SMCJ30A V7G - TAIWAN SEMICONDUCTOR MANUFACTURING

SMCJ5.0(A) - SMCJ170(A)

Taiwan Semiconductor

1 Version: R2004

1500W, 5V - 170V Surface Mount Transient Voltage Suppressor

FEATURES

● Ideal for automated placement

● Glass passivated junction

● Excellent clamping capability

● Fast response time: Typically less than

1.0ps from 0 V to BV min

● Typical IR less than 1μA above 10V

● Moisture sensitivity level: level 1, per J-STD-020

● AEC-Q101 qualified available:

ordering code with suffix “H”

● RoHS Compliant

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Immunization of sensitive devices in automotive,

telecommunications, consumer electronics, and industrial

equipment from electrostatic discharge (ESD) and transient

voltages induced by load switching and lightning.

MECHANICAL DATA

● Case：DO-214AB (SMC)

● Molding compound meets UL 94V-0 flammability rating

● Terminal：Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 2 whisker test

● Polarity：As marked

● Weight： 0.210 g (approximately)

KEY PARAMETERS

PARAMETER VALUE UNIT

VWM 5 - 170 V

VBR 6.4 - 231 V

PPK 1500 W

TJ MAX 150 °C

Package DO-214AB (SMC)

Configuration Single die

DO-214AB (SMC)

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Peak power dissipation at TA=25°C, tp=1ms(1) PPK 1500 W

Steady state power dissipation at TA=25°C PD 5 W

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load IFSM 200 A

Forward Voltage @ IF=100A for Unidirectional only (2) VF 3.5 / 5.0 V

Junction temperature TJ -55 to +150 °C

Storage temperature TSTG -55 to +150 °C

Notes:

1. Non-repetitive current pulse per Fig. 3 and derated above TA=25°C per Fig. 2

2. VF=3.5V on SMCJ5.0 - SMCJ90 devices and VF=5.0V on SMCJ100 - SMCJ170 devices

Devices for bipolar applications

1. For bidirectional use C or CA suffix for types SMCJ5.0 - types SMCJ170

2. Electrical characteristics apply in both directions

SMCJ5.0(A) - SMCJ170(A)

Taiwan Semiconductor

2 Version: R2004

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP

UNIT

Junction-to-ambient thermal resistance RӨJA 55 °C/W

Junction-to-case thermal resistance RӨJC 10 °C/W

ELECTRICAL SPECIFICATIONS

(TA = 25°C unless otherwise noted)

Part number

Marking

code

Breakdown voltage

VBR@IT

(V)

Test

current

IT

(mA)

Working

stand-off

voltage

VWM

(V)

Maximum

Reverse

Leakage

(Note 3)

IR@VWM (µA)

Maximum

peak impulse

current

(Note 2)

IPPM

(A)

Maximum

clamping

voltage

(Note 2)

VC@IPPM

(V)

MIN. MAX.

