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TSZ22111 • 14 • 001
TSZ02201-0RAR1G200160-1-2
13.Feb.2015 Rev.002
Operational Amplifiers
Ground Sense Low Voltage Operation
CMOS Operational Amplifiers
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
General Description
BU7441G/BU7442xxx/BU7444F are input ground
sense, output full swing CMOS operational
amplifiers. BU7441SG/BU7442Sxxx/BU7444SF
have an expanded operating temperature range.
They have the features of low operating supply
voltage, low supply current and low input bias
current. They are suitable for portable equipment
and sensor amplifiers.
Features
Low Supply Current
Low Operating Supply Voltage
Wide Temperature Range
Low Input Bias Current
Applications
Sensor Amplifier
Portable Equipment
Consumer Equipment
Key Specifications
Operating Supply Voltage: +1.7V to +5.5V
Supply Current: 50µA/ch (Typ)
Temperature Range:
BU7441G/BU7442xxx/BU7444F
-40°C to +85°C
BU7441SG/BU7442Sxxx/BU7444SF
jj-40°C to +105°C
Input Offset Current: 1pA (Typ)
Input Bias Current: 1pA (Typ)
Packages
W(Typ) x D(Typ) x H(Max)
SSOP5 2.90mm x 2.80mm x 1.15mm
SOP8 5.00mm x 6.20mm x 1.61mm
MSOP8 2.90mm x 4.00mm x 0.83mm
VSON008X2030 2.00mm x 1.50mm x 0.60mm
SOP14 8.70mm x 6.20mm x 1.61mm
Simplified Schematic
Figure 1. Simplified Schematic (1 channel only)
○Product structure：Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays
VDD
VSS
IN+
Vbias
IN-
OUT
Class
AB control
Vbias
Datashee
t
Datasheet
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BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Pin Configuration
BU7441G, BU7441SG : SSOP5
BU7442F, BU7442SF : SOP8
BU7442FVM, BU7442SFVM : MSOP8
BU7442NUX, BU7442SNUX : VSON008X2030
BU7444F, BU7444SF : SOP14
Package
SSOP5
SOP8
MSOP8
VSON008X2030
SOP14
BU7441G
BU7441SG
BU7442F
BU7442SF
BU7442FVM
BU7442SFVM
BU7442NUX
BU7442SNUX
BU7444F
BU7444SF
Pin No.
Pin Name
1
IN+
2
VSS
3
IN-
4
OUT
5
VDD
Pin No.
Pin Name
1
OUT1
2
IN1-
3
IN1+
4
VSS
5
IN2+
6
IN2-
7
OUT2
8
VDD
Pin No.
Pin Name
1
OUT1
2
IN1-
3
IN1+
4
VDD
5
IN2+
6
IN2-
7
OUT2
8
OUT3
9
IN3-
10
IN3+
11
VSS
12
IN4+
13
IN4-
14
OUT4
CH1
-
+
CH4
-
+
CH3
CH2
-
+
-
+
1
2
3
4
14
13
12
11
5
6
7
10
9
8
IN1+
IN1-
OUT1
VDD
IN2+
IN2-
OUT2
VSS
OUT3
IN4+
IN4-
IN3+
IN3-
OUT4
－
＋
－
－
＋
－
＋
＋
VSS
VDD
OUT
IN-
IN+
1
-
+
2
3
4
5
+
CH2
-
+
CH1
-
+
1
2
3
4
8
7
6
5
OUT2
VSS
VDD
OUT1
IN1-
IN1+
IN2+
IN2-
Datasheet
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Ordering Information
B
U
7
4
4
x
x
x
x
x
-
x x
Part Number
BU7441G
BU7441SG
BU7442xxx
BU7442Sxxx
BU7444F
BU7444SF
Package
G :ISSOP5
F : SOP8
F : SOP14
FVM : MSOP8
NUX : VSON008X2030F
Packaging and forming specification
E2: Embossed tape and reel
(SOP8/SOP14)
TR: Embossed tape and reel
(SSOP5/MSOP8/VSON008X2030)
Line-up
Topr
Channels
Package
Orderable Part Number
-40°C to +85°C
1ch
SSOP5
Reel of 3000
BU7441G-TR
2ch
SOP8
Reel of 2500
BU7442F-E2
MSOP8
Reel of 3000
BU7442FVM-TR
VSON008X2030
Reel of 4000
BU7442NUX-TR
4ch
SOP14
Reel of 2500
BU7444F-E2
-40°C to +105°C
1ch
SSOP5
Reel of 3000
BU7441SG-TR
2ch
SOP8
Reel of 2500
BU7442SF-E2
MSOP8
Reel of 3000
BU7442SFVM-TR
VSON008X2030
Reel of 4000
BU7442SNUX-TR
4ch
SOP14
Reel of 2500
BU7444SF-E2
Datasheet
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13.Feb.2015 Rev.002
Absolute Maximum Ratings(TA=25°C)
Parameter
Symbol
Rating
Unit
BU7441G
BU7442xxx
BU7444F
Supply Voltage
VDD-VSS
+7
V
Power Dissipation
PD
SSOP5
0.54 (Note1,6)
-
-
W
SOP8
-
0.55 (Note2,6)
-
MSOP8
-
0.47 (Note3,6)
-
VSON008X2030
-
0.41 (Note4,6)
-
SOP14
-
-
0.45 (Note5,6)
Differential Input Voltage(Note 7)
VID
VDD - VSS
V
Input Common-mode
Voltage Range
VICM
(VSS-0.3) to (VDD+0.3)
V
Input Current(Note 8)
II
±10
mA
Operating Supply Voltage
Vopr
+1.7V to +5.5V
V
Operating Temperature
Topr
-40 to +85
°C
Storage Temperature
Tstg
-55 to +125
°C
Maximum Junction Temperature
TJmax
+125
°C
(Note 1) To use at temperature above TA=25C reduce 5.4mW/°C.
(Note 2) To use at temperature above TA=25C reduce 5.5mW/°C.
(Note 3) To use at temperature above TA=25C reduce 4.7mW/°C.
(Note 4) To use at temperature above TA=25C reduce 4.1mW/°C.
(Note 5) To use at temperature above TA=25C reduce 4.5mW/°C.
(Note 6) Mounted on a FR4 glass epoxy PCB 70mm×70mm×1.6mm (Copper foil area less than 3%).
(Note 7) The voltage difference between inverting input and non-inverting input is the differential input voltage.
Then input terminal voltage is set to more than VSS.
(Note 8) An excessive input current will flow when input voltages of more than VDD+0.6V or less than VSS-0.6V are applied.
The input current can be set to less than the rated current by adding a limiting resistor.
