MITSUBISHI <INTELLIGENT POWER MODULES> PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE PM200DV1A120 FEATURE a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted. c) Error output signal is possible from all each protection upper and lower arm of IPM. d) Compatible V-series package. * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage. APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 1 http://store.iiic.cc/ Sep. 2010 MITSUBISHI <INTELLIGENT POWER MODULES> PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM C1 VP1 VCC CPI IN TjA TjK IGBT OUT Fo FPO FWDi AMP SINK NC GND SC C2E1 V PC V N1 VCC CNI IN TjA TjK IGBT OUT FNO FWDi AMP SINK Fo SC NC GND V NC E2 MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCES IC ICRM Ptot IE IERM Tj Parameter Collector-Emitter Voltage Conditions Collector Current Total Power Dissipation Emitter Current (Free wheeling Diode Forward current) VD=15V, VCIN=15V TC=25C Pulse TC=25C TC=25C Pulse Junction Temperature Ratings 1200 200 400 1388 200 400 -20 ~ +150 Unit V Ratings 20 20 20 20 Unit V V V mA A W A C *: Tc measurement point is just under the chip. CONTROL PART Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Conditions Applied between : VP1-VPC, VN1-VNC Applied between : CPI-VPC, CNI-VNC Applied between : FPO-VPC, FNO-VNC Sink current at FPO, FNO terminals 2 http://store.iiic.cc/ Sep. 2010 MITSUBISHI <INTELLIGENT POWER MODULES> PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Symbol VCC(PROT) VCC(surge) TC Tstg Visol Parameter Supply Voltage Protected by SC Supply Voltage (Surge) Module case operating temperature Storage Temperature Isolation Voltage Conditions VD =13.5V ~ 16.5V Inverter Part, Tj =+125C Start Applied between : C1-E2, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1min. Ratings Unit 800 V 1000 V -20 ~ +100 C -40 ~ +125 2500 C Vrms *: TC measurement point is just under the chip. THERMAL RESISTANCE Symbol Parameter Rth(j-c)Q Rth(j-c)D Thermal Resistance Rth(c-s) Contact Thermal Resistance Conditions Junction to case, IGBT (per 1 element) Junction to case, FWDi (per 1 element) Case to heat sink, (per 1 module) Thermal grease applied (Note.1) (Note.1) (Note.1) Min. - Limits Typ. - Max. 0.09 0.146 - 0.018 - Min. 0.3 - Limits Typ. 1.65 1.85 2.3 0.8 0.3 0.4 2.4 0.4 - Max. 2.15 2.35 3.3 2.0 0.8 1.0 3.3 1.2 1 10 Unit K/W Note.1: If you use this value, Rth(s-a) should be measured just under the chips. ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART Symbol VCEsat VEC ton trr tc(on) toff tc(off) ICES Parameter Conditions Collector-Emitter Saturation Voltage VD=15V, IC=200A VCIN=0V, Pulsed Emitter-Collector Voltage IE=200A, VD=15V, VCIN= 15V Switching Time VD=15V, VCIN=0V 15V VCC=600V, IC=200A Tj=125C Inductive Load Collector-Emitter Cut-off Current (Fig. 1) VCE=VCES, VD=15V , VCIN=15V (Fig. 5) 3 http://store.iiic.cc/ Tj=25C Tj=125C (Fig. 2) (Fig. 3,4) Tj=25C Tj=125C Unit V V s mA Sep. 2010 MITSUBISHI <INTELLIGENT POWER MODULES> PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE CONTROL PART Symbol Parameter Conditions -20Tj125C, VD=15V (Fig. 3, 6) Min. 1.2 1.7 300 VD=15V (Fig. 3, 6) - VP1-VPC VN1-VNC ID Circuit Current VD=15V, VCIN=15V Vth(ON) Vth(OFF) SC Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Applied between : CPI-VPC, CNI-VNC toff(SC) Limits Typ. 2 2 1.5 2.0 - Max. 4 4 1.8 2.3 - 0.2 - Unit mA V A s OT Trip level 135 Over Temperature Protection Detect Temperature of IGBT chip OT(hys) Hysteresis 20 UVt Trip level 11.5 12.0 12.5 Supply Circuit Under-Voltage -20Tj125C Protection Reset level 12.5 UVr IFO(H) 0.01 (Note.2) Fault Output Current VD=15V, VFO=15V 10 15 IFO(L) tFO Fault Output Pulse Width VD=15V (Note.2) 1.0 1.8 Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it. C V mA ms MECHANICAL RATINGS AND CHARACTERISTICS Symbol Mt Ms m Parameter Mounting Torque Conditions Mounting part Main terminal part screw : M6 screw : M6 Weight - Min. 3.92 3.92 - Limits Typ. 4.90 4.90 510 Max. 5.88 5.88 - Unit Nm g RECOMMENDED CONDITIONS FOR USE Symbol VCC Parameter Supply Voltage VD Control Supply Voltage VCIN(ON) VCIN(OFF) fPWM Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time tdead Conditions Applied across C1-E2 terminals Applied between : VP1-VPC, VN1-VNC (Note.3) Applied between : CPI-VPC, CNI-VNC Using Application Circuit of Fig. 8 For