Document Number: 93553 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 14-May-08 1
Standard Recovery Diodes
(Hockey PUK Version), 1200 A
SD800C..L Series
Vishay High Power Products
FEATURES
• Wide current range
• High voltage ratings up to 4500 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style DO-200AB (B-PUK)
• Lead (Pb)-free
TYPICAL APPLICATIONS
• Converters
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IF(AV) 1200 A
DO-200AB (B-PUK)
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS SD800C..L UNITS
24 TO 36 40 TO 45
IF(AV)
1180 1065 A
Ths 55 55 °C
IF(RMS)
2280 2040 A
Ths 25 25 °C
IFSM
50 Hz 13 600 12 200 A
60 Hz 14 240 12 800
I2t50 Hz 925 745 kA2s
60 Hz 845 680
VRRM Range 2400 to 3600 4000 to 4500 V
TJ- 40 to 150 - 40 to 150 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
SD800C..L
24 2400 2500
50
30 3000 3100
36 3600 3700
40 4000 4100
45 4500 4600
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2Revision: 14-May-08
SD800C..L Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version),
1200 A
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS SD800C..L UNITS
24 TO 36 40 TO 45
Maximum average forward current
at heatsink temperature IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
1180 (550) 1065 (490) A
55 (85) 55 (85) °C
Maximum RMS forward current IF(RMS) 25 °C heatsink temperature double side cooled 2280 2040
A
Maximum peak, one-cycle forward,
non-repetitive surge current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
13 600 12 200
t = 8.3 ms 14 240 12 800
t = 10 ms 50 % VRRM
reapplied
11 440 10 250
t = 8.3 ms 11 980 10 750
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
925 745
kA2s
t = 8.3 ms 845 680
t = 10 ms 50 % VRRM
reapplied
654 526
t = 8.3 ms 597 480
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 9250 7450 kA2√s
Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.90 1.06 V
High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.10 1.18
Low level value of forward
slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.38 0.44
mΩ
High level value of forward
slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.34 0.41
Maximum forward voltage drop VFM
Ipk = 2000 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave 1.66 1.95 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range TJ- 40 to 150 °C
Maximum storage temperature range TStg - 55 to 200
Maximum thermal resistance,
junction to heatsink RthJ-hs
DC operation single side cooled 0.073 K/W
DC operation double side cooled 0.031
Mounting force, ± 10 % 14 700 (1500) N (kg)
Approximate weight 255 g
Case style See dimensions - link at the end of datasheet DO-200AB (B-PUK)
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.009 0.009 0.006 0.006
TJ = TJ maximum K/W
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015
60° 0.020 0.020 0.021 0.021
30° 0.036 0.036 0.036 0.036
Document Number: 93553 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 14-May-08 3
SD800C..L Series
Standard Recovery Diodes
(Hockey PUK Version),
1200 A
Vishay High Power Products
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
30
40
50
60
70
80
90
100
110
120
130
140
150
0 100 200 300 400 500 6 00 700 800 900
30° 60° 90°
120°
180°
Avera ge Forward Curren t (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD800C..L Series (2400V to 3600V)
(Single Side Cooled)
R (DC) = 0.073 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 200 400 600 800 1000 1200 1400
30° 60°
90°
180° DC
120°
Average Forward Current (A)
Maxim um Allowable Heatsink Tem perature (°C)
Conduction Period
SD 800C ..L Series (2400V to 3600V)
( S in g le Si d e C o o le d )
R (D C ) = 0 .0 7 3 K/ W
th J- hs
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 400 800 1200 1600
30° 60° 90° 120° 180°
Avera ge Forwa rd Cur ren t (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD800C..L Series (2400V to 3600V )
(Double Side Cooled)
R (D C) = 0.031 K/W
th J-hs
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 400 800 1200 1600
30° 60° 90° 120° 180°
Avera ge Forwa rd Cur ren t (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD800C..L Series (2400V to 3600V )
(Double Side Cooled)
R (D C) = 0.031 K/W
th J-hs
30
40
50
60
70
80
90
100
110
120
130
140
150
0 100 200 300 400 500 600 700 800
30° 60° 90° 120°
180°
Averag e Forward Current (A)
Maximum Allowable Heatsink Temperature ( °C)
Conduction Angle
(Single Side C ooled )
R (D C ) = 0.073 K/ W
thJ-h s
SD800C..L Series (4000V to 4500V )
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 2 00 400 6 00 800 1 000 1 200
30°
60°
90°
180° DC
120°
Average Forward Current (A)
M axim um Allow able Heatsin k Tem perature (°C )
Conduction Period
( S in g le Si d e C o o le d )
R (D C ) = 0.073 K/W
thJ-h s
SD 800C ..L Serie s (4000V to 4500V )
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4Revision: 14-May-08