Caution: Operating the IC over the absolute maximum ratings may damage the IC. In addition, it is impossible to predict all destructive situations such as
short-circuit modes, open circuit modes, etc. Therefore, it is important to consider circuit protection measures, like adding a fuse, in case the IC is
operated in a special mode exceeding the absolute maximum ratings.
Parameter
Symbol
Rating
Unit
BU7441SG
BU7442Sxxx
BU7444SF
Supply Voltage
VDD-VSS
+7
V
Power Dissipation
PD
SSOP5
0.54 (Note9,14)
-
-
W
SOP8
-
0.55 (Note10,14)
-
MSOP8
-
0.47 (Note11,14)
-
VSON008X2030
-
0.41 (Note12,14)
-
SOP14
-
-
0.45 (Note13,14)
Differential Input Voltage(Note 15)
VID
VDD - VSS
V
Input Common-mode
Voltage Range
VICM
(VSS-0.3) to (VDD+0.3)
V
Input Current(Note 16)
II
±10
mA
Operating Supply Voltage
Vopr
+1.7V to +5.5V
V
Operating Temperature
Topr
-40 to +105
°C
Storage Temperature
Tstg
-55 to +125
°C
Maximum Junction Temperature
TJmax
+125
°C
(Note 9) To use at temperature above TA=25C reduce 5.4mW/°C.
(Note 10) To use at temperature above TA=25C reduce 5.5mW/°C.
(Note 11) To use at temperature above TA=25C reduce 4.7mW/°C.
(Note 12) To use at temperature above TA=25C reduce 4.1mW/°C.
(Note 13) To use at temperature above TA=25C reduce 4.5mW/°C.
(Note 14) Mounted on a FR4 glass epoxy PCB 70mm×70mm×1.6mm (Copper foil area less than 3%).
(Note 15) The voltage difference between inverting input and non-inverting input is the differential input voltage.
Then input terminal voltage is set to more than VSS.
(Note 16) An excessive input current will flow when input voltages of more than VDD+0.6V or less than VSS-0.6V are applied.
The input current can be set to less than the rated current by adding a limiting resistor.
Caution: Operating the IC over the absolute maximum ratings may damage the IC. In addition, it is impossible to predict all destructive situations such as
short-circuit modes, open circuit modes, etc. Therefore, it is important to consider circuit protection measures, like adding a fuse, in case the IC is
operated in a special mode exceeding the absolute maximum ratings.
Datasheet
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BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Electrical Characteristics
○BU7441G, BU7441SG（Unless otherwise specified VDD=+3V, VSS=0V, TA=25°C)
Parameter
Symbol
Temperature
Range
Limit
Unit
Conditions
Min
Typ
Max
Input Offset Voltage (Note 17)
VIO
25°C
-
1
6
mV
-
Input Offset Current (Note 17)
IIO
25°C
-
1
-
pA
-
Input Bias Current (Note 17)
IB
25°C
-
1
-
pA
-
Supply Current (Note 18)
IDD
25°C
-
50
120
μA
RL=∞
AV=0dB, IN+=0.9V
Full range
-
-
240
Maximum Output Voltage(High)
VOH
25°C
VDD-0.1
-
-
V
RL=10kΩ
Maximum Output Voltage(Low)
VOL
25°C
-
-
VSS+0.1
V
RL=10kΩ
Large Signal Voltage Gain
AV
25°C
70
95
-
dB
RL=10kΩ
Input Common-mode
Voltage Range
VICM
25°C
0
-
1.8
V
VSS to VDD-1.2V
Common-mode
Rejection Ratio
CMRR
25°C
45
60
-
dB
-
Power Supply
Rejection Ratio
PSRR
25°C
60
80
-
dB
-
Output Source Current (Note 19)
ISOURCE
25°C
3
6
-
mA
VDD-0.4V
Output Sink Current (Note 19)
ISINK
25°C
5
10
-
mA
VSS+0.4V
Slew Rate
SR
25°C
-
0.3
-
V/μs
CL=25pF
Gain Bandwidth
GBW
25°C
-
0.6
-
MHz
CL=25pF, AV=40dB
Phase Margin
θ
25°C
-
50
-
deg
CL=25pF, AV=40dB
Total Harmonic Distortion +
Noise
THD+N
25°C
-
0.05
-
%
OUT=0.8VP-P
f=1kHz
(Note 17) Absolute value
(Note 18) Full range: BU7441G: TA=-40°C to +85°C, BU7441SG: TA=-40°C to +105°C
(Note 19) Under the high temperature environment, consider the power dissipation of IC when selecting the output current.
When the terminal short circuits are continuously output, the output current is reduced to climb to the temperature inside IC.
Datasheet
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BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Electrical Characteristics - continued
○BU7442xxx, BU7442Sxxx（Unless otherwise specified VDD=+3V, VSS=0V, TA=25°C)
Parameter
Symbol
Temperature
Range
Limit
Unit
Conditions
Min
Typ
Max
Input Offset Voltage (Note 20)
VIO
25°C
-
1
6
mV
-
Input Offset Current (Note 20)
IIO
25°C
-
1
-
pA
-
Input Bias Current (Note 20)
IB
25°C
-
1
-
pA
-
Supply Current (Note 21)
IDD
25°C
-
100
240
μA
RL=∞, All Op-Amps
AV=0dB, +IN=0.9V
Full range
-
-
480
Maximum Output Voltage(High)
VOH
25°C
VDD-0.1
-
-
V
RL=10kΩ
Maximum Output Voltage(Low)
VOL
25°C
-
-
VSS+0.1
V
RL=10kΩ
Large Signal Voltage Gain
AV
25°C
70
95
-
dB
RL=10kΩ
Input Common-mode
Voltage Range
VICM
25°C
0
-
1.8
V
VSS to VDD-1.2V
Common-mode
Rejection Ratio
CMRR
25°C
45
60
-
dB
-
Power Supply
Rejection Ratio
PSRR
25°C
60
80
-
dB
-
Output Source Current (Note 22)
ISOURCE
25°C
3
6
-
mA
VDD-0.4V
Output Sink Current (Note 22)
ISINK
25°C
5
10
-
mA
VSS+0.4V
Slew Rate
SR
25°C
-
0.3
-
V/μs
CL=25pF
Gain Bandwidth
GBW
25°C
-
0.6
-
MHz
CL=25pF, AV=40dB
Phase Margin
θ
25°C
-
50
-
deg
CL=25pF, AV=40dB
Total Harmonic Distortion +
Noise
THD+N
25°C
-
0.05
-
%
OUT=0.8VP-P
f=1kHz
Channel Separation
CS
25°C
-
100
-
dB
AV=40dB, OUT=1Vrms
(Note 20) Absolute value
(Note 21) Full range: BU7442xxx: TA=-40°C to +85°C, BU7442Sxxx: TA=-40°C to +105°C
(Note 22) Under the high temperature environment, consider the power dissipation of IC when selecting the output current.
