| a NOE C/ CALIFORNIA 15E D MM 6427414 0001537 1 T-39-9o | KE L, S-BAND ' NE345 SERIES POWER GaAs MESFET FEATURES APPLICATIONS e CHIP OR PACKAGE OPTIONS L-BAND RADAR e@ HIGH Pout (10W & 20W) e NARROW-BAND COMMUNICATIONS e CLASS A OPERATION e MSAT, INMARSAT @ HIGH Tavp (40% TYP) ABSOLUTE MAXIMUM RATINGS a = +2520) e HERMETICALLY SEALED METAL/CERAMIC SYMBOLS PARAMETERS UNITS | RATINGS PACKAGE Vos Drain to Source Voltage Vv 15 e [ON IMPLANATION Vas Gate to Source Voitage Vv -7 SPACE QUALIFIED Veo Gate to Drain Voltage Vv -18 DESCRIPTION ID Drain Current 5 The NE345 power GaAs FET series offers high output power NEStT391D8 NES4S 1000" A 9 (10W and 20W versions) and high gain in the L and S-bands. The NE3451600 is a 16 cell device with a total gate width of NEsioeoca OB 30.72 mm and a gate length of 0.8 ym for increased linear gain. NE3451600 (Pair) A 18 NEC's plated heat sink (PHS) technology reduces thermal re- ic Gate Current sistance and enhances electrical performance. The devices NE345L-10B8, NES1417-10B, . _ feature TiAu plus plated Au bonding pads and a combination NES1723-10B, NE3451600 mA 60 * of SiO2/SiNa glassivation for scratch protection as well as sur- NE345L-20B, NES1417-20B 1 NES1723-20B, 7, face stability. NE3451600 (Pair) mA 120 7 The NE345 series is offered in chip form (single or matched Pr Total P Dissinall pairs) and In hermetically sealed metal/ceramic packages. NES45L-108, NES: 417-108, Also available, with partial matching networks are the NES1723-10B, NE3451600 Ww 50 NES1417 (1.4 to 1.7 GHz) and NES1723 (1.7 to 2.3 GHz) pack- NE345L-20B, NES1417-20B aged products. As always, NECs stringent quality assurance NES1723-20B, and test procedures assure the highest reliability and perform- NE3451600 (Pair) w 100 ance. The NE345 series of power FETs is qualified for space Tou Channel Temperature c +175 applications. TSTG Storage Temperature C = |-65to +175 APPLICATION SUMMARY TABLE PART FREQ. RANGE PACKAGES APPLICATION CHIP NUMBER (GHz) t-38 | t-39 | T-40 | 98 NE3451600 10 W chip device for hybrid applications 0.1 to 4.0! xX NE3451600 Pair | 20 W matched pair of chips for hybrid applications 0.1 to 4.01 x NES45L-10B 10 W unmatched packaged device 0,1 to 4.0! x NES45L-20B 20 W partial (input) matched packaged device 0.1 to 4.0! xX NES1417-10B 10 W partially matched (input/output)? 1.4 to 1.7 xX NES1417-20B 20 W partially matched (input/output)> 1.4 to 1.7 Xx NES1723-10B 10 W partially matched (input/output)? 1.7 023 xX NES1723-20B 20 W partially matched (input/output)? 1.7 10.2.3 xX Notes: 1. These devices are recommended for frequencies below 4 GHz. Please refer to our C-Band series of devices for applications above 4 GHz. 2, NE345L-20B is currently optimized for Pout at 2.3 GHz. Current development includes models optimized at 1.3 and 1.6 GHz. Contact your focal sales engineer for availability. 