Document Number: 81175 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 1.1, 13-Oct-09 1
Optocoupler, Phototransistor Output
4N38A
Vishay Semiconductors
DESCRIPTION
The 4N38A consists of a phototransistor optically coupled to
a gallium arsenide infrared-emitting diode in a 6 pin plastic
dual inline package.
The base of the phototransistor is not connected providing
noise immunity.
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• BSI IEC 60950; IEC 60065 pending
• DIN EN 60747-5-5 (VDE 0884)
•FIMKO
FEATURES
• Isolation test voltage 5000 VRMS
• High common mode rejection
• Thickness though insulation ≥ 0.4 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI ≥ 275
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5
i179004-4
1
2
3
6
5
4
B
C
E
A
C
NC
V
DE
21842
ORDER INFORMATION
PART REMARKS
4N38A CTR > 20 %, DIP-6
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR5V
Forward current IF 60 mA
Forward surge current tp ≤ 10 µs IFSM 3A
Power dissipation Pdiss 70 mW
Junction temperature Tj125 °C
OUTPUT
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Pdiss 70 mW
Junction temperature Tj125 °C
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81175
2Rev. 1.1, 13-Oct-09
4N38A
Vishay Semiconductors Optocoupler, Phototransistor Output
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Note
According to DIN EN 60747-5-5. This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety
ratings shall be ensured by means of suitable protective circuits.
COUPLER
Isolation test voltage (RMS) VISO 5000 VRMS
Total power dissipation Ptot 200 mW
Ambient temperature range Tamb - 55 to + 100 °C
Storage temperature range Tstg - 55 to + 125 °C
Soldering temperature (2) 2 mm from case, t ≤ 10 s Tsld 260 °C
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
ELECTRICAL CHARACTERISTCS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF1.25 1.6 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
OUTPUT
Collector emitter voltage IC = 1 mA VCEO 80 V
IC = 100 µA, IB = 1 µA BVCBO 80 V
Emitter collector voltage IE = 100 µA VECO 7V
Collector ermitter cut-off current VCE = 20 V, IF = 0, E = 0 ICEO 200 nA
COUPLER
Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V
Cut-off frequency VCE = 5 V, IF = 10 mA,
RL = 100 Ωfc110 kHz
Coupling capacitance f = 1 MHz Ck0.6 pF
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IF
VCE = 10 V, IF = 20 mA - CTR 20 %
VCE = 10 V, IF = 10 mA,
TA = - 55 °C to + 100 °C -CTR30 %
MAXIMUM SAFETY RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward current IF130 mA
OUTPUT
Power dissipation Pdiss 265 mW
COUPLER
Rated impulse voltage VIOTM 6kV
Safety temperature Tsi 150 °C
Document Number: 81175 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 1.1, 13-Oct-09 3
4N38A
Optocoupler, Phototransistor Output Vishay Semiconductors
Fig. 1 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC60747
Note
(1) Indicates JEDEC registered values
INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test 100 %, ttest = 1 s Vpd 1.6 kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 1)
VIOTM 6kV
Vpd 1.3 kV
Insulation resistance
VIO = 500 V RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
VIO = 500 V, Tamb = 150 °C
(construction test only) RIO 109Ω
t
13930
t1
, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
VPd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s tstres
t3t4
t2
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Switching time (1) VCE = 10 V, IF = 10 mA, TA = - 55 °C to +100 °C td4µs
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81175
4Rev. 1.1, 13-Oct-09
4N38A
Vishay Semiconductors Optocoupler, Phototransistor Output
PACKAGE DIMENSIONS in millimeters
PACKAGE MARKING
14771_2
7.12 ± 0.3
0.25
6.5 ± 0.3
1.2 ± 0.1
3.5 ± 0.3
7.62 typ.
0.5 ± 0.1
4.5 ± 0.3
2.8 ± 0.5
4.5 ± 0.3
1 2 3
6 5 4 7.62 to 9.5 typ.
21764-22
4N38A
V YWW 24
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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