AUIRLR024Z
AUIRLU024Z
HEXFET® Power MOSFET
01/16/12
www.irf.com 1
PD - 97753
AUTOMOTIVE GRADE
Features
●Logic Level
●Advanced Process Technology
●Ultra Low On-Resistance
●175°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
●Lead-Free, RoHS Compliant
●Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
S
D
G
Parameter
Units
I
D
@ T
C
= 25°C Continuous Drain Current, VGS @ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, VGS @ 10V A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage
V
EAS Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested ) Single Pulse Avalanche Energy Tested Value
h
IAR Avalanche Current
c
A
EAR Repetitive Avalanche Energy
g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
Units
RJC Junction-to-Case
j
––– 4.28
RJA Junction-to-Ambient (PCB mount)
i
–––
°C/W
RJA Junction-to-Ambient
–––
110
-55 to + 175
300
35
0.23
± 16
25
25
See Fig.12a, 12b, 15, 16
Max.
16
11
64
GDS
Gate Drain Source
D-Pak
AUIRLRU024Z
I-Pak
AUIRLU024Z
G
D
S
GDS
V
(BR)DSS
55V
R
DS(on)
typ. 46m
max. 58m
I
D
16A
AUIRLR/U024Z
2www.irf.com
S
D
G
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.54mH
RG = 25, IAS = 9.6A, VGS =10V. Part not
recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS .
Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L = 0.54mH, RG = 25, IAS = 9.6A,
VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer
to application note #AN-994.
Ris measured at TJ of approximately 90°C.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
–––
–––
V
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
0.053
–––
V/°C
–––
R
DS(on)
Static Drain-to-Source On-Resistance
–––
–––
m
–––
–––
100
V
GS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
gfs
Forward Transconductance
7.4
–––
–––
S
I
DSS
Drain-to-Source Leakage Current
–––
–––
μA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Q
g
Total Gate Charge
–––
6.6
9.9
Q
gs
Gate-to-Source Charge
–––
1.6
–––
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
3.9
–––
t
d(on)
Turn-On Delay Time
–––
8.2
–––
t
r
Rise Time
–––
–––
t
d(off)
Turn-Off Delay Time
–––
–––
ns
t
f
Fall Time
–––
–––
L
D
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
C
iss
Input Capacitance
–––
380
–––
C
oss
Output Capacitance
–––
–––
C
rss
Reverse Transfer Capacitance
–––
–––
pF
C
oss
Output Capacitance
–––
180
–––
C
oss
Output Capacitance
–––
–––
C
oss
eff.
Effective Output Capacitance
–––
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
–––
–––
(Body Diode) A
I
SM
Pulsed Source Current
–––
–––
(Body Diode)
c
V
SD
Diode Forward Voltage
–––
–––
1.3
V
t
rr
Reverse Recovery Time
–––
ns
Q
rr
Reverse Recovery Charge
–––
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 5.0V, ID = 5.0A
e
VGS = 4.5V, ID = 3.0A
e
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VDS = 25V, ID = 9.6A
ID = 5.0A
VDS = 44V
VGS = 16V
VGS = -16V
VGS = 5.0V
e
ID = 5.0A
RG = 28
TJ = 25°C, IS = 9.6A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 5.0V
e
VGS = 0V
di/dt = 100A/μs
e
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 9.6A
e
VDS = VGS, ID = 250μA
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
MOSFET symbol
VDD = 28V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
TJ = 25°C, IF = 9.6A, VDD = 28V
AUIRLR/U024Z
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Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
Qualification Information
†
D-PAK MSL1
I-PAK MSL1
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Charged Device
Model
Class C5 (+/- 1125V)
†††
AEC-Q101-005
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M1B (+/- 100V)
†††
AEC-Q101-002
Human Body Model Class H0 (+/- 250V)
†††
AEC-Q101-001
AUIRLR/U024Z
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1 110
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
3.0V
60μs PULSE WIDTH
Tj = 175°C
VGS
TOP 10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
0.1 110
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
60μs PULSE WIDTH
Tj = 25°C
3.0V
0246810 12
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current )
TJ = 25°C
TJ = 175°C
VDS = 10V
60μs PULSE WIDTH
0 2 4 6 8 10 12 14 16
ID,Drain-to-Source Current (A)
0
5
10
15
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 8.0V
300μs PULSE WIDTH
AUIRLR/U024Z
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, Source-to-Drain Voltage (V)
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
01234567
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VGS, Gate-to-Source Voltage (V)
VDS= 44V
VDS= 28V
VDS= 11V
ID= 5.0A
nce
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
2
4
6
8
10
12
14
16
ID, Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Durati on (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes :
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
2.354 0.000354
1.926 0.001779
J
J
1
1
2
2
R1
R1R2
R2
C
Ci iRi
Ci= iRi
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 5.0A
VGS = 5.0V
AUIRLR/U024Z
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QG
QGS QGD
VG
Charge
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
1K
VCC
DUT
0
L
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 1.2A
1.8A
BOTTOM 9.6A
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
VGS(th) Gate threshold Voltage (V)
ID = 250μA
AUIRLR/U024Z
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Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
5
10
15
20
25
30
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 9.6A
AUIRLR/U024Z
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width µs
Duty Factor 
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
AUIRLR/U024Z
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D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AULR024Z
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Part Number
IR Logo
Lot Code
AUIRLR/U024Z
www.irf.com 11
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AULU024Z
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive
Part Number
IR Logo
Lot Code
AUIRLR/U024Z
12 www.irf.com
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
AUIRLR/U024Z
www.irf.com 13
Ordering Information
Base part
number
Package Type Standard Pack Complete Part Number
Form
Quantity
AUIRLR024Z
Dpak
Tube
75
AUIRLR024Z
Tape and Reel
2000
AUIRLR024ZTR
Tape and Reel Left
3000
AUIRLR024ZTRL
Tape and Reel Right
3000
AUIRLR024ZTRR
AUIRLU024Z
Ipak
Tube
75
AUIRLU024Z
AUIRLR/U024Z
14 www.irf.com
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notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
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