3. Partial match - Gain is guaranteed over the frequency band while Pout is guaranteed at upper edge of frequency band. 3-20NE C/ CALIFORNIA L5E D ELECTRICAL CHARACTERISTICS (ta = +25C) me G427414 0001538 3 mm 7 -77-9D NE345 SERIES estates | NESi#17-20B , 7- . PART NUMBER NES1723-10B NES1723-20B NE34516002 NE3451600 (PAIR) SYMBOLS PARAMETERS AND CONDITIONS UNITS} MIN | TYP | MAX | MIN | TYP { MAX loss Saturated Drain Current at Vos = 1.5 V, Vas = 0 A 5 7 9 10 14 18 VP Pinch-off Voltage at Vos = +2.5V, los = 830 mA Vv 5 -3.5 -2 los = 60 mA Vv 6 -3.5 -2 gm Transconductance at Vos = +2.5V, los = 2A mS 2000 lps = 4A mS 4000 Rin Therma! Resistance (Channel to Case) TcH = + 125C "CW 23 3 1.2 1.5 NE345 SERIES PERFORMANCE SPECIFICATIONS (a= +25 c) NE345L-10B NE345L-20B PART NUMBER NE34516002 | NE341600 (PAIR)"? F SYMBOLS PARAMETERS AND CONDITIONS (GHz) [UNITS] MIN | TYP | MAX| MIN] TYP | MAX Praga Output Power at 1 dB Compression 1.6 d8m 40 42 43 2. dBm 39 40 43 GL Linear Power Gain 16 dB 12 9 10 23 dB 8 9 11 Pout Output Power at Pin = 35, 1.6 dBm 44 Pin = 33 23 dBm 41 anos Power Added Efficiency at Pigs % 40 40 Ip Drain Current at Pide A 2.3 3 46 6 la Gate Current at Pida mA 10 20 NES SERIES PERFORMANCE SPECIFICATIONS (ta = +25c) PART NUMBER NES1417-108 | NES1417-20B | NES1723-10B | NES1723-208 SYMBOLS| PARAMETERS AND CONDITIONS (aris) UNITS | MIN| TYP | MAX! MEN| TYP; MAX] MIN| TYP | MAX} MIN| TYP) MAX Pias Output Power at 1 dB Compression 1.6 dBm | 39] 40 421 43 2.3 dBm 39 | 40 42 | 43 GL Linear Power Gain 1.6 dB 14 | 15.5 14 | 15.5 2.3 dB 12 | 13 11 | 12 Pour Output Power at Pin = +27, 1.6 dBm 41 Pin = +31 1.6 dBm 44 Pin = +29 23 dBm 4 PIN = +34 23 dBm 44 nAoo Power Added Efficiency at Piaa % 40 40 40 40 i) Drain Current at P1dB A 23| 3 46] 6 23| 3 46 | 6 la Gate Current at Pias mA 10 20 10 20 Notes: 1. Matching Condition, Delta VP (Absolute Value Vp1 - Ve2); 0.2 V MAX 2. 3, Test Conditions: a) Vos = 10V b) los with RF OFF = 2A for -10B, 4A for -208 c) Rg = 100 2 for -10B, 50 for -20B Pout - PIN 4. NADD = Vos x los x 100 3-21 Sampling Basis: 10 Samples/Wafer; Accept 0/Reject 1; Sample housed in 98 pkg.ee NE C/ CALIFORNIA : NE345 SERIES LSE D TYPICAL PERFORMANCE CHARACTERISTICS ta = 25c) Total Power Dissipation, Pt (W) Output Power, Pour (dBm) TYPICAL CHARACTERISTICS POWER DERATING CURVE 1600 NE345L-20B | NES1417-20B NES1723-20B 1 NE345L-10B NES1417-10B NES1723-10B 60 100 150 200 250 Case Temperature, To (C} NES45L-10B OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER f = 2.3 GHz Vos = 10 jos = 2A (RF OFF) 20 25 30 35 Input Power, Pin (dBm) Power Added Efficiency, nanp (%) Third Order Intermodulation, [Ma (dBc) Output Power, Pour (dBm) -20 -30 -40 -60 -60 -70 ME G427444 0001539 5 mm 7 -F9-9n NE345L-20B 3rd ORDER INTERMODULATION vs. OUTPUT POWER 10V- oS = 1 = 1.55 GHz, | {2 = 1.56 GHz YL Z V4 #32 434 +36 +38 +440 +42 Output Power, Pout (Two Tone Total) (dBm) 45 40 NE345L-20B OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER Vos = los = 4A OFF) 25 30 35 40 Input Power, Pin (dBm) TYPICAL LARGE SIGNAL INPUT/OUTPUT IMPEDANCES os = tow PART f = 1.6 GHz f = 2.3 GHz NUMBER | zn (0)! |ZouT (a)2| Zin (a)'_ | zourT (a)? NES45L-10B | 4.0 + j10.3 | 4.3 + j6.0 | 22.7 + j25.2 | 208 + j27.3 NES45L-208 | 3.1 + 17.3 [4.14 143 | 115+ j89 | 21+ 193 Notes: 1. Zin = Input impedance 2. ZouT = Output Impedance 3-22 2IN Zour L Power Added Efficiency, nanp (%)be NE C/ CALIFORNIA LSE D Mm 427424 G00154O 1 mm THFF-TO NE345 SERIES TYPICAL PERFORMANCE CHARACTERISTICS a = 25) . NES1723-10B NES1723-20B OUTPUT POWER, POWER ADDED EFFICIENCY OUTPUT POWER, POWER ADDED EFFICIENCY AND DRAIN CURRENT vs. INPUT POWER AND DRAIN CURRENT vs. INPUT POWER r Vos = 10V * Vos = 10V Ios = 2.0 A (RF OFF) = Ios = 4.0A(RFOFF) J _ sof 642 1 ft = 23 GHz & _ @] f= 2.3 GHz Pig x