2SK2958(L) - Renesas Electronics

2SK2958(L),2SK2958(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-568B (Z)

3rd. Edition

Jul. 1998

Features

• Low on-resistance

RDS(on) = 5.5mΩ typ.

• 4V gate drive devices.

• High speed switching

Outline

1. Gate

2. Drain

3. Source

4. Drain

123

4

123

4

LDPAK

G

D

S

2SK2958(L),2SK2958(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 30 V

Gate to source voltage VGSS ±20 V

Drain current ID75 A

Drain peak current ID(pulse)Note1 300 A

Body-drain diode reverse drain current IDR 75 A

Channel dissipation Pch Note2 100 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V(BR)DSS 30——V I

D

= 10mA, VGS = 0

Gate to source breakdown voltage V(BR)GSS ±20——V I

G

= ±100µA, VDS = 0

Zero gate voltege drain current IDSS ——10µAV

DS = 30 V, VGS = 0

Gate to source leak current IGSS ——±10 µAV

GS = ±16V, VDS = 0

Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1mA, VDS = 10V

Static drain to source on state

resistance RDS(on) — 5.5 7.0 mΩID = 40A, VGS = 10V Note3

Static drain to source on state

resistance RDS(on) — 9.0 14.0 mΩID = 40A, VGS = 4V Note3

Forward transfer admittance |yfs|3560—S I

D

= 40A, VDS = 10V Note3

Input capacitance Ciss — 4100 — pF VDS = 10V

Output capacitance Coss — 2700 — pF VGS = 0

Reverse transfer capacitance Crss — 800 — pF f = 1MHz

Turn-on delay time td(on) — 45 — ns VGS = 10V, ID = 40A

Rise time tr— 430 — ns RL = 0.25Ω

Turn-off delay time td(off) — 460 — ns

Fall time tf— 440 — ns

Body–drain diode forward voltage VDF — 1.0 — V IF = 75A, VGS = 0

Body–drain diode reverse

recovery time trr — 90 — ns IF = 75A, VGS = 0

diF/ dt =50A/µs

Note: 3. Pulse test

2SK2958(L),2SK2958(S)

3

Main Characteristics

160

120

80

050 100 150 200 0.1 0.3 1 310 30 100

100

80

60

40

20

0246810

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

1000

300

100

30

10

1

0.3

0.1

3

Ta = 25°C

10 µs

100 µs

1 ms

DC Operation

(Tc = 25°C)

Operation in

this area is

limited by R

DS(on)

PW = 10 ms (1 shot)

5 V

4 V 3.5 V

3 V

40

V = 10 V

GS

6 V

2.5 V

100

80

60

40

20

012345

Tc = –25°C

25°C

75°C

V = 10 V

Pulse Test

DS

Pulse Test

2SK2958(L),2SK2958(S)

4

048

12 16 20

20

16

12

8

4

–40 0 40 80 120 160

0

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Drain Current I (A)

D

Drain to Source On State Resistance

R (m )

W

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I (A)

D

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

V = 4 V

GS

10 V

Pulse Test

R (m )

W

DS(on)

0.5

0.4

0.3

0.2

0.1

Pulse Test

I = 50 A

D

20 A

10 A

1 30 1003

50

2

5

1

10 1000300

20

10

V = 4 V

GS

10 V

Pulse Test

10, 20 A

I = 50 A

D

20 A 10 A

50 A

0.1 0.3 1 3 10 30 100

500

100

200

20

50

10

2

5

1

0.5

Tc = –25 °C

75 °C

25 °C

V = 10 V

Pulse Test

DS

2SK2958(L),2SK2958(S)

5

0.1 0.3 1 3 10 30 100 01020304050

3000

100000

10000

30000

50

40

30

20

10

0

20

16

12

8

4

80 160 240 320 400

0

1000

100

200

20

10

0.1 0.2 210 100

1000

500

100

200

20

50

10

di / dt = 50 A / µs

V = 0, Ta = 25 °C

GS

1000

300

20

1

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

100

V = 0

f = 1 MHz

GS

Ciss

Coss

Crss

I = 75 A

D

V

GS

V

DS

V = 5 V

10 V

25 V

DD

V = 25 V

10 V

5 V

DD

0.5 5

5

2000

5000

500

50

V = 10 V, V = 10 V

PW = 5 µs, duty < 1 %

GS DD

r

t

d(on)

t

d(off)

t

tf

2SK2958(L),2SK2958(S)

6

100

80

60

40

20

00.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

V = 0, –5 V

GS

5 V

10 V

Pulse Width PW (S)

Normalized Transient Thermal Impedance

s (t)

g

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

0.3

0.1

0.03

0.01

10 µ 100 µ 1 m 10 m 100 m 1 10

DM

P

PW

T

D = PW

T

ch – c(t) = s (t) • ch – c

ch – c = 1.25 °C/W, Tc = 25 °C

q g q

q

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

2SK2958(L),2SK2958(S)

7

Vin Monitor

D.U.T.

Vin

10 V

RL

V

= 10 V

DD

tr

td(on)

Vin

90% 90%

10%

Vout

td(off)

Vout

Monitor

50W

90%

10%

tf

Switching Time Test Circuit Waveform

2SK2958(L),2SK2958(S)

8

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (L)

—

1.4 g

10.2 ± 0.3

0.86

0.76 ± 0.1

2.54 ± 0.5

+ 0.2

– 0.1

1.2 ± 0.2

4.44 ± 0.2

1.3 ± 0.15

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

8.6 ± 0.3

10.0

11.3 ± 0.5

+ 0.3

– 0.5

(1.4)

1.27 ± 0.2

As of January, 2001

Unit: mm

2SK2958(L),2SK2958(S)

9

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(1)

—

1.3 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.15

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

3.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK2958(L),2SK2958(S)

10

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(2)

—

1.35 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.2

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

5.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SK2958(L),2SK2958(S)

11

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