When the terminal short circuits are continuously output, the output current is reduced to climb to the temperature inside IC.
Datasheet
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TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Electrical Characteristics - continued
○BU7444F, BU7444SF（Unless otherwise specified VDD=+3V, VSS=0V, TA=25°C)
Parameter
Symbol
Temperature
Range
Limit
Unit
Conditions
Min
Typ
Max
Input Offset Voltage (Note 23)
VIO
25°C
-
1
6
mV
-
Input Offset Current (Note 23)
IIO
25°C
-
1
-
pA
-
Input Bias Current (Note 23)
IB
25°C
-
1
-
pA
-
Supply Current (Note 24)
IDD
25°C
-
200
480
μA
RL=∞, All Op-Amps
AV=0dB, +IN =0.9V
Full range
-
-
960
Maximum Output Voltage(High)
VOH
25°C
VDD-0.1
-
-
V
RL=10kΩ
Maximum Output Voltage(Low)
VOL
25°C
-
-
VSS+0.1
V
RL=10kΩ
Large Signal Voltage Gain
AV
25°C
70
95
-
dB
RL=10kΩ
Input Common-mode
Voltage Range
VICM
25°C
0
-
1.8
V
VSS to VDD-1.2V
Common-mode
Rejection Ratio
CMRR
25°C
45
60
-
dB
-
Power Supply
Rejection Ratio
PSRR
25°C
60
80
-
dB
-
Output Source Current (Note 25)
ISOURCE
25°C
3
6
-
mA
VDD-0.4V
Output Sink Current (Note 25)
ISINK
25°C
5
10
-
mA
VSS+0.4V
Slew Rate
SR
25°C
-
0.3
-
V/μs
CL=25pF
Gain Bandwidth
GBW
25°C
-
0.6
-
MHz
CL=25pF, AV=40dB
Phase Margin
θ
25°C
-
50
-
deg
CL=25pF, AV=40dB
Total Harmonic Distortion +
Noise
THD+N
25°C
-
0.05
-
%
OUT=0.8VP-P
f=1kHz
Channel Separation
CS
25°C
-
100
-
dB
AV=40dB, OUT=1Vrms
(Note 23) Absolute value
(Note 24) Full range: BU7444F: TA=-40°C to +85°C, BU7444SF: TA=-40°C to +105°C
(Note 25) Under the high temperature environment, consider the power dissipation of IC when selecting the output current.
When the terminal short circuits are continuously output, the output current is reduced to climb to the temperature inside IC.
Datasheet
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13.Feb.2015 Rev.002
Description of Electrical Characteristics
Described here are the terms of electric characteristics used in this technical note. Items and symbols used are also shown.
Note that item name and symbol and their meaning may differ from those on another manufacture’s document or general
document.
1. Absolute maximum ratings
Absolute maximum rating item indicates the condition which must not be exceeded. Application of voltage in excess of absolute
maximum rating or use out of absolute maximum rated temperature environment may cause deterioration of characteristics.
(1) Supply Voltage (VDD/VSS)
Indicates the maximum voltage that can be applied between the VDD terminal and VSS terminal without deterioration
or destruction of characteristics of internal circuit.
(2) Differential Input Voltage (VID)
Indicates the maximum voltage that can be applied between non-inverting terminal and inverting terminal without
deterioration and destruction of characteristics of IC.
(3) Input Common-mode Voltage Range (VICM)
Indicates the maximum voltage that can be applied to the non-inverting and inverting terminals without deterioration
or destruction of electrical characteristics. Input common-mode voltage range of the maximum ratings does not assure
normal operation of IC. For normal operation, use the IC within the input common-mode voltage range characteristics.
(4) Power Dissipation (PD)
Indicates the power that can be consumed by the IC when mounted on a specific board at the ambient temperature 25°C
(normal temperature). As for package product, PD is determined by the temperature that can be permitted by the IC in
the package (maximum junction temperature) and the thermal resistance of the package.
2. Electrical characteristics
(1) Input Offset Voltage (VIO)
Indicates the voltage difference between non-inverting terminal and inverting terminals. It can be translated into the
input voltage difference required for setting the output voltage at 0V.
(2) Input Offset Current (IIO)
Indicates the difference of input bias current between the non-inverting and inverting terminals.
(3) Input Bias Current (IB)
Indicates the current that flows into or out of the input terminal. It is defined by the average of input bias currents at
the non-inverting and inverting terminals.
(4) Supply Current (IDD)
Indicates the current that flows within the IC under specified no-load conditions.
(5) Maximum Output Voltage(High) / Maximum Output Voltage(Low) (VOH/VOL)
Indicates the voltage range of the output under specified load condition. It is typically divided into maximum output
voltage High and low. Maximum output voltage high indicates the upper limit of output voltage. Maximum output
voltage low indicates the lower limit.
(6) Large Signal Voltage Gain (AV)
Indicates the amplifying rate (gain) of output voltage against the voltage difference between non-inverting terminal
and inverting terminal. It is normally the amplifying rate (gain) with reference to DC voltage.
AV = (Output voltage) / (Differential Input voltage)
(7) Input Common-mode Voltage Range (VICM)
Indicates the input voltage range where IC operates normally.
(8) Common-mode Rejection Ratio (CMRR)
Indicates the ratio of fluctuation of input offset voltage when the input common mode voltage is changed. It is
normally the fluctuation of DC.
CMRR = (Change of Input common-mode voltage)/(Input offset fluctuation)
(9) Power Supply Rejection Ratio (PSRR)
Indicates the ratio of fluctuation of input offset voltage when supply voltage is changed.
It is normally the fluctuation of DC.
PSRR = (Change of power supply voltage)/(Input offset fluctuation)
(10) Output Source Current/ Output Sink Current (ISOURCE / ISINK)
The maximum current that can be output from the IC under specific output conditions. The output source current
indicates the current flowing out from the IC, and the output sink current indicates the current flowing into the IC.
(11) Slew Rate (SR)
Indicates the ratio of the change in output voltage with time when a step input signal is applied.
(12) Gain Bandwidth (GBW)
The product of the open-loop voltage gain and the frequency at which the voltage gain decreases 6dB/octave.
(13) Phase Margin (θ)
Indicates the margin of phase from 180 degree phase lag at unity gain frequency.
(14) Total Harmonic Distortion + Noise (THD+N)
Indicates the fluctuation of input offset voltage or that of output voltage with reference to the change of output voltage
of driven channel.
(15) Channel Separation (CS)
Indicates the fluctuation in the output voltage of the driven channel with reference to the change of output voltage of
the channel which is not driven.
Datasheet
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Figure 3.
Power Dissipation vs Ambient Temperature
Derating Curve
Figure 2.
Power Dissipation vs Ambient Temperature
Derating Curve
Figure 4.
