1/9Septe mber 2001
SET - RESET CAPABILITY
STATIC FLIP-FLOP OPERATION - RETAINS
STATE INDEFINIT ELY WITH CLOCK LEVEL
EITHER "HIGH" OR "LOW"
MEDIUM SP EED OPERATION 16 MHz (TYP. )
CLOCK TOGGLE RATE AT 10V
STANDARDIZED SYMMETRICAL O UTPUT
CHARACTERISTICS
QUIESCENT CURRENT S PECIFIED UP TO
20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
II = 100nA (MAX) AT VDD = 18V TA = 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENT S OF JEDEC
JESD13B " STANDARD SPECIFICATIO NS
FOR DESCRI PTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4013B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4013B consists of two identical,
independent data type flip-flops. Each flip-flop has
independent data, set, reset, and clock inputs and
Q and Q outputs. This device can be used for shift
register appl ications, an d, by connect ing Q output
to the data input, for counter and toggle
applications. The logic level present at the D input
is transferred to the Q output during the
positive-going transition of t he clock pul se. Setting
or resetting is independent of the clock and is
accomplished by a hi gh level on the set or reset
line, resp ec ti ve l y
HCF4013B
DUAL D-TYP E FLIP FL OP
PIN CONNECTION
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4013BEY
SOP HCF4013BM1 HCF4013M013TR
DIP SOP
HCF4013B
2/9
INPUT EQUIVALE NT CIRCUIT
LOGIC DIAGRAM
PIN DESCRIPTION
TRUTH TABLE
X : Don ’t Ca re
∆ : Low Lev el
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied .
All vol tage v al ues ar e referr ed t o VSS pin vo l tage .
RECOMMENDE D OPERATING CONDITIONS
PIN No SYMBOL NAME AND FUNCTION
3, 11 CLOCK1
CLOCK2 Clock Inputs
4, 10 RESET1
RESET2 Reset Inputs
6, 8 SET1, SET2 Set Inputs
5, 9 D1, D2 Data Inputs
1, 13 Q1, Q2 Data Outputs
2, 12 Q1, Q2 Data Outputs
7VSS Negative Supply Voltage
14 VDD Positive Supply Voltage
CLOCKD RESET SET Q Q
LLLLH
HLLHL
XLLQQ
XXHLLH
XXLHHL
X XHHHH
Symbol Parameter Value Unit
VDD Supply Voltage -0.5 to +22 V
VIDC Input Voltage -0.5 to VDD + 0.5 V
IIDC Input Current ± 10 mA
PDPower Dissipation per Package 200 mW
Power Dissipation per Output Transistor 100 mW
Top Operating Temperature -55 to +125 °C
Tstg Storage Temperature -65 to +150 °C
Symbol Parameter Value Unit
VDD Supply Voltage 3 to 20 V
VIInput Voltage 0 to VDD V
Top Operating Temperature -55 to 125 °C
HCF4013B
3/9
DC SPECIFICATI ONS
Th e Noi se Margin for bot h "1" a nd "0" level is : 1V min. wi th VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
Symbol Parameter
Test Condition Value
Unit
VI
(V) VO
(V) |IO|
(µA) VDD
(V)
TA = 25°C -40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
ILQuiescent Current 0/5 5 0.02 1 30 30
µA
0/10 10 0.02 2 60 60
0/15 15 0.02 4 120 120
0/20 20 0.04 20 600 600
VOH High Level Output
Voltage 0/5 <1 5 4.95 4.95 4.95 V0/10 <1 10 9.95 9.95 9.95
0/15 <1 15 14.95 14.95 14.95
VOL Low Level Output
Voltage 5/0 <1 5 0.05 0.05 0.05 V10/0 <1 10 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
VIH High Level Input
Voltage 0.5/4.5 <1 5 3.5 3.5 3.5 V1/9 <1 10 7 7 7
1.5/13.5 <1 15 11 11 11
VIL Low Level Input
Voltage 4.5/0.5 <1 5 1.5 1.5 1.5 V9/1 <1 10 3 3 3
13.5/1.5 <1 15 4 4 4
IOH Output Drive
Current 0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1
mA
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36
0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9
0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
IOL Output Sink
Current 0/5 0.4 <1 5 0.44 1 0.36 0.36 mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
IIInput Leakage
Current 0/18 Any Input 18 ±10-5 ±0.1 ±1±1µA
CIInput Capacitance Any Input 5 7.5 pF
HCF4013B
4/9
DYNAMIC ELECTRI CAL CHARACTERISTICS (Tamb = 25° C, C L = 50pF, RL = 200K, tr = tf = 20 ns)
(* ) T ypic al temperature co effici ent for all VDD value is 0.3 %/°C.
