NTMFS4C020NT1G - ON SEMICONDUCTOR

November, 2019 − Rev. 4

1Publication Order Number:

NTMFS4C020N/D

MOSFET – Power, Single,

N-Channel, Logic Level,

SO-8FL

30 V, 0.67 mW, 370 A

NTMFS4C020N

Features

•Small Footprint (5x6 mm) for Compact Design

•Low RDS(on) to Minimize Conduction Losses

•Low QG and Capacitance to Minimize Driver Losses

•Optimized for 4.5 Gate Drive

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 30 V

Gate−to−Source Voltage VGS "20 V

Continuous Drain Cur-

rent RqJC (Notes 1, 3) Steady

State

TC = 25°C ID370 A

Power Dissipation

RqJC (Notes 1, 3)

TC = 25°C PD161 W

Continuous Drain Cur-

rent RqJA (Notes 1, 2,

3) Steady

State

TA = 25°C ID57 A

Power Dissipation

RqJA (Notes 1, 2, 3)

TA = 25°C PD3.84 W

Pulsed Drain Current TA = 25°C, tp = 10 msIDM 900 A

Operating Junction and Storage Temperature TJ, Tstg −55 to

150

°C

Source Current (Body Diode) IS110 A

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 35 A)

EAS 862 mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter Symbol Value Unit

Junction−to−Case − Steady State RqJC 0.93 °C/W

Junction−to−Ambient − Steady State (Note 2) RqJA 39

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING

DIAGRAM

www.onsemi.com

V(BR)DSS RDS(ON) MAX ID MAX

30 V

0.67 mW @ 10 V

370 A

0.78 mW @ 6.5 V

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5)

Device Package Shipping†

ORDERING INFORMATION

NTMFS4C020NT1G SO−8 FL

(Pb−Free)

1500 /

Tape & Reel

NTMFS4C020NT3G SO−8 FL

(Pb−Free)

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

A = Assembly Location

Y = Year

W = Work Week

ZZ = Lot Traceability

4C020N

AYWZZ

0.95 mW @ 4.5 V

NTMFS4C020N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

16.3 mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

VDS = 24 V

TJ = 25 °C 1

TJ = 125°C 100

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.3 2.2 V

Negative Threshold Temperature Coefficient VGS(TH)/TJ5.8 mV/°C

Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 0.56 0.67

VGS = 6.5 V ID = 30 A 0.56 0.78

VGS = 4.5 V ID = 30 A 0.76 0.95

Forward Transconductance gFS VDS = 3 V, ID = 30 A 183 S

Gate Resistance RGTA = 25 °C 1.0 2.5 W

CHARGES AND CAPACITANCES

Input Capacitance CISS

VGS = 0 V, f = 1 MHz, VDS = 15 V

10144 15250

Output Capacitance COSS 5073 7610

Reverse Transfer Capacitance CRSS 148 350

Total Gate Charge QG(TOT)

VGS = 4.5 V, VDS = 15 V; ID = 30 A

63 105

Threshold Gate Charge QG(TH) 18 36

Gate−to−Source Charge QGS 29 58

Gate−to−Drain Charge QGD 13 26

Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V,

ID = 30 A

139 230 nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time td(ON)

VGS = 4.5 V, VDS = 15 V, ID = 15 A,

RG = 3.0 W

Rise Time tr68

Turn−Off Delay Time td(OFF) 53

Fall Time tf36

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V,

IS = 10 A

TJ = 25°C 0.73 1.1

TJ = 125°C 0.55

Reverse Recovery Time tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

Charge Time ta43

Discharge Time tb44

Reverse Recovery Charge QRR 147 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

NTMFS4C020N

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)

2.8 V

3.0 V

3.2 V

3.4 V

3.6 V

VGS = 2.6 V

VDS = 3 V

TJ = 25°C

TJ = −55°C

TJ = 150°C

ID = 30 A

RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)

