ON Semiconductor BUH150 SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state-of-art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current during either the start-up conditions or under a short circuit across the load. This High voltage/High speed product exhibits the following main features: * Improved Efficiency Due to the Low Base Drive Requirements: * * High and Flat DC Current Gain hFE Fast Switching Robustness Thanks to the Technology Developed to Manufacture this Device ON Semiconductor Six Sigma Philosophy Provides Tight and Reproducible Parametric Distributions IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIII III IIIII III IIIIIIIIIIIIIII III IIIII III MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Sustaining Voltage VCEO 400 Vdc Collector-Base Breakdown Voltage VCBO 700 Vdc Collector-Emitter Breakdown Voltage VCES 700 Vdc Emitter-Base Voltage VEBO 10 Vdc Collector Current -- Continuous -- Peak (1) IC ICM 15 25 Adc Base Current -- Continuous Base Current -- Peak (1) IB IBM 6 12 Adc *Total Device Dissipation @ TC = 25C *Derate above 25C PD 150 1.2 Watt W/C TJ, Tstg -65 to 150 C RJC RJA 0.85 62.5 TL 260 Operating and Storage Temperature 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from case for 5 seconds C/W C (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 3 1 Publication Order Number: BUH150/D BUH150 IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 400 460 Vdc Collector-Base Breakdown Voltage (ICBO = 1 mA) VCBO 700 860 Vdc Emitter-Base Breakdown Voltage (IEBO = 1 mA) VEBO 10 12.3 Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO 100 Adc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25C @ TC = 125C ICES 100 1000 Adc Collector Base Current (VCB = Rated VCBO, VEB = 0) @ TC = 25C @ TC = 125C ICBO 100 1000 Adc IEBO 100 Adc Emitter-Cutoff Current (VEB = 9 Vdc, IC = 0) ON CHARACTERISTICS Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) Collector-Emitter Saturation Voltage (IC = 2 Adc, IB = 0.4 Adc) @ TC = 25C @ TC = 125C VBE(sat) 1 1.25 Vdc VCE(sat) 0.16 0.15 0.4 0.4 Vdc (IC = 10 Adc, IB = 2 Adc) @ TC = 25C 0.45 1 Vdc (IC = 20 Adc, IB = 4 Adc) @ TC = 25C 2 5 Vdc DC Current Gain (IC = 20 Adc, VCE = 5 Vdc) @ TC = 25C @ TC = 125C DC Current Gain (IC = 10 Adc, VCE = 5 Vdc) hFE 4 2.5 7 4.5 @ TC = 25C @ TC = 125C 8 6 12 10 -- DC Current Gain (IC = 2 Adc, VCE = 1 Vdc) @ TC = 25C @ TC = 125C 12 14 20 22 -- DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) @ TC = 25C 10 20 -- 1.5 V -- DYNAMIC SATURATION VOLTAGE VCE(dsat) ( ) IC = 5 Adc, IB1 = 1 Adc VCC = 300 V @ TC = 25C @ TC = 125C 2.8 V IC = 10 Adc, IB1 = 2 Adc VCC = 300 V @ TC = 25C 2.4 V @ TC = 125C 5 V fT 23 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Cob 100 150 pF Input Capacitance (VEB = 8 Vdc, f = 1 MHz) Cib 1300 1750 pF Dynamic Saturation V lt Voltage: Determined 3 s after rising IB1 reaches 90% of final IB1 (see Figure 19) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz) http://onsemi.com 2 BUH150 IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIII IIII IIII IIII III IIIIIIII 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IIIIIIII IIIII IIII IIII IIII IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 s) Turn-on Time Storage Time Fall Time IC = 2 Adc, IB1 = 0.2 Adc IB2 = 0.2 0 2 Adc VCC = 300 Vdc @ TC = 25C ton 200 300 ns @ TC = 25C ts 5.3 6.5 s @ TC = 25C tf 240 350 ns Turn-off Time @ TC = 25C toff 5.6 7 s Turn-on Time @ TC = 25C ton 100 200 ns @ TC = 25C ts 6.1 7.5 s @ TC = 25C