PD - 97753 AUTOMOTIVE GRADE AUIRLR024Z AUIRLU024Z Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET V(BR)DSS RDS(on) typ. max. ID D G S 55V 46m 58m 16A D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G G D-Pak AUIRLRU024Z S I-Pak AUIRLU024Z G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified. Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V 16 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 11 Pulsed Drain Current 64 IDM c PD @TC = 25C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS Units A 35 0.23 EAS Single Pulse Avalanche Energy (Thermally Limited) h d EAS (tested ) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) c W W/C 16 V 25 mJ 25 See Fig.12a, 12b, 15, 16 g A mJ -55 to + 175 C 300 Thermal Resistance j Parameter RJC Junction-to-Case RJA Junction-to-Ambient (PCB mount) RJA Junction-to-Ambient i Typ. Max. --- 4.28 --- 40 --- 110 Units C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 01/16/12 AUIRLR/U024Z Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current gfs IDSS IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 --- --- --- --- 1.0 7.4 --- --- --- --- --- 0.053 46 --- --- --- --- --- --- --- --- --- --- 58 80 100 3.0 --- 20 250 200 -200 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 9.6A m VGS = 5.0V, ID = 5.0A VGS = 4.5V, ID = 3.0A V VDS = VGS, ID = 250A S VDS = 25V, ID = 9.6A A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C nA VGS = 16V VGS = -16V e e e Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance --- --- --- --- --- --- --- --- 6.6 1.6 3.9 8.2 43 19 16 4.5 9.9 --- --- --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 380 62 39 180 50 81 --- --- --- --- --- --- S and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V nC ns nH pF ID = 5.0A VDS = 44V VGS = 5.0V VDD = 28V ID = 5.0A RG = 28 VGS = 5.0V Between lead, e e D G f Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current --- --- 16 ISM (Body Diode) Pulsed Source Current --- --- 64 showing the integral reverse 1.3 24 17 S p-n junction diode. TJ = 25C, IS = 9.6A, VGS = 0V TJ = 25C, IF = 9.6A, VDD = 28V di/dt = 100A/s VSD trr Qrr ton (Body Diode)c Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time MOSFET symbol A --- --- --- --- 16 11 V ns nC D G e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.54mH This value determined from sample failure population, RG = 25, IAS = 9.6A, VGS =10V. Part not starting TJ = 25C, L = 0.54mH, RG = 25, IAS = 9.6A, recommended for use above this value. VGS =10V. Pulse width 1.0ms; duty cycle 2%. When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer Coss eff. is a fixed capacitance that gives the same to application note #AN-994. charging time as Coss while VDS is rising from 0 to Ris measured at TJ of approximately 90C. 80% VDSS . 2 www.irf.com AUIRLR/U024Z Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-PAK MSL1 I-PAK MSL1 Class M1B (+/- 100V) AEC-Q101-002 Human Body Model Class H0 (+/- 250V) AEC-Q101-001 Charged Device Model Class C5 (+/- 1125V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage. www.irf.com 3 AUIRLR/U024Z 100 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V 1 3.0V 10 BOTTOM VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V 3.0V 3.0V 1 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 0.1 0.1 0.1 1 0.1 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 15 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ) 10 Fig 2. Typical Output Characteristics 100 T J = 175C 10 1 T J = 25C VDS = 10V 60s PULSE WIDTH 0.1 T J = 25C 10 TJ = 175C 5 V DS = 8.0V 300s PULSE WIDTH 0 0 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 1 V DS, Drain-to-Source Voltage (V) 12 0 2 4 6 8 10 12 14 16 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com nce AUIRLR/U024Z 10000 6.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 5.0A C, Capacitance(pF) C oss = C ds + C gd 1000 Ciss Coss 100 5.0 VGS , Gate-to-Source Voltage (V) C rss = C gd Crss VDS= 11V 4.0 3.0 2.0 1.0 10 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 Q G Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) VDS= 44V VDS= 28V OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 175C 10 T J = 25C 10 100sec 1 1msec Tc = 25C Tj = 175C Single Pulse VGS = 0V 10msec 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 3.0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRLR/U024Z 16 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID, Drain Current (A) 14 12 10 8 6 4 2 0 ID = 5.0A VGS = 5.0V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 -60 -40 -20 0 175 T C , Case Temperature (C) 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 J SINGLE PULSE ( THERMAL RESPONSE ) 0.01 R1 R1 J 1 R2 R2 C 2 1 2 Ri (C/W) i (sec) 2.354 0.000354 1.926 0.001779 Ci= iRi Ci iRi Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRLR/U024Z 15V D.U.T RG + V - DD IAS VGS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) DRIVER L VDS 100 ID 1.2A 1.8A BOTTOM 9.6A TOP 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 2.5 Charge Fig 13a. Basic Gate Charge Waveform VGS(th) Gate threshold Voltage (V) VG 2.0 ID = 250A 1.5 L DUT 0 1K VCC 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRLR/U024Z Avalanche Current (A) 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses Duty Cycle = Single Pulse 10 0.01 0.05 0.10 1 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 30 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 9.6A 25 20 15 10 5 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy vs. Temperature 8 www.irf.com AUIRLR/U024Z D.U.T Driver Gate Drive + - * D.U.T. ISD Waveform Reverse Recovery Current + RG dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width s Duty Factor Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRLR/U024Z D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak Part Marking Information Part Number AULR024Z YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRLR/U024Z I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak Part Marking Information Part Number AULU024Z YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRLR/U024Z D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. 12 www.irf.com AUIRLR/U024Z Ordering Information Base part number Package Type AUIRLR024Z Dpak AUIRLU024Z Ipak www.irf.com Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Tube Complete Part Number Quantity 75 2000 3000 3000 75 AUIRLR024Z AUIRLR024ZTR AUIRLR024ZTRL AUIRLR024ZTRR AUIRLU024Z 13 AUIRLR/U024Z IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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