TOSHIBA 2SC3138 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) 2$C3138 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm e High Voltage : VopBpo=200V (Min.) VCEO =200V (Min.) e Small Flat Package e Complementary to 25A1255 MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING | UNIT we ! | s Collector-Base Voltage VCBO 200 Vv *- | | IS Collector-Emitter Voltage VCEO 200 Vv - t Emitter-Base Voltage VEBO 5 Vv z Collector Current Ic 50 mA 1. BASE Base Current Ip 20 mA 2. EMITTER Collector Power Dissipation P 150 mW 3. COLLECTOR Junction Temperature Tj 125 C JEDEC TO-236MOD Storage Temperature Range Tstg 55~125 C EIAJ 80-59 TOSHIBA 2-38F1A Weight : 0.012g MARKING Type Name o hrp Rank Ka] NO Ee HA 96100 1EAA1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability te physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-12-17 1/4TOSHIBA 2SC3138 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBo Vcp=200V, Ip=0 0.1} vA Emitter Cut-off Current IEBO VEB=5V, Ic=0 0.1) A Collector-Base Breakdown _ _ Voltage V (BR) CBO| Ic =0.1mA, Ip=0 200); _ Vv Collector-Emitter Breakdown Voltage V (BR) CEO|I =1mA, Ip=0 200 | Vv DC Current Gain hFE (Note)| VoR=3V, Ic=10mA 70; 240 Collector-Emitter Saturation Voltage VCE (sat) |Ic=10mA, Ip=1mA 0.1 0.5) V Base-Emitter Saturation Voltage VBE (sat) |Ic=10mA, Ip=1mA _ 0.75 15] V Transition Frequency fp VcCE=10V, Ic=2mA 50); 100); | MHz Collector Output Capacitance | Cop Vcp=10V, In=0, f=1MHz 2 4| pF Turn on Time | ton Vcc=50V, Ic=6mA, 03) Switching : Ipi= Ipo=0.6mA, Time Storage Time | tse | Pulse Width=5ps, = 2| | 4 Fall Time tf Duty Cycle= 2% _ 04) (Note) : hpg Classification O: 70~140, Y : 120~240 1998-12-17 2/4TOSHIBA 2SC3138 Ic VCE (LOW VOLTAGE REGION) Ic VCE (LOW VOLTAGE REGION) 140 COMMON 120 EMITTER Ta =25C 30 COMMON EMITTER Ta=25C 100 80 60 40 Ip=20pA COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT Ic (mA) 0 1 2 3 4 5 6 0 20 40 60 80 100 120 COLLECTOR-EMITTER VOLTAGE Vcr (V) COLLECTOR-EMITTER VOLTAGE Vcr (V) hFE Ic VCE (sat) Ic 1000 COMMON EMITTER z COMMON EMITTER 500 VCE=3V 0.5| Ic/Ip=10 g 36 = 300 ae 03 Ta=100C > = < 25 a & Ta=100C e 100 BS ot z a> S 5 = 50 Say 0.05 5 ao oS 30 Be 0.03 Bg BS 3> wl 10 a 0.01 0.1 0305 1 3 5 10 30 50 0.1 03 05 1 3 5 10 30 50 COLLECTOR CURRENT Ig (mA) COLLECTOR CURRENT Ig (mA) VBE (sat) Ic ft - Ic COMMON EMITTER I/Ig=10 COMMON EMITTER 500 VcE=10V Ta=25C 300 100 VBE (sat) (V) 50 30 BASE-EMITTER SATURATION VOLTAGE TRANSITION FREQUENCY fp (MIIz) . 10 0.1 0.3 0.5 1 3.5 10 30 50 0.1 0.3 0.5 1 3.5 10 30 50 COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT Ic (mA) 1998-12-17 3/4TOSHIBA COLLECTOR OUTPUT CAPACITANCE Cob @F) Cob VCB Ip=0 f=1MHz Ta=25C 3 5 10 30 = 50 COLLECTOR-BASE VOLTAGE Vcp (V) 100 200 160 Po @nw) e Nw Co ao Oo 40 COLLECTOR POWER DISSIPATION 2$C3 138 Po Ta 20 40 60 80 100 120 140 AMBIENT TEMPERATURE Ta (C) 1998-12-17 4/4