Supply Current vs Supply Voltage
Figure 5.
Supply Current vs Ambient Temperature
Typical Performance Curves
○BU7441G, BU7441SG
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7441G: -40°C to +85°C BU7441SG: -40°C to +105°C
0.0
0.2
0.4
0.6
0.8
1.0
025 50 75 100 125 150
Ambient Temperature [°C]
Power Dissipation [W]
0
20
40
60
80
100
120
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Supply Current [µA]
0
20
40
60
80
100
120
1 2 3 4 5 6
Supply Voltage [V]
Supply Current [µA]
0.0
0.2
0.4
0.6
0.8
1.0
025 50 75 100 125 150
Ambient Temperature [°C]
Power Dissipation [W]
BU7441G
85
105
BU7441SG
1.7V
5.5V
3.0V
-40°C
25°C
85°C
105°C
Datasheet
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TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Typical Performance Curves – continued
○BU7441G, BU7441SG
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7441G: -40°C to +85°C BU7441SG: -40°C to +105°C
0
1
2
3
4
5
6
1 2 3 4 5 6
Supply Voltage [V]
Maximum Output Voltage (High) [V]
0
2
4
6
8
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Maximum Output Voltage (High) [V]
0
3
6
9
12
1 2 3 4 5 6
Supply Voltage [V]
Maximum Output Voltage (Low) [mV]
0
2
4
6
8
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Maximum Output Voltage (Low) [mV]
Figure 6.
Maximum Output Voltage (High) vs Supply Voltage
(RL=10kΩ)
-40°C
Figure 8.
Maximum Output Voltage (Low) vs Supply Voltage
(RL=10kΩ)
Figure 7.
Maximum Output Voltage (High) vs Ambient Temperature
(RL=10kΩ)
Figure 9.
Maximum Output Voltage (Low) vs Ambient Temperature
(RL=10kΩ)
85°C
105°C
1.7V
5.5V
3.0V
-40°C
25°C
85°C
105°C
1.7V
5.5V
3.0V
25°C
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 11/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Figure 11.
Output Source Current vs Ambient Temperature
(OUT=VDD-0.4V)
Typical Performance Curves – continued
○BU7441G, BU7441SG
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7441G: -40°C to +85°C BU7441SG: -40°C to +105°C
0
10
20
30
40
0 0.5 1 1.5 2 2.5 3
Output Voltage [V]
Output Source Current [mA]
0
10
20
30
40
50
60
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Output Sink Current [mA]
0
20
40
60
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Output Voltage [V]
Output Sink Current [mA]
0
5
10
15
20
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Output Source Current [mA]
Figure 13.
Output Sink Current vs Ambient Temperature
(OUT=VSS+0.4V)
Figure 12.
Output Sink Current vs Output Voltage
(VDD=3V)
Figure 10.
Output Source Current vs Output Voltage
(VDD=3V)
-40°C
25°C
85°C
105°C
1.7V
5.5V
3.0V
-40°C
25°C
85°C
105°C
5.5V
1.7V
3.0V
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 12/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Typical Performance Curves – continued
○BU7441G, BU7441SG
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7441G: -40°C to +85°C BU7441SG: -40°C to +105°C
Figure 14.
Input Offset Voltage vs Supply Voltage
(VICM=VDD-1.2V, Ek =-VDD/2)
Figure 15.
Input Offset Voltage vs Ambient Temperature
(VICM=VDD-1.2V, Ek =-VDD/2)
Figure 16.
Input Offset Voltage vs Input Voltage
(VDD=3V)
Figure 17.
Large Signal Voltage Gain vs Supply Voltage
-40°C
25°C
85°C
105°C
5.5V
1.7V
3.0V
-40°C
25°C
85°C
105°C
-40°C
25°C
85°C
105°C
0
20
40
60
80
100
120
140
160
180
200
1 2 3 4 5 6
Supply Voltage [V]
Large Signal Voltage Gain [dB]
-4.0
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
4.0
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Input Offset Voltage [mV]
-4.0
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
4.0
1 2 3 4 5 6
Supply Voltage [V]
Input Offset Voltage [mV]
-4
-3
-2
-1
0
1
2
3
4
-1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Input Voltage [V]
Input Offset Voltage [mV]
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 13/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Typical Performance Curves – continued
○BU7441G, BU7441SG
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7441G: -40°C to +85°C BU7441SG: -40°C to +105°C
0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Power Supply Rejection Ratio [dB]
0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Common Mode Rejection Ratio [dB]
0
20
40
60
80
100
120
140
160
180
200
1 2 3 4 5 6
Supply Voltage [V]
Common Mode Rejection Ratio [dB]
0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Large Signal Voltage Gain [dB]
Figure 18.
Large Signal Voltage Gain vs Ambient Temperature
Figure 19.
Common Mode Rejection Ratio vs Supply Voltage
Figure 20.
Common Mode Rejection Ratio vs Ambient Temperature
Figure 21.
Power Supply Rejection Ratio vs Ambient Temperature
5.5V
1.7V
3.0V
-40°C
25°C
85°C
105°C
5.5V
1.7V
3.0V
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 14/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Typical Performance Curves – continued
○BU7441G, BU7441SG
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7441G: -40°C to +85°C BU7441SG: -40°C to +105°C
0
20
40
60
80
100
1.E+
00
1.E+
01
1.E+
02
1.E+
03
1.E+
04
1.E+
05
1.E+
06
1.E+
07
1.E+
08
Frequency [Hz]
Voltage Gain[dB]
0
50
100
150
200
Phase [deg]
0.0
0.2
0.4
0.6
0.8
1.0
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Slew Rate H-L [V/µs]
0.0
0.2
0.4
0.6
0.8
1.0
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Slew Rate L-H [V/µs]
Figure 22.
Slew Rate L-H vs Ambient Temperature
Figure 23.
Slew Rate H-L vs Ambient Temperature
Figure 24.
Voltage Gain・Phase vs Frequency
(VDD=+3V, VSS=0V, TA=25℃)
5.5V
1.7V
3.0V
5.5V
1.7V
3.0V
Phase
Gain
1 1 101 102 103 104 105 106 107 108
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 15/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Figure 27.
Supply Current vs Supply Voltage
Figure 28.
Supply Current vs Ambient Temperature
Typical Performance Curves
○BU7442xxx, BU7442Sxxx
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7442xxx: -40°C to +85°C BU7442Sxxx: -40°C to +105°C
0
20
40
60
80
100
120
140
160
180
200
1 2 3 4 5 6
Supply Voltage [V]
Supply Current [µA]
0.0
0.2
0.4
0.6
0.8
1.0
025 50 75 100 125 150
Ambient Temperature [°C]
Power Dissipation [W]
Figure 26.