SD800C..L Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version),
1200 A
Fig. 7 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
Fig. 9 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
Fig. 11 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 200 400 600 800 1000 1200 1400
30° 60° 90° 120° 180°
Averag e Forw ard Cur ren t (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
(Double Side Cooled)
R (D C ) = 0 .03 1 K /W
thJ-h s
SD800C..L Series (4000V to 4500V )
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 400 80 0 120 0 160 0 200 0 240 0
30°
60°
90°
180°
DC
120°
Average Forw ard Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
(Double Side C ooled )
R ( D C) = 0.0 31 K/W
thJ-hs
SD 800C ..L Se ries (4000V to 4500V )
0
500
1000
1500
2000
2500
3000
3500
0 200 400 600 800 1000 1200 1400 1600
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
M aximum Average Forward Power Loss (W)
Average Forward Current (A)
SD800C..L Series
(2400V to 3600V)
T = 150°C
J
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 500 1000 1500 2000 2500
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average Forw ard Power Loss (W)
Average Forward Current (A)
SD800C..L Series
(2400V to 3600 V)
T = 150°C
J
0
500
1000
1500
2000
2500
3000
3500
0 200 400 6 00 800 1000 1200 14 00
180°
120°
90°
60°
30° RMS Limit
Conduction Angle
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD800C..L Series
(4000V to 4500V)
T = 150°C
J
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 400 800 1200160020002400
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD800C..L Ser ies
(4000V to 4500V )
T = 150°C
J
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Revision: 14-May-08 5
SD800C..L Series
Standard Recovery Diodes
(Hockey PUK Version),
1200 A
Vishay High Power Products
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 17 - Forward Voltage Drop Characteristics
Fig. 18 - Forward Voltage Drop Characteristics
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
001011
Number Of Equal Am plitude Half Cycle Current Pulses (N)
Peak Half Sine W ave Forw ard Current (A)
In it ia l T = 1 5 0° C
@ 60 Hz 0.00 83 s
@ 50 Hz 0.01 00 s
J
SD 8 00C ..L Se rie s
(2400V to 3600V )
At An y Rated Load C ondition An d W ith
50% Rated V Applied Following Surge
RRM
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
11.010.0
Pulse Train Duration (s)
Peak Half Sine Wave Forward Curren t (A)
Maximum Non Repetitive Surge Current
SD800C..L Series
(2400V to 3600V)
50% Rated V Reapplied
No Voltage Reapplied
In it ia l T = 15 0 °C
RRM
J
Versus Pulse Train Duration.
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
001011
Number Of Equal Am plitude Half Cycle Current P uls es (N)
Peak Half Sine Wave Forward Current (A)
Initial T = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
50% Ra t e d V A p pl ie d Fo llo w in g S urg e
RRM
SD800C..L Series
(4000V to 4500V )
2000
4000
6000
8000
10000
12000
14000
0.01 0.1 1
Pulse Train Duration (s)
Pe ak H a lf Sine W a ve F orw a rd C urrent (A)
M a xim um No n Rep e titiv e Su rg e C urre nt
Ve rsus Pu lse T ra in D ura tio n .
Initial T = 15 0 °C
N o V o lt a g e R e a p p l ie d
50 % Rate d V Re applied
RRM
J
SD 8 00C ..L Se rie s
(4000V to 4500V )
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25°C
J
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T = 150°C
J
SD800C..L Series
(2400V to 3600V)
100
100 0
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
T = 25° C
J
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T = 150°C
J
SD 8 00C ..L Se rie s
(4000V to 4500V )
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6Revision: 14-May-08
SD800C..L Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version),
1200 A
Fig. 19 - Thermal Impedance ZthJ-hs Characteristics
ORDERING INFORMATION TABLE
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Sq u are W ave P ulse D ura tion (s)
thJ-hs
T ra nsie nt The rm a l Im pedanc e Z (K/W )
Stea d y State Va lue
R = 0.073 K/W
(Single Side C oo led)
R = 0.031 K/W
(Double Side C ooled)
(D C Operation)
thJ-hs
thJ-hs
SD 800C ..L Series
1- Diode
2- Essential part number
3- 0 = Standard recovery
4- C = Ceramic PUK
5- Voltage code x 100 = VRRM (see Voltage Ratings table)
6-
L = PUK case DO-200AB (B-PUK)
Device code
51324
6
SD 80 0 C 45 L
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95246
Document Number: 95246 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 05-Nov-07 1
DO-200AB (B-PUK)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
58.5 (2.30) DIA. MAX.
53 (2.09) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03)
both ends
34 (1.34) DIA. MAX.
2 places
26.9 (1.06)
25.4 (1)
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Revision: 12-Mar-12 1Document Number: 91000
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