E 2 / a 28S 40 Pras z sor 40 A 2 1 - Lee _ > 23 38 Apes nano 40 2 3 38 so < - yr A 20-8 len = NAOD | 40 -S B esl B x f if 2S = 2 38 re 90.6 2 1 a, 10 Q she 20 22-8 - . o3 ~ 3 3a ios 109 Y 8 . b melee 9 v Zz o3 20h? sett 5 32 3 a 3% 2 3.0 30 a 20 22 24 26 28 30 92 34 36 20 22 24 26 28 30 92 34 36 Input Power, Pin (dBm) Input Power, Pin (dBm) NES1723-20B8 OUTPUT POWER vs. TEMPERATURE 45 pee Ste he com = og a 3 40 = a. PN 32dBM 5 = PN = 29dBm 3 oe eee PIN = 26dBm a ene ee: PN = 20dBm 2 38 0,013 dB/C 3 Pe thee 3 cede eal. Vos = 10V ios = 4.0 A (RF OFF) 20 f = 1.8 GHz 30 40 50 60 70 80 90 TFLANGE (C) 3-23a SSS SS NE C/ CALIFORNIA 15E D MM 6427424 0001541 3 me 7-~39-9d NE345 SERIES TYPICAL 10 W L-BAND LINE UP AT 1.6 GHz sa21a>> +1dBm > +16.dBm > +29d8m | > 4-40 dam NE72084 NE800196 NE800495-4 NE345L-10B TYPICAL 20 W L-BAND LINE UP AT 1.6 GHz / / -15 dBm +5 dBm 15 0B +20 dBm 140B +34 dBm SS +43 dBm 20 dB v \ \ NE72084 NE800196 NE1069L-48 NE345L-208 TYPICAL 10 W L-BAND LINE UP AT 1.6 GHz 20 0B 20 dB ode 145.08 Ben > 266 db 114.503 +40 dam NE72084 NE800196 NE800296 NES1417-10B / v \ TYPICAL 20 W L-BAND LINE UP AT 1.6 GHz / 165 dBm] oN +3.5dBm | 185 d8m D> 32 dBm > 443. dam NE72084 NE800196 NE1069L-4B NES1417-20B v Y TYPICAL 10 W S-BAND LINE UP AT 2.3 GHz ~14 dBm]. +4 dBm IN +17 dBm >> +2adam | 3 +40 dam NE72084 NE800196 NE800495-4 NES1723-10B t v \ TYPICAL 20 W S-BAND LINE UP AT 2.3 GHz 18dB +9 08M | 13 ap +22 dBm > $s2dBm | 44 ap > +43 dBm NE72084 NE800196 NE1069L-4B NES1723-20B / / a o 3 \ \ 3-24NE C CALIFORNIA SE D M@ 6427414 OO0154e 5S T-39-9D NE345 SERIES OUTLINE DIMENSIONS (units in mm) , NE345L-10B NES1417-20B OUTLINE T-38 NES1723-20B OUTLINE T-40 17.5405 143 2440.3 + r 1.0 20.4 GATE Hf 1020.1 GATE SOURCE 77 I I a TOT \ 25 6 IS | a . | D ( fe | = aa x iI 2 fF 17.4203 8,0 | SOURCE 1.26R 4,0 MIN tts DRAIN | U 12R Tol h~ 8.940.2 2.26+0.4 I O2 MAK fal 3.8 MAX 0.1 +008 Tl DRAIN et = i * 9,02 . 1.0 TYP 0.1 24 4 ee) 4.5 MAX + ? NE345L-20B 0.2 MAX 1.4 OUTLINE T-39 21.520.5 18.4 , NES1417-108 wre NES1723-108 GATE OUTLINE 98 0.6 25 _ TO occas | y) q 6.35+0.4 4.0 MIN | ___ source Tr LI LI 7 | TUT l 1.25R SOURCE | DRAIN 4.0 MIN | 32 1) (12902 j-_ 12.920.2 + | 2.2620.4 ' oma Line | 8K 0 th Trl 1.0 TYP r Flange Material: Copper _ Lead Material: Kovar DRAIN Flange Plating: Ni, Au Lead Plating: Ni, Au 10.9 bb} 17,.020.3 -~ 21.0406 ____ 1.8 6.0 MAX L 04 i FF 2.90.15 . o2MaAX 3-25b- NE C/ CALIFORNIA LSE D MM 6427414 0001543 7 mt To F>F-JO NE345 SERIES CHIP DIMENSIONS (Units in pm) TYPE NUMBER TOTAL UNIT GATE GATE TOTAL NUMBER OF CELLS OF CELLS GATE WIDTH FINGER WIDTH LENGTH OF GATE FINGERS NE3451600 16 30.72 mm 160 ym 0.8 pm 192 NE3451600 Pair 32 61.44 mm 160 um 0.8 pm 384 3760+20 um 369020 um T 740 20 ym 680+ 20um tL L Source Wraparound SECTION A-A } EXPANDED VI Recommended Bonding Area (ex? ew) / Au PLATED HEAT SINK WRAPAROUND Passivation: There is a SiO2 layer covering the entire surface of the 50 um GaAs except: (SEE NOTE 2) 1) Under the drain bond pads and 2) In the active area shown in the cross section drawing below. HANDLING PRECAUTIONS HANDLING BONDING 1. The NE345 chips are very large and fragile. Handle with care. Gate and drain bonding wires should be semi-hard gold wire (3 to 8% 2. Due tothe chip processing, some of the gold source wraparound elongation) 20 microns in diameter. dling