Semiconductor Group 1
PNP Silicon AF Transistors BC 636
… BC 640
5.91
Type Ordering CodeMarking Package1)
Pin Configuration
BC 636
BC 638
BC 640
Q68000-A3365
Q68000-A3366
Q68000-A3367
– TO-92
E C B
123
If desired, selected transistors, type BC 6 ★★ –10 (hFE = 63 … 160), or BC 6 ★★ –16
(hFE = 100 … 250) are available. Ordering codes upon request.
1) For detailed information see chapter Package Outlines.
●High current gain
●High collector current
●Low collector-emitter saturation voltage
●Complementary types: BC 635, BC 637,
BC 639 (NPN)
1
23
Semiconductor Group 2
BC 636
… BC 640
Maximum Ratings
Parameter Values Unit
Collector-emitter voltage V
Peak collector current
Collector current A
Junction temperature ˚C
Total power dissipation, TC = 90 ˚C1) W
Storage temperature range
Collector-base voltage
Thermal Resistance
Junction - ambient1) ≤ 156 K/W
60
1
1.5
0.8 (1)
150
– 65 … + 150
Emitter-base voltage
Base current mA100
Junction - case2) ≤ 55
45 80
6045 100
BC 638BC 636 BC 640
5
Peak base current 200
Symbol
VCE0
ICM
IC
Tj
Ptot
Tstg
VCB0
Rth JA
VEB0
IB
Rth JC
IBM
1) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area
for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group 3
BC 636
… BC 640
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain
I
C = 5 mA; VCE = 2 V
I
C = 150 mA; VCE = 2 V1)
I
C = 500 mA; VCE = 2 V1)
VCollector-emitter breakdown voltage
I
C = 10 mA BC 636
BC 638
BC 640
V(BR)CE0
45
60
80
–
–
–
–
–
–
nA
µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0 –
––
–100
20
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 100 µABC 636
BC 638
BC 640
V(BR)CB0
45
60
100
–
–
–
–
–
–
Emitter-base breakdown voltage
I
E = 10 µAV(BR)EB0 5––
mV
Collector-emitter saturation voltage1)
I
C = 500 mA; IB = 50 mA VCEsat – – 500
–hFE 25
40
25
–
–
–
–
250
–
V
Base-emitter voltage1)
I
C = 500 mA; VCE = 2 V VBE ––1
nAEmitter cutoff current
VEB = 4 V IEB0 – – 100
AC characteristics
MHzTransition frequency
I
C = 50 mA, VCE = 10 V, f = 20 MHz fT– 100 –
1) Pulse test: t≤300 µs, D≤ 2%.
Semiconductor Group 4
BC 636
… BC 640
Total power dissipation Ptot =f(TA;TC)
Permissible pulse load RthJA =f(tp)
Collector cutoff current ICB0 =f(TA)
VCB = 30 V
Collector current IC=f(VBE)
VCE = 2 V
Semiconductor Group 5
BC 636
… BC 640
DC current gain hFE =f(IC)
VCE = 2 V
Transition frequency fT=f(IC)
Collector-emitter saturation voltage
VCEsat =f(IC)
hFE = 10