SMCJ5.0 GDD 6.4 7.3 10 5 1000 164 9.6

SMCJ5.0A GDE 6.4 7 10 5 1000 171 9.2

SMCJ6.0 GDF 6.67 8.15 10 6 1000 138 11.4

SMCJ6.0A GDG 6.67 7.37 10 6 1000 152 10.3

SMCJ6.5 GDH 7.22 8.82 10 6.5 500 128 12.3

SMCJ6.5A GDK 7.22 7.98 10 6.5 500 140 11.2

SMCJ7.0 GDL 7.78 9.51 10 7 200 118 13.3

SMCJ7.0A GDM 7.78 8.6 10 7 200 131 12.0

SMCJ7.5 GDN 8.33 10.30 1 7.5 100 110 14.3

SMCJ7.5A GDP 8.33 9.21 1 7.5 100 122 12.9

SMCJ8.0 GDQ 8.89 10.9 1 8 50 105 15.0

SMCJ8.0A GDR 8.89 9.83 1 8 50 115 13.6

SMCJ8.5 GDS 9.44 11.5 1 8.5 20 99 15.9

SMCJ8.5A GDT 9.44 10.4 1 8.5 20 109 14.4

SMCJ9.0 GDU 10 12.2 1 9 10 93 16.9

SMCJ9.0A GDV 10 11.1 1 9 10 102 15.4

SMCJ10 GDW 11.1 13.6 1 10 5 83 18.8

SMCJ10A GDX 11.1 12.3 1 10 5 92 17.0

SMCJ11 GDY 12.2 14.9 1 11 1 78 20.1

SMCJ11A GDZ 12.2 13.5 1 11 1 86 18.2

SMCJ12 GED 13.3 16.3 1 12 1 71 22.0

SMCJ12A GEE 13.3 14.7 1 12 1 79 19.9

SMCJ13 GEF 14.4 17.6 1 13 1 66 23.8

SMCJ13A GEG 14.4 15.9 1 13 1 73 21.5

SMCJ14 GEH 15.6 19.1 1 14 1 61 25.8

SMCJ14A GEK 15.6 17.2 1 14 1 67 23.2

SMCJ15 GEL 16.7 20.4 1 15 1 58 26.9

SMCJ15A GEM 16.7 18.5 1 15 1 64 24.4

SMCJ16 GEN 17.8 21.8 1 16 1 54 28.8

SMCJ16A GEP 17.8 19.7 1 16 1 60 26.0

SMCJ17 GEQ 18.9 23.1 1 17 1 51 30.5

SMCJ17A GER 18.9 20.9 1 17 1 57 27.6

SMCJ18 GES 20 24.4 1 18 1 48 32.2

SMCJ18A GET 20 22.1 1 18 1 53 29.2

SMCJ20 GEU 22.2 27.1 1 20 1 43 35.8

SMCJ20A GEV 22.2 24.5 1 20 1 48 32.4

SMCJ22 GEW 24.4 29.8 1 22 1 39 39.4

SMCJ22A GEX 24.4 26.9 1 22 1 44 35.5

SMCJ24 GEY 26.7 32.6 1 24 1 36 43.0

SMCJ24A GEZ 26.7 29.5 1 24 1 40 38.9

SMCJ26 GFD 28.9 35.3 1 26 1 33 46.6

SMCJ26A GFE 28.9 31.9 1 26 1 37 42.1

SMCJ28 GFF 31.1 38 1 28 1 31 50.0

SMCJ5.0(A) - SMCJ170(A)

Taiwan Semiconductor

3 Version: R2004

ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)

Part number

Marking

code

Breakdown voltage

VBR@IT

(V)

Test

current

IT

(mA)

Working

stand-off

voltage

VWM

(V)

Maximum

Reverse

Leakage

(Note 3)

IR@VWM (µA)

Maximum

peak impulse

current

(Note 2)

IPPM

(A)

Maximum

clamping

voltage

(Note 2)

VC@IPPM

(V)

MIN. MAX.