Taos panes Saree ate on aah tb oause drahconte, Bonding should be performed with a wedge tip that has a taper of ap- : ee proximately 15C. Die attach and bonding time should be kept to a source shorts. Therefore, the FETs should be inspected after die minimum. As a general rule, the bonding operation should be kept attach and the gold plated pieces should be blown off with dry ni- trogen. RF performance will not be degraded by this phenome- non. within a 300C to 10 minute curve. If longer periods are required, the temperature should be lowered. DIE ATTACHMENT PRECAUTIONS Chip cracking as a result of thermal shock may occur due to the differ- NE345 electrostatic discharge (ESD) sensitivity classification: Cate- ent temperature coefficients of the GaAs and the gold of the plated gory A in accordance with MIL-STD-883C method 3015.2. Use ESD heat sink. Therefore, it is recormmended that the chip and the carrier precautions per DOD-HD8K-263. on which it willbe maunted be heated to an intermediate temperature The user must o ; ; . . ; ; . perate in aclean, dry environment. The chip channel fore mee, Oro to being placed on the die attach hot plate. Example is glassivated for mechanical! protection only and does not preclude using Ausn preforms: the necessity of a clean environment, WARM DIE WARM The bonding equipment should be periodically checked for sources AMBIENT PLATE ATTACH PLATE AMBIENT of surge vollage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the mm 25C m 150C = 300C m 150C me 25C possibilities of static discharge. EQUIVALENT CIRCUIT MODEL NE345100 (1 CELL) Ra Cap Rb G@ O_w T {| D Cas C Ra = 1420 gos OS Cas = 2.36 pF Ri = 2.739 gm Rs = 060 Ri Ls = 0.016 nH gm = 137 mS gos = 11.5 mS (86.956 0) Cop = 0.065 pF Cos = 0.50 pF Note: Rs Ro = 0.862 The NE345100 Is not available for sale. T = 40ps Zr = 1.92mm Itis the baseline unit from which NE3451600 and NE3451600 (Pair) S-Parameters data is Ls derived. 3-26NE C/ CALIFORNIA 1S5E D MM 6427414 0001544 7 T-39-9O NE345 SERIES Eb TYPICAL COMMON SOURCE SCATTERING PARAMETERS -150 NE345100 (1 Cell)? Coordinates in Ohms Frequency in GHz (Vos = 10 V, Ios = 125 mA) S-MAGN AND ANGLES: Vos = 10 V, IDS = 125 mA FREQUENCY (GHz) $i Sat S12 S22 K MAG! .05 1.00 -4.64 8.18 177.06 .002 87.52 31 -2.49 02 37.00 0.1 1.00 9.27 B.15 174.13 003 85.04 31 -4,98 04 33.99 0.2 99 ~18.41 8.05 168.34 006 80.17 31 -9.89 .08 30.98 0.4 98 -35.89 7.70 157.28 012 70.94 31 -19.26 17 27.97 0.6 96 -51.77 7.20 147,23 017 62.73 30 -27.77 26 26.21 0.8 94 -65.75 6.63 138.37 021 55.70 30 -35.30 34 24.96 1.0 92. -77.81 6.07 130.66 024 49.83 29 -41,91 42 23.99 1.2 90 88.11 5.54 123.96 026 44.98 2g -47.70 50 23.21 1.4 89 -96.89 .06 118.12 028 40.99 30 -52.81 59 22.54 1.6 88 -104.37 4.63 112.98 029 37.73 30 -57.37 67 21.97 1.8 87 -110.78 4.26 108.43 .030 35.04 30 -61.48 76 21.46 2.0 86 ~116.30 3.92 104.33 031 32.84 31 -65.21 84 21.01 2.2 85 -121.08 3.63 100.63 032 31.03 32 -68.63 92 20.60 2.4 85 -126.26 3.37 97.23 032 29.54 33 71.79 1.01 19.64 2.6 84 -128.92 3.14 94.10 032 28.34 34 -74,71 1.09 18,02 2.8 84 132.15 2.94 91.19 032 27.36 35 -77.45 1.18 17.01 3.0 84 -135.03 2.76 88.46 033 26.59 36 -80.01 1.26 16.19 3.2 83 -137.60 2.59 85.90 .033 26.00 37 -82.43 1.35 15.48 3.4 83 -139.91 2.44 83.47 .033 25.56 38 -84.71 1.43 14.84 3.6 83 -142.00 2.31 81.16 033 25.26 