Bulletin I27259 rev. A 11/06 IRKCS408/060P SCHOTTKY RECTIFIER 400 Amp Description/ Features (1) The IRKCS408.. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, free-wheeling diodes, welding, and reverse battery protection. + (2) 150C TJ operation Low forward voltage drop High frequency operation (3) Guard ring for enhanced ruggedness and long term reliability UL pending TOTALLY LEAD-FREE, RoHS Compliant Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 400 A VRRM 60 V 25500 A 0.69 V - 55 to 150 C waveform IFSM @ tp = 5 s sine VF @ 200Apk, TJ=125C TJ range www.irf.com Outline TO-240AA 1 IRKCS408/060P Bulletin I27259 rev. A 11/06 Voltage Ratings Parameters VR IRKCS408/060P Max. DC Reverse Voltage (V) 60 VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Values Units Per Module Current IFSM 400 Per Leg Conditions A 50% duty cycle @ TC = 83 C, rectangular wave form A 5s Sine or 3s Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied 200 Max. Peak One Cycle Non-Repetitive 25500 Surge Current 3300 EAS Non-Repetitive Avalanche Energy 15 mJ IAR Repetitive Avalanche Current 1 A TJ = 25 C, IAS = 5.5 Amps, L = 1mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM IRM Values Units Max. Forward Voltage Drop (1) Max. Reverse Leakage Current (1) Conditions 0.71 1.03 0.69 V V V @ 200A @ 400A @ 200A 0.96 V @ 400A 2.2 mA TJ = 25 C 650 mA TJ = 125 C TJ = 25 C TJ = 125 C VR = rated VR CT Max. Junction Capacitance 11000 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25C LS Typical Series Inductance 5.0 nH From top of terminal hole to mounting plane dv/dt Max. Voltage Rate of Change VINS 10000 RMS isolation voltage (1 sec) 3500 V/ s (Rated VR) V 50 Hz, circuit to base, all terminals shorted (1) Pulse Width < 500s Thermal-Mechanical Specifications Parameters Values Units TJ Max. Junction Temperature Range -55 to 150 Tstg Max. Storage Temperature Range -55 to 150 Conditions C C RthJC Max. Thermal Resistance, Junction to Case (Per Leg) 0.3 C/W DC operation RthCS Max. Thermal Resistance, case to Heatsink 0.1 C/W Mounting Surface, smooth and greased wt T Approximate Weight Mounting Torque 10% Case Style 2 to heatsink busbar 110 (4) gr (oz) 5 Nm 4 TO - 240AA JEDEC www.irf.com IRKCS408/060P Bulletin I27259 rev. A 11/06 1000 10000 150C Reverse Current - IR (mA) 100 1000 125C 100 10 25C 1 0.1 0.01 0 10 20 30 40 50 Reverse Voltage - VR (V) 60 Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 100000 10 Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) Tj = 150C Tj = 125C Tj = 25C 1 10000 1000 0.0 0.5 1.0 1.5 2.0 Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics 0 10 20 30 40 50 60 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Impedance ZthJC (C/W) 1 D = 0.75 D = 0.5 0.1 D = 0.33 D = 0.25 D = 0.2 Single Pulse (Thermal Resistance) 0.01 0.001 1E-05 1E-04 1E-03 1E-02 1E-01 t1, Rectangular Pulse Duration (Seconds) 1E+00 1E+01 Fig. 4 - Max. Thermal Impedance ZthJC Characteristics www.irf.com 3 IRKCS408/060P Bulletin I27259 rev. A 11/06 250 Square wave (D=0.50) 80% rated Vr applied 140 Average Power Loss - (Watts) Allowable Case Temperature (C) 160 120 DC 100 80 60 40 20 0 see note (2) 0 100 200 300 400 200 150 RMS Limit 50 0 50 Average Forward Current - IF(AV) (A) 100 150 200 250 300 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Non-Repetitive Surge Current - IFSM (A) DC 100 0 500 180 120 90 60 30 Fig. 6 - Forward Power Loss Characteristics 100000 10000 1000 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge 100 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Max. Non-Repetitive Surge Current L IRFP460 DUT Rg = 25 ohm CURRENT MONITOR HIGH-SPEED SWITCH FREE-WHEEL DIODE + Vd = 25 Volt 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com IRKCS408/060P Bulletin I27259 rev. A 11/06 Outline Table Dimensions are in millimeters and [inches] Ordering Information Table Device Code IR KC S 40 8 1 2 3 4 5 / 060 P 6 7 1 - International Rectifier 2 - Circuit Configuration 3 - S = Schottky Diode 4 - Average Rating (x10) 5 - Product Silicon Identification 6 - Voltage Rating (060 = 60V) 7 - Lead-Free KC = Add-A-Pak - 2 diodes/common cathode www.irf.com 5 IRKCS408/060P Bulletin I27259 rev. A 11/06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 11/06 6 www.irf.com