SMCJ28A GFG 31.1 34.4 1 28 1 34 45.4

SMCJ30 GFH 33.3 40.7 1 30 1 29 53.5

SMCJ30A GFK 33.3 36.8 1 30 1 32 48.4

SMCJ33 GFL 36.7 44.9 1 33 1 26 59.0

SMCJ33A GFM 36.7 40.6 1 33 1 29 53.3

SMCJ36 GFN 40 48.9 1 36 1 24 64.3

SMCJ36A GFP 40 44.2 1 36 1 27 58.1

SMCJ40 GFQ 44.4 54.3 1 40 1 22 71.4

SMCJ40A GFR 44.4 49.1 1 40 1 24 64.5

SMCJ43 GFS 47.8 58.4 1 43 1 20 76.7

SMCJ43A GFT 47.8 52.8 1 43 1 22 69.4

SMCJ45 GFU 50 61.1 1 45 1 19 80.3

SMCJ45A GFV 50 55.3 1 45 1 21 72.7

SMCJ48 GFW 53.3 65.1 1 48 1 18 85.5

SMCJ48A GFX 53.3 58.9 1 48 1 20 77.4

SMCJ51 GFY 56.7 69.3 1 51 1 17 91.1

SMCJ51A GFZ 56.7 62.7 1 51 1 19 82.4

SMCJ54 GGD 60 73.3 1 54 1 16 96.3

SMCJ54A GGE 60 66.3 1 54 1 18 87.1

SMCJ58 GGF 64.4 78.7 1 58 1 15 103

SMCJ58A GGG 64.4 71.2 1 58 1 16 93.6

SMCJ60 GGH 66.7 81.5 1 60 1 14 107

SMCJ60A GGK 66.7 73.7 1 60 1 16 96.8

SMCJ64 GGL 71.1 86.9 1 64 1 13.8 114

SMCJ64A GGM 71.1 78.6 1 64 1 15 103

SMCJ70 GGN 77.8 95.1 1 70 1 12.6 125

SMCJ70A GGP 77.8 86 1 70 1 13.9 113

SMCJ75 GGQ 83.3 102 1 75 1 11.7 134

SMCJ75A GGR 83.3 92.1 1 75 1 13 121

SMCJ78 GGS 86.7 106 1 78 1 11.3 139

SMCJ78A GGT 86.7 95.8 1 78 1 12.5 126

SMCJ85 GGU 94.4 115 1 85 1 10.4 151

SMCJ85A GGV 94.4 104 1 85 1 11.5 137

SMCJ90 GGW 100 122 1 90 1 9.8 160

SMCJ90A GGX 100 111 1 90 1 10.7 146

SMCJ100 GGY 111 136 1 100 1 8.8 179

SMCJ100A GGZ 111 123 1 100 1 9.7 162

SMCJ110 GHD 122 149 1 110 1 8 196

SMCJ110A GHE 122 135 1 110 1 8.9 177

SMCJ120 GHF 133 163 1 120 1 7.3 214

SMCJ120A GHG 133 147 1 120 1 8.1 193

SMCJ130 GHH 144 176 1 130 1 6.8 231

SMCJ130A GHK 144 159 1 130 1 7.5 209

SMCJ150 GHL 167 204 1 150 1 5.8 266

SMCJ150A GHM 167 185 1 150 1 6.4 243

SMCJ160 GHN 178 218 1 160 1 5.4 287

SMCJ160A GHP 178 197 1 160 1 6 259

SMCJ170 GHQ 189 231 1 170 1 5.1 304

SMCJ170A GHR 189 209 1 170 1 5.7 275

Notes:

1. VBR measure after IT applied for 300μs, IT=square wave pulse or equivalent

2. Surge current waveform per Figure. 3 and derate per Figure. 2

3. For bipolar types having VWM of 10 V and under, the IR limit is doubled

4. All terms and symbols are consistent with ANSI/IEEE C62.35

SMCJ5.0(A) - SMCJ170(A)

Taiwan Semiconductor

4 Version: R2004

ORDERING INFORMATION

ORDERING CODE

(Note 1, 2,3) PACKAGE

PACKING

SMCJxxxxHV7G SMC 850 / 7" reel

SMCJxxxxHV6G SMC 3,000 / 13" reel

SMCJxxxx V7G SMC 850 / 7" reel

SMCJxxxx V6G SMC 3,000 / 13" reel

Note 1:

"xxxx" defines voltage from 5.0V (SMCJ5.0) to 170V (SMCJ170A)

Note 2:

"H" means AEC-Q101 qualified

Note 3:

“G” means green compound (halogen free)

SMCJ5.0(A) - SMCJ170(A)

Taiwan Semiconductor

5 Version: R2004

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Fig.1 Peak Pulse Power Rating Curve

Fig.2 Pulse Derating Curve

Fig.3 Clamping Power Pulse Waveform

Fig.4 Typical Junction Capacitance

0.1

1

10

100

0.1 1 10 100 1000 10000

PPPM, PEAK PULSE POWER (KW)

tp, PULSE WIDTH (μs)

NON-REPETITIVE

PULSE WAVEFORM

SHOWN in FIG.3

0

25

50

75

100

125

0 25 50 75 100 125 150 175 200

10

100

1000

10000

100000

1 10 100

CJ, JUNCTION CAPACITANCE (pF) A

f=1.0MHz

Vsig=50mVp-p

VR=0

VR-RATED

STAND-OFF

VOLTAGE

UNIDIRECTIONAL

BIDIRECTIONAL

PEAK PULSE POWER (PPPM) OR CURRENT(IPP)

DERATING IN PERCENTAGE (%)

TA, AMBIENT TEMPERATURE (°C)

V(BR), BREAKDOWN VOLTAGE (V)

0

20

40

60

80

100

120

140

0 0.5 1 1.5 2 2.5 3

IPPM, PEAK PULSE CURRENT (%)

t, TIME (ms)

td

Peak value

IPPM

Rise time tr=10μs to 100%

Half value-IPPM/2

Pulse width(td) is defined

as the point where the peak

current decays to 50% of IPPM

10/1000μs, waveform

SMCJ5.0(A) - SMCJ170(A)

Taiwan Semiconductor

6 Version: R2004

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Fig.5 Maximum Non-repetitive Forward Surge Current

IFSM, PEAK FORWARD SURGE CURRENT (A)

10

100

1000

1 10 100

NUMBER OF CYCLES AT 60 Hz

8.3ms Single Half Sine Wave

UNIDIRECTIONAL ONLY

SMCJ5.0(A) - SMCJ170(A)

Taiwan Semiconductor

7 Version: R2004

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)

DO-214AB (SMC)

SUGGESTED PAD LAYOUT

MARKING DIAGRAM

SMC(1)

P/N

= Marking Code

G

= Green Compound

YW

= Date Code

F

= Factory Code

Note(1): Cathode band for unidirectional products only

SMCJ5.0(A) - SMCJ170(A)

Taiwan Semiconductor

8 Version: R2004

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

assumes no responsibility or liability for any errors or inaccuracies.

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability

for application assistance or the design of Purchasers’ products.

Information contained herein is intended to provide a product description only. No license, express or implied, to

any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of

sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,

merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.