Power Dissipation vs Ambient Temperature
Derating Curve
0.0
0.2
0.4
0.6
0.8
1.0
025 50 75 100 125 150
Ambient Temperature [°C]
Power Dissipation [W]
Figure 25.
Power Dissipation vs Ambient Temperature
Derating Curve
0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Supply Current [µA]
BU7442F
BU7442FVM
BU7442NUX
BU7442SF
BU7442SFVM
BU7442SNUX
1.7V
5.5V
3.0V
-40°C
25°C
85°C
105°C
85
105
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 16/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Typical Performance Curves – continued
○BU7442xxx, BU7442Sxxx
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7442xxx: -40°C to +85°C BU7442Sxxx: -40°C to +105°C
0
3
6
9
12
1 2 3 4 5 6
Supply Voltage [V]
Maximum Output Voltage (Low) [mV]
0
2
4
6
8
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Maximum Output Voltage (Low) [mV]
0
1
2
3
4
5
6
1 2 3 4 5 6
Supply Voltage [V]
Maximum Output Voltage (High) [V]
0
2
4
6
8
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Maximum Output Voltage (High) [V]
Figure 31.
Maximum Output Voltage (Low) vs Supply Voltage
(RL=10kΩ)
Figure 29.
Maximum Output Voltage (High) vs Supply Voltage
(RL=10kΩ)
Figure 30.
Maximum Output Voltage (High) vs Ambient Temperature
(RL=10kΩ)
Figure 32.
Maximum Output Voltage (Low) vs Ambient Temperature
(RL=10kΩ)
-40°C
25°C
85°C
105°C
1.7V
5.5V
3.0V
-40°C
25°C
85°C
105°C
1.7V
5.5V
3.0V
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 17/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Figure 34.
Output Source Current vs Ambient Temperature
(OUT=VDD-0.4V)
Typical Performance Curves – continued
○BU7442xxx, BU7442Sxxx
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7442xxx: -40°C to +85°C BU7442Sxxx: -40°C to +105°C
0
10
20
30
40
0 0.5 1 1.5 2 2.5 3
Output Voltage [V]
Output Source Current [mA]
0
10
20
30
40
50
60
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Output Sink Current [mA]
0
20
40
60
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Output Voltage [V]
Output Sink Current [mA]
0
5
10
15
20
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Output Source Current [mA]
Figure 36.
Output Sink Current vs Ambient Temperature
(OUT=VSS+0.4V)
Figure 35.
Output Sink Current vs Output Voltage
(VDD=3V)
Figure 33.
Output Source Current vs Output Voltage
(VDD=3V)
-40°C
85°C
105°C
1.7V
5.5V
3.0V
-40°C
25°C
85°C
105°C
5.5V
1.7V
3.0V
25°C
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 18/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Typical Performance Curves – continued
○BU7442xxx, BU7442Sxxx
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7442xxx: -40°C to +85°C BU7442Sxxx: -40°C to +105°C
Figure 37.
Input Offset Voltage vs Supply Voltage
(VICM=VDD-1.2V, Ek =-VDD/2)
Figure 38.
Input Offset Voltage vs Ambient Temperature
(VICM=VDD-1.2V, Ek =-VDD/2)
Figure 39.
Input Offset Voltage vs Input Voltage
(VDD=3V)
Figure 40.
Large Signal Voltage Gain vs Supply Voltage
-40°C
25°C
105°C
5.5V
1.7V
3.0V
-40°C
25°C
85°C
105°C
-40°C
25°C
85°C
105°C
85°C
0
20
40
60
80
100
120
140
160
180
200
1 2 3 4 5 6
Supply Voltage [V]
Large Signal Voltage Gain [dB]
-4.0
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
4.0
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Input Offset Voltage [mV]
-4.0
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
4.0
1 2 3 4 5 6
Supply Voltage [V]
Input Offset Voltage [mV]
-4
-3
-2
-1
0
1
2
3
4
-1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Input Voltage [V]
Input Offset Voltage [mV]
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 19/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Typical Performance Curves – continued
○BU7442xxx, BU7442Sxxx
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7442xxx: -40°C to +85°C BU7442Sxxx: -40°C to +105°C
0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Power Supply Rejection Ratio [dB]
0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Common Mode Rejection Ratio [dB]
0
20
40
60
80
100
120
140
160
180
200
1 2 3 4 5 6
Supply Voltage [V]
Common Mode Rejection Ratio [dB]
0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Large Signal Voltage Gain [dB]
Figure 41.
Large Signal Voltage Gain vs Ambient Temperature
Figure 42.
Common Mode Rejection Ratio vs Supply Voltage
Figure 43.
Common Mode Rejection Ratio vs Ambient Temperature
Figure 44.
Power Supply Rejection Ratio vs Ambient Temperature
5.5V
1.7V
3.0V
-40°C
25°C
85°C
105°C
5.5V
1.7V
3.0V
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 20/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Typical Performance Curves – continued
○BU7442xxx, BU7442Sxxx
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7442xxx: -40°C to +85°C BU7442Sxxx: -40°C to +105°C
0
20
40
60
80
100
1.E+
00
1.E+
01
1.E+
02
1.E+
03
1.E+
04
1.E+
05
1.E+
06
1.E+
07
1.E+
08
Frequency [Hz]
Voltage Gain[dB]
0
50
100
150
200
Phase [deg]
0.0
0.2
0.4
0.6
0.8
1.0
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Slew Rate H-L [V/µs]
0.0
0.2
0.4
0.6
0.8
1.0
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Slew Rate L-H [V/µs]
Figure 45.
Slew Rate L-H vs Ambient Temperature
Figure 46.
Slew Rate H-L vs Ambient Temperature
Figure 47.
Voltage Gain・Phase vs Frequency
(VDD=+3V, VSS=0V, TA=25℃)
5.5V
1.7V
3.0V
5.5V
1.7V
3.0V
Phase
Gain
1 1 101 102 103 104 105 106 107 108
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 21/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Figure 50.
Supply Current vs Supply Voltage
Figure 51.
Supply Current vs Ambient Temperature
Figure 48.
Power Dissipation vs Ambient Temperature
Derating Curve
Figure 49.
Power Dissipation vs Ambient Temperature
Derating Curve
Typical Performance Curves
○BU7444F, BU7444SF
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7444F: -40°C to +85°C BU7444SF: -40°C to +105°C
0
50
100
150
200
250
300
350
400
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Supply Current [µA]
0
50
100
150
200
250
300
350
400
1 2 3 4 5 6
Supply Voltage [V]
Supply Current [µA]
0.0
0.2
0.4
0.6
0.8
1.0
025 50 75 100 125 150
Ambient Temperature [°C]
Power Dissipation [W]
0.0
0.2
0.4
0.6
0.8
1.0
025 50 75 100 125 150
Ambient Temperature [°C]
Power Dissipation [W]
1.7V
5.5V
3.0V
BU7444F
85
105
BU7444SF
-40°C
25°C
85°C
105°C
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 22/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Typical Performance Curves – continued
○BU7444F, BU7444SF
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7444F: -40°C to +85°C BU7444SF: -40°C to +105°C
0
1
2
3
4
5
6
1 2 3 4 5 6
Supply Voltage [V]
Maximum Output Voltage (High) [V]
0
3
6
9
12
1 2 3 4 5 6
Supply Voltage [V]
Maximum Output Voltage (Low) [mV]
0
2
4
6
8
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Maximum Output Voltage (High) [V]
0
2
4
6
8
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Maximum Output Voltage (Low) [mV]
Figure 54.
