© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ600 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC110 TC = 110°C 48 A
ID110 TC = 110°C 30 A
ICM TC = 25°C, 1ms 280 A
SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 120 A
(RBSOA) Clamped inductive load @ ≤ 600V
PCTC = 25°C 300 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 6 g
DS100036(09/08)
G = Gate C = Collector
E = Emitter TAB = Collector
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 600 V
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES 300 μA
VGE = 0V TJ = 125°C 1.75 mA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 32A, VGE = 15V, Note 1 1.8 V
VCES = 600V
IC110 = 48A
VCE(sat) ≤≤
≤≤
≤ 1.8V
GenX3TM 600V IGBT
with Diode
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
IXGH48N60B3D1
TO-247(IXGH)
GC
E
( TAB )
Features
zOptimized for low conduction and
switching losses
zSquare RBSOA
zAnti-parallel ultra fast diode
zInternational standard package
Advantages
zHigh power density
zLow gate drive requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
Preliminary Technical Information
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH48N60B3D1
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs IC = 30A, VCE = 10V, Note 1 28 46 S
Cies 3980 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 190 pF
Cres 45 pF
Qg 115 nC
Qge IC = 40A, VGE = 15V, VCE = 0.5 • VCES 21 nC
Qgc 40 nC
td(on) 22 ns
tri 25 ns
Eon 0.84 mJ
td(off) 130 200 ns
tfi 116 200 ns
Eoff 0.66 1.20 mJ
td(on) 19 ns
tri 25 ns
Eon 1.71 mJ
td(off) 190 ns
tfi 157 ns
Eoff 1.30 mJ
RthJC 0.42 °C/W
RthCS 0.21 °C/W
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXGH) Outline
Inductive Load, TJ = 125°C
IC = 30A, VGE = 15V
VCE = 480V, RG = 5Ω
Reverse Diode (FRED) (D1 Version ONLY)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
VF IF = 30A, VGE = 0V, Note 1 2.8 V
TJ = 150°C 1.6 V
IRM 4 A
trr TJ = 100°C 100 ns
RthJC 1.5 °C/W
RthCS 1.5 °C/W
IF= 30A, VGE = 0V, VR= 100V
-diF/dt =100A/μs
IF = 1A; -di/dt = 100A/μs, VR = 30V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Inductive Load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 480V, RG = 5Ω
© 2008 IXYS CORPORATION, All rights reserved
Fi g . 1. Ou tp u t C h ar acter i sti cs
@ 25ºC
0
10
20
30
40
50
60
70
80
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
VCE - Volts
IC - Amperes
VGE
= 15V
13V
11V
7V
5V
9V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
30
60
90
120
150
180
210
240
270
300
0246810121416
VCE - Volts
IC
-
Amperes
VGE
= 15V
13V
11V
7V
9V
Fi g . 3. Ou tpu t C h a r acter isti cs
@ 125ºC
0
10
20
30
40
50
60
70
80
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
VCE - Volts
IC - Amperes
VGE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
VCE(sat) - Normalized
VGE
= 15V
I C = 80A
I C = 40A
I C = 20A
Fi g . 5. C ol l ect o r-to - Emi tter Vo l tag e
vs. Gate-to -Emi tter Vo ltag e
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
5 6 7 8 9 10 11 12 13 14 15
VGE - Volts
VCE - Volts
I C
= 80A
40A
20A
TJ = 25ºC
Fi g . 6. I n pu t Admittan ce
0
20
40
60
80
100
120
140
160
180
200
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGE - Volts
IC
-
Amperes
TJ = 125ºC
25ºC
- 40ºC
IXGH48N60B3D1
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH48N60B3D1
Fi g. 11. Maximum Tr an si ent Ther mal I mped an ce
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
Fig. 7. T ransconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 10. R everse-B i as Safe Oper ati n g Area
0
20
40
60
80
100
120
140
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 5Ω
dV / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 40A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
IXYS REF: G_48N60B3D1(56) 05-05-08-A
© 2008 IXYS CORPORATION, All rights reserved
Fig. 12. Inductive Switching
