7/8/2011
SCHEMATIC
Pacific Silicon Sensor APD Hybrid Series Data Sheet
Part Description AD500-9-400M-TO5
US Order # 05-051
International Order # 500490
PIN CIRCLE
ACTIVE AREA: 0.196 mm
(500 µm DIAMETER)
PIN 2
PIN 1
5 PL
Ø 0.46
4.2 ±1
2
PIN 4
PIN 3
Ø5.08
V
BACKSIDE VIEW
113°
VIEWING
ANGLE
Ø6.60
Ø8.3
2.2
7.6 MIN
CHIP DIMENSIONS
PIN 5
CASE/ GND
5 PL
CC
Vout+
Vout-
+VBIAS
1.00 SQ
Ø9.2
FEATURES DESCRIPTION APPLICATIONS
0.500 mm active area
Low noise
High gain
Long term stability
The AD500-9-400M-TO5 is an Avalanche Photodiode Amplifier
Hybrid containing a 0.196 mm2 active area APD chip integrated
with an internal transimpedance amplifier. Hermetically
packaged in a TO-5 with a borosilicate glass window cap.
Precision photometry
Analytical instruments
Medical equipment
Low light sensor
ABSOLUTE MAXIMUM RATING SPECTRAL RESPONSE at M = 100
SYMBOL PARAMETER MIN MAX UNITS
TSTG Storage Temp -55 +125 C
TOP Operating Temp 0 +60 C
TSOLDERING Soldering Temp - +240 C
P Power Dissipation - 360 mW
Vcc Single Supply Voltage +3.0 +5.5 V
Icc Supply Current - 63 mA
ELECTRO-OPTICAL CHARACTERISTICS @ 22 C (VCC = single supply +3.3V, RL = 100W unless otherwise specified)
SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS
-3dB Frequency Response -3dB @ 905 nm --- 400 --- MHz
S Sensitivity*
= 905 nm; M = 100 --- 100 --- KV/W
Icc Supply Current Dark state --- 34 63 mA
* Sensitivity = APD responsivity (0.45 A/W X 100 gain) x TIA gain (2.5K)
These devices are sensitive to electrostatic discharge. Please use ESD precautions when handling.
Disclaimer: Due to our policy of continued development, specifications are subject to change without notice.
400 500 600 700 800 900 1000 1100
0
10
20
30
40
50
60
70
RESPONSIVITY (A/W)
WAVELENGTH (nm)
PIN 2
C1
C2
+V
PIN 3
BIAS
PIN 1
OUT+
OUT-
PIN 4
CASE/GND
PIN 5
CC (+5V)
V
AD500-9
H
o
R
S
C
O
M
P
L
I
A
N
T
7/8/2011
AVALANCHE PHOTODIODE DATA @ 22 C
SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS
ID Dark Current M = 100 (see note 2) --- 0.5 5.0 nA
C Capacitance M = 100 (see note 2) --- 1.2 --- pF
VBR Breakdown Voltage (see note 1) ID = 2 µA 160 240 --- V
Temperature Coefficient of VBR --- 1.55 --- V/K
Responsivity M = 100; = 0 V; = 905 nm 55 60 --- A/W
3dB Bandwidth -3dB --- 0.5 --- GHz
t
r
Rise Time M = 100 --- 550 --- ps
Optimum Gain 50 60 ---
“Excess Noise” factor M = 100 --- 2.5 ---
“Excess Noise” index M = 100 --- 0.2 ---
Noise Current M = 100 --- 1.0 --- pA/Hz1/2
Max Gain 200 ---
---
NEP Noise Equivalent Power M = 100; = 905 nm --- 2.0 X 10-14 --- W/Hz1/2
Note 1: The following different breakdown voltage ranges are available: (160 – 200 V), (200 – 240 V).
Note 2: Measurement conditions: Setup of photo current 1 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo
current up to 100 nA, (M = 100) by internal multiplication due to an increasing bias voltage.
TRANSIMPEDANCE AMPLIFIER DATA @ 25 C
(Vcc = +3.0 V to 5.5 V, TA = 0°C to 70°C, 100Ω load between OUT+ and OUT-. Typical values are at TA = 25°C, Vcc = +3.3 V)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Supply Voltage 3 5 6 V
Supply Current --- 34 63 mA
Transimpedance Differential, measured with 40 µA p-p signal 2.10 2.75 3.40 K
Output impedance Single ended per side 48 50 52
Maximum Differential Output Voltage Input = 2 mA p-p with 100 differential termination 220 380 575 mV p-p
AC Input Overload 2 --- --- mA p-p
DC Input Overload 1 --- --- mA
Input Referred RMS Noise TO-5 package, see note 4 --- 490 668 nA
Input Referred Noise Density See note 4 --- 11 --- pA/Hz1/2
Small signal bandwidth Source capacitance = 0.85 pF, see note 3 1.525 2.00 --- GHz
Low Frequency Cutoff -3 dB, input < 20 µA DC --- 30 --- KHz
Transimpedance Linear Range Peak to peak 0.95 < linearity < 1.05 40 --- --- µA p-p
Power Supply Rejection Ratio
(PSRR)
Output referred, f < 2 MHz, PSSR = -20 Log (∆Vout /
∆Vcc)
--- 2.0 X 10-14 ---
W/Hz1/2
Note 3: Source capacitance for AD500-9-400M-TO5 is the capacitance of APD.
Note 4: Input referred noise is calculated as RMS output noise/ (gain at f = 10 Mhz). Noise density is (input referred noise)/√bandwidth.
TRANSFER CHARACTERISTICS
The circuit used is an avalanche photodiode directly coupled to a high speed data handling transimpedance amplifier. The output of the APD
(light generated current) is applied to the input of the amplifier. The amplifier output is in the form of a differential voltage pulsed signal.
The APD responsivity curve is provided in Fig. 2. The term Amps/Watt involves the area of the APD and can be expressed as
Amps/mm2/Watts/mm2, where the numerator applies to the current generated divided by the area of the detector, the denominator refers to the
power of the radiant energy present per unit area. As an example assume a radiant input of 1 microwatt at 850 nm. The APD’s corresponding
responsivity is 0.4 A/W.
If energy in = 1 µW, then the current from the APD = (0.4 A/W) x (1 x 10-6W) = 0.4 µA. We can then factor in the typical gain of the APD
of 100, making the input current to the amplifier 40 µA. From Fig. 5 we can see the amplifier output will be approximately 40 mV p-p.
APPLICATION NOTES
The AD500-9-400M-TO5 is a high speed optical data receiver. It incorporates an internal transimpedance amplifier with an avalanche
photodiode.
This detector requires +3.5 V to +5.0 V voltage supply for the amplifier and a high voltage supply (100-240 V) for the APD. The internal APD
follows the gain curve published for the AD500-9-TO52-S1 avalanche photodiode. The transimpedance amplifier provides differential output
signals in the range of 200 millivolts differential.
In order to achieve highest gain, the avalanche photodiode needs a positive bias voltage (Fig. 1). However, a current limiting resistor must be
placed in series with the photodiode bias voltage to limit the current into the transimpedance amplifier. Failure to limit this current may
result in permanent failure of the device. The suggested initial value for this limiting resistor is 390 KOhm.
When using this receiver, good high frequency placement and routing techniques should be followed in order to achieve maximum frequency
response. This includes the use of bypass capacitors, short leads and careful attention to impedance matching. The large gain bandwidth
values of this device also demand that good shielding practices be used to avoid parasitic oscillations and reduce output noise.
7/8/2011
Fig. 1: APD GAIN vs BIAS VOLTAGE Fig. 2: APD SPECTRAL RESPONSE (M = 1)
180 190 200 210 220 230 240 250 260
1
10
100
1000
APPLIED VOLTAGE (V)
GAIN
WAVELENGTH (nm)
A/W
400
0.0 500 600 700 800 900 1000 1100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Fig. 3 : AMPLIFIER OUTPUT vs TEMPERATURE Fig.4 : APD CAPACITANCE vs VOLTAGE
0
200
AMBIENT TEMPERATURE (°C)
AMPLITUDE (mV)
20 40 60 80
220
240
260
280
300
320
340
360
380
400
0 1020304050 60708090100
40
35
30
25
20
15
10
5
0
BREAKDOWN VOLTAGE (Vbr)
JUNCTION CAPACITANCE (pF)
Fig. 5: AMPLIFIER TRANSFER FUNCTION Fig. 6: TOTAL FREQUENCY RESPONSE
0
0
25
50
75
100
125
150
25 100
50 75 125 150 175 200
INPUT CURRENT (µA)
OUTPUT VOLTAGE, (mV p-p)
50
55
60
65
70
1M 10M 100M 400M 1G
FREQUENCY (Hz)
TRANSIMPEDANCE (db)
USA:
Pacific Silicon Sensor, Inc.
5700 Corsa Avenue, #105
Westlake Village, CA 91362 USA
Phone (818) 706-3400
Fax (818) 889-7053
Email: sales@pacific-sensor.com
www.pacific-sensor.com
International sales:
First Sensor AG
Peter-Behrens-Str. 15
12459 Berlin, Germany
Phone +49 (0) 30 / 63 99 23 99
Fax +49 (0) 30 / 63 99 23 752
Email: sales.opto@first-sensor.de
http://www.first-sensor.de
