APT5014BLL APT5014SLL 500V 35A 0.140W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg VDSS ID SLL D * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25C unless otherwise specified. Parameter APT5014 UNIT 500 Volts Drain-Source Voltage 35 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 400 Watts Linear Derating Factor 3.2 W/C VGSM PD TJ,TSTG 140 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 35 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 500 Volts 35 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.140 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 500 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) UNIT Ohms A 100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-7006 Rev B 2-2002 Symbol DYNAMIC CHARACTERISTICS Symbol APT5014 BLL - SLL Characteristic MIN Test Conditions TYP MAX Ciss Input Capacitance VGS = 0V 3261 4000 Coss Output Capacitance VDS = 25V 704 1060 Reverse Transfer Capacitance f = 1 MHz 40 60 Crss Qg Total Gate Charge Q gs 3 VGS = 10V 69 110 VDD = 0.5 VDSS 19 23 ID = ID[Cont.] @ 25C 36 60 VGS = 15V 11 22 Gate-Source Charge Q gd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr VDD = 0.5 VDSS 6 12 ID = ID[Cont.] @ 25C 23 35 RG = 1.6 3 6 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions IS 35 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 140 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) 510 Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) 10 dt Peak Diode Recovery dv/dt dv/ 5 UNIT Amps Volts ns C 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP 0.31 40 1 Repetitive Rating: Pulse width limited by maximum junction C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.12mH, R = 25, Peak I = 35A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein. temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7006 Rev B 2-2002 0.35 t2 SINGLE PULSE 0.001 10-5 t1 0.01 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 10 Typical Preformance Curves 100 Graph Deleted ID, DRAIN CURRENT (AMPERES) 15 &10V 8V 80 60 7.5V 20 7V 20 6.5V 6V 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 60 40 20 TJ = +125C TJ = +25C TJ = -55C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 1.15 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.10 VGS=10V 1.05 VGS=20V 1.0 0.95 0.90 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 35 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 I D = 0.5 I D V GS 1.05 1.00 0.95 0.90 0.85 -50 [Cont.] = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7006 Rev B 2-2002 ID, DRAIN CURRENT (AMPERES) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 80 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 20,000 10,000 OPERATION HERE LIMITED BY RDS (ON) 100S Ciss C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 108 1mS 10 10mS TC =+25C TJ =+150C SINGLE PULSE 1 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I = I [Cont.] D 14 12 VDS=100V 10 VDS=250V VDS=400V 8 6 4 2 0 Coss 100 Crss 10 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 D 1,000 0 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 50 TJ =+150C 10 5 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Drain D PAK Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TJ =+25C 5.38 (.212) 6.20 (.244) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 050-7006 Rev B 2-2002 0.40 (.016) 0.79 (.031) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Gate Drain Source 2.21 (.087) 2.59 (.102) Source Drain Gate Dimensions in Millimeters (Inches) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated