PROGRAMMABLE THRESHOLD COUPLER ISOLATION | CURRENT TYPICAL rion VOLTAGE (Vpy)| TRANSFER USEC.) Vee Isat) . MIN. RATIO MIN. Tr Tr . H11A10 1500 a 2 2 GE TYPE AC INPUT COUPLER H11AA1 H11AA2 HIGH VOLTAGE COUPLER 2500 1500 1500 1500 1500 1775 Vas PHOTO DARLINGTON OUTPUT H11B1 2500 H11B2 1500 H11B3 1500 H11B255 1500 H15B1 4000 Vams H15B2 4000 Vams 4N29 2500 4N29A 1775 Vrms 4N30 1500 4N31 1500 4N32 2500 4N33 4N32A 1775 Vans 1500 PHOTO SCR OUTPUT ISOLATION | If TRIGGER] tp 100C | BLOCKING TYPICAL GE TYPE VOLTAGE MIN. ) | (MAX.) uA | VOLTAGE (MIN.)| TON @sec.) | YF (MAX) PHOTON COUPLED INTERRUPTER MODULE PAGE BVEco TYPICAL Vce(sat) Ip (nA NO. OUTPUT CURRENT p (nA) (Vv) [TON GSEQ) [ty (SEC) MAX, H13A1 Ip = 20mA 200uA 30 : H13A2 Tr = 20mA SOKA 30 H13B1 Ir = 20mA 2500HA 25 H13B2 IF = 20mA 1000HA 25 GE TYPE MATCHED EMITTER DETECTOR PAIRS 129Photon Coupled Isolator H11D1-H11D4 ; Ga As Infrared Emitting Diode & NPN Silicon High Voltage Photo-Transistor The General Electric H11D1-H11D4 are gallium arsenide, infrared emitting diodes coupled with silicon high voltage photo-transis- Le P| bes aan mn ia, notes | tors in a dual in-line package. a pLILIt T 8 300 Reelre2 | REF] 2 : . . ort) TA (TOP VIEW) FS 2 |e Soa s0)"508 4 absolute maximum ratings: (25C) | rewen) || Fj age Sida, i Toit H 085] 216 | 5 INFRARED EMITTING DIODE Nr tne tek x [190 "lesa | | s Power Dissipation *100 milliwatts ro--1 TI +r ee 373) oss | Forward Current (Continuous) 60 rmilliamps Ae sean 4M at cs a "228| 2eals7! [7.12 Forward Current (Peak) 3 ampere iN |e nln aprmanr tno - (Pulse width 1ysec 300 P Ps) - SJE zinta pontine Reverse Voltage 6 volts 77 SOverlintaied dines at *Derate 1.33mW/C above 25C ambient. 5. Four lacs. TOTAL DEVICE PHOTO-TRANSISTOR H11Di-p2 | H11b3-b4 Storage Temperature -55 to 150C __-_ Operating Temperature -55 to 100C Power Dissipation **300 **300 milliwatts Lead Soldering Time (at 260C) 10 seconds. VcEo 300 200 volts Surge Isolation Voltage (Input to Output). VcBo 300 200 volts H11D1 2500V (peak) 1770V (ams) Veco 7 7 volts H11D2, D3, D4 1500V (peak) 060V RM S) Collector Current 100 100 milliamps Steady-State Isolation Voltage (Input to Output). (Continuous) H11D1 1500V peak) 1060V ams) **Derate 4.0mW/C above 25C ambient. H11D2, D3, D4 950V (peak) (RMS) individual electrical characteristics (25C) INFRARED EMITTING DIODE TYP. | MAX. UNITS PHOTO-TRANSISTOR MIN.IMAX| UNITS Forward Voltage 1.1 1.5 | volts Breakdown Voltage -Vpryceo D1,2| 300} volts (Ip = 10mA) (Ic = 1mA; Ip = 0) D3,4| 200] |volts Breakdown Voltage Vgrycpo D1,2 | 300) jvolts (Ic = 100zA; Ip = 0) D3,4]} 200] jvolts Reverse Current - 10 {microamps B reakdown Voltage ~ V(BR)EBO 7) {volts Collector Dark Current IcKo (Vop=200V; Ip=0;Ta= 25C) D1,2} | 100 |nanoamps (VcR=200V31p=0;Ta=100C) D1,2} | 250 |microamps Capacitance 50 - picofarads (VoR=100V;[p=0;Ta= 25 3) D3,4] | 100 |nanoamps (V = O,f = 1MHz) (VcE=100V; Ip=0; Ta=100C) D3,4| | 250 |microamps coupled electrical characteristics (25C) MIN. TYP. MAX. UNITS DC Current Transfer Ratio (Ip = 10mA, Vcr = 10V) H11D1,D2,D3 20 - |% H11D4 10 - 1% Saturation Voltage Collector to Emitter (Ip = 10mA, Ic = 0.5mA) = 0.1 0.4 | volts Isolation Resistance (Input to Output Voltage = 500Vpc) 100 _ _ gigaohms Input to Output Capacitance (Input to Output Voltage = O,f =1MHz) _ _ 2 picofarads Switching Speeds: Tum-On Time (Vcr = 10V, Ice = 2mA, Ry, = 10022) - 5 | microseconds Turm-Off Time (Vcg = 10V, Ice = 2mA, Ry = 100) 5 | microseconds 1307TYPICAL CHARACTERISTICS TO: Veg t10 VOLTS Ol IplOomA TCEQ NORMALIZED OUTPUT CURRENT onl 4 6 8 20 40 60 80100 Ip - INPUT CURRENT mA 1. OUTPUT CURRENT VS INPUT CURRENT Ph o IpFORWARD CURRENTmA Jd aL 5 2.0 Lo LS Vp - FORWARD VOLTAGE-VOLTS 3. INPUT CHARACTERISTICS To? Vg * 200 VOLTS Ip20 Ae Togo7NORMALIZED DARK CURRENT +25 +100 +125 +50 +75 Ta AMBIENT TEMPERATURE C 5. NORMALIZED DARK CURRENT VS. TEMPERATURE Tp*20ma Igeq7- NORMALIZED OUTPUT CURRENT NORMALIZED TO: Vee #10 VOLTS IpelOmA Ta= 425C +25 +65 +00 Ta- AMBIENT TEMPERATURE C 2. OUTPUT CURRENT VS. TEMPERATURE Tego -NORMALIZED OUTPUT CURRENT ol loco ! 19 tao Voge ~ COLLECTOR TO EMITTER VOLTAGE -VOLTS 4. OUTPUT CHARACTERISTICS 250 150 Vep*200V ~~ Trsi10mA Vegzl0v ~ IpsiOmA Tepo-COLLECTOR BASE CURRENT 2A Vos" Ips 5mA =50 725 Ta AMBIENT TEMPERATURE ~C COLLECTOR BASE CURRENT 6. 130 308 VS. TEMPERATURE