Maximum Output Voltage (Low) vs Supply Voltage
(RL=10kΩ)
Figure 52.
Maximum Output Voltage (High) vs Supply Voltage
(RL=10kΩ)
Figure 53.
Maximum Output Voltage (High) vs Ambient Temperature
(RL=10kΩ)
Figure 55.
Maximum Output Voltage (Low) vs Ambient Temperature
(RL=10kΩ)
-40°C
25°C
85°C
105°C
1.7V
5.5V
3.0V
-40°C
25°C
85°C
105°C
1.7V
5.5V
3.0V
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 23/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Figure 57.
Output Source Current vs Ambient Temperature
(OUT=VDD-0.4V)
Typical Performance Curves – continued
○BU7444F, BU7444SF
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7444F: -40°C to +85°C BU7444SF: -40°C to +105°C
0
10
20
30
40
0 0.5 1 1.5 2 2.5 3
Output Voltage [V]
Output Source Current [mA]
0
10
20
30
40
50
60
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Output Sink Current [mA]
0
20
40
60
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Output Voltage [V]
Output Sink Current [mA]
0
5
10
15
20
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Output Source Current [mA]
Figure 59.
Output Sink Current vs Ambient Temperature
(OUT=VSS+0.4V)
Figure 58.
Output Sink Current vs Output Voltage
(VDD=3V)
Figure 56.
Output Source Current vs Output Voltage
(VDD=3 V)
-40°C
25°C
85°C
1.7V
5.5V
3.0V
-40°C
25°C
85°C
105°C
5.5V
1.7V
3.0V
105°C
Datasheet
www.rohm.com TSZ02201-0RAR1G200160-1-2
© 2013 ROHM Co., Ltd. All rights reserved. 24/40
TSZ22111･15･001
BU7441G BU7441SG BU7442xxx BU7442Sxxx BU7444F BU7444SF
13.Feb.2015 Rev.002
Typical Performance Curves – continued
○BU7444F, BU7444SF
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7444F: -40°C to +85°C BU7444SF: -40°C to +105°C
Figure 60.
Input Offset Voltage vs Supply Voltage
(VICM=VDD-1.2V, Ek =-VDD/2)
Figure 61.
Input Offset Voltage vs Ambient Temperature
(VICM=VDD-1.2V, Ek =-VDD/2)
Figure 62.
Input Offset Voltage vs Input Voltage
(VDD=3V)
Figure 63.
Large Signal Voltage Gain vs Supply Voltage
-40°C
25°C
85°C
105°C
5.5V
1.7V
3.0V
-40°C
25°C
85°C
105°C
-40°C
25°C
85°C
105°C
0
20
40
60
80
100
120
140
160
180
200
1 2 3 4 5 6
Supply Voltage [V]
Large Signal Voltage Gain [dB]
-4.0
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
4.0
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Input Offset Voltage [mV]
-4.0
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
4.0
1 2 3 4 5 6
Supply Voltage [V]
Input Offset Voltage [mV]
-4
-3
-2
-1
0
1
2
3
4
-1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Input Voltage [V]
Input Offset Voltage [mV]
Datasheet
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Typical Performance Curves – continued
○BU7444F, BU7444SF
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7444F: -40°C to +85°C BU7444SF: -40°C to +105°C
0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Power Supply Rejection Ratio [dB]
0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Common Mode Rejection Ratio [dB]
0
20
40
60
80
100
120
140
160
180
200
1 2 3 4 5 6
Supply Voltage [V]
Common Mode Rejection Ratio [dB]
0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Large Signal Voltage Gain [dB]
Figure 64.
Large Signal Voltage Gain vs Ambient Temperature
Figure 65.
Common Mode Rejection Ratio vs Supply Voltage
Figure 66.
Common Mode Rejection Ratio vs Ambient Temperature
Figure 67.
Power Supply Rejection Ratio vs Ambient Temperature
5.5V
1.7V
3.0V
-40°C
25°C
85°C
105°C
5.5V
1.7V
3.0V
Datasheet
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Typical Performance Curves – continued
○BU7444F, BU7444SF
(*)The above characteristics are measurements of typical sample, they are not guaranteed.
BU7444F: -40°C to +85°C BU7444SF: -40°C to +105°C
0
20
40
60
80
100
1.E+
00
1.E+
01
1.E+
02
1.E+
03
1.E+
04
1.E+
05
1.E+
06
1.E+
07
1.E+
08
Frequency [Hz]
Voltage Gain[dB]
0
50
100
150
200
Phase [deg]
0.0
0.2
0.4
0.6
0.8
1.0
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Slew Rate H-L [V/µs]
0.0
0.2
0.4
0.6
0.8
1.0
-50 -25 0 25 50 75 100 125
Ambient Temperature [°C]
Slew Rate L-H [V/µs]
Figure 68.
Slew Rate L-H vs Ambient Temperature
Figure 69.
Slew Rate H-L vs Ambient Temperature
Figure 70.
Voltage Gain・Phase vs Frequency
(VDD=+3V, VSS=0V, TA=25℃)
5.5V
1.7V
3.0V
5.5V
1.7V
3.0V
Phase
Gain
1 1 101 102 103 104 105 106 107 108
Datasheet
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Application Information
NULL method condition for Test Circuit 1
VDD, VSS, EK, VICM Unit:V
Parameter
VF
S1
S2
S3
VDD
VSS
EK
VICM
Calculation
Input Offset Voltage
VF1
ON
ON
OFF
3
0
-1.5
1.8
1
Large Signal Voltage Gain
VF2
ON
ON
ON
3
0
-0.5
0.9
2
VF3
-2.5
Common-mode Rejection Ratio
(Input Common-mode Voltage Range)
VF4
ON
ON
OFF
3
0
-1.5
0
3
VF5
1.8
Power Supply Rejection Ratio
VF6
ON
ON
OFF
1.7
0
-0.9
0
4
VF7
5.5
－Calculation－
1. Input Offset Voltage (VIO)
2. Large Signal Voltage Gain (AV)
3. Common-mode Rejection Ratio (CMRR)
4. Power Supply Rejection Ratio (PSRR)
Figure 71. Test Circuit 1 (One Channel Only)
VDD
RF=50kΩ
RI=1MΩ
0.015µF
RS=50Ω
RL
SW2
500kΩ
500kΩ
0.01µF
EK
15V
DUT
VSS
VRL
50kΩ
VICM
SW1
0.015µF
RI=1MΩ
Vo
VF
RS=50Ω
1000pF
0.1µF
-15V
NULL
SW3
VIO
|VF1|
=
1+RF/RS
[V]
Av
|VF2-VF3|
=
ΔEK × (1+RF/RS)
[dB]
20Log
CMRR
|VF4 - VF5|
=
ΔVICM × (1+RF/RS)
[dB]
20Log
PSRR
|VF6 - VF7|
=
ΔVDD × (1+ RF/RS)
[dB]
20Log
Datasheet
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Switch Condition for Test Circuit 2
SW No.