(1) Input tr, tf = 5ns
(2) If mo re tha n uni t is ca sc aded in a parall el clock ed appli cati on, tr should be made less than or equal to the sum of t he fixed propa gat i on
del ay time at 1 5pF and th e tran sition time of the ca rry ou tp ut driv i ng sta ge for the esti m at ed capaci tive load.
Symbol Parameter Test Cond ition Valu e (*) Unit
VDD (V) Min. Typ. Max.
tTLH tTHL Propagation Delay Time
(CLOCK to Q or Q outputs) 5 150 300 ns10 65 130
15 45 90
tPLH Propagation Delay Time
(SET to Q or RESET to Q)5 150 300 ns10 65 130
15 45 90
tPHL Propagation Delay
Time(SET to Q or RESET
to Q)
5 200 400 ns10 85 170
15 60 120
tTHL tTLH Trans ition Time 5 10 0 2 00 ns10 50 100
15 40 80
fCL (1) Maximum Clock Input
Frequency 5 3.5 7 MHz10 8 16
15 12 24
tWClock Pulse Width 5 140 70 ns10 60 30
15 40 20
tr , tf (2) Clock Input Rise or Fall
Time 515
µs10 4
15 1
tWSet or Reset Pulse Width 5 180 90 ns10 80 40
15 50 25
tsetup Data Setup Time 5 40 20 ns10 20 10
15 15 7
HCF4013B
5/9
TEST CIRCUIT
CL = 50p F or equi valent (i ncludes jig and p robe ca pacit ance)
RL = 200K
RT = ZOUT of pulse generator (typically 50)
WAV EFORM 1 : CLOCK T O Qn, Q n PROPAGATION DELAY TIMES , Dn TO C LOCK SETUP AND
HOLD TIMES, CL OCK MINIMUM PULSE W ITDH, MAXIMUM CLOCK FREQ UENCY
(f=1MHz; 50% duty cycle)
HCF4013B
6/9
WAVEFORM 2 : PROPAGATION DELAY TIMES (Qn, Qn TO SET, RESET ), M INIM UM PULSE W I DTH
(SET AND RESET) (f=1MHz; 50% duty cycle)
HCF4013B
7/9
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
Plastic DIP-14 MECHANICA L DATA
P001A
HCF4013B
8/9
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45° (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S8° (max.)
SO-14 MECHANICAL DATA
PO13G
HCF4013B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No l i cense is gra nte d by imp lication or oth erwise under an y patent or patent rights of STMicroelec tronics. Spec ificat ions
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems with out expres s written approval of STMicroelec tronics .
© The ST logo is a registered trademark of STMicroelectronic s
© 2001 ST M icroele ctro n ic s - P r inted in It al y - All Rights Reserved
STM icr o el ectron ics GROUP OF COM P ANIE S
Austral i a - Br azil - Chi na - F i nl and - Franc e - Germ any - Ho ng Kon g - India - Ital y - Jap an - Ma l aysia - Malta - Morocc o
Singapore - Spai n - Swe den - Sw i t zerland - United Ki ngdom
© http://www.st.com 9/9