39 ~86.87 1.52 14.26 3.8 83 -143.89 2.18 78.95 033 25.08 40 ~88.93 1.60 13.72 4.0 83 145.61 2.07 76.84 032 26.02 41 -90.90 1.68 13.22 42 83 -147.19 1.97 74.82 032 25.06 42 -92.77 1.77 12.75 4.4 82 -148.64 1.87 72.87 032 25.19 43 -94.57 1.85 12.32 Vos = 10V, los = 125 mA with PF off. This data does not include bond wires on gate or drain. The source is connected to the backside of the chip by edge wrap around gold plating. Note: 1. Gain Calculations: MAG = {sell (k- Vie ~1). When K <1, MAG = MSG. 2. 2. 2 msg = 18211 x= 1+ Jal? = [Si]? = 122! _A = S11 S22 - S21 $12 |S12{ 2|Si12| |Sat| MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. The NE345100 is not available for sale. It is the baseline unit from which NE3451600 and NE3451600 (Pair) S-Parameters data is derived. 3-27L - NE C/ CALIFORNIA LSE D MM b4274L4 OOOL54s Oo me 7-54-97) NE345 SERIES TYPICAL COMMON SOURCE SCATTERING PARAMETERS NE3451600 Coordinates in Ohms Frequency in GHz (Vos = 10 V, Ips = 2 A) S-MAGN AND ANGLES: vos = 10V, IDS =2A FREQUENCY . (GHz) Sit S21 Si2 Sz2 K MAG! .05 99 -75.82 16.73 141.14 .003 51.60 81 ~177.85 .02 37.00 0.1 99 -114.59 11.42 121.09 005 32.00 83 -177.93 04 33.99 0.2 98 -144.39 6.45 104.90 .005 16.73 84 -178.41 .08 30.98 0.4 98 ~161.73 3.33 93.56 005 7.22 85 -178.54 17 27.97 0.6 98 -167.74 2.23 87.86 005 3.35 85 -178.33 25 26,21 08 98 -170.77 1.66 83.66 005 0,99 85 -178.05 134 24.96 1.0 .98 -172.59 1.32 80.10 005 -0.73 85 -177.74 42 23.99 1.2 98 -173.80 1.09 76.87 .005 -2.11 86 -177.43 50 23.21 1.4 98 -174.66 93 73.86 005 ~3.26 86 -177.13 59 22.54 16 98 -175.30 .80 71.01 005 -4,25 86 ~176.86 67 21,97 18 .98 -175.81 41 68.29 .005 -5.10 87 -176.60 6 21.46 2.0 98 ~176.21 63 65.68 005 -5.82 87 -176.37 84 21.01 22 98 -176.53 56 63.16 .005 ~6.44 87 ~176.17 92 20.60 2.4 98 -176.81 51 60.74 .005 -6.95 88 -175.99 1.01 19.64 26 98 -177.04 46 8.40 005 -7.36 88 ~175.84 1.09 18.02 28 98 -177.23 42 56.15. .005 -7.68 89 -175.71 1.18 17.01 3.0 98 -177.41 39 53.98 .005 -7.89 89 ~175.60 1.26 16.19 3.2 98 -177.56 35 51.88 .004 ~8.02 90 -175.51 1.35 15.48 3.4 98 ~177.69 33 49.86 .004 -8.05 90 -175.44 1.43 14.84 3.6 98 -177.81 30 47.91 .004 -7.99 0 -175.39 1.52 14.26 3.8 98 -177.92 28 46.03 .004 -7.84 91 175.35 1.60 13.72 4.0 98 -178.02 26 44.22 .004 -7.60 91 -175.33 1.68 13.22 42 98 -178,11 25 42.48 004 -7.28 91 -175.32 1.77 12.75 4.4 99 -178.19 23 40.80 .004 ~6.88 92 -175.32 1.85 12.32 Vos = 10V, los = 2 Awith RF off. This data does not include bond wires on gate or drain. The source is connected to the backside of the chip by edge wrap around gold plating. Note: 1. Gain Calculations: MAG = stl ( - Vk 1). When K <1, MAG = MSG. 2. 2 [So0f2 MSG = |S2i] K = 1+ TAT? ~ [S11]? = [S22] _A = S11 See - S21 Si2 |S12] 2[Si2| [S21] MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. The NE345100 is not available for sale. It is the baseline unit from which NE3451600 and NE3451600 (Pair) S-Parameters data is derived. 