SW1
SW2
SW3
SW4
SW5
SW6
SW7
SW8
SW9
SW10
SW11
SW12
Supply Current
OFF
OFF
ON
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
OFF
Maximum Output Voltage RL=10 [kΩ]
OFF
ON
OFF
OFF
ON
OFF
OFF
ON
OFF
OFF
ON
OFF
Output Current
OFF
ON
OFF
OFF
ON
OFF
OFF
OFF
OFF
ON
OFF
OFF
Slew Rate
OFF
OFF
ON
OFF
OFF
OFF
ON
OFF
ON
OFF
OFF
ON
Gain Bandwidth
ON
OFF
OFF
ON
ON
OFF
OFF
OFF
ON
OFF
OFF
ON
Figure 73. Slew Rate Input Output Wave
Figure 74. Test Circuit 3
Figure 72. Test Circuit 2 (each channel)
SW3
●
SW1
SW2
－
＋
SW9
SW10
SW11
SW8
SW5
SW6
SW7
CL
SW12
SW4
R1
1kΩ
R2 100kΩ
RL
VSS
VDD=3V
Vo
IN-
IN+
OUT2
VDD
VSS
R2=100kΩ
R1=1kΩ
VDD
VSS
OUT1
=1Vrms
IN
OUT2
CS=20Log
100×OUT1
R2=100kΩ
R1//R2
R1//R2
R1=1kΩ
Input Voltage
Output Voltage
Input Wave
Output Wave
t
1
.
8
V
P
-
P
1
.
8
V
0
V
Δ
t
t
1
.
8
V
0
V
Δ
V
10%
90%
SR
=
Δ
V
/
Δ
t
Datasheet
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Examples of Circuit
○Voltage Follower
○Inverting Amplifier
○Non-inverting Amplifier
Figure 76. Inverting Amplifier Circuit
Figure 77. Non-inverting Amplifier Circuit
Figure 75. Voltage Follower Circuit
Voltage gain is 0dB.
Using this circuit, the output voltage (OUT) is configured
to be equal to the input voltage (IN). This circuit also
stabilizes the output voltage (OUT) due to high input
impedance and low output impedance. Computation for
output voltage (OUT) is shown below.
OUT=IN
For inverting amplifier, input voltage (IN) is amplified by
a voltage gain and depends on the ratio of R1 and R2.
The out-of-phase output voltage is shown in the next
expression
OUT=-(R2/R1)・IN
This circuit has input impedance equal to R1.
For non-inverting amplifier, input voltage (IN) is amplified
by a voltage gain, which depends on the ratio of R1 and
R2. The output voltage (OUT) is in-phase with the input
voltage (IN) and is shown in the next expression.
OUT=(1 + R2/R1)・IN
Effectively, this circuit has high input impedance since its
input side is the same as that of the operational
amplifier.
VSS
OUT
IN
VDD
R
2
R
1
VSS
IN
OUT
VDD
VSS
R
2
VDD
IN
OUT
R
1
Datasheet
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Power Dissipation
Power dissipation (total loss) indicates the power that the IC can consume at TA=25°C (normal temperature). As the IC
consumes power, it heats up, causing its temperature to be higher than the ambient temperature. The allowable temperature
that the IC can accept is limited. This depends on the circuit configuration, manufacturing process, and consumable power.
Power dissipation is determined by the allowable temperature within the IC (maximum junction temperature) and the thermal
resistance of the package used (heat dissipation capability). Maximum junction temperature is typically equal to the
maximum storage temperature. The heat generated through the consumption of power by the IC radiates from the mold
resin or lead frame of the package. Thermal resistance, represented by the symbol θJA°C/W, indicates this heat dissipation
capability. Similarly, the temperature of an IC inside its package can be estimated by thermal resistance.
Figure 78 (a) shows the model of the thermal resistance of a package. The equation below shows how to compute for the
Thermal resistance (θJA), given the ambient temperature (TA), maximum junction temperature (TJmax), and power dissipation
(PD).
θJA = (TJmax-TA) / PD °C/W
The Derating curve in Figure 78 (b) indicates the power that the IC can consume with reference to ambient temperature.
Power consumption of the IC begins to attenuate at certain temperatures. This gradient is determined by Thermal resistance
(θJA), which depends on the chip size, power consumption, package, ambient temperature, package condition, wind velocity,
etc. This may also vary even when the same of package is used. Thermal reduction curve indicates a reference value
measured at a specified condition. Figure 78(c) to (h) shows an example of the derating curve for BU7441G, BU7441SG,
BU7442xxx, BU7442Sxxx, BU7444F and BU7444SF.
0.0
0.2
0.4
0.6
0.8
1.0
025 50 75 100 125 150
Ambient Temperature [°C]
Power Dissipation [W]
(d) BU7441SG
BU7441SG(Note 26)
0.0
0.2
0.4
0.6
0.8
1.0
025 50 75 100 125 150
Ambient Temperature [°C]
Power Dissipation [W]
(c) BU7441G
BU7441G(Note 26)
85
105
θJA=(TJmax-TA)/ PD °C/W
Ambient temperature TA [ °C ]
Chip surface temperature TJ [ °C ]
(a) Thermal Resistance
0
Ambient temperature TA[C]
P2
P1
25
125
75
100
50
Power dissipation of LSI [W]
PDmax
TJmax
θJA2
θJA1
θJA2 < θJA1
(b) Derating Curve
Power dissipation of IC
Figure 78. Thermal Resistance and Derating Curve
Datasheet
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Power Dissipation – continued
(Note 26)
(Note 27)
(Note 28)
(Note 29)
(Note 30)
Unit
5.4
5.5
4.7
4.1
4.5
mW/C
When using the unit above TA=25°C, subtract the value above per Celsius degree. Permissible dissipation is the value
when FR4 glass epoxy board 70mm×70mm×1.6mm (copper foil area less than 3%) is mounted
0.0
0.2
0.4
0.6
0.8
1.0
025 50 75 100 125 150
Ambient Temperature [°C]
Power Dissipation [W]
(h) BU7444SF
Figure 78. Thermal Resistance and Derating Curve
BU7444SF(Note 30)
0.0
0.2
0.4
0.6
0.8
1.0
025 50 75 100 125 150
Ambient Temperature [°C]
Power Dissipation [W]
(g) BU7444F
BU7444F(Note 30)
85
105
0.0
0.2
0.4
0.6
0.8
1.0
025 50 75 100 125 150
Ambient Temperature [°C]
Power Dissipation [W]
(f) BU7442Sxxx
0.0
0.2
0.4
0.6
0.8
1.0
025 50 75 100 125 150
Ambient Temperature [°C]
Power Dissipation [W]
(e) BU7442xxx
BU7442F(Note 27)
85
105
BU7442FVM(Note 28)
BU7442NUX(Note 29)
BU7442SF(Note 27)
BU7442SFVM(Note 28)
BU7442SNUX(Note 29)
Datasheet
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Operational Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3. Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4. Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5. Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the PD stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum rating,
increase the board size and copper area to prevent exceeding the PD rating.
6. Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
8. Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
Datasheet
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Operational Notes – continued
12. Regarding the Input Pin of the IC
In the construction of this IC, P-N junctions are inevitably formed creating parasitic diodes or transistors. The operation
of these parasitic elements can result in mutual interference among circuits, operational faults, or physical damage.
Therefore, conditions which cause these parasitic elements to operate, such as applying a voltage to an input pin lower
than the ground voltage should be avoided. Furthermore, do not apply a voltage to the input pins when no power
supply voltage is applied to the IC. Even if the power supply voltage is applied, make sure that the input pins have
voltages within the values specified in the electrical characteristics of this IC.
13. Unused Circuits
When there are unused op-amps, it is recommended that they are
connected as in Figure 79, setting the non-inverting input terminal to a
potential within the in-phase input voltage range (VICM).
14. Input Voltage
Applying VDD+0.3V to the input terminal is possible without causing
deterioration of the electrical characteristics or destruction, regardless of
the supply voltage. However, this does not ensure normal circuit
operation. Please note that the circuit operates normally only when the
input voltage is within the common mode input voltage range of the
electric characteristics.
15. Power Supply(single/dual)
The op-amp operates when the voltage supplied is between VDD and
VSS. Therefore, the single supply op-amp can be used as dual supply
op-amp as well.
16. Output Capacitor
If a large capacitor is connected between the output pin and VSS pin, current from the charged capacitor will flow into
the output pin and may destroy the IC when the VDD pin is shorted to ground or pulled down to 0V. Use a capacitor
smaller than 0.1uF between output pin and VSS pin.
17. Oscillation by Output Capacitor
Please pay attention to the oscillation by output capacitor and in designing an application of negative feedback loop
circuit with these ICs.
18. Latch up
Be careful of input voltage that exceed the VDD and VSS. When CMOS device have sometimes occur latch up and
protect the IC from abnormaly noise.
19. Decupling Capacitor
Insert the decupling capacitance between VDD and VSS, for stable operation of operational amplifier.
20. Radiation Land
The VSON008X2030 package has a radiation land in the center of the back. Please connect to VSS potenital or don't
connect to other terminal.
VSS
VDD
VICM
Figure 79. Example of Application Circuit
for Unused Op-amp
Keep this potential
in VICM
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Physical Dimensions, Tape and Reel Information – continued
Package Name
SOP8
(UNIT : mm)
PKG : SOP8
Drawing No. : EX112-5001-1
(Max 5.35 (include.BURR))
Datasheet
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Physical Dimensions, Tape and Reel Information – continued
Package Name
SOP14
(UNIT : mm)
PKG : SOP14
Drawing No. : EX113-5001
(Max 9.05 (include.BURR))
Datasheet
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Marking Diagrams
Product Name
Package Type
Marking
BU7441
G
SSOP5
A2
BU7441S
B8
BU7442
F
SOP8
7442
FVM
MSOP8
NUX
VSON008X2030
BU7442S
F
SOP8
7442S
FVM
MSOP8
NUX
VSON008X2030
BU7444
F
SOP14
BU7444F
BU7444S
BU7444SF
SOP14(TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
VSON008X2030 (TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
MSOP8(TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
SOP8(TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
Part Number Marking
SSOP5(TOP VIEW)
LOT Number
Datasheet
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Land Pattern Data
All dimensions in mm
PKG
Land pitch
e
Land space
MIE
Land length
≧ℓ 2
Land width
b2
SSOP5
0.95
2.4
1.0
0.6
SOP8
1.27
4.60
1.10
0.76
MSOP8
0.65
2.62
0.99
0.35
VSON008X2030
0.50
2.20
0.70
0.27
SOP14
1.27
4.60
1.10
0.76
All dimensions in mm
Package
Radiation
Land length
D3
Radiation
Land width
E3
Thermal Via
Pitch
Diameter
VSON008X2030
1.20
1.60
-
Φ0.3
Revision History
Date
Revision
Changes
20.Sep.2013
001
New Release
13.Feb.2015
002
Correction of Figure number (page.30 Power Dissipation)
VSON008X2030
e
b2
Thermal Via
E3
D3
MIE
ℓ2
SOP8, MSOP8, SOP14
MIE
ℓ2
b2
e
SSOP5
?
e
e
ℓ2
b2
MIE
Datasheet
Datasheet
Notice-GE Rev.004
© 2013 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for applicatio n in ordinar y elec tronic eq uipm ents (such as AV equipment ,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred b y you or third parties arisin g from the use of an y ROHM’s Prod ucts for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅢ CLASSⅡb CLASSⅢ
CLASSⅣ CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe d esign against the physical injur y, damage to any property, which
a failure or malfunction of our Products may cause. T he following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliabili ty, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlig ht or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing comp onents, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flu x (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radi ation-proof design.
5. Please verify and confirm ch aracteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Po wer Dissipation (P d) dependi ng on Ambient temp erature (T a). When us ed in sealed area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant co ndition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogen ous (chlori ne, bromine, etc.) flu x is used, the residue of flux may negativel y affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM represe ntative in advance.
For details, please refer to ROHM Mounting specification
Datasheet
Datasheet
Notice-GE Rev.004
© 2013 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise you r own indepen dent verificati on and judgme nt in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please t ake special care under dry condit ion (e.g. Grounding of human body / equipment / sol der iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportati on
1. Product performance and soldered connections may deteri orate if the Products are store d in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humi dity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommende d storage condition, solder ability of products out of recommended storage time peri od
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommen de d storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive s t ress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier ba g. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products pl ease dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoi ng information or data will not infringe any int ellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contai ned in this document.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including b ut not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
DatasheetDatasheet
Notice – WE Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
