APT20GF120BRD 1200V 32A Fast IGBT & FRED The Fast IGBTTM is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBTTM combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. TO-247 G * Low Forward Voltage Drop * High Freq. Switching to 20KHz * Low Tail Current * Ultra Low Leakage Current * RBSOA and SCSOA Rated * Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Parameter Collector-Gate Voltage (RGE = 20K) VGE Gate-Emitter Voltage I C1 Continuous Collector Current @ TC = 25C I C2 Continuous Collector Current @ TC = 90C Pulsed Collector Current 1 @ TC = 25C I CM2 Pulsed Collector Current 1 @ TC = 90C PD Total Power Dissipation UNIT 1200 1200 Volts 20 32 20 Amps 64 40 IM I CM1 A VCGR RY APT20GF120BRD Collector-Emitter Voltage 200 Watts -55 to 150 EL Operating and Storage Junction Temperature Range C 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. PR TL E All Ratings: TC = 25C unless otherwise specified. VCES TJ,TSTG C E G IN Symbol C STATIC ELECTRICAL CHARACTERISTICS (IGBT) BVCES VGE(TH) VCE(ON) I CES I GES Characteristic / Test Conditions MIN TYP MAX 5.5 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) 2.7 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) 3.3 3.9 1200 Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage UNIT 4.5 (VCE = VGE, I C = 350A, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) 1.0 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) 6.0 100 Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) Volts mA nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 052-6252 Rev A Symbol DYNAMIC CHARACTERISTICS (IGBT) Test Conditions Characteristic Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller") Charge td(on) tr td(off) tf Eon Turn-on Delay Time 70 100 Gate Charge VGE = 15V 95 150 13 20 I C = I C2 55 85 Resistive Switching (25C) 17 VGE = 15V 75 A VCC = 0.8VCES Turn-off Delay Time Turn-on Delay Time Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy PR 3 Rise Time VGE = 15V I C = I C2 3 Ets Total Switching Losses gfe Forward Transconductance 35 70 190 275 90 135 1.2 1.8 ns mJ 3.0 Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES 20 35 ns 160 I C = I C2 Fall Time 30 TJ = +150C VGE = 15V Turn-off Delay Time nC ns 20 R G = 10 3 Turn-on Delay Time pF 170 RG = 10 Fall Time UNIT 99 I C = I C2 Total Switching Losses tf f = 1 MHz Rise Time Ets td(off) 250 VCC = 0.5VCES Turn-off Switching Energy tr 165 2 Eoff td(on) 1500 IN tf 1100 IM td(off) MAX VCE = 25V EL tr TYP Capacitance VGE = 0V Cies td(on) MIN RY Symbol APT20GF120BRD R G = 10 90 TJ = +25C 2.7 mJ VCE = 20V, I C = 15A 12 S THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RJC RJA WT 052-6252 Rev A Torque Characteristic MIN TYP MAX Junction to Case (IGBT) 0.63 Junction to Case (FRED) 0.90 C/W 40 Junction to Ambient Package Weight UNIT 0.22 oz 6.1 gm 10 lb*in 1.1 N*m Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 See MIL-STD-750 Method 3471 3 Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein. APT20GF120BRD PRELIMINARY Power dissipation Ptot = (TC) parameter: Tj 150 C Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 32 220 W A IC 160 140 24 20 RY Ptot 180 120 16 12 80 IN 60 A 100 8 40 0 0 20 40 60 80 100 120 C PR Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 0 160 EL TC IM 4 20 0 20 40 60 80 100 120 C 160 TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 t = 9.0s p 10 s A K/W IC ZthJC 10 1 10 -1 100 s D = 0.50 0.20 1 ms 10 0 10 -2 0.10 0.05 0.02 single pulse 10 ms 0.01 DC 10 1 10 2 10 3 V 10 -3 -5 10 10 -4 10 -3 10 -2 VCE 10 -1 s 10 0 tp EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 USA 405 S.W. Columbia Street 052-6252 Rev A 10 -1 0 10 APT20GF120BRD PRELIMINARY Typ. capacitances Typ. gate charge VGE = (QGate) 16A A parameter: IC puls = 15 C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 C 600 V 800 V 10 0 Ciss C ies RY 14 12 10 C Coss oes A 8 10 -1 2 0 10 20 30 40 50 60 IM 4 0 C Crss res IN 6 70 80 100 10 -2 0 5 10 15 20 25 30 EL Q Gate Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 25 nH ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V PR Short circuit safe operating area 10 2.5 ICsc /IC(90C) ICsc /IC2 I CC1 ICpulse Cpuls//I 6 1.5 4 1.0 2 0.5 0 0.0 0 052-6252 Rev A V 40 VCE 200 400 600 800 1000 1200 V 1600 VCE 0 200 400 600 800 1000 1200 V 1600 VCE EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 USA 405 S.W. Columbia Street Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C IC 30 30 A A 24 22 20 17V 15V 13V 11V 9V 7V IC 22 20 18 18 16 16 14 14 12 12 10 10 8 8 6 6 4 4 2 0 2 0 0 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 30 A IC 24 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 V 14 VGE 0 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE APT20GF120BRD ULTRAFAST SOFT RECOVERY PARALLEL DIODE All Ratings: TC = 25C unless otherwise specified. MAXIMUM RATINGS (FRED) Symbol VR Characteristic / Test Conditions APT20GF120BRD UNIT 1200 Volts Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 85C, Duty Cycle = 0.5) 30 RMS Forward Current 70 IFSM Symbol Characteristic / Test Conditions IN STATIC ELECTRICAL CHARACTERISTICS (FRED) MIN TYP UNIT IM Volts IF = 30A, TJ = 150C 2.0 Maximum Reverse Leakage Current VR = VR Rated 250 Maximum Reverse Leakage Current VR = VR Rated, TJ = 125C 500 EL LS 2.0 IF = 60A 10 Series Inductance (Lead to Lead 5mm from Base) PR IRM Maximum Forward Voltage MAX 2.5 IF = 30A VF Amps 210 Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) A IF(RMS) RY VRRM A nH DYNAMIC CHARACTERISTICS (FRED) Characteristic MIN TYP MAX 85 trr1 Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C 70 trr2 Reverse Recovery Time TJ = 25C 70 trr3 IF = 30A, diF /dt = -240A/s, VR = 650V TJ = 100C 160 tfr1 Forward Recovery Time TJ = 25C 255 tfr2 IF = 30A, diF /dt = 240A/s, VR = 650V TJ = 100C 255 IRRM1 Reverse Recovery Current TJ = 25C 7 12 IRRM2 IF = 30A, diF /dt = -240A/s, VR = 650V TJ = 100C 12 20 Qrr1 Recovery Charge TJ = 25C 660 Qrr2 IF = 30A, diF /dt = -240A/s, VR = 650V TJ = 100C 1640 Vfr1 Forward Recovery Voltage TJ = 25C 15 Vfr2 IF = 30A, diF /dt = 240A/s, VR = 650V TJ = 100C 20 Rate of Fall of Recovery Current TJ = 25C 245 IF = 30A, diF /dt = -240A/s, VR = 650V (See Figure 10) TJ = 100C 160 diM/dt UNIT ns Amps nC Volts A/s 052-6252 Rev A Symbol APT20GF120BRD 2400 Qrr, REVERSE RECOVERY CHARGE (nano-COULOMBS) 80 60 TJ = 25C TJ = -55C 0 800 15A 400 2.0 50 TJ = 100C VR = 650V 60A 30A 30 15A 20 10 250 200 60A PR 30A EL TJ = 100C VR = 650V 150 15A 100 IM 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 3, Reverse Recovery Current vs Current Slew Rate 50 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 5, Reverse Recovery Time vs Current Slew Rate 1.6 Qrr 1.2 trr IRRM 0.8 trr Qrr IN Kf, DYNAMIC PARAMETERS (NORMALIZED) 40 0.4 0.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 4, Dynamic Parameters vs Junction Temperature -50 2000 tfr, FORWARD RECOVERY TIME (nano-SECONDS) IRRM, REVERSE RECOVERY CURRENT (AMPERES) 30A 1200 0 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 2, Reverse Recovery Charge vs Current Slew Rate 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 1, Forward Voltage Drop vs Forward Current trr, REVERSE RECOVERY TIME (nano-SECONDS) 60A 1600 100 TJ = 100C VR = 650V IF = 30A 1600 80 Vfr 1200 60 800 40 400 20 tfr 0 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate 1.0 D=0.5 0.2 0.1 0.1 0.05 0.05 NOTE: 0.02 0.01 SINGLE PULSE 0.01 PDM ZJC, THERMAL IMPEDANCE (C/W) 052-6252 Rev A 0.5 t1 t2 0.005 DUTY FACTOR D = t1 / t2 PEAK TJ =PDM x Z JC + TC 0.001 -5 10 10-4 Vfr, FORWARD RECOVERY VOLTAGE (VOLTS) 20 TJ = 100C 2000 RY 40 TJ = 150C TJ = 100C VR = 650V A IF, FORWARD CURRENT (AMPERES) 100 10-3 10-2 10-1 VR, REVERSE VOLTAGE (VOLTS) RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 10 APT20GF120BRD Vr D.U.T. trr/Qrr Waveform 30H PEARSON 411 CURRENT TRANSFORMER PR EL IM IN A RY +15v diF /dt Adjust 0v -15v Figure 25, Diode Reverse Recovery Test Circuit and Waveforms 1 IF - Forward Conduction Current 2 diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. 3 IRRM - Peak Reverse Recovery Current. 4 trr - Reverse Recovery Time Measured from Point of IF 1 4 6 Zero 5 3 Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 0.75 IRRM 2 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Qrr = 1/2 (trr . IRRM) Figure 8, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) Collector (Cathode) 6.15 (.242) BSC 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 052-6252 Rev A 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 0.40 (.016) 0.79 (.031) 0.5 IRRM 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Collector (Cathode) Emitter (Anode)