3-28re NE C/ CALIFORNIA LSE D> MM b427414 OOOLS4s 2 me 77 39-9D NE345 SERIES TYPICAL COMMON SOURCE SCATTERING PARAMETERS NE3451600 (Pair) Coordinates in Ohms Frequency in GHz (Vos = 10 V, las = 4A) S-MAGN AND ANGLES: Vos = 10V,IDS = 4A FREQUENCY (GHz) Si Sa1 Siz S22 K MAG! 05 99 -115.38 11.97 121.47 002 31.93 91 -179.03 02 37.00 0.1 99 -144.91 6.75 106.05 003 16.96 92 -179.32 04 33.99 0.2 99 -162.03 3.49 96.10 .003 7.93 92 -179.48 08 30.98 04 99 -170.95 1.76 88.83 .003 2.49 92 ~179.42 17 27.97 0.6 99 -173.94 1.17 84.52 .003 02 92 ~179,27 25 26.21 0.8 99 -175.44 87 80.99 .003 -1.68 92 -179.10 34 24.96 1.0 99 -176.34 69 77.80 .003 -3.03 92 ~178.93 42 23.99 1.2 99 -176.94 57 74.79 003 4.19 93 178.77 50 23.21 1.4 99 ~177.36 48 71,92 003 -.20 93 178.61 59 22.54 1.6 99 -177.68 42 69.17 003 -6.09 93 -178.47 67 21.97 18 99 -177.93 37 66.51 003 ~6.88 93 -178.33 76 21.46 2.0 99 -178.12 33 63.94 003 -7.56 93 -178.21 84 21.01 2.2 99 -178.28 .29 61.45 003 -8.15 94 -178.11 92 20.60 2.4 99 ~178.42 .26 59.05 002 ~8.64 94 ~178.02 1.01 19.64 2.6 99 -178.53 24 56.73 002 -9.03 94 ~177.94 1.09 18.02 28 99 -178.63 22 54.49 002 -9.33 94 -177.87 1.18 17.01 3.0 99 -178.71 20 52.33 002 ~9.54 94 ~177.81 1.26 16.19 3.2 99 -178.79 18 50.25 002 ~9.65 95 177.77 1.35 15.48 3.4 99 -178.85 17 48.24 .002 ~9.66 95 -177.73 1.43 14.84 3.6 99 -178.91 .16 46.31 002 -9.59 95 -177.70 1.52 14.26 3.8 99 -178.96 15 44.44 002 ~9.43 95 ~177.69 1.60 13.72 4.0 99 179.01 14 42.65 .002 -9.18 95 -177.67 1.68 13.22 42 99 -179.06 13 40.92 002 ~8.84 96 -177.67 1.77 12.76 4.4 .99 -179.10 12 39.26 002 -8.42 96 ~177.67 1.85 12.32 Vos = 10V, lps = 4 Awith RF off. This data does not include bond wires on gate or drain. The source is connected to the backside of the chip by edge wrap around gold plating. Note: 1. Gain Calculations: MAG = 8211 (x - fe - 1). When K <1, MAG = MSG. [S21] xa 1+ Af? - [Si]? - [S22]? ,K= ,A = S1i S22 - Sai S12 | S12} 2]Si2] {S2tj MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. The NE345100 is not available for sale. It is the baseline unit from which NE3451600 and NE3451600 (Pair) S-Parameters data is derived. NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. NEC reserves the right to make changes at any time without notice in order to improve design and supply the best product possible. 3-29Loo... = NE C/ CALIFORNIA 15E D MM bY274L4 OOOLSY? 4 MM T= 379-Fo NE345 SERIES TYPICAL COMMON SOURCE SCATTERING PARAMETERS NE345L-10B 0 ~160 Coordinates in Ohms Frequency in GHz (Vos = 10 V, los = 2 A) S-MAGN AND ANGLES: VbsS = 10 V, IDS = 24, Rg = 1000 FREQUENCY (GHz) Sit Sai S12 S22 K MAG? 0.1 98 -124.70 10.43 128.60 006 23.10 84 -176.30 19 32.40 0.2 97 -152.20 6.73 110.50 .008 24.40 84 ~177.60 33 29.25 0.4 o7 -169.40 3.33 92.50 .008 26.20 84 -178.60 59 26.19 0.6 97 -176.00 2.21 84.80 .009 28.00 84 -177.70 40 23.90 0.8 27 ~179.50 1.44 82.40 011 30.00 84 -176.70 88 21.18 1.0 o7 -176.10 1.28 79.80 013 33.10 84 7171.20 97 19.92 1.2 97 -173.00 1.10 71.60 014 37.50 84 168.70 99 18.94 . 1.4 98 -170.20 94 66.10 014 40.10 84 -167.00 1.03 17.19 . 1.6 98 -167.70 81 62.30 015 47.50 84 -164,90 1.16 14.93 1.8 98 -165.00 A4 59.30 017 50.90 84 ~163.20 1.24 13.42 2.0 98 -162.50 68 55.10 .020 52.40 84 -157.40 1.13 13.13 2.2 98 -160.40 64 53.20 021 54.00 84 -168.60 1.10 12.88 2.4 98 -157.70 61 49.20 023 46.90 84 -156.10 1.01 13.47 2.6 99 -155.20 58 45.70 026 54.00 84 -153.30 1.00 13.16 2.8 99 -152.70 56 41.40 .030 51.10 84 -160.80 93 12.74 3.0 99 -149.90 55 37,50 033 52.20 84 ~148.00 89 12.22 3.2 99 -147.30 54 33.10 .037 52.70 84 -145.60 86 11.61 3.4 99 -144.50 52 29.60 038 49.50 83 -142.40 85 11.36 3.6 99 -141,50 63 26.80 046 49.00 83 -139.20 85 10.65 3.8 99 138.30 55 21.60 048 44.90 82 ~136.10 81 10.60 4.0 99 -134.90 55 16.70 .054 43.00 81 -132.60 79 10.10 4.2 99 -131.30 57 14.40 064 41.60 79 -128,50 80 9.51 4.4 99 -127.30 63 7.60 073 36.60 6 -123.50 76 9.37 Vos = 10V, los = 4A with RF off. This data does nat include bond wires on gate or drain. The source is connected to the backside of the chip by edge wrap around gold plating. Note: 4. Gain Calculations: MAG = 1g (k- Ke - 1). When K <1, MAG = MSG. 2. 