0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
13
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
0.255 (6.48)
ANODE
(CASE)
Ø0.020 (0.51) 2X
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, PO, is the total power radiated by the device into
a solid angle of 2 Hsteradians.
PACKAGE DIMENSIONS FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the
TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• (*) Indicates JEDEC registered values
Parameter Symbol Rating Unit
* Operating Temperature TOPR -65 to +125 °C
* Storage Temperature TSTG -65 to +150 °C
* Soldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °C
* Soldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °C
* Continuous Forward Current IF100 mA
* Forward Current (pw, 1µs; 200Hz) IF10 A
* Reverse Voltage VR3V
* Power Dissipation (TA= 25°C)(1) PD170 mW
Power Dissipation (TC= 25°C)(2) PD1.3 W
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1N6264
GaAs INFRARED EMITTING DIODE
DESCRIPTION
• The 1N6264 is a 940 nm LED in a
narrow angle, TO-46 package.
ANODE
(Connected
To Case)
3
1
CATHODE
SCHEMATIC
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
* Peak Emission Wavelength IF= 100 mA DP935 955 nm
Emission Angle at 1/2 Power IF= 100 mA 0±8 Deg.
* Forward Voltage IF= 100 mA VF1 ——1.7 V
* Reverse Leakage Current VR= 3 V IR——10 µA
* Total Power IF= 100 mA PO6—— mW
Rise Time 0-90% of output tr1.0 µs
Fall Time 100-10% of output tf1.0 µs
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C) (All measurements made under pulse conditions)
2001 Fairchild Semiconductor Corporation
DS300276 3/2/01 1 OF 3 www.fairchildsemi.com
50
50
20
40
60
80
100
40 30 20 10 0 10 20 30 40 50
0 - ANGULAR DISPLACEMENT FROM OPTICAL AXIS - DEGREES
NORMALIZED POWER OUTPUT
PO - NORMALIZED POWER OUTPUTIF - FORWARD CURRENT (mA)
Fig. 5 Typical Radiation Pattern
IF - FORWARD CURRENT (mA)
IF - FORWARD CURRENT (mA)
Fig. 1 Power Output vs. Input Current
TA - AMBIENT TEMPERATURE (C)
Fig. 2 Power Output vs. Temperature
Continuous
Forward
Current
Pulsed
PW 80 µs
Forward
Current
Normalized
IF = 100 mA
TA = 25˚C
25˚C 55˚CTA = 100˚C
Normalized
IF = 100 mA
TA = 25 C
.002.001
VF - FORWARD VOLTAGE (V)
Fig. 3 Forward Voltage vs. Forward Current
0
VF - FORWARD VOLTAGE (V)
Fig. 4 Forward Voltage vs. Forward Current
.9 1.0 1.1 1.2 1.3 1.4 1.5
.01
.02
.04
.06
.08
0.2
0.4
0.6
0.8
1.0
2.0
4.0
6.0
8.0
10
12345678910
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2
5
10
.005 .01 .02 0.1.05 0.2 0.5 1.0 2 5 10 -50
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2
0
4
6
8
10
20
40
60
80
100
-25 0 25 50 75 100 125 150
20
50
100
1N6264
GaAs INFRARED EMITTING DIODE
www.fairchildsemi.com 2 OF 3 3/2/01 DS300276
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
1N6264
GaAs INFRARED EMITTING DIODE
DS300276 3/2/01 3 OF 3 www.fairchildsemi.com