LESHAN RADIO COMPANY, LTD.
MMUN2211LT1 Series
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
R1
R2
MARKING DIAGRAM
A6x M
A6 x = Device Marking
x = A – L(See Page 2)
M = Date Code
1
3
2
CASE 318, STYLE 6
SOT–23 (TO–236AB)
MMUN2211LT1
SERIES
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space and Component Count
The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the Device
Number to order the 7 inch/3000 unit reel. Replace “T1” with
“T3” in the Device Number to order the13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
Total Power Dissipation @ TA = 25°C
(Note 1.) Derate above 25°CPD*200
1.6 mW
mW/°C
DEVICE MARKING AND RESISTOR VALUES
Device Marking R1(K) R2(K)
MMUN2211LT1 A8A 10 10
MMUN2212LT1 A8B 22 22
MMUN2213LT1 A8C 47 47
MMUN2214LT1 A8D 10 47
MMUN2215LT1 A8E 10
MMUN2216LT1 A8F 4.7
MMUN2230LT1 A8G 1.0 1.0
MMUN2231LT1 A8H 2.2 2.2
MMUN2232LT1 A8J 4.7 4.7
MMUN2233LT1 A8K 4.7 47
MMUN2234LT1 A8L 22 47
MMUN2235LT1 A8M 2.2 47
MMUN2238LT1 A8R 2.2
MMUN2241LT1 A8U 100
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
Device Package Shipping
ORDERING INFORMATION
MMUN2211LT1 SOT–23 3000/Tape & Reel
MMUN2212LT1 SOT–23 3000/Tape & Reel
MMUN2213LT1 SOT–23 3000/Tape & Reel
MMUN2214LT1 SOT–23 3000/Tape & Reel
MMUN2215LT1 SOT–23 3000/Tape & Reel
MMUN2216LT1 SOT–23 3000/Tape & Reel
MMUN2230LT1 SOT–23 3000/Tape & Reel
MMUN2231LT1 SOT–23 3000/Tape & Reel
MMUN2232LT1 SOT–23 3000/Tape & Reel
MMUN2233LT1 SOT–23 3000/Tape & Reel
MMUN2234LT1 SOT–23 3000/Tape & Reel
MMUN2235LT1 SOT–23 3000/Tape & Reel
MMUN2238LT1 SOT–23 3000/Tape & Reel
MMUN2241LT1 SOT–23 3000/Tape & Reel
MMUN2211S
-
1/11
LESHAN RADIO COMPANY, LTD.
MMUN2211S–2/11
MMUN2211LT1 Series
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance – Junction-to-Ambient (surface mounted) RθJA 625 °C/W
Operating and Storage Temperature Range TJ, Tstg –65 to +150 °C
Maximum Temperature for Soldering Purposes,
Time in Solder Bath TL260
10 °C
Sec
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO 500 nAdc
Emitter-Base Cutoff Current MMUN2211LT1
(VEB = 6.0 V, IC = 0)MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
IEBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
4.0
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 Vdc
Collector-Emitter Breakdown Voltage (Note 2.), (IC = 2.0 mA, IB = 0) V(BR)CEO 50 Vdc
ON CHARACTERISTICS (Note 2.)
DC Current Gain MMUN2211LT1
(VCE = 10 V, IC = 5.0 mA)MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
hFE 35
60
80
80
160
160
3.0
8.0
15
80
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
140
350
350
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1
(IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/
MMUN2235LT1/MMUN2238LT1
VCE(sat) 0.25 Vdc
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
LESHAN RADIO COMPANY, LTD.
MMUN2211S–3/11
MMUN2211LT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 3.)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k )MMUN2211LT1
MMUN2212LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k )MMUN2213LT1
(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k )MMUN2241LT1
VOL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k )
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k )MMUN2230LT1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k )MMUN2215LT1
MMUN2216LT1
MMUN2233LT1
MMUN2238LT1
VOH 4.9 Vdc
Input Resistor MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
R17.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
1.54
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
2.2
100
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
2.88
130
k
Resistor Ratio MMUN2211LT1/MMUN2212LT1/MMUN2213LT1
MMUN2214LT1
MMUN2215LT1/MMUN2216LT1/MMUN2238LT1
MMUN2241LT1
MMUN2230LT1/MMUN2231LT1/MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
R1/R20.8
0.17
0.8
0.055
0.38
0.038
1.0
0.21
1.0
0.1
0.47
0.047
1.2
0.25
1.2
0.185
0.56
0.056
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
LESHAN RADIO COMPANY, LTD.
MMUN2211S–4/11
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
100
10
1
0.1
0.01
0.001 01234
Vin, INPUT VOLTAGE (VOLTS)
5678910
VO = 5 V
IC, COLLECTOR CURRENT (mA)
TA = –25°C
75°C25°C
1000
100
101 10 100
IC, COLLECTOR CURRENT (mA) 50
010203040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 A
TA = 25°C
VCE = 10 V
Figure 1. Derating Curve
250
200
150
100
50
0
–50 0 50 100 150
TA, AMBIENT TEMPERATURE (5°C)
Figure 2. VCE(sat) vs. IC
PD, POWER DISSIPATION (MILLIWATTS)
Cob, CAPACITANCE (pF)
hFE, DC CURRENT GAIN (NORMALIZED)
RθJA= 625°C/W
TA = 75°C
–25°C
25°C
1002030
IC, COLLECTOR CURRENT (mA)
10
1
0.1 40 50
Figure 3. DC Current Gain
Vin, INPUT VOLTAGE (VOLTS)
TA = –25°C
75°C
25°C
VO = 0.2 V
1
0.1
0.01
0.00102040608
0
IC, COLLECTOR CURRENT (mA)
IC/IB = 10
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TA = –25°C
75°C
25°C
Figure 4. Output Capcitance
Figure 5. Output Current vs. Input Voltage Figure 6. Input Voltage vs. Output Current
LESHAN RADIO COMPANY, LTD.
