A LG 14.4 15.9 1 13 1 29.0 21.5
SMBJ14 LH 15.6 19.1 1 14 1 24.4 25.8
SMBJ14A LK 15.6 17.2 1 14 1 27.0 23.2
SMBJ15 LL 16.7 20.4 1 15 1 23.1 26.9
SMBJ15A LM 16.7 18.5 1 15 1 25.1 24.4
SMBJ16 LN 17.8 21.8 1 16 1 21.8 28.8
SMBJ16A LP 17.8 19.7 1 16 1 24.2 26.0
SMBJ17 LQ 18.9 23.1 1 17 1 20.0 30.5
SMBJ17A LR 18.9 20.9 1 17 1 22.8 27.6
SMBJ18 LS 20.0 24.4 1 18 1 19.5 32.2
SMBJ18A LT 20.0 22.1 1 18 1 21.5 29.2
SMBJ20 LU 22.2 27.1 1 20 1 17.6 35.8
SMBJ20A LV 22.2 24.5 1 20 1 19.4 32.4
SMBJ22 LW 24.4 29.8 1 22 1 15.0 39.4
SMBJ22A LX 24.4 26.9 1 22 1 17.7 35.5
SMBJ24 LY 26.7 32.6 1 24 1 14.6 43.0
SMBJ24A LZ 26.7 29.5 1 24 1 16.0 38.9
SMBJ26 MD 28.9 35.3 1 26 1 13.5 46.6
SMBJ26A ME 28.9 31.9 1 26 1 14.9 42.1
SMBJ28 MF 31.1 38.0 1 28 1 12.6 50.0
SMBJ28A MG 31.1 34.4 1 28 1 13.8 45.4
Document Number: DS_D1405063 Version: K14
SMBJ SERIES
Taiwan Semiconductor
Device
Device
Marking
Code
Breakdown
Voltage
(Note 1)
V
BR
V
CREAT BY ART
Test
Current
Stand-Off
Voltage
Maximum
Reverse
Leakage
@ V
WM
Maximum
Peak
Pulse
Current
Maximum
Clamping
Voltage
@ I
PPM
I
T
V
WM
I
D
I
PPM
Vc
mA V uA A V
Min. Max. (Note 2)
SMBJ30 MH 33.3 40.7 1 30 1 11.7 53.5
SMBJ30A MK 33.3 36.8 1 30 1 13.0 48.4
SMBJ33 ML 36.7 44.9 1 33 1 10.6 59.0
SMBJ33A MM 36.7 40.6 1 33 1 11.8 53.3
SMBJ36 MN 40.0 48.9 1 36 1 9.8 64.3
SMBJ36A MP 40.0 44.2 1 36 1 10.8 58.1
SMBJ40 MQ 44.4 54.3 1 40 1 8.8 71.4
SMBJ40A MR 44.4 49.1 1 40 1 9.7 64.5
SMBJ43 MS 47.8 58.4 1 43 1 8.2 76.7
SMBJ43A MT 47.8 52.8 1 43 1 9.0 69.4
SMBJ45 MU 50.0 61.1 1 45 1 7.8 80.3
SMBJ45A MV 50.0 55.3 1 45 1 8.6 72.7
SMBJ48 MW 53.3 65.1 1 48 1 7.3 85.5
SMBJ48A MX 53.3 58.9 1 48 1 8.1 77.4
SMBJ51 MY 56.7 69.3 1 51 1 6.9 91.1
SMBJ51A MZ 56.7 62.7 1 51 1 7.6 82.4
SMBJ54 ND 60.0 73.3 1 54 1 6.5 96.3
SMBJ54A NE 60.0 66.3 1 54 1 7.2 87.1
SMBJ58 NF 64.4 78.7 1 58 1 6.1 103
SMBJ58A NG 64.4 71.2 1 58 1 6.7 93.6
SMBJ60 NH 66.7 81.5 1 60 1 5.8 107
SMBJ60A NK 66.7 73.7 1 60 1 6.5 96.8
SMBJ64 NL 71.1 86.9 1 64 1 5.5 114
SMBJ64A NM 71.1 78.6 1 64 1 6.1 103
SMBJ70 NN 77.8 95.1 1 70 1 5.0 125
SMBJ70A NP 77.8 86 1 70 1 5.5 113
SMBJ75 NQ 83.3 102 1 75 1 4.7 134
SMBJ75A NR 83.3 92.1 1 75 1 5.2 121
SMBJ78 NS 86.7 106 1 78 1 4.5 139
SMBJ78A NT 86.7 95.8 1 78 1 5.0 126
SMBJ85 NU 94.4 115 1 85 1 4.1 151
SMBJ85A NV 94.4 104 1 85 1 4.6 137
SMBJ90 NW 100 122 1 90 1 3.9 160
SMBJ90A NX 100 111 1 90 1 4.3 146
SMBJ100 NY 111 136 1 100 1 3.5 179
SMBJ100A NZ 111 123 1 100 1 3.8 162
SMBJ110 PD 122 149 1 110 1 3.2 196
SMBJ110A PE 122 135 1 110 1 3.5 177
SMBJ120 PF 133 163 1 120 1 2.9 214
SMBJ120A PG 133 147 1 120 1 3.2 193
SMBJ130 PH 144 176 1 130 1 2.7 231
SMBJ130A PK 144 159 1 130 1 3.0 209
Document Number: DS_D1405063 Version: K14
Device
Device
Marking
Code
Breakdown
Voltage
(Note 1)
V
BR
V
SMBJ SERIES
Taiwan Semiconductor
CREAT BY ART
Test
Current
Stand-Off
Voltage
Maximum
Reverse
Leakage
@ V
WM
Maximum
Peak
Pulse
Current
Maximum
Clamping
Voltage
@ I
PPM
I
T
V
WM
I
D
I
PPM
Vc
mA V uA A V
Min. Max. (Note 2)
SMBJ150 PL 167 204 1 150 1 2.3 266
SMBJ150A PM 167 185 1 150 1 2.5 243
SMBJ160 PN 178 218 1 160 1 2.2 287
SMBJ160A PP 178 197 1 160 1 2.4 259
SMBJ170 PQ 189 231 1 170 1 2.0 304
SMBJ170A PR 189 209 1 170 1 2.2 275
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. All terms and symbols are consistent with ANSI/IEEE C62.35.
4. For bidirectional use C or CA suffix for types SMBJ5.0 thru SMBJ170
5. For bipolar types having V
WM
of 10 volts (SMBJ8.0C) and under, the I
D
limit is doubled.
Document Number: DS_D1405063 Version: K14
Device
Device
Marking
Code
Breakdown
Voltage
(Note 1)
V
BR
V
SMBJ SERIES
Taiwan Semiconductor
Min Max Min Max
A 1.95 2.10 0.077 0.083
B 4.25 4.75 0.167 0.187
C 3.48 3.73 0.137 0.147
D 1.99 2.61 0.078 0.103
E 0.90 1.41 0.035 0.056
F 5.10 5.30 0.201 0.209
G 0.10 0.20 0.004 0.008
H 0.15 0.31 0.006 0.012
P/N = Device Marking Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number: DS_D1405063 Version: K14
E 6.8 0.268
2.5 0.098
C 4.3 0.169
D 1.8 0.071
MARKING DIAGRAM
SUGGESTED PAD LAYOUT
Symbol Unit (mm) Unit (inch)
A 2.3 0.091
B
SMBJ SERIES
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405063 Version: K14
SMBJ SERIES
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
