Chip Electrical &Optical Characteristics
Light Current
Ic(on )(m A)
@V CE =5V
Ee=0.5mW /cm2
Saturation
Vo ltag e
VCE(sat )(V)
@I C=0.1 mA
Ee=0.5mW /cm2
Breakdown
Vo ltag e
VBR(CEO )(V )
@I C=0.1 mA
Ee=0 mW /cm2
Dark Current
ID(n A)
@VCE =10V
Ee=0mW /cm2
Part Number
Materi al Wave length
p(nm )
Lens
Color
Typ. Max. Min. Max.
Vi ewing
Angl e
21/2
BPT-BP0331 940(400-1100) 0.35 0.50 30 100
BPT-BP1331 940(400-1100) 0.60 0.50 30 100
BPT-BP2331
Si-Phototransistor
(NPN)
940(400-1100)
Water
Clear
0.80 0.50 30 100
30
BPT-BP0931 940(750-1100) 0.35 0.50 30 100
BPT-BP1931 940(750-1100) 0.60 0.50 30 100
BPT-BP2931
Si-Phototransistor
(NPN)
940(750-1100)
Black
0.80 0.50 30 100
30
BPT-BP0A31 940(820-1100) 0.35 0.50 30 100
BPT-BP1A31 940(820-1100) 0.60 0.50 30 100
BPT-BP2A31
Si-Phototransistor
(NPN)
940(820-1100)
Black
0.80 0.50 30 100
30
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Phototransistors End Look
IR-09