MMUN2211S–5/11
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212LT1
Figure 7. VCE(sat) vs. IC
0.001
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
020 6080
IC/IB = 10
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TA = –25°C25°C
75°C
Figure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
101 100
VCE = 10 V
hFE, DC CURRENT GAIN (NORMALIZED)
TA = 75°C
25°C–25°C
Cob, CAPACITANCE (pF)
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
100
0Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001 246810
0
IC, COLLECTOR CURRENT (mA)
100
10
1
0.1 10 20 30 40 50
Figure 11. Input Voltage vs. Output Current
50
010203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 A
TA = 25°C
VO = 5 V
VO = 0.2 V
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (VOLTS)
TA = –25°C
75°C 25°C
TA = –25°C
75°C25°C
LESHAN RADIO COMPANY, LTD.
MMUN2211S–6/11
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2213LT1
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
Figure 12. VCE(sat) vs. IC
0 204060 80
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
IC/IB = 10 TA = –25°C
75°C
25°C
Figure 13. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
101 100
VCE = 10 V
hFE, DC CURRENT GAIN (NORMALIZED)
TA = 75°C
–25°C
25°C
Figure 14. Output Capacitance
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 A
TA = 25°C
Cob, CAPACITANCE (pF)
024681
0
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
Figure 15. Output Current vs. Input Voltage
VO = 5 V
IC, COLLECTOR CURRENT (mA)
TA = –25°C
75°C25°C
TA = –25°C
75°C25°C
100
10
1
0.1 010 20304050
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage vs. Output Current
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
75°C
TA = –25°C25°C
LESHAN RADIO COMPANY, LTD.
MMUN2211S–7/11
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214LT1
Figure 17. VCE(sat) vs. IC
IC, COLLECTOR CURRENT (mA)
020406080
1
0.1
0.01
0.001
IC/IB = 10 TA = –25°C
25°C
75°C
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
VCE = 10
300
250
200
150
100
50
02 4 6 8 15 20 40 50 60 70 80 90
hFE, DC CURRENT GAIN (NORMALIZED)
25°C
TA = 75°C
–25°C
4
3.5
3
2.5
2
1.5
1
0.5
0024681015
20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
f = 1 MHz
lE = 0 A
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
100
10
10246810
Figure 20. Output Current vs. Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
VO = 5 V
TA = –25°C
75°C 25°C
10
1
0.101020304050
Figure 21. Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
TA = –25°C
75°C
25°C
LESHAN RADIO COMPANY, LTD.
MMUN2211S–8/11
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2232LT1
TA = 75°C
IC/IB =10
12
1
0.1
0.001 168420
IC, COLLECTOR CURRENT (mA)
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
0.01
24 28
–25°C25°C
Figure 22. VCE(sat) vs. ICFigure 23. DC Current Gain
VCE = 10 V
0
1000
100
25 50
10
100
175
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
TA = 75°C
–25°C25°C
125
Figure 24. Output Capacitance Figure 25. Output Current vs. Input Voltage
f = 1 MHz
IE = 0 A
TA = 25°C
0
100
10
246
1
0.1
0.01 80
4
3
20
2
1
0
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
10 60504030
5
6VO = 5 V
75°C
TA = –25°C
25°C
Figure 26. Output Voltage vs. Input Current
VO = 0.2 V
0
10
10 20 30
1
0.1
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (VOLTS)
TA = –25°C
75°C
25°C
LESHAN RADIO COMPANY, LTD.
MMUN2211S–9/11
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2233LT1
75°C
TA = –25°C
Figure 27. VCE(sat) vs. IC
25°C
IC/IB = 10
12
1
0.1
0.001 177222
IC, COLLECTOR CURRENT (mA)
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
0.01
27 32
Figure 28. DC Current Gain
VCE = 10 V
1
1000
100
10
110
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
TA = –25°C
100
75°C25°C
Figure 29. Output Capacitance
f = 1 MHz
IE = 0 A
TA = 25°C
0
0.5
3
20
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
10 60504030
3.5
4
1.5
2.5
Figure 30. Output Current vs. Input Voltage
0
100
10
28
1
0.1
0.01 46
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
VO = 5 V
TA = –25°C
75°C
25°C
Figure 31. Input Voltage vs. Output Current
VO = 0.2 V
0
10
12 18 30
1
0.1
IC, COLLECTOR CURRENT (mA)
TA = –25°C
624
75°C
25°C
Vin, INPUT VOLTAGE (VOLTS)
LESHAN RADIO COMPANY, LTD.
MMUN2211S–10/11
MMUN2211LT1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
LOAD
+12 V
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
IN
OUT
VCC
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
+12 V
Figure 33. Open Collector Inverter: Inverts
the Input Signal Figure 34. Inexpensive, Unregulated Current Source