BUF460AV
NPN TRANSISTOR POWER MODULE
■EAS Y TO DRIV E TE CHNO LO GY (E TD)
■HIGH CURRENT POWER BIPOLAR MODULE
■VERY LOW Rth JUNCTI O N CA SE
■SPE CIF IED ACCI DE NTA L OVERLOAD
AREAS
■FULLY INS ULAT E D PA CKAG E (U. L.
COMPLIANT) FOR EASY MOUNTING
■LOW INTERNAL PARASI TIC INDUCTANCE
APPLICATIONS:
■MOT OR CO NT RO L
■SMPS & UPS
■WELDING EQUIPMENT
INT E R NAL SCH E M ATI C DIAG RA M
February 2003
ISOTOP
®
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -5 V) 1000 V
VCEO(sus) Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
ICCollector Current 80 A
ICM Collector Peak Current (tp = 10 ms) 160 A
IBBase Current 18 A
IBM Base Peak Current (tp = 10 ms) 27 A
Ptot Total Dissipation at Tc = 25 oC 270 W
Visol Insulation Withstand Volta ge (RMS) from All
Four Terminals to External Heatsink 2500
Tstg Storage Temperature -65 to 150 oC
TjMax Operation Junction Temperature 150 oC
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THERMAL DATA
Rthj-case
Rthc-h Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Condu ctive
Grease Applied Max
0.41
0.05
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICER Collector Cut-off
Current (RBE = 5 Ω)VCE = VCEV
VCE = VCEV Tj = 100 oC0.2
2mA
mA
ICEV Collector Cut-off
Current (VBE = -1.5V) VCE = VCEV
VCE = VCEV Tj = 100 oC 0.2
2mA
mA
IEBO Emitter Cut-off Cu rrent
(IC = 0) VEB = 5 V 1 mA
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 0.2 A L = 25 mH
Vclamp = 450 V 450 V
hFE∗DC Current Ga in IC = 60 A VCE = 5 V 15
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 30 A IB = 3 A
IC = 30 A IB = 3 A Tj = 100 oC
IC = 60 A IB = 12 A
IC = 60 A IB = 12 A Tj = 100 oC
0.35
0.5 2
2
V
V
V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 60 A IB = 12 A
IC = 60 A IB = 12 A Tj = 10 0 oC1.1 1.5 V
V
diC/dt Rate of Rise of
On-state Collector VCC = 300 V RC = 0 tp = 3 µs
IB1 = 18 A Tj = 100 oC150 A/µs
VCE(3 µs)• Collector-Emitter
Dynam ic Voltage VCC = 300 V RC = 30 Ω
IB1 = 18 A Tj = 100 oC46V
V
CE(5 µs)• Collector-Emitter
Dynam ic Voltage VCC = 300 V RC = 30 Ω
IB1 = 18 A Tj = 100 oC23V
t
s
t
f
t
c
Storage Time
Fall Time
Cross-over Time
IC = 30 A VCC = 50 V
VBB = -5 V RBB = 0.2 Ω
Vclamp = 400 V IB1 = 3 A
L = 25 µH Tj = 100 oC
4.5
0.1
0.3
5
0.2
5
µs
µs
µs
VCEW Maximum Collecto r
Emitter Voltage
Without Snubber
ICWoff = 80 A IB1 = 16 A
VBB = -5 V VCC = 50 V
L = 80 µH RBB = 0.2 Ω
Tj = 12 5 oC
400 V
∗ Pulsed: P ulse duration = 300 µs, duty cycle 1.5 %
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Safe O perat ing Area
D erating Curve
C ollec tor -Emit ter Sat urat ion Voltage
Thermal Impedance
Collector- Em itter Volt age Versus
Base- Em itter Resist ance
Base- Em itter Sat uration Volt a ge
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Reverse Biased SOA
Reverse Biased SOA
Switching Tim e I nductive Load
Forward Biased SOA
Forward Biased SOA
Switching Time Inductive Load Versus
Temperature
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Turn-off Switching Test Circuit
Turn-off S witching Test Circuit
Turn-on Switching Wav eforms.
1) Fast electronic s witch 2) Non-inductive R esistor
3) Fast recovery recti fier
DC Current Gain
Turn-off Switching Waveforms.
1) Fast electronic switch 2) Non-inductive
Resistor
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.465 0.480
A1 8.9 9.1 0.350 0.358
B 7.8 8.2 0.307 0.322
C 0.75 0.85 0.029 0.033
C2 1.95 2.05 0.076 0.080
D 37.8 38.2 1.488 1.503
D1 31.5 31.7 1.240 1.248
E 25.15 25.5 0.990 1.003
E1 23.85 24.15 0.938 0.950
E2 24.8 0.976
G 14.9 15.1 0.586 0.594
G1 12.6 12.8 0.496 0.503
G2 3.5 4.3 0.137 1.169
F 4.1 4.3 0.161 0.169
F1 4.6 5 0.181 0.196
P 4 4.3 0.157 0.169
P1 4 4.4 0.157 0.173
S 30.1 30.3 1.185 1.193
P093A
ISOTOP MECHANICAL DATA
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subject to change without notice. This publication supersedes and replaces all information previously supplie d. S TMicroelectronics products
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