Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 1 of 5 August 2009
AG303-63
InGaP HBT Gain Block
Product Features
• DC – 6000 MHz
• 20.5 dB Gain @ 900 MHz
• +14 dBm P1dB @ 900 MHz
• +26 dBm OIP3 @ 900 MHz
• Single Voltage Supply
• Internally matched to 50
• Robust 1000V ESD, Class 1C
• Lead-free/green/RoHS-compliant
SOT-363 package
Applications
• Mobile Infrastructure
• CATV / FTTX
• WLAN / ISM
• RFID
• WiMAX / WiBro
Product Description
The AG303-63 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG303-63 typically provides
20.5 dB gain, +26 dBm OIP3, and +14 dBm P1dB. The
device combines dependable performance with consistent
quality to maintain MTTF values exceeding 1000 years at
mounting temperatures of +85 C and is housed in a lead
free/green/RoHS-compliant SOT-363 industry standard
SMT package.
The AG303-63 consists of a Darlington-pair amplifier
using the high reliability InGaP/GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG303-63 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and WiMAX.
Functional Diagram
RF IN
GND
RF OUT
GND
GND
GND
1
2
3
4
6
5
Function
Pin No.
Input
3
Output/Bias
6
Ground
1, 2, 4, 5
Specifications (1)
Parameter
Units
Min
Typ
Max
Operational Bandwidth
MHz
DC
6000
Operational Temperature
oC
-40
25
+85
Test Frequency
MHz
900
Gain
dB
20.5
Input Return Loss
dB
21
Output Return Loss
dB
24
Output P1dB
dBm
+14
Output IP3 (2)
dBm
+25.8
Output IP2
dBm
+34
Noise Figure
dB
3.2
Test Frequency
MHz
1900
Gain
dB
17.3
18.3
19.3
Output P1dB
dBm
+12.6
Output IP3 (2)
dBm
+25.3
Device Voltage
V
4.23
Device Current
mA
35
1. Test conditions:. T = 25 ºC, Supply Voltage = +5 V, Rbias = 22.1 , 50 System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-55 to +125 C
DC Voltage
+4.5 V
RF Input Power (continuous)
+10 dBm
Thermal Resistance, Rth
For 106 hours MTTF
350C/W
Junction Temperature
+177C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameter
Units
Typical
Frequency
MHz
500
900
1900
2140
S21
dB
21.1
20.5
18.3
17.7
S11
dB
-20
-21
-20
-20
S22
dB
-25
-24
-19
-18
Output P1dB
dBm
+14.0
+14.0
+12.6
+12.2
Output IP3
dBm
+26.1
+25.8
+25.3
+24.9
Noise Figure
dB
3.1
3.2
3.4
3.4
Ordering Information
Part No.
Description
AG303-63G
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-363 Package)
AG303-63PCB
700 – 2400 MHz Fully Assembled Eval. Board
Standard tape / reel size = 3000 pieces on a 7” reel
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 2 of 5 August 2009
AG303-63
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 22.1 , Icc = 35 mA
Frequency
MHz
100
500
900
1900
2140
2400
3500
5800
S21
dB
21.4
21.1
20.5
18.3
17.7
17.1
15.1
11.4
S11
dB
-23
-20
-21
-20
-20
-20
-21
-20
S22
dB
-20
-25
-24
-19
-18
17
-16
-11
Output P1dB
dBm
+14.0
+14.0
+14.0
+12.6
+12.2
+12.1
+9.8
Output IP3
dBm
+26.3
+26.1
+25.8
+25.3
+24.9
+24.2
Noise Figure
DB
3.1
3.1
3.2
3.4
3.4
3.5
1. Test conditions: T = 25 ºC, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1 , Icc = 35 mA typical, 50 System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
12
14
16
18
20
22
0 1 2 3 4
Frequency (GHz)
Gain (dB)
-40 C +25 C +85 C
Return Loss
-40
-30
-20
-10
0
0 1 2 3 4 5 6
Frequency (GHz)
S11, S22 (dB)
S11 S22
I-V Curve
0
10
20
30
40
50
60
3.0 3.5 4.0 4.5
Device Voltage (V)
Device Current (mA)
Optimal operating point
Output IP3 vs. Frequency
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
OIP3 (dBm)
-40 C +25 C +85 C
Output IP2 vs. Frequency
20
25
30
35
40
0200 400 600 800 1000
Frequency (MHz)
OIP2 (dBm)
-40C +25C +85C
Noise Figure vs. Frequency
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
NF (dB)
-40 C +25 C +85 C
P1dB vs. Frequency
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
P1dB (dBm)
-40 C +25 C +85 C
Output Power / Gain vs. Input Power
frequency = 900 MHz
10
12
14
16
18
20
-20 -16 -12 -8 -4 0 4
Input Power (dBm)
Gain (dB)
0
4
8
12
16
20
Output Power (dBm)
Output Power
Gain
Output Power / Gain vs. Input Power
frequency = 2000 MHz
8
10
12
14
16
18
-20 -16 -12 -8 -4 0 4
Input Power (dBm)
Gain (dB)
-4
0
4
8
12
16
Output Power (dBm)
Output Power
Gain
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 3 of 5 August 2009
AG303-63
InGaP HBT Gain Block
Typical Device RF Performance (cont’d)
Supply Bias = +6 V, Rbias = 51 , Icc = 35 mA
Gain vs. Frequency
12
14
16
18
20
22
0 1 2 3 4
Frequency (GHz)
Gain (dB)
-40 C +25 C +85 C
Output IP3 vs. Frequency
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
OIP3 (dBm)
-40 C +25 C +85 C
Output IP2 vs. Frequency
20
25
30
35
40
0200 400 600 800 1000
Frequency (MHz)
OIP2 (dBm)
-40c +25c +85c
P1dB vs. Frequency
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
P1dB (dBm)
-40 C +25 C +85 C
Noise Figure vs. Frequency
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
NF (dB)
-40 C +25 C +85 C
Typical Device RF Performance
Supply Bias = +8 V, Rbias = 108 , Icc = 35 mA
Gain vs. Frequency
12
14
16
18
20
22
0 1 2 3 4
Frequency (GHz)
Gain (dB)
-40 C +25 C +85 C
Output IP3 vs. Frequency
10
15
20
25
30
00.5 11.5 22.5 3
Frequency (GHz)
OIP3 (dBm)
-40 C +25 C +85 C
Output IP2 vs. Frequency
20
25
30
35
40
0200 400 600 800 1000
Frequency (MHz)
OIP2 (dBm)
-40c +25c +85c
P1dB vs. Frequency
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
P1dB (dBm)
-40 C +25 C +85 C
Noise Figure vs. Frequency
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
NF (dB)
-40 C +25 C +85 C
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 4 of 5 August 2009
AG303-63
InGaP HBT Gain Block
Application Circuit
Recommended Component Values
Reference
Frequency (MHz)
Designator
50
500
900
1900
2200
2500
3500
L1
820 nH
220 nH
68 nH
27 nH
22 nH
18 nH
15 nH
C1, C2, C4
.018 µF
1000 pF
100 pF
68 pF
68 pF
56 pF
39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Ref. Desig.