2. 2 use = 182th Ka 1+ JAI? ~ [Sit]? = S221 , A = Sti S22 ~ Sai Sia |Si2| 2|St2] {S2i] MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. The NE345100 is not available for sale. It is the baseline unit from which NE3451600 and NE3451600 (Pair) S-Parameters data is derived.NE C/ CALIFORNIA LSE D mm b427424 0001548 b mm 7- 3990 NE345 SERIES TYPICAL SMALL SIGNAL COMMON SOURCE SCATTERING PARAMETERS {50 . ses }100 su 1150 0.05 GHz S20. Ah [ods as 25) 1 wis #180 -jto -|250 4.4GHz [160 25 ~Ji00 ; NES1417-10B so? -)50 Coordinates in Ohms Frequency in GHz (Vos = 10 V, Ips = 4 A) S-MAGN AND ANGLES: Vps = 10 V, IDS = 4A, Rg = 1000 FREQUENCY (MHz) Sit $21 $12 S22 K Gma dB 8 94 146 1.77 28 .009 25 73 131 1.69 18.0 9 93 139 1.79 17 011 -36 71 124 1.48 17.9 1.0 92 131 1.86 5 014 -46 .69 116 1.31 179 1 92 122 2.00 7 013 -66 65 109 1.42 17.9 1.2 89 112 2.23 -22 019 -74 60 101 1.21 18.0 1.25 88 106 2.41 -29 021 ~78 57 97 1.23 17,7 1.3 .87 100 2.60 -38 024 -93 54 93 1.24 17.9 1.35 84 92 2.83 -48 023 -103 31 89 1.39 17.3 1.4 -81 83 3.12 -59 .027 -114 47 85 1.24 17.7 1.45 a7 71 3.44 -71 .030 -127 44 81 1.34 17.1 1.6 1 57 3.85 ~84 .034 -144 42 76 1.32 17.1 1.65 64 37 4.31 -100 041 -158 40 70 1.23 17.3 1.6 57 9 4.72 118 046 179 36 58 1.26 17.0 1.65 51 -31 5.07 -140 051 168 34 42 1.23 17.1 17 52 -74 4.83 -163 052 133 27 12 1.37 16.1 1.75 61 -113 4.54 176 .049 114 20 -25 1.42 15.8 1.8 70 -142 4.00 165 .046 90 .20 -70 1.44 15.4 1.85 78 -163 3.38 137 .040 71 25 -107 1.55 14.9 1.9 83 -179 2.84 121 .035 54 32 -131 1.61 145 Vos = 10V, los = 4 Awith RF off. This data does not include bond wires on gate or drain. The source is connected to the backside of tha chip by edge wrap around gold plating. Note: 1. Gain Calculations: MAG = {8211 (- Vr 1). When K <1, MAG = MSG. 2a. 2. 2 usa = 182] x = 1+ [Al? = [Si]? = [S22] , A = S11 S22 - Sai S12 [S12] 2|Si2] [S21] MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. The Nes45100 is not available for sale. It is the baseline unit from which NE3451600 and NE3451600 (Pair) S-Parameters data Is lerived, 3-31= . Be NE C/ CALIFORNIA LSE D MM 6427414 OOOLS4I 6 mm T-39-FH NE345 SERIES TYPICAL COMMON SOURCE SCATTERING PARAMETERS NES1723-10B = 180 Coordinates in Ohms Frequency In GHz (Vos = 10 V, Ips = 2 A) S-MAGN AND ANGLES: Vbs = 10V, IDS = 2A, Rg = 1000 FREQUENCY (GHz) Sit Sat Si2 Sea K Gma dB 8 94 147 1.68 52 .010 ~19 81 136 0.42 22.2 9 99 140 1.78 31 011 -24 .80 131 0.23 22.2 1.0 98 133 1.64 19 013 -30 78 125 0.42 21.1 1.1 96 127 1.53 9 012 -44 75 119 0.77 21.0 1.2 94 120 1.46 -1 014 -44 72 113 1.34 16.8 13 91 114 1.44 -9 014 ~63 68 107 2.28 13.8 1.4 87 107 1.46 -18 015 -64 63 102 3.03 12.1 1.5 84 101 1.66 -27 .018 ~71 59 98 3.34 11.3 1.65 82 97 1.62 -32 O17 -79 57 95 3.74 11.0 1.6 80 93 1.69 -37 .018 ~88 54 93 3.89 10.8 1.65 78 90 1.80 -43 021 -93 52 91 3.61 10.9 1.7 76 86 1,92 -50 .022 -100 50 88 3.46 11.1 1.75 74 81 2.05 -56 025 -109 47 86 3.23 11.2 1.8 72 76 