Phototransistors End Look Chip Part Nu mber Electrical & Optical Characteristics Wave length p(nm ) Materi al BPT-BP0331 Si-Phototransistor 940(400-1100) BPT-BP1331 940(400-1100) (NPN) BPT-BP2331 940(400-1100) BPT-BP0931 Si-Phototransistor 940(750-1100) BPT-BP1931 940(750-1100) (NPN) BPT-BP2931 BPT-BP0A31 Si-Phototransistor BPT-BP1A31 BPT-BP2A31 (NPN) Water Clear Black 940(750-1100) 940(820-1100) 940(820-1100) 940(820-1100) AMERICAN BRIGHT (909) 628-5050 Lens Color FAX (909) 628-5006 Black Light Current I c(on ) (m A) @V CE =5V Ee=0.5mW /cm 2 Saturation Voltag e VCE(sat ) ( V ) @I C =0.1 mA Ee=0.5mW /cm 2 Breakdown Voltag e V BR(CEO ) (V ) @I C =0.1 mA Ee=0 mW /cm 2 Typ. Max. Min. Max. 0.35 0.50 30 100 0.60 0.50 30 100 0.80 0.50 30 100 0.35 0.50 30 100 0.60 0.50 30 100 0.80 0.50 30 100 0.35 0.50 30 100 0.60 0.50 30 100 0.80 0.50 30 100 w w w. a m e r i c a n b r i g h t l e d . c o m Dark Current Vi ew in g I D (n A) Angl e @V CE =10V 2 1/2 Ee=0mW /cm 2 30 30 30 (c) 2003 American Bright Optoelectronics Corporation. Specifications subject to change without notice . IR-09