Value / Type
Size
L1
39 nH wirewound inductor
0603
C1, C2
56 pF chip capacitor
0603
C3
0.018 F chip capacitor
0603
C4
Do Not Place
R1
22.1 1% tolerance
0805
Recommended Bias Resistor Values
Supply
Voltage
R1 value Size
5 V 22.1 ohms 0603
6 V 51 ohms 0805
7 V 80 ohms 1206
8 V 108 ohms 1210
9 V 137 ohms 1210
10 V 166 ohms 1210
12 V 223 ohms 2010
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +5 V. A
1% tolerance resistor is recommended.
Typical Device Data
S-Parameters (Vdevice = +4.23 V, ICC = 35 mA, T = 25 C, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-22.98
179.98
21.98
177.39
-24.44
3.54
-20.65
-5.68
250
-22.69
159.13
21.87
167.91
-25.02
4.82
-20.97
-15.75
500
-20.16
143.45
21.63
156.07
-24.85
3.57
-25.40
-43.37
750
-20.26
125.22
21.26
144.84
-24.83
4.51
-25.00
-70.94
1000
-20.94
105.07
20.77
134.31
-24.96
3.28
-23.86
-91.79
1250
-20.59
89.33
20.29
124.27
-24.48
7.57
-22.22
-112.20
1500
-20.65
73.36
19.71
115.11
-24.24
5.92
-20.71
-125.75
1750
-20.44
58.55
19.14
106.54
-23.97
6.93
-19.65
-135.37
2000
-19.79
46.75
18.54
98.41
-23.30
9.91
-18.55
-142.40
2250
-16.65
30.04
17.95
91.26
-23.27
8.63
-16.11
-127.79
2500
-17.12
24.85
17.54
85.95
-23.55
5.06
-16.52
-139.55
2750
-17.94
23.45
17.04
78.85
-22.50
5.49
-16.78
-152.45
3000
-19.00
24.66
16.52
71.97
-22.27
7.44
-17.04
-171.24
3250
-20.08
31.09
16.06
65.74
-21.97
7.62
-16.83
169.31
3500
-21.05
44.35
15.56
59.22
-21.88
5.59
-16.19
149.95
3750
-20.77
62.21
15.09
52.71
-21.42
3.70
-14.57
132.43
4000
-19.88
76.48
14.56
46.28
-21.00
1.61
-12.93
122.50
4250
-18.40
88.30
14.12
40.49
-20.52
-0.58
-11.61
114.50
4500
-17.26
96.65
13.65
34.69
-20.29
-4.52
-10.81
107.97
4750
-16.54
101.15
13.23
28.72
-20.01
-4.49
-10.22
105.55
5000
-16.75
103.13
12.85
23.29
-20.11
-4.65
-9.92
105.40
5250
-17.21
108.11
12.49
18.36
-19.52
-7.40
-10.06
102.86
5500
-18.69
112.12
12.14
13.87
-19.18
-10.39
-10.32
103.16
5750
-20.02
123.21
11.90
8.93
-19.00
-12.21
-10.98
105.01
6000
-22.38
131.64
11.68
4.17
-18.60
-14.81
-11.52
103.93
Device S-parameters are available for download from the website at: http://www.TriQuint.com
C1
Blocking
Capacitor
RF OUT
L1
RF Choke
C3
0.018 µF
R1
Bias
Resistor
RF IN
C4
Bypass
Capacitor
C2
Blocking
Capacitor
Vcc
Icc = 35 mA
AG303-63
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 5 of 5 August 2009
AG303-63
InGaP HBT Gain Block
Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded
(maximum 245 C reflow temperature) soldering processes. The plating material on the leads is annealed matte tin over copper.
Outline Drawing
JXX
Land Pattern
Product Marking
The component will be marked with a “J”
designator followed by a two-digit numeric lot
code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating: Class 1C
Value: Passes 1000V min.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes 1000V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated thru
diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
