MITSUBISHI SEMICONDUCTOR <GaAs HBT> BA01202 GaAs HBT HYBRID IC Preliminary Specifications are subject to change without notice. DESCRIPTION The BA01202 is GaAs RF amplifier designed for N-CDMA PCS hand-held phone. FEATURES Low voltage Vc=3.2V High power Po=28dBm High gain Gp=25dB @Po=28dBm 2stage amplifier Internal input and output matching APPLICATION N-CDMA (Spreading chip rate is 1.2288Mcps, modulation OUTLINE DRAWING | Unit : millimeters j . mr > a a3 al a 6.0 | _ wr Ze @vVcl @ VC2 4 @ Pin Pout pe @ Vref @ GND is OQPSK) hand set. : |_| Om Om ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol Parameter Condition Ratings* Unit Vec Supply voltage of HPA 6 V Pin Input power ZG=ZL=50Q 5 dBm Tc(op) Operating case temp. -30 ~ +95 C Tstg Storage temp. -30 ~ +125 C *Note : Each maximum rating is guaranteed independently . ELECTRICAL CHARACTERISTICS(Ta=25C) Symbol Parameter Test conditions** Limits Unit MIN | TYP | MAX f Frequency 1850 1910 | MHz Iq Quiescent current No RF input = 60 mA Ict Total current Po=28dBm -- 520 - mA PAE Power added efficiency Vce1=Vc2=3.2V -- 38 -- % Gain Gain Vref=3.0V -- 25 - dB pin Return loss ZS=ZL=50Q -6 dB ACPR | Adjacent channel power at 1.25MHz -33 -29 | dBc dBc 2sp 2nd harmonics -30 | dBc 3sp 3rd harmonics -30 | dBc Rxnoise Noise in RX band -140 | -138 |dBm/Hz Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iji)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORP. page 1 of 1 February, 01