1C4D10120D Rev. F
C4D10120D
Silicon Carbide Schottky Diode
Z-Rec® RectifieR
Features
• 1.2kVSchottkyRectier
• ZeroReverseRecoveryCurrent
• High-FrequencyOperation
• Temperature-IndependentSwitching
• ExtremelyFastSwitching
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
• MotorDrives
Package
TO-247-3
Maximum Ratings (TC=25°Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 1200 V
VRSM SurgePeakReverseVoltage 1300 V
VRDCPeakReverseVoltage 1200 V
IF
ContinuousForwardCurrent
(PerLeg/Device)
19/38
9/18
5/10
A
TC=25˚C
TC=135˚C
TC=160˚C
IFRM RepetitivePeakForwardSurgeCurrent 26*
18* ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse
IFSM Non-RepetitiveForwardSurgeCurrent 46*
36* ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse
IF,Max Non-RepetitivePeakForwardCurrent 400*
320* ATC=25˚C,tP=10 ms,Pulse
TC=110˚C,tP=10 ms,Pulse
Ptot PowerDissipation(PerLeg/Device) 93/187
40/81 WTC=25˚C
TC=110˚C
TJ OperatingJunctionRange -55 to
+175 ˚C
Tstg StorageTemperatureRange -55 to
+135 ˚C
TO-247MountingTorque 1
8.8
Nm
lbf-in
M3Screw
6-32Screw
*PerLeg,**PerDevice
Part Number Package Marking
C4D10120D TO-247-3 C4D10120
VRRM = 1200 V
IF (TC=135˚C) =18A**
Qc  = 54nC**
2C4D10120D Rev. F
Electrical Characteristics (Per Leg)
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.4
1.9
1.8
3VIF = 5 A TJ=25°C
IF = 5 A TJ=175°C
IRReverseCurrent 20
40
150
300 μA VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
QCTotalCapacitiveCharge 27 nC
VR=800V,IF = 5A
di/dt=200A/μs
TJ=25°C
C TotalCapacitance
390
27
20
pF
VR=0V,TJ=25°C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
VR=800V,TJ=25˚C,f=1MHz
Note:Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC
ThermalResistancefromJunction
toCase
1.6*
0.8** °C/W
*PerLeg,**PerDevice
Typical Performance (Per Leg)
0
1
2
3
4
5
6
7
8
9
10
00.5 11.5 22.5 33.5
Current (A)
Voltage (V)
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
0
100
200
300
400
500
600
700
800
900
1000
0500 1000 1500 2000
Current (µA)
Voltage (V)
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
IF (A)
VF (V)
IR (μA)
VR (V)
3C4D10120D Rev. F
25
30
35
40
45
50
55
60
C4D10120D Per Leg Current Derating
0
5
10
15
20
25
25 50 75 100 125 150 175
Tc Case Temperature (C)
Figure3.CurrentDerating Figure4.PowerDerating
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
100.0
25 50 75 100 125 150 175
Figure5.RecoveryChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage
Typical Performance (Per Leg)
0
50
100
150
200
250
300
350
400
450
0.1 110 100 1000
0
5
10
15
20
25
30
35
0200 400 600 800 1000
TC ˚C
IF(peak) (A)
PTot (W)
TC ˚C
Qrr (nC)
VR (V)
C (pF)
VR (V)
10%Duty
20%Duty
30%Duty
50%Duty
70%Duty
DC
4C4D10120D Rev. F
6.0
8.0
10.0
12.0
14.0
Capacitive Energy (uJ)
0.0
2.0
4.0
0 200 400 600 800 1000
E
C
Capacitive Energy (uJ)
VRReverse Voltage (V)
Typical Performance
100
1000
IFSM(A)
10
1.E-05 1.E-04 1.E-03 1.E-02
tp(s)
1000
100
10
Figure7.TypicalCapacitanceStoredEnergy,perleg Figure8.Non-repetitivepeakforwardsurgecurrent
versuspulseduration(sinusoidalwaveform),perleg
tp (s)
IFSM (A)
TJ =25°C
TJ=110°C
VR (V)
14
12
10
8
6
4
2
0
02004006008001000
EC(mJ)
1E-051E-041E-031E-02
Figure9.DeviceTransientThermalImpedance
1E-3
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
thJC
(
o
C/W)
Time, t
p
(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
5C4D10120D Rev. F
Part Number Package Marking
C4D10120D TO-247-3 C4D10120
Package Dimensions
Package TO-247-3
Recommended Solder Pad Layout
TO-247-3
T U
WV
POS Inches Millimeters
Min Max Min Max
A .190 .205 4.83 5.21
A1 .090 .100 2.29 2.54
A2 .075 .085 1.91 2.16
b .042 .052 1.07 1.33
b1 .075 .095 1.91 2.41
b2 .075 .085 1.91 2.16
b3 .113 .133 2.87 3.38
b4 .113 .123 2.87 3.13
c .022 .027 0.55 0.68
D .819 .831 20.80 21.10
D1 .640 .695 16.25 17.65
D2 .037 .049 0.95 1.25
E .620 .635 15.75 16.13
E1 .516 .557 13.10 14.15
E2 .145 .201 3.68 5.10
E3 .039 .075 1.00 1.90
E4 .487 .529 12.38 13.43
e .214 BSC 5.44 BSC
N 3 3
L .780 .800 19.81 20.32
L1 .161 .173 4.10 4.40
ØP .138 .144 3.51 3.65
Q .216 .236 5.49 6.00
S .238 .248 6.04 6.30
T9˚ 11˚ 9˚ 11˚
U9˚ 11˚ 9˚ 11˚
V2˚ 8˚ 2˚ 8˚
W2˚ 8˚ 2˚ 8˚
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
66 C4D10120A Rev. F
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
Diode Model
TTT
RIfVVf *+=
Note: Tjis diode junction temperature in degrees
Celsius
RT= 0.08 + (Tj* 8.5*10-4)
VT= 0.96 + (Tj* -1.22*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Cree, Inc.:
C4D10120D