TJ = 25°C

VGS = 10 V

VGS = 4.5 V

TJ = 25°C

100

150

200

250

300

350

400

0.0 0.5 1.0 1.5 2.0 2.5 3.0

4.5 V

10 V

100

150

200

250

300

350

400

1.5 2 2.5 3 3.5 4

0.5

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

345678910 0.5

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

0 50 100 150 200 250 300 350 400

0.6 0.6

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

1251007550250−25−50

0.6

0.8

1.4

1.8

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

RDS(on), NORMALIZED DRAIN−TO−

SOURCE RESISTANCE (W)

IDSS, LEAKAGE (nA)

175

1.0

1.2

1.6

VGS = 10 V

ID = 30 A

150

TJ = 85°C

TJ = 125°C

TJ = 100°C

100

1000

10000

100000

0 5 10 15 20 25 30

NTMFS4C020N

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

10.1

100

10k

100k

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

QG, TOTAL GATE CHARGE (nC)

RG, GATE RESISTANCE (W)

140200

1001010.1

1000

C, CAPACITANCE (pF)

VGS, GATE−TO−SOURCE VOLTAGE (V)

t, TIME (ns)

10 100

100

Figure 10. Diode Forward Voltage vs. Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

1.00.80.60.40.3

0.1

100

1000

IS, SOURCE CURRENT (A)

VDS = 15 V

ID = 30 A

TJ = 25°C

QGS QGD

VGS = 0 V

TJ = 25°C

f = 1 MHz CRSS

COSS

CISS

40 60 80 100 120

VDS VGS

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = 4.5 V

VDD = 15 V

ID = 15 A

td(off)

td(on)

trtf

0.5 0.7 0.9

TJ = 25°CTJ = −55°C

TJ = 150°C

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

1001010.1

100

1000

ID, DRAIN CURRENT (A)

RDS(on) Limit

Thermal Limit

Package Limit

10 ms

100 ms

1 ms

10 ms

VGS ≤ 10 V

TC = 25°C

NTMFS4C020N

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 12. Thermal Impedance (Junction−to−Ambient)

t, TIME (s)

0.010.0010.00010.000010.000001

0.001

0.1

100

R(t) (°C/W)

0.1 1 10 100 1000

Single Pulse

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

0.01

RqJA = Steady State = 39°C/W

PCB Cu Area = 650 mm2

PCB Cu Thk = 2 oz

Figure 13. Avalanche Characteristics

TIME IN AVALANCHE (s)

1.00E−021.00E−03

IPEAK, (A)

1.00E−04

1000

TJ(initial) = 25°C

TJ(initial) = 100°C

100

NTMFS4C020N

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PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)

CASE 488AA

ISSUE N

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

M3.00 3.40

q0 −−−

3.80

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE

MOLD FLASH PROTRUSIONS OR GATE

BURRS.

1234

TOP VIEW

SIDE VIEW

BOTTOM VIEW

E1 q

0.20 C

2 X

DIM MIN NOM

MILLIMETERS

A0.90 1.00

A1 0.00 −−−

b0.33 0.41

c0.23 0.28

D5.15

D1 4.70 4.90

D2 3.80 4.00

E6.15

E1 5.70 5.90

E2 3.45 3.65

e1.27 BSC

G0.51 0.575

K1.20 1.35

L0.51 0.575

L1 0.125 REF

0.10 C

DETAIL A

e/2

A0.10 B

0.05 c L

DETAIL A

4 X

SEATING

PLANE

MAX

1.10

0.05

0.51

0.33

5.10

4.20

6.10

3.85

0.71

1.50

0.71

PIN 5

(EXPOSED PAD)

5.00 5.30

6.00 6.30

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.270

0.750

1.000

0.905

4.530

1.530

4.5600.495

3.200

1.330

0.965

PITCH

DIMENSIONS: MILLIMETERS

RECOMMENDED

0.475

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