Ener g y L o ss vs. Gate R esi stance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 5 10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
E
off
- MilliJoules
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
E
on
- MilliJoules
Eoff Eon
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 30A
I
C
= 60A
I
C
= 15A
Fig. 17. Inductive Turn-off
Switc h i n g Times vs . Gate R esistan ce
120
130
140
150
160
170
180
190
200
210
220
0 5 10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f
- Nanoseconds
150
200
250
300
350
400
450
500
550
600
650
t
d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
VCE = 480V
I
C
= 60A
I
C
= 30A
I
C
= 15A
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5Ω
,
V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction T emperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
E
on
- MilliJoules
Eoff Eon
- - - -
R
G
= 5Ω
,
V
GE
= 15V
V
CE
= 480V
I
C
= 30A
I
C
= 60A
I
C
= 15A
Fig. 16. Inductive Turn-off
Switchi n g Ti mes vs. C o l l ector Cu r r en t
100
110
120
130
140
150
160
170
180
190
200
210
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
f
- Nanoseconds
120
130
140
150
160
170
180
190
200
210
220
230
t
d(off)
- Nanoseconds
t
f
t
d(off) - - - -
R
G
= 5Ω
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Inductive Turn-off
Switchi n g Ti mes vs. Ju n ctio n Temp er atur e
100
110
120
130
140
150
160
170
180
190
200
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
120
130
140
150
160
170
180
190
200
210
220
t
d(off)
- Nanoseconds
t
f
t
d(off) - - - -
R
G
= 5Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 60A, 15A
I C = 60A, 15A
I
C
= 30A
IXGH48N60B3D1
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH48N60B3D1
IXYS REF: G_48N60B3D1(56) 05-05-08-A
Fig. 18. Inductive Turn-on
Switchi n g Times vs. Gate Resi stance
0
10
20
30
40
50
60
70
80
90
100
110
0 5 10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r
- Nanoseconds
15
20
25
30
35
40
45
50
55
60
65
70
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 15A
I
C
= 30A
I
C
= 60A
Fig. 19. Inductive Turn-on
Switchi n g Times vs. C o l l ector C u r r en t
10
15
20
25
30
35
40
45
50
55
60
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
r
- Nanoseconds
18
19
20
21
22
23
24
25
26
27
28
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 5Ω
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
25ºC < T
J
< 125ºC
Fig. 20. Inductive Turn-on
Switching Times vs. Junction T emperature
5
10
15
20
25
30
35
40
45
50
55
60
65
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
16
17
18
19
20
21
22
23
24
25
26
27
28
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 15A
I
C
= 30A
I
C
= 60A
© 2008 IXYS CORPORATION, All rights reserved
IXGH48N60B3D1
IXYS REF: G_48N60B3D1(56) 05-05-08-A
200 600 10000 400 800
60
70
80
90
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
VFR
diF/dt
V
200 600 10000 400 800
0
5
10
15
20
25
30
100 1000
0
200
400
600
800
1000
0123
0
10
20
30
40
50
60
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/μs
A
V
nC
A/μsA/μs
trr
ns tfr
ZthJC
A/μs
μs
DSEP 29-06
IF= 60A
IF= 30A
IF= 15A
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 30A
Fig. 23. Peak reverse current IRM
versus -diF/dt
Fig. 22. Reverse recovery charge Qr
versus -diF/dt
Fig. 21. Forward current IF versus VF
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
Qr
IRM
Fig. 24. Dynamic parameters Qr, IRM
versus TVJ
Fig. 25. Recovery time trr versus -diF/dt Fig. 26. Peak forward voltage VFR and
tfr versus diF/dt
IF= 60A
IF= 30A
IF= 15A
tfr
VFR
Fig. 27. Transient thermal resistance junction to case
TVJ=25°C
TVJ=100°C
TVJ=150°C
Time - Seconds
0.0001 0.001 0.01 0.1 1
ZthJC - K/W
0.001
0.01
0.1
1
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
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