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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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LINEAR & POWER AMPLIFIERS - SMT
HMC414MS8G / 414MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v04.0607
General Description
Features
Functional Diagram
The HMC414MS8G & HMC414MS8GE are high effi-
ciency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power ampli ers which operate
between 2.2 and 2.8 GHz. The ampli er is packaged
in a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal per-
formance. With a minimum of external components,
the ampli er provides 20 dB of gain, +30 dBm of satu-
rated power at 32% PAE from a +5V supply voltage.
The ampli er can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
Gain: 20 dB
Saturated Power: +30 dBm
32% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
Electrical Speci cations, TA = +25° C, As a Function of Vs, Vpd = 3.6V
Typical Applications
This ampli er is ideal for use as a power
ampli er for 2.2 - 2.7 GHz applications:
• BLUETOOTH
• MMDS
Parameter Vs = 3.6V Vs = 5V
Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 2.2 - 2.8 2.2 - 2.8 GHz
Gain 17 20 25 17 20 25 dB
Gain Variation Over Temperature 0.03 0.04 0.03 0.04 dB/ °C
Input Return Loss 8 8 dB
Output Return Loss 9 9 dB
Output Power for 1 dB Compression (P1dB) 21 25 23 27 dBm
Saturated Output Power (Psat) 27 30 dBm
Output Third Order Intercept (IP3) 30 35 35 39 dBm
Noise Figure 6.5 7.0 dB
Supply Current (Icq) Vpd = 0V / 3.6V 0.002 / 240 0.002 / 300 mA
Control Current (Ipd) Vpd = 3.6V 7 7 mA
Switching Speed tON, tOFF 45 45 ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Return Loss, Vs= 3.6V Return Loss, Vs= 5V
Gain vs. Temperature, Vs= 3.6V Gain vs. Temperature, Vs= 5V
P1dB vs. Temperature, Vs= 3.6V P1dB vs. Temperature, Vs= 5V
0
5
10
15
20
25
30
2 2.2 2.4 2.6 2.8 3
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
30
2 2.2 2.4 2.6 2.8 3
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
2 2.2 2.4 2.6 2.8 3
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
2 2.2 2.4 2.6 2.8 3
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
2 2.2 2.4 2.6 2.8 3
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
2 2.2 2.4 2.6 2.8 3
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
HMC414MS8G / 414MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v04.0607
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 60
LINEAR & POWER AMPLIFIERS - SMT
Power Compression@ 2.4 GHz, Vs= 3.6V Power Compression@ 2.4 GHz, Vs= 5V
Psat vs. Temperature, Vs= 3.6V Psat vs. Temperature, Vs= 5V
Output IP3 vs. Temperature, Vs= 3.6V Output IP3 vs. Temperature, Vs= 5V
0
4
8
12
16
20
24
28
32
2 2.2 2.4 2.6 2.8 3
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
32
2 2.2 2.4 2.6 2.8 3
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
0
6
12
18
24
30
36
-14 -9 -4 1 6 11 16
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
6
12
18
24
30
36
-14 -9 -4 1 6 11 16
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
12
17
22
27
32
37
42
2 2.2 2.4 2.6 2.8 3
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
12
17
22
27
32
37
42
2 2.2 2.4 2.6 2.8 3
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
HMC414MS8G / 414MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v04.0607
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Noise Figure vs. Temperature, Vs= 3.6V Noise Figure vs. Temperature, Vs= 5V
Reverse Isolation
vs. Temperature, Vs= 3.6V
Gain & Power vs. Supply Voltage
Power Down Isolation, Vs= 3.6V
Gain, Power & Quiescent
Supply Current vs Vpd@ 2.4 GHz
-40
-30
-20
-10
0
2 2.2 2.4 2.6 2.8 3
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
2 2.2 2.4 2.6 2.8 3
ISOLATION (dB)
FREQUENCY (GHz)
0
3
6
9
12
15
2 2.2 2.4 2.6 2.8 3
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
0
3
6
9
12
15
2 2.2 2.4 2.6 2.8 3
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
18
20
22
24
26
28
14
18
22
26
30
34
2.75 3.25 3.75 4.25 4.75 5.25
Gain
P1dB
Psat
GAIN dB)
P1dB, Psat (dBm)
Vcc SUPPLY VOLTAGE (Vdc)
12
16
20
24
28
32
0
80
160
240
320
400
2 2.4 2.8 3.2 3.6
GAIN (dB), P1dB (dBm), Psat (dBm)
Icq (mA)
Vpd (Vdc)
Icq
P1dB
Psat
Gain
HMC414MS8G / 414MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v04.0607
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
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LINEAR & POWER AMPLIFIERS - SMT
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +5.5 Vdc
Control Voltage (Vpd1, Vpd2) +4.0 Vdc
RF Input Power (RFIN)(Vs = +5.0,
Vpd = +3.6 Vdc) +17 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 27 mW/°C above 85 °C) 1.755 W
Thermal Resistance
(junction to ground paddle) 37 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC414MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H414
XXXX
HMC414MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H414
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
HMC414MS8G / 414MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v04.0607
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Pin Number Function Description Interface Schematic
1RFIN This pin is AC coupled
and matched to 50 Ohms.
2NC Not Connected.
3, 4 RFOUT RF output and DC bias for the output stage.
5GND
Ground: Backside of package has exposed metal ground slug that must be
connected to ground thru a short path. Vias under the device are required.
6, 8 Vpd1, Vpd2
Power control pin. For maximum power, this pin should be connected to
3.6V. For 5V operation, a dropping resistor is required. A higher voltage is
not recommended. For lower idle current, this voltage can be reduced.
7Vcc
Power supply voltage for the rst ampli er stage. An external bypass
capacitor of 330 pF is required as shown in the application schematic.
Pin Descriptions
HMC414MS8G / 414MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v04.0607
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 64
LINEAR & POWER AMPLIFIERS - SMT
Evaluation PCB
The circuit board used in the nal application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for Evaluation PCB 105006 [1]
* For 5V operation on Vctl line,
select R1, R2 such that 3.6V is
presented on Pins 6 and 8.
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3 2 mm DC Header
C1 2.7 pF Capacitor, 0603 Pkg.
C2 100 pF Capacitor, 0402 Pkg.
C3 - C6 330 pF Capacitor, 0603 Pkg.
C7 2.2 μF Capacitor, Tantalum
L1 18nH Inductor 0603 Pkg.
U1 HMC414MS8G / HMC414MS8GE
Ampli er
PCB [2] 105074 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC414MS8G / 414MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v04.0607
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 65
Application Circuit
* For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 6 and 8.
TL1 TL2 TL3
Impedance 50 Ohm 50 Ohm 50 Ohm
Length 0.036” 0.3” 0.11”
HMC414MS8G / 414MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
v04.0607