2.21 -64 028 ~116 45 84 2.92 115 1.85 69 70 2.41 -73 031 -126 42 82 2.65 11.9 1.9 67 62 2.61 -82 033 -137 41 73 2.47 12.2 1.95 63 52 2.95 ~91 .037 -148 38 75 2.18 12.9 2.0 59 40 3.35 -103 .043 -161 35 71 1.85 13.6 2.05 54 23 3.81 -118 049 -176 32 63 1.64 14.2 2.1 47 -3 4.27 -136 054 _ 166 29 53 1.54 14.6 2.15 39 ~40 4.57 -156 .060 147 .23 35 1.51 14.6 22 37 -91 4.64 -180 .063 126 -16 2 1.62 14.4 2.25 42 -138 4.26 157 .062 100 13 -59 1.66 13.6 23 50 -172 3.65 137 057 77 19 -117 1.92 12.6 2.35 56 165 3.09 119 .050 57 28 -147 2.26 11.6 2.4 60 148 2.57 103 042 39 36 -166 2.84 10.5 2.45 63 134 2.16 91 036 26 42 ~-179 3.49 9.5 25 65 122 1.87 79 028 8 AT 171 4.54 8.7 2.6 70 99 1.44 57 021 -15 54 157 6.43 7.4 Vos = 10V, los = 4A with RF off. This data does not include bond wires on gate or drain. The source is connected to the backside of the chip by edge wrap around gold plating. Note: 1, Gain Calculations: MAG = etl ( Ve 71). When K <1, MAG = MSG. 27 2- 2 usa = 182tl k = 1+ |Al? ~ [S11]? = [S22 , A = Sit Sea - Sar Si2 {$12} 2(Si2] [S21] MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. The NE345100 is not available for sale. It is the baseline unit from which NE3451600 and NE34516(0 (Pair) S-Parameters data is derived. 3-32L.. pone me thee y-verDN E C/ CALIFORNIA TYPICAL COMMON SOURCE SCATTERING PARAMETERS }50 S-MAGN AND ANGLES: VDS = 10 V, IDS = 4A, Rg = 500 FREQUENCY (GHz) $i1 8 1.01 145 9 1.00 139 1.0 1.00 132 V1 99 126 1.2 96 118 1.3 -94 111 1.4 90 104 1.5 86 96 1.55 84 92 1.6 82 88 1.65 .80 83 1.7 8 78 1.75 76 73 18 4 66 1.85 71 59 19 69 50 1.95 67 39 - 20 64 25 2.1 .60 -19 2.15 60 -50 22 62 -86 2.25 65 -121 23 68 -149 2.35 70 -172 2.4 71 171 2.45 72 159 25 72 149 26 - 72 134 45E D mm 6427414 0001550 4 mm 7 NE345 SERIES NES1723-20B +90 ao) -9D Coordinates In Ohms 6 Frequency in GHz (Vos = 10 V, Ips = 4A) Sas $12 S22 K Gma dB 94 48 .007 -19 88 141 0.02 21.0 1.12 29 007 31 91 135 = -0.14 22.1 1.08 15 .006 -34 89 129 -0.19 22.3 1.03 3 .009 -37 86 123 0.10 20.7 1.03 ~7 .010 ~57 83 117 0.81 20.3 1.04 -17 O11 ~69 78 112 1.81 14.7 4.08 -27 011 -72 75 107 3.03 12.2 1.18 -37 013 -86 .69 101 3.87 10.6 1.23 -43 014 ~96 66 99 4.55 10.0 1.31 -48 015 -100 63 96 4.34 10.0 1.41 -55 017 -109 60 94 4.37 9.8 1.52 ~63 019 -117 BT 92 4.18 9.9 1.63 -70 .020 125 55 91 4.16 10.0 1.79 -78 023 ~135 5A 86 3.77 10.2 1.96 -87 .026 -147 47 86 3.44 10.5 2.17 -97 .030 ~156 44 8&3 3.09 10.9 2.39 -108 033 -168 AI 82 2.77 11.3 2.70 -120 .037 -179 36 76 2.47 11.9 3.37 ~151 .047 148 24 73 1.90 13.1 3.65 -171 .050 129 17 77 1.77 13.6 3.72 167 .052 110 11 103 1.67 13.7 3.45 144 .051 91 13 145 1.76 13.2 3.00 124 047 73 .21 157 2.03 12.3 2.54 107 042 56 29 156 2.42 11.2 2.10 92 .037 41 36 151 3.05 9.7 1.76 81 032 30 41 146 3.89 8.5 1.49 71 .028 20 44 144 4.96 73 1.08 55 023 4 .49 134 7.78 49 Vos = 10V, los = 4 Awith PF off. This data does not include bond wires on gate or drain. The source is connected to the backside of the chip by edge wrap around gold plating. Note: MSG = [S21] 1+ [A]? - |Si1|? - |S22f? Siz MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. The NE345100 is not available for sale. It is the baseline unit from which NE3451600 and NE3451600 (Pair) S-Parameters data is derived. 2|S12] [S21] 1. Gain Calculations; MAG = {g2il (x - Vm ~14). When K <1, MAG = MSG, A = S11 S22 - Sai St2 3-33