IPM's each input signals (Fig. 7) Recommended value 800 Unit V 15.01.5 V 0.8 4.0 20 kHz 3.5 s V Note.3: With ripple satisfying the following conditions: dv/dt swing 5V/s, Variation 2V peak to peak 4 http://store.iiic.cc/ Sep. 2010 MITSUBISHI <INTELLIGENT POWER MODULES> PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) C1(C2) NC V *1 V *1 VD F*O V F*O VD Ic E1(E2) E1(E2) Fig. 1 VCEsat Test C1 Fig. 2 VEC Test C1 NC V P1 V P1 FPO FPO VD1 CPI CPI VPC VPC Vcc NC E1C2 Vcc NC E1C2 V N1 VD2 IE-Ic V*C V*C VD1 V C*I C *I NC C1(C2) NC V N1 FNO FNO V D2 C NI CNI E2 VNC E2 VNC Ic Ic Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform C1(C2) NC A V *1 VD F*O pulse VCE C*I V*C E1(E2) Fig. 5 ICES Test Fig. 6 SC test waveform Fig. 7 Dead time measurement point example 5 http://store.iiic.cc/ Sep. 2010 MITSUBISHI <INTELLIGENT POWER MODULES> PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE 20k 10 C1 VP1 Vcc OUT FPO VD1 IF Fo CPI + Vcc SC - IN VPC 0.1 OT GND E1C2 (U) 20k 10 VN1 Vcc OUT FNO VD2 IF 20k IN VNC 0.1 10 OT Fo CNI VD3 C1 Vcc OUT OT Fo CPI 0.1 E2 VP1 FPO IF SC GND IN VPC SC GND E1C2 (V) 20k 10 VN1 Vcc OUT FNO VD4 IF OT Fo CNI SC IN VNC 0.1 M GND E2 C1 20k 10 VP1 Vcc OUT FPO VD5 IF OT Fo CPI SC IN VPC 0.1 GND E1C2 (W) 20k 10 VN1 Vcc OUT FNO VD6 IF OT Fo CNI 0.1 IN VNC SC GND E2 Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ; * Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. * Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. * Fast switching opto-couplers: tPLH, tPHL 0.8s, Use High CMR type. * Slow switching opto-coupler: CTR > 100% * Use 6 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. * Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between C1 and E2 terminal. 6 http://store.iiic.cc/ Sep. 2010 MITSUBISHI <INTELLIGENT POWER MODULES> PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 2.5 200 Tj=25C COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (A) 180 160 140 VD=17V 120 VD=13V VD=15V 100 80 60 40 20 0 1.5 1 VD=15V 0.5 Tj=25C Tj=125C 0 0.5 1.0 1.5 2.0 0 50 100 150 200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) 200 2.5 180 Ic=200A Tj=25C VD=15V Tj=25C 160 EMITTER CURRENT IE (A) COLLECTO R-EMITTER SATURATION VOLTAGE VCEsat (V) 2 Tj=125C 2.0 1.5 Tj=125C 140 120 100 80 60 40 20 0 1.0 12 13 14 15 16 17 0 18 CONTROL VOLTAGE VD (V) 0.5 1 1.5 2 2.5 3 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 http://store.iiic.cc/ Sep. 2010 MITSUBISHI <INTELLIGENT POWER MODULES> PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) 10.0 10.0 Vcc=600V SWITCHING TIME tc(on), tc(off) (s) 1.0 ton Vcc=600V VD=15V Tj=25C Tj=125C Inductive Load Tj=25C tc(off) Tj=125C Inductive Load 1.0 tc(on) 0.1 0.1 10 100 1000 10 100 1000 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) SWITCHING ENERGY CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0.6 30 120 Vcc=600V Vcc=600V VD=15V 25 REVERSE RECOVERY TIME trr (s) SWITCHING ENERGY Eon, Eoff (mJ/pulse) VD=15V Eoff Tj=25C Tj=125C Inductive Load 20 15 10 5 Eon 0 Irr VD=15V 0.5 100 Tj=25C Tj=125C Inductive Load 0.4 80 0.3 60 0.2 40 trr 0.1 0 0 50 100 150 200 250 0 COLLECTOR CURRENT IC (A) 50 100 150 200 20 REVERSE RECOVERY CURRENT Irr (A) SWITCHING TIME ton, toff (s) toff 0 250 EMITTER CURRENT IE (A) 8 http://store.iiic.cc/ Sep. 2010 MITSUBISHI <INTELLIGENT POWER MODULES> PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE ID VS. fc CHARACTERISTICS (TYPICAL) 12 70 Vcc=600V VD=15V 10 Tj=25C Tj=25C Tj=125C Tj=125C 50 Inductive Load 8 6 40 30 4 20 2 10 0 0 0 50 100 150 200 0 250 5 10 15 20 EMITTER CURRENT IE (A) fc (kHz) UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 25 2 20 18 1.8 UVt SC (SC of Tj=25C is normalized 1) UVr 16 14 UVt / UVr (V) VD=15V 60 ID (mA) REVESE RECOVERY ENERGY Err (mJ/pulse) FREE WHEELING DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 12 10 8 6 4 VD=15V 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 2 0 0 -50 0 50 100 -50 150 Tj (C) 0 50 100 150 Tj (C) 9 http://store.iiic.cc/ Sep. 2010 MITSUBISHI <INTELLIGENT POWER MODULES> PM200DV1A120 FLAT-BASE TYPE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 1 0.1 Single Pulse 0.01 IGBT Part; Per unit base: Rth(j-c)Q=0.09 K/W FWDi Part; Per unit base: Rth(j-c)D=0.146 K/W 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 TIME t (sec) 10 http://store.iiic.cc/ Sep. 2010