tf 320 500 ns @ TC = 25C toff 6.5 8 s @ TC = 25C @ TC = 125C ton 450 800 650 ns @ TC = 25C @ TC = 125C toff 2.5 3.9 3 s @ TC = 25C @ TC = 125C ton 500 900 700 ns @ TC = 25C @ TC = 125C toff 2.25 2.75 2.75 s Storage Time Fall Time IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 0 4 Adc VCC = 300 Vdc Turn-off Time Turn-on Time Turn-off Time IC = 5 Adc, IB1 = 0.5 Adc IB2 = 0.5 0 5 Adc VCC = 300 Vdc Turn-on Time Turn-off Time IC = 10 Adc, IB1 = 2 Adc IB2 = 2 Adc VCC = 300 Vdc SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) Fall Time @ TC = 25C @ TC = 125C tfi 110 160 250 ns @ TC = 25C @ TC = 125C tsi 6.5 8 8 s Crossover Time @ TC = 25C @ TC = 125C tc 235 240 350 ns Fall Time @ TC = 25C @ TC = 125C tfi 110 170 250 ns @ TC = 25C @ TC = 125C tsi 6 7.8 7.5 s Crossover Time @ TC = 25C @ TC = 125C tc 250 270 350 ns Fall Time @ TC = 25C @ TC = 125C tfi 110 140 150 ns @ TC = 25C @ TC = 125C tsi 3.25 4.6 3.75 s Crossover Time @ TC = 25C @ TC = 125C tc 275 450 350 ns Fall Time @ TC = 25C @ TC = 125C tfi 110 160 175 ns @ TC = 25C @ TC = 125C tsi 2.3 2.8 2.75 s @ TC = 25C @ TC = 125C tc 250 475 350 ns Storage Time Storage Time Storage Time Storage Time Crossover Time IC = 2 Adc IB1 = 0.2 Adc IB2 = 0.2 Adc IC = 2 Adc IB1 = 0.4 Adc IB2 = 0.4 Adc IC = 5 Adc IB1 = 0.5 Adc IB2 = 0.5 Adc IC = 10 Adc IB1 = 2 Adc IB2 = 2 Adc http://onsemi.com 3 BUH150 TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 3 V TJ = 125C TJ = -20C 10 1 0.001 0.01 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 1 V TJ = 25C 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) TJ = 125C TJ = -20C 10 1 0.001 100 Figure 1. DC Current Gain @ 1 Volt 100 10 IC/IB = 5 VCE = 5 V TJ = 125C TJ = -20C 10 1 0.01 VCE , VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) Figure 2. DC Current Gain @ 3 Volt 100 TJ = 25C 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) TJ = 25C TJ = -20C 0.1 0.01 0.001 100 TJ = 125C 1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 4. Collector-Emitter Saturation Voltage Figure 3. DC Current Gain @ 5 Volt 10 1.5 IC/IB = 5 VBE , VOLTAGE (VOLTS) IC/IB = 10 VCE , VOLTAGE (VOLTS) TJ = 25C 1 TJ = 125C 0.1 1 TJ = -20C 0.5 TJ = 125C TJ = 25C 0.01 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 0 0.001 100 TJ = 25C Figure 5. Collector-Emitter Saturation Voltage 0.01 1 10 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 6. Base-Emitter Saturation Region http://onsemi.com 4 100 BUH150 TYPICAL STATIC CHARACTERISTICS 1.5 2 TJ = 25C VCE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) IC/IB = 10 1 TJ = -20C TJ = 25C 0.5 TJ = 125C 1.5 1 20 A 15 A VCE(sat) (IC = 1 A) 0.5 5A 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) 0 0.01 100 Figure 7. Base-Emitter Saturation Region 1 IB, BASE CURRENT (A) 100 10 Figure 8. Collector Saturation Region 10000 900 Cib (pF) TJ = 25C f(test) = 1 MHz 1000 Cob (pF) 100 BVCER @ 10 mA 800 BVCER (VOLTS) C, CAPACITANCE (pF) 0.1 8A 10 A TJ = 25C 700 BVCER(sus) @ 200 mA 600 500 10 1 10 VR, REVERSE VOLTAGE (VOLTS) 400 100 10 Figure 9. Capacitance 100 RBE () Figure 10. Resistive Breakdown http://onsemi.com 5 1000 BUH150 TYPICAL SWITCHING CHARACTERISTICS 12 2000 1800 IB1 = IB2 VCC = 300 V PW = 40 s 1600 10 25C 8 125C 1200 1000 t, TIME (s) t, TIME (ns) 1400 IC/IB = 10 125C 800 400 25C 200 IC/IB = 5 6 0 3 9 12 6 IC, COLLECTOR CURRENT (AMPS) IC/IB = 10 2 IC/IB = 5 0 15 8 6 5 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H IC/IB = 10 7 6 t, TIME (s) IC/IB = 5 7 t, TIME (s) 15 Figure 12. Resistive Switch Time, toff 8 4 5 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H 4 3 3 2 2 TJ = 125C TJ = 25C 1 1 3 TJ = 125C TJ = 25C 1 5 9 11 7 IC, COLLECTOR CURRENT (AMPS) 13 0 15 1 Figure 13. Inductive Storage Time, tsi IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H 450 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H 700 600 tc 250 10 800 TJ = 125C TJ = 25C 350 4 7 IC, COLLECTOR CURRENT (AMPS) Figure 13 Bis. Inductive Storage Time, tsi t, TIME (ns) 550 t, TIME (ns) 5 10 IC, COLLECTOR CURRENT (AMPS) 0 Figure 11. Resistive Switching, ton 0 IB1 = IB2 VCC = 300 V PW = 20 s 4 600 0 TJ = 25C TJ = 125C tfi 500 TC = 125C TC = 25C tc 400 300 tfi 200 150 100 50 1 3 7 5 9 11 IC, COLLECTOR CURRENT (AMPS) 13 0 15 0 Figure 14. Inductive Storage Time, tc & tfi @ IC/IB = 5 2 4 8 6 IC, COLLECTOR CURRENT (AMPS) Figure 15. Inductive Storage Time, tc & tfi @ IC/IB = 10 http://onsemi.com 6 10 BUH150 TYPICAL SWITCHING CHARACTERISTICS 5 200 IC = 5 A t fi , FALL TIME (ns) 150 3 2 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H 1 0 2 100 IC = 5 A 50 IC = 10 A 4 TJ = 125C TJ = 25C 6 hFE, FORCED GAIN 8 0 10 IC = 10 A 3 5 4 6 7 hFE, FORCED GAIN 800 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H 700 600 TJ = 125C TJ = 25C IC = 10 A 500 400 IC = 5 A 300 200 100 3 4 IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 H 8 Figure 17. Inductive Fall Time Figure 16. Inductive Storage Time t c , CROSSOVER TIME (ns) tsi , STORAGE TIME (s) 4 TJ = 125C TJ = 25C 5 6 7 hFE, FORCED GAIN 8 9 Figure 18. Inductive Crossover Time http://onsemi.com 7 10 9 10 BUH150 TYPICAL SWITCHING CHARACTERISTICS 10 VCE IC 9 90% IC 8 dyn 1 s 7 dyn 3 s tfi tsi 6 Vclamp 5 0V 10% Vclamp 4 90% IB 3 1 s 2 IB IB 90% IB1 1 2 10% IC tc 1 3 s 0 0 3 TIME Figure 19. Dynamic Saturation Voltage Measurements 4 TIME 5 6 7 8 Figure 20. Inductive Switching Measurements Table 1. Inductive Load Switching Drive Circuit +15 V 1 F 150 3W 100 3W VCE PEAK MTP8P10 MPF930 MUR105 MPF930 +10 V IC PEAK 100 F MTP8P10 VCE RB1 IB1 IB Iout A 50 MJE210 COMMON 500 F 150 3W IB2 RB2 MTP12N10 1 F -Voff V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA http://onsemi.com 8 Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 BUH150 TYPICAL THERMAL RESPONSE POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 80 120 100 60 TC, CASE TEMPERATURE (C) 140 160 Figure 21. Forward Bias Power Derating TJ(pk) may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21. 1 s 10 5 ms DC 1 10 s 1 ms 0.1 0.01 1 100 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) 16 EXTENDED SOA IC, COLLECTOR CURRENT (AMPS) 100 GAIN 5 14 12 10 8 6 -5 V 4 0V 2 0 300 1000 Figure 22. Forward Bias Safe Operating Area TC 125C LC = 4 mH -1.5 V 400 500 600 700 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 23. Reverse Bias Safe Operating Area http://onsemi.com 9 800 BUH150 TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 0.1 P(pk) 0.1 0.05 t1 0.02 0.01 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 1 RJC(t) = r(t) RJC RJC = 0.83C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 10 t, TIME (ms) Figure 24. Typical Thermal Response (ZJC(t)) for BUH150 http://onsemi.com 10 100 1000 BUH150 PACKAGE DIMENSIONS STYLE 1: PIN 1. 2. 3. 4. TO-220AB CASE 221A-09 ISSUE AA BASE COLLECTOR EMITTER COLLECTOR -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N http://onsemi.com 11 INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